Processing and dielectric property evaluation of barium strontium titanate thin films prepared by a sol-gel technique [DRAM capacitors]

D. Tahan, L. Klein, A. Safari
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引用次数: 2

Abstract

Barium strontium titanate (BST) thin films of the compositions Ba/sub x/Sr/sub 1-x/TiO/sub 3/ with x ranging from 0 to 1 were prepared by a sol-gel spin coating technique. BST solutions were optimized in terms of stability, film crystallization and film quality. Films were deposited on Si (100) and Pt/Ti/SiO/sub 2//Si (100) substrates and the corresponding microstructures were evaluated using techniques such as X-ray diffraction, SEM, FESEM, and TEM. The dielectric breakdown strength was also determined. Grain size was proven to be on the order of 50 nm and had a marked effect on the electrical properties of the films. A dielectric constant ranging from 200 to 625 was obtained for BST thin films with x=0.6 over a thickness range of 100 to 900 nm. The leakage current density of the films remained below 1.1 /spl mu/A/cm/sup 2/ for extended time periods when measured at an applied field of 75 kV/cm.
溶胶-凝胶法制备钛酸锶钡薄膜[DRAM电容器]的工艺及介电性能评价
采用溶胶-凝胶自旋镀膜技术制备了Ba/sub x/Sr/sub 1-x/TiO/sub 3/, x范围为0 ~ 1的钛酸锶钡(BST)薄膜。从稳定性、成膜结晶和成膜质量三个方面对BST溶液进行了优化。在Si(100)和Pt/Ti/SiO/ sub2 //Si(100)衬底上沉积薄膜,并利用x射线衍射、SEM、FESEM和TEM等技术对相应的微观结构进行了表征。测定了介质击穿强度。晶粒尺寸约为50 nm,对薄膜的电性能有显著影响。在100 ~ 900 nm厚度范围内,x=0.6的BST薄膜的介电常数在200 ~ 625之间。当施加75 kV/cm的电场时,薄膜的漏电流密度在较长时间内保持在1.1 /spl mu/A/cm/sup 2/以下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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