Extreme Ultraviolet (EUV) Lithography X最新文献

EUVL: the natural evolution of optical microlithography EUVL:光学微光刻的自然演变

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-10-18 DOI: 10.1117/12.2515791

B. Geh

引用次数: 16

Printability study of EUV double patterning for CMOS metal layers CMOS金属层的EUV双模印刷性研究

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-08-09 DOI: 10.1117/12.2515603

D. D. Simone, G. Vandenberghe

{"title":"Printability study of EUV double patterning for CMOS metal layers","authors":"D. D. Simone, G. Vandenberghe","doi":"10.1117/12.2515603","DOIUrl":"https://doi.org/10.1117/12.2515603","url":null,"abstract":"The impending introduction of EUV lithography into high volume manufacturing at the 7 nm CMOS technology node promises the fulfilment of more than three decades of research and development. However, printing defect-free photoresist features with k1 < 0.4 or line-space pitch < 34 nm using 0.33 NA exposure tools is proving more challenging than originally anticipated. With the introduction timeline of 0.55 NA exposure tools currently unclear, it is necessary to develop EUV multiple patterning strategies for < 34 nm pitch metal layers which are needed to continue area scaling in future 5 nm and/or 3 nm technology nodes. Pursuing EUV-SADP strategies necessitates electrically undesirable dummification of metal wires and the employment of 2 additional masks for self-aligned cutting/blocking of wiring features which may prove cost prohibitive. Therefore, in this study we explore the printability in photoresist of two color EUV LELE or (litho-etch)2 patterns which may be further developed into self-aligned LELE patterning methods. We experimentally examine the impact of image and resist tonality on the printability of minimum line and space for metal wire features. We evaluate the printability of these features based on LCDU, LER, LWR and stochastics defects. Additionally, as EUV exposure time per mask is expected to be a major cost contributor, we quantitatively determine the impact of resist photo-speed on the printability of these two color LELE features.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131826172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism 基于极紫外光敏化机理的ZrO2纳米颗粒抗蚀剂的行-空模式分析

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-06-28 DOI: 10.1117/12.2515133

T. Kozawa, Teppei Yamada, A. Nakajima, Y. Muroya, J. Santillan, T. Itani

{"title":"Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism","authors":"T. Kozawa, Teppei Yamada, A. Nakajima, Y. Muroya, J. Santillan, T. Itani","doi":"10.1117/12.2515133","DOIUrl":"https://doi.org/10.1117/12.2515133","url":null,"abstract":"Metal oxide nanoparticle resists are promising materials for highly-resolving high-throughput patterning. However, their performance is still inadequate for the application to the production of semiconductor devices. In this study, the dependence of the relationship between chemical gradient and line width roughness (LWR) on the pattern duty, acid generator, and developer was investigated using a zirconia (ZrO2) nanoparticle resist. The line-and-space patterns of ZrO2 nanoparticle resists were analyzed on the basis of the EUV sensitization mechanism. LWR was roughly inversely proportional to the chemical gradient. The proportionality constant decreased with the increase of the ratio of nominal space width to the nominal line width. The proportionality constant for n-butyl acetate was smaller than that for an alternative developer with a high polarity. The proportionality constant decreased by the addition of an acid generator. The improvement of dissolution process and the suppression of secondary electron migration are essential to the suppression of LWR in the ZrO2 nanoparticle resist.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"519 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134099722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Actinic metrology platform for defect review and mask qualification: flexibility and performance 用于缺陷评审和掩膜鉴定的光化计量平台:灵活性和性能

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-06-10 DOI: 10.1117/12.2518596

R. Capelli, M. Dietzel, D. Hellweg, M. Koch, G. Kersteen, K. Gwosch, D. Pagel

引用次数: 9

High-power LPP-EUV source with long collector mirror lifetime for semiconductor high-volume manufacturing 高功率LPP-EUV源，具有长集电极镜寿命，适用于半导体大批量生产

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-06-06 DOI: 10.1117/12.2514033

H. Mizoguchi, H. Nakarai, T. Abe, Y. Kawasuji, Hiroshi Tanaka, Y. Watanabe, T. Hori, T. Kodama, Yutaka Shiraishi, T. Yanagida, G. Soumagne, Tsuyoshi Yamada, T. Yamazaki, Takashi Saitou

{"title":"High-power LPP-EUV source with long collector mirror lifetime for semiconductor high-volume manufacturing","authors":"H. Mizoguchi, H. Nakarai, T. Abe, Y. Kawasuji, Hiroshi Tanaka, Y. Watanabe, T. Hori, T. Kodama, Yutaka Shiraishi, T. Yanagida, G. Soumagne, Tsuyoshi Yamada, T. Yamazaki, Takashi Saitou","doi":"10.1117/12.2514033","DOIUrl":"https://doi.org/10.1117/12.2514033","url":null,"abstract":"We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 1) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation2). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 20163). Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= 0.5%/Gp) above 100W level operation with dummy mirror test.4). \u0000Recently we have demonstrated actual collector mirror reflectivity degradation rate is less than -0.4%/Gp by using real collector mirror around 100W ( at I/F clean ) in burst power during 30 Billion pulses operation. We will report latest data 125W average operation with actual collector mirror at conference.\u0000Reference\u00001) Hakaru Mizoguchi, et. al.: “Sub-hundred Watt operation demonstration of HVM LPP-EUV source”, Proc. SPIE 9048, (2014) \u00002) Yoichi Tanino et.al.:” A Driver CO2 Laser Using Transverse-flow CO2 Laser Amplifiers”, EUV Symposium 2013, ( Oct.6-10.2013, Toyama)\u00003) Hakaru Mizoguchi et al.:” Performance of 250W High Power HVM LPP-EUV Source”, Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII (2017)\u00004) Hakaru Mizoguchi, et al: ” High Power HVM LPP-EUV Source with Long Collector Mirror Lifetime”, EUVL Workshop 2017, (Berkley, 12-15, June, 2017)","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123930439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Electrically measurable test structures to capture and classify EUV stochastics 用于捕获和分类EUV随机特性的电可测量测试结构

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-06-04 DOI: 10.1117/12.2515418

H. Vats, R. R. Kim, Y. Sherazi, Y. Drissi, K. Ronse

引用次数: 0

Interferometric measurement of phase in EUV masks 干涉法测量EUV掩模的相位

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-06-04 DOI: 10.1117/12.2518057

Wenhua Zhu, R. Miyakawa, Lei Chen, P. Naulleau

引用次数: 3

Litho-performance expansion with new SOC made from Hemicellulose 由半纤维素制成的新型SOC的光刻性能扩展

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-06-04 DOI: 10.1117/12.2517692

M. Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, M. Asai, C. Pieczulewski, H. Stokes, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Kazuyo Morita

{"title":"Litho-performance expansion with new SOC made from Hemicellulose","authors":"M. Harumoto, Yuji Tanaka, Chisayo Nakayama, You Arisawa, M. Asai, C. Pieczulewski, H. Stokes, Kimiko Yamamoto, Hiroki Tanaka, Yasuaki Tanaka, Kazuyo Morita","doi":"10.1117/12.2517692","DOIUrl":"https://doi.org/10.1117/12.2517692","url":null,"abstract":"Tri-layer processes, which typically consist of photoresist, Si containing anti-reflective coating (Si-ARC) and spin on carbon (SOC), have been widely used since ArF immersion lithography. Continually reduced pattern dimensions need thinner photoresist films due to the common phenomenon of post-develop line collapse with higher aspect ratios. Consequently, it has been necessary to enhance pattern transfer performance after etching with such tri-layer processes. Successfully implementing tri-layer processes requires consideration of issues such as increased process steps, cost, and other inherent limitations of pattern transfer enhancement with a more complicated stack. In this work, we present a hemicellulose SOC material with the outstanding advantage of Si etch selectivity greater than 15. Hemicellulose SOC could significantly reduce pattern transfer limitations for etching, therefore the benefits of processing higher aspect ratio structures can be more easily achieved. Herein, we investigate the hemicellulose SOC lithography performance using resolution, sensitivity, and line width roughness as metrics. Also, we demonstrate these lithography performances through the etching. During the conference, we will discuss the potential issues of next generation processes using ArF immersion and EUV lithography.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128476807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists 高分辨率抗蚀剂中聚(4-羟基苯乙烯)溶解动力学的基础研究

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-05-31 DOI: 10.1117/12.2514938

A. Nakajima, Kyoko Watanabe, Kyoko Matsuoka, T. Kozawa, Yoshitaka Komuro, Daisuke Kawana, A. Yamazaki

引用次数: 3

Ion dynamics in laser-produced plasma for EUV generation in nanolithography devices 纳米光刻器件中产生EUV的激光等离子体中的离子动力学

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-05-31 DOI: 10.1117/12.2514985

T. Sizyuk

{"title":"Ion dynamics in laser-produced plasma for EUV generation in nanolithography devices","authors":"T. Sizyuk","doi":"10.1117/12.2514985","DOIUrl":"https://doi.org/10.1117/12.2514985","url":null,"abstract":"Increasing EUV photon power in laser-produced plasma (LPP) sources is critically needed for efficient nanolithography devices. Improving debris mitigation methods is another important subject in the development of EUV sources for high volume manufacture tools. We investigated different mechanisms affecting ions acceleration in LPP to predict the maximum ion energies and flux arriving at the mirror surface. We studied in details plasma evolution produced by Nd:YAG laser from Sn target to predict EUV producing ions dynamics and their contributions to EUV source. \u0000The 3D multi-physics fully integrated HEIGHTS package was used in this analysis. We continue to develop, enhance, and benchmark the models implemented in our package to include various physics involved in LPP systems. HEIGHTS simulation of detail ion kinetic energies were compared with experimental data and showed great confidence in our advanced self-integrated models that can then be used for the explanation of the experimental data as well as for various predictions. Spatial and charge distributions were predicted for EUV producing ions and debris. We studied various target configurations and laser parameters to enhance the power of EUV sources as well as to reduce and mitigate ions and debris effects on the collecting mirror system. The comprehensive integrated full 3D models allowed accurate simulation of all processes of plasma formation, dynamics, and EUV photons emission and collection.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123368240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0