{"title":"低温无疲劳Bi/sub 4/Ti/sub 3/O/sub 12/ MOCVD薄膜制备及其电学性能","authors":"T. Kijima, M. Nagata, H. Matsunaga","doi":"10.1109/ISAF.1996.602759","DOIUrl":null,"url":null,"abstract":"We have investigated the low temperature MOCVD method to form Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with suitable electrical properties for nonvolatile ferroelectric memory applications. An ultra thin double buffer layer (5nm-Bi/sub 4/Ti/sub 3/O/sub 12//5nm-TiO/sub 2/) was used to control the crystallization and a fine grain structure of Bi/sub 4/Ti/sub 3/O/sub 12/ at a low growth temperature was obtained. 100 nm-Bi/sub 4/Ti/sub 3/O/sub 12/ thin films grown at 400/spl deg/C showed an excellent smooth surface morphology and had good electrical properties, namely, remanent polarization, Pr=11 /spl mu/C/cm/sup 2/, coercive field, Ec=90 kV/cm and low leakage current, IL=7/spl times/10/sup -9/ A/cm/sup 2/ at 3 V. Additionally, for the first time, fatigue free property was confirmed up to 1/spl times/10/sup 12/ switching cycles. Furthermore, it was found that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with a bismuth rich composition showed the (117) preferred orientation and a very large Pr of 23 /spl mu/C/cm/sup 2/.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"54 1","pages":"323-328 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low temperature preparation of fatigue free Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by MOCVD and their electrical properties\",\"authors\":\"T. Kijima, M. Nagata, H. Matsunaga\",\"doi\":\"10.1109/ISAF.1996.602759\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the low temperature MOCVD method to form Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with suitable electrical properties for nonvolatile ferroelectric memory applications. An ultra thin double buffer layer (5nm-Bi/sub 4/Ti/sub 3/O/sub 12//5nm-TiO/sub 2/) was used to control the crystallization and a fine grain structure of Bi/sub 4/Ti/sub 3/O/sub 12/ at a low growth temperature was obtained. 100 nm-Bi/sub 4/Ti/sub 3/O/sub 12/ thin films grown at 400/spl deg/C showed an excellent smooth surface morphology and had good electrical properties, namely, remanent polarization, Pr=11 /spl mu/C/cm/sup 2/, coercive field, Ec=90 kV/cm and low leakage current, IL=7/spl times/10/sup -9/ A/cm/sup 2/ at 3 V. Additionally, for the first time, fatigue free property was confirmed up to 1/spl times/10/sup 12/ switching cycles. Furthermore, it was found that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with a bismuth rich composition showed the (117) preferred orientation and a very large Pr of 23 /spl mu/C/cm/sup 2/.\",\"PeriodicalId\":14772,\"journal\":{\"name\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"54 1\",\"pages\":\"323-328 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1996.602759\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.602759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low temperature preparation of fatigue free Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by MOCVD and their electrical properties
We have investigated the low temperature MOCVD method to form Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with suitable electrical properties for nonvolatile ferroelectric memory applications. An ultra thin double buffer layer (5nm-Bi/sub 4/Ti/sub 3/O/sub 12//5nm-TiO/sub 2/) was used to control the crystallization and a fine grain structure of Bi/sub 4/Ti/sub 3/O/sub 12/ at a low growth temperature was obtained. 100 nm-Bi/sub 4/Ti/sub 3/O/sub 12/ thin films grown at 400/spl deg/C showed an excellent smooth surface morphology and had good electrical properties, namely, remanent polarization, Pr=11 /spl mu/C/cm/sup 2/, coercive field, Ec=90 kV/cm and low leakage current, IL=7/spl times/10/sup -9/ A/cm/sup 2/ at 3 V. Additionally, for the first time, fatigue free property was confirmed up to 1/spl times/10/sup 12/ switching cycles. Furthermore, it was found that the Bi/sub 4/Ti/sub 3/O/sub 12/ thin films with a bismuth rich composition showed the (117) preferred orientation and a very large Pr of 23 /spl mu/C/cm/sup 2/.
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