电子回旋共振溅射制备Bi/sub - 4/Ti/sub - 3/O/sub - 12/薄膜及其性能

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI:10.1109/ISAF.1996.602787

H. Maiwa, N. Ichinose

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引用次数: 0

摘要

采用电子回旋共振(ECR)溅射技术，在镀有Pt或ir的氧化Si衬底上沉积了铁电薄膜Bi/sub 4/Ti/sub 3/O/sub 12/。研究了薄膜的晶体结构和介电性能随溅射条件(衬底温度、溅射气体压力和所用衬底)的变化规律。与化学计量组成相比，需要使用含有过量铋的靶来补偿基底上的铋再蒸发，并在600/spl度/C下获得钙钛矿单相。(117)取向薄膜表现出铁电磁滞回线。Pt/SiO/ sub2 //Si表面的Bi/sub 4/Ti/sub 3/O/sub 12/薄膜的剩余极化和矫顽力场分别为10.9 /spl mu/C/cm/sup 2/和139 kV/cm /cm。在Ir/SiO/ sub2 //Si上制备的薄膜的电导率分别为3.6 /spl μ /C/cm/sup 2/和99 kV/cm。

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Preparation and properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by electron cyclotron resonance sputtering

Thin films of ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/ were deposited on Pt- or Ir-coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature, sputtering gas pressure and used substrate. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600/spl deg/C. (117)-oriented films exhibited ferroelectric hysteresis loops. The remanent polarization and coercive field of the Bi/sub 4/Ti/sub 3/O/sub 12/ films on Pt/SiO/sub 2//Si were 10.9 /spl mu/C/cm/sup 2/ and 139 kV/cm, respectively. Those of the films on Ir/SiO/sub 2//Si were 3.6 /spl mu/C/cm/sup 2/ and 99 kV/cm, respectively.

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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

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