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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics最新文献

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Grain oriented technology of ferroelectric ceramics 铁电陶瓷的晶粒定向技术
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598140
K. Okazaki
{"title":"Grain oriented technology of ferroelectric ceramics","authors":"K. Okazaki","doi":"10.1109/ISAF.1996.598140","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598140","url":null,"abstract":"Grain oriented technology of anisotropic grains of ferroelectric materials was originated from the two stages hot-pressing for strongest piezoelectric single crystal of SbSI in 1963. Anisotropic ferroelectrics are SbSI and SbSOI with needle shape grain, Bi/sub 2/TiO/sub 3/ like compounds with plate like grains and tungsten bronze like compounds with bar type grains. Doctor blade technology is also important for the developments of this technology.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"11 1","pages":"779-782 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75559296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effects of MnO/sub 2/ addition on the microstructure and piezoelectric properties in Pb(Yb/sub 1/2/Nb/sub 1/2/)O/sub 3/-PbTiO/sub 3/ ceramics near MPB 添加MnO/sub 2/对Pb(Yb/sub 1/2/Nb/sub 1/2/)O/sub 3/-PbTiO/sub 3/陶瓷微结构和压电性能的影响
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598118
Hoon Lim, W. Choo
{"title":"Effects of MnO/sub 2/ addition on the microstructure and piezoelectric properties in Pb(Yb/sub 1/2/Nb/sub 1/2/)O/sub 3/-PbTiO/sub 3/ ceramics near MPB","authors":"Hoon Lim, W. Choo","doi":"10.1109/ISAF.1996.598118","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598118","url":null,"abstract":"The variation of microstructure and piezoelectric properties of the Pb(Yb/sub 1/2/Nb/sub 1/2/)O/sub 3/-PbTiO/sub 3/ the (PYN-PT) solid solution system on addition of MnO/sub 2/ has been investigated. Based on previous works, we have found that the PYN-PT solid solution has a potential for piezoelectric applications owing to its low-temperature sinterability and varieties of dielectric properties displayed by the changing composition. The MnO/sub 2/ addition has caused an improvement in density and piezoelectric properties of the ceramics near the morphotropic phase boundary (x/spl ap/0.5) which separates the pseudocubic and the tetragonal phase regions. For the 0.8 wt.% MnO/sub 2/-doped 0.52PYN-0.48PT ceramics, electromechanical coupling factors, both k/sub p/ and k/sub t/ are found to be 0.41 and 0.34, respectively. Mechanical quality factor (Q/sub m/) is more markedly increased from 79 to 812 with the 0.8wt.%MnO/sub 2/ addition. We can obtain a dense ceramic body which has a uniform grain size (/spl ap/5 /spl mu/m for y=0.8) by an optimum doping of MnO/sub 2/. Thus, we conclude that MnO/sub 2/ might also be an effective dopant for the microstructure and piezoelectric property control of the PYN-PT ceramic system.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"17 1","pages":"695-698 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74731151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Crystal growth and photorefractive properties of (Cu, Ce)-doped KNSBN crystal (Cu, Ce)掺杂KNSBN晶体的生长和光折变特性
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598110
Y. Zhang, E. Pun, D. Lu, E. Wong, P. Chung, D. Mo
{"title":"Crystal growth and photorefractive properties of (Cu, Ce)-doped KNSBN crystal","authors":"Y. Zhang, E. Pun, D. Lu, E. Wong, P. Chung, D. Mo","doi":"10.1109/ISAF.1996.598110","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598110","url":null,"abstract":"KNSBN crystal has been grown successfully with both Cu and Ce dopings. It is found that the Cu and Ce dopings increase effectively the absorption of KNSBN crystal and enhance the photorefractive properties at wavelengths 400-650 nm. Two-wave mixing and self-pumped phase conjugation experiments were carried out on these crystals at 632.8 nm. The two-wave coupling gain and the self-pumped phase conjugation reflectivity were measured to be as large as 10 cm/sup -1/ and 70%, respectively.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"21 1","pages":"679-682 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72883934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determination of the polarization distribution in poled ferroelectric polymer by the thermal pulse method 热脉冲法测定极化铁电聚合物的极化分布
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598046
G.W. Yang, Y. W. Wong, H. Chan, C. Choy
{"title":"Determination of the polarization distribution in poled ferroelectric polymer by the thermal pulse method","authors":"G.W. Yang, Y. W. Wong, H. Chan, C. Choy","doi":"10.1109/ISAF.1996.598046","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598046","url":null,"abstract":"Three thick films of P(VDF-TrFE)(80/20) copolymer have been poled under different conditions. The polarization distributions in these films have been evaluated by least-square fitting the charge response induced by a thermal pulse.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"62 1","pages":"581-583 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73355718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures 用PLZT/STO/Si(100)结构制备mfi - fet
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602719
E. Tokumitsu, R. Nakamura, H. Ishiwara
{"title":"Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures","authors":"E. Tokumitsu, R. Nakamura, H. Ishiwara","doi":"10.1109/ISAF.1996.602719","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602719","url":null,"abstract":"We report fabrication and characterization of p-channel metal-ferroelectric-insulator-semiconductor (MFIS)-FETs using the PLZT/STO/Si(100) structures and demonstrate nonvolatile memory operations of the MFISFETs. It is found that I/sub D/-V/sub G/ characteristics of PLZT/STO/Si MFIS-FETs show a hysteresis loop due to the ferroelectric nature of the PLZT film. It is also demonstrated that the I/sub D/ can be controlled by the \"write\" pulse, which was applied before the measurements, even at the same \"read\" gate voltage.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"86 1","pages":"107-110 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84147842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of sol-gel-derived lead zirconate titanate (PZT) thin films on platinum-coated silicon substrates 镀铂硅衬底上溶胶-凝胶衍生锆钛酸铅薄膜的性能
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602801
Fei Xu, S. Trolier-McKinstry
{"title":"Properties of sol-gel-derived lead zirconate titanate (PZT) thin films on platinum-coated silicon substrates","authors":"Fei Xu, S. Trolier-McKinstry","doi":"10.1109/ISAF.1996.602801","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602801","url":null,"abstract":"Lead zirconate titanate thin films with a composition near the morphotropic phase boundary were prepared by the sol-gel method. Films were crystallized by a rapid thermal annealing (RTA) process. X-ray diffraction was used to monitor the crystallization of the processed films. The microstructure of the films was observed using field-emission scanning electron microscopy. The ferroelectric and dielectric properties of the PZT films fabricated under various annealing conditions were studied. The films showed good hysteresis loops with P/sub /spl tau//=30 /spl mu/C/cm/sup 2/ and E/sub c/=70 kV/cm. Piezoelectric properties were measured by both single beam and double beam interferometers.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"42 1","pages":"511-514 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84513691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Energy considerations of PZT multilayer actuators under dynamic driving conditions 动态驱动条件下PZT多层作动器的能量考虑
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602758
A. Wolff, D. Cramer, H. Heliebrand, C. Schuh, T. Steinkopff, K. Lubitz
{"title":"Energy considerations of PZT multilayer actuators under dynamic driving conditions","authors":"A. Wolff, D. Cramer, H. Heliebrand, C. Schuh, T. Steinkopff, K. Lubitz","doi":"10.1109/ISAF.1996.602758","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602758","url":null,"abstract":"By means of fast optical two channel elongation measurement, with a resolution of 0.05 /spl mu/m, the dynamic behavior of PZT multilayer stack actuators, consisting of some layers and with typical dimensions of 10/spl times/10/spl times/20 mm/sup 3/, driven under different clamping conditions is investigated. In addition to the deflection measurement, the electrical power consumption and the dynamic and static forces are measured simultaneously. Starting from the measurement of the working characteristics, including the determination of dynamic stiffness and blocking force, the mechanical output for different mechanical preloads and for different mechanical stiffnesses of load is evaluated. Choosing the optimum preload and stiffness of load, maximum mechanical output can be achieved. It can be shown that the mechanical load also influences the electrical power consumption of the clamped actuator. Depending on the composition of the PZT ceramic, the clamping conditions may cause depolarization. Under driving conditions additional repolarization effects induce increased deflection. This can be used to find optimum material compositions for given mechanical preloads of clamped actuators.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"8 1","pages":"317-320 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83981768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Requirements of piezoelectric materials for medical ultrasound transducers 医用超声换能器用压电材料要求
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.598040
Dave Walla, Jie Chen, R. T., Gururaja, Hewlett Packard
{"title":"Requirements of piezoelectric materials for medical ultrasound transducers","authors":"Dave Walla, Jie Chen, R. T., Gururaja, Hewlett Packard","doi":"10.1109/ISAF.1996.598040","DOIUrl":"https://doi.org/10.1109/ISAF.1996.598040","url":null,"abstract":"Despite extensive materials development in the past 20+ years, lead zirconate titanate (PZT) based ceramics remain the material of choice in many ultrasonic transducers for medical imaging applications. The intent of this paper is to review the issues faced when choosing a piezoelectric material for a commercial transducer product. Material choices range from the aforementioned PZT family, to other ceramics such as barium titanate, modified lead titanate, lead metaniobate, lead magnesium niobate (PMN) based relaxor compositions, as well as a multitude of ceramic/polymer composite types. Piezoelectric copolymers are yet another possibility.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"23 1","pages":"565-568 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82521406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Flat panel displays: how bright and colorful is the future? 平板显示器:未来有多明亮、多多彩?
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602723
P. Holloway, S. Jones, P. Rack, J. Sebastian, T. Trottier
{"title":"Flat panel displays: how bright and colorful is the future?","authors":"P. Holloway, S. Jones, P. Rack, J. Sebastian, T. Trottier","doi":"10.1109/ISAF.1996.602723","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602723","url":null,"abstract":"The dominant technologies for flat panel displays are reviewed. The current dominant technology is liquid crystal displays, which is a non-emissive light valve technology requiring backlighting and having tremendous advantages in terms of power consumption and cost. The disadvantages include viewing angle and temperature limitations. The competing emissive technologies include electroluminescent, field emission, plasma, and light emitting diode/diode laser displays. These technologies are reviewed and applications of ferroelectric materials are noted.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"127-133 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90896822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Electric field processing of ferroelectric particulate ceramics and composites 铁电颗粒陶瓷及其复合材料的电场加工
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI: 10.1109/ISAF.1996.602733
C. Randall, J. van Tassel, M. Matsko, C. P. Bowen
{"title":"Electric field processing of ferroelectric particulate ceramics and composites","authors":"C. Randall, J. van Tassel, M. Matsko, C. P. Bowen","doi":"10.1109/ISAF.1996.602733","DOIUrl":"https://doi.org/10.1109/ISAF.1996.602733","url":null,"abstract":"The ability to create electroceramic sub-micron particles has outpaced the ability to usefully assemble these particles and utilize the finer particle and grain size characteristics. By suspending these particles in a liquid medium, charges and/or dipoles interacting with an applied electric field can be used to fabricate novel structures. This paper discusses two electric field processes for the manipulation of electroceramic powders: a) electrophoretic deposition for the formation of thin/thick layers, and b) dielectrophoresis for the formation of composites with anisotropic dielectric properties.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"189-192 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89297669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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