Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials

Abstract

Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented. The exemplified Y-1 FeRAM exhibits excellent characteristics with regard to data transfer rate, operating voltages, etc., which cannot be achieved by other nonvolatile memories such as EEPROMs and FLASH. Preparation and characterization of Y-1 capacitors are also described, which reveal Y-1 seems to be a promising candidate for FeRAM applications because of its fatigue-free behaviour.