镀铂硅衬底上溶胶-凝胶衍生锆钛酸铅薄膜的性能

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI:10.1109/ISAF.1996.602801

Fei Xu, S. Trolier-McKinstry

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引用次数: 4

摘要

采用溶胶-凝胶法制备了组分靠近致形相边界的锆钛酸铅薄膜。薄膜通过快速热退火(RTA)工艺结晶。采用x射线衍射法监测加工膜的结晶过程。利用场发射扫描电镜观察了膜的微观结构。研究了不同退火条件下制备的PZT薄膜的铁电性能和介电性能。P/sub /spl tau//=30 /spl mu/C/cm/sup 2/和E/sub C/ =70 kV/cm时，薄膜表现出良好的磁滞回线。用单光束和双光束干涉仪测量了压电特性。

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Properties of sol-gel-derived lead zirconate titanate (PZT) thin films on platinum-coated silicon substrates

Lead zirconate titanate thin films with a composition near the morphotropic phase boundary were prepared by the sol-gel method. Films were crystallized by a rapid thermal annealing (RTA) process. X-ray diffraction was used to monitor the crystallization of the processed films. The microstructure of the films was observed using field-emission scanning electron microscopy. The ferroelectric and dielectric properties of the PZT films fabricated under various annealing conditions were studied. The films showed good hysteresis loops with P/sub /spl tau//=30 /spl mu/C/cm/sup 2/ and E/sub c/=70 kV/cm. Piezoelectric properties were measured by both single beam and double beam interferometers.

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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

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