{"title":"Electrical and mechanical properties of core-shell type structures in doped BaTiO/sub 3/","authors":"R. Buchanan, R. Roseman, K.R. Eufinger","doi":"10.1109/ISAF.1996.598168","DOIUrl":null,"url":null,"abstract":"Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"29 1","pages":"887-890 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.598168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO/sub 2/) and/or aliovalent (Y/sub 2/O/sub 3/, Nd/sub 2/O/sub 3/) doping of the base BaTiO/sub 3/ material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties.