ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics最新文献

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Templated grain growth of textured Sr/sub 2/Nb/sub 2/O/sub 7/ 织构Sr/sub 2/Nb/sub 2/O/sub 7/的模板晶粒生长
B. Brahmaroutu, G. Messing, S. Trolier-McKinstry, U. Selvaraj
{"title":"Templated grain growth of textured Sr/sub 2/Nb/sub 2/O/sub 7/","authors":"B. Brahmaroutu, G. Messing, S. Trolier-McKinstry, U. Selvaraj","doi":"10.1109/ISAF.1996.598167","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598167","url":null,"abstract":"Sr/sub 2/Nb/sub 2/O/sub 7/, a candidate material for high temperature piezoelectric applications, is difficult to pole as a polycrystalline ceramic. To circumvent this problem, a process based on templated grain growth (TGG) for producing textured samples was developed. To accomplish TGG, fine matrix powder, single crystal template particles, and a fabrication technique for orienting template particles in the matrix are required. Single crystal template particles were synthesized by a molten salt technique. The matrix powder was synthesized by solid state reaction of SrCO/sub 3/ and Nb/sub 2/O/sub 5/ in a 2:1 molar ratio. The template particles were dispersed in the matrix powder and tape cast. The initial orientation was induced by the shear field during tape casting and subsequent lamination. Sintering leads to the growth of oriented template particles in the dense matrix, thereby increasing the degree of grain-orientation. The effect of processing parameters and starting powders on the microstructure and texture is presented.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"95 1","pages":"883-886 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76568250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Low temperature preparation of fatigue free Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by MOCVD and their electrical properties 低温无疲劳Bi/sub 4/Ti/sub 3/O/sub 12/ MOCVD薄膜制备及其电学性能
T. Kijima, M. Nagata, H. Matsunaga
{"title":"Low temperature preparation of fatigue free Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by MOCVD and their electrical properties","authors":"T. Kijima, M. Nagata, H. Matsunaga","doi":"10.1109/ISAF.1996.602759","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602759","url":null,"abstract":"We have investigated the low temperature MOCVD method to form Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with suitable electrical properties for nonvolatile ferroelectric memory applications. An ultra thin double buffer layer (5nm-Bi/sub 4/Ti/sub 3/O/sub 12//5nm-TiO/sub 2/) was used to control the crystallization and a fine grain structure of Bi/sub 4/Ti/sub 3/O/sub 12/ at a low growth temperature was obtained. 100 nm-Bi/sub 4/Ti/sub 3/O/sub 12/ thin films grown at 400/spl deg/C showed an excellent smooth surface morphology and had good electrical properties, namely, remanent polarization, Pr=11 /spl mu/C/cm/sup 2/, coercive field, Ec=90 kV/cm and low leakage current, IL=7/spl times/10/sup -9/ A/cm/sup 2/ at 3 V. Additionally, for the first time, fatigue free property was confirmed up to 1/spl times/10/sup 12/ switching cycles. Furthermore, it was found that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with a bismuth rich composition showed the (117) preferred orientation and a very large Pr of 23 /spl mu/C/cm/sup 2/.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"54 1","pages":"323-328 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86862956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability of ceramic actuators 陶瓷执行器的可靠性
K. Uchino
{"title":"Reliability of ceramic actuators","authors":"K. Uchino","doi":"10.1109/ISAF.1996.598136","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598136","url":null,"abstract":"Reliability of ceramic actuators is dependent on complex factors, which are divided into three major categories: reliability of the ceramic material, reliability of the device design and drive technique. The reliability issues are reviewed from whole points of view, with a particular focus on multilayer structures.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"24 1","pages":"763-766 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88231883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Effect of tungsten additions on the field-induced piezoelectric properties of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ ceramics 添加钨对Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/陶瓷场致压电性能的影响
W. Huebner, W. Xue, P. Lu
{"title":"Effect of tungsten additions on the field-induced piezoelectric properties of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ ceramics","authors":"W. Huebner, W. Xue, P. Lu","doi":"10.1109/ISAF.1996.598121","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598121","url":null,"abstract":"The objective of this research was to characterize the dielectric and induced piezoelectric properties of W/sup 6+/-doped, 0.87 Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-0.13PbTiO/sub 3/ relaxor ferroelectrics. The induced k/sub t/'s depended strongly on the W/sup 6+/ amount and electric field, maximizing at a value of 0.58 for an applied field of 6 kV/cm and a 1% doping level. In addition, only slight variations in the sintering temperature (/spl plusmn/10/spl deg/C) had a pronounced effect on the properties, decreasing the k/sub t/ by as much as 10%.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"703-706 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88298107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High temperature piezoelectricity of sodium substituted lithium niobate ceramics 钠取代铌酸锂陶瓷的高温压电性
L. Pardo, P. Durán-martín, W. Wolny, J. Mercurio, B. Jiménez
{"title":"High temperature piezoelectricity of sodium substituted lithium niobate ceramics","authors":"L. Pardo, P. Durán-martín, W. Wolny, J. Mercurio, B. Jiménez","doi":"10.1109/ISAF.1996.598175","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598175","url":null,"abstract":"Ceramics of Sodium substituted Lithium Niobate (Li/sub 1-x/Na/sub x/NbO/sub 3/) were prepared by mixed oxides and sol-gel methods. The phase diagram of the system was studied by HT XRD, calorimetry and dielectric measurements. An automatic iterative procedure was used for the determination of the piezoelectric, elastic and dielectric coefficients from impedance measurements as a function of the temperature. Piezoelectric activity was found up temperatures above 600/spl deg/C. The effect of Na content on the thermal stability of the piezoelectric properties is discussed.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"53 1","pages":"915-918 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88423846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The study of composite effects of functional ceramics and its potential applications 功能陶瓷复合效应的研究及其应用前景
Y. Wang, R. Roseman, R. Buchanan
{"title":"The study of composite effects of functional ceramics and its potential applications","authors":"Y. Wang, R. Roseman, R. Buchanan","doi":"10.1109/ISAF.1996.598130","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598130","url":null,"abstract":"Functional ceramics have come into a new era with the concept that materials may exhibit combined effects or various functional properties which can be composed together to form a new material, device or system. Several examples which are now being studied and developed are introduced: Ceramic damping and acoustic dumb devices through piezoelectric+electrostrictive; Optical memory devices developed by photovoltaic+ferroelectric; Pyroelectric transformers taking advantage of PTC+pyroelectric; Pyroelectric energy converters obtained by induced phase transitions (F/sub RI//F/sub RH/); Smart actuators by induce phase transition effects. Principles and experimental results are discussed.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"142 1","pages":"739-742 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88992799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The effect of dielectric constant on particle-particle dielectrophoretic attraction in dielectric fluids 介电常数对介电流体中粒子-粒子介电吸引的影响
C. P. Bowen, R. Newnham, C. Randall
{"title":"The effect of dielectric constant on particle-particle dielectrophoretic attraction in dielectric fluids","authors":"C. P. Bowen, R. Newnham, C. Randall","doi":"10.1109/ISAF.1996.598166","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598166","url":null,"abstract":"The aim of this study was to investigate how the particulate phase dielectric constant impacts the dielectrophoretic force in an organic fluid suspension. This was accomplished through the construction of an apparatus which allowed the direct measurement of the dielectrophoretic force of attraction between macroscopic ceramic hemispheres submerged in an uncrosslinked thermoset polyurethane carrier fluid. The analysis of the experimental data show that the dielectrophoretic force increases with particle dielectric constant under AC fields but the same relationship does not hold when applying DC fields. This is believed to occur owing to the relaxation of the conduction mechanism under an alternating electric field.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"50 1","pages":"879-882 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83075173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-assembly of optical patterns in lead magnesium niobate (PMN) 铌酸铅镁(PMN)中光学图案的自组装
J. Scott, R. A. O'sullivan
{"title":"Self-assembly of optical patterns in lead magnesium niobate (PMN)","authors":"J. Scott, R. A. O'sullivan","doi":"10.1109/ISAF.1996.602729","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602729","url":null,"abstract":"Hexagonal far-field patterns are observed in the initially Gaussian laser light transmitted at low powers (<1.0 W in a 50 mm diameter) through single-crystal lead magnesium niobate (PMN). These are absent in fine-grained ceramics of the same material and are interpreted in terms of Firth's photorefractive theory of accidental holography.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"169-172 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83440382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct bonding of piezoelectric materials onto Si 压电材料在硅上的直接键合
K. Eda, Y. Tomita, M. Sugimoto, T. Ogura, A. Nanba, Y. Taguchi, O. Kawasaki
{"title":"Direct bonding of piezoelectric materials onto Si","authors":"K. Eda, Y. Tomita, M. Sugimoto, T. Ogura, A. Nanba, Y. Taguchi, O. Kawasaki","doi":"10.1109/ISAF.1996.598125","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598125","url":null,"abstract":"New composite semiconductor-piezoelectric materials fabricated by direct bonding technology are reported. The fabrication process, analysis of the bonded interface microstructures, and their applications are also reported.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"55 1","pages":"719-722 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88558589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Processing and dielectric property evaluation of barium strontium titanate thin films prepared by a sol-gel technique [DRAM capacitors] 溶胶-凝胶法制备钛酸锶钡薄膜[DRAM电容器]的工艺及介电性能评价
D. Tahan, L. Klein, A. Safari
{"title":"Processing and dielectric property evaluation of barium strontium titanate thin films prepared by a sol-gel technique [DRAM capacitors]","authors":"D. Tahan, L. Klein, A. Safari","doi":"10.1109/ISAF.1996.602794","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602794","url":null,"abstract":"Barium strontium titanate (BST) thin films of the compositions Ba/sub x/Sr/sub 1-x/TiO/sub 3/ with x ranging from 0 to 1 were prepared by a sol-gel spin coating technique. BST solutions were optimized in terms of stability, film crystallization and film quality. Films were deposited on Si (100) and Pt/Ti/SiO/sub 2//Si (100) substrates and the corresponding microstructures were evaluated using techniques such as X-ray diffraction, SEM, FESEM, and TEM. The dielectric breakdown strength was also determined. Grain size was proven to be on the order of 50 nm and had a marked effect on the electrical properties of the films. A dielectric constant ranging from 200 to 625 was obtained for BST thin films with x=0.6 over a thickness range of 100 to 900 nm. The leakage current density of the films remained below 1.1 /spl mu/A/cm/sup 2/ for extended time periods when measured at an applied field of 75 kV/cm.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"73 1","pages":"483-486 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90805805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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