EUVL:光学微光刻的自然演变

Extreme Ultraviolet (EUV) Lithography X Pub Date : 2019-10-18 DOI:10.1117/12.2515791

B. Geh

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引用次数: 16

摘要

EUV光刻已准备好大批量生产，进一步使印刷更小的特征。在这个主题演讲中，作者将简要地反思数字技术的演变和未来。概述光刻透镜的发展和主要里程碑-像差是一个主要焦点-从1990年中期到今天。其他方面-如掩模3D效果，源掩模优化，高NA EUV和随机将被讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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EUVL: the natural evolution of optical microlithography

EUV Lithography is ready for High Volume Production, further enabling the printing of ever smaller features. In this keynote, the author will briefly reflect on evolution and future of digital technologies. An overview of the development and major milestones of Lithography lenses – with aberrations being a main focus – from the mid 1990 to today will be presented. Other aspects – like mask 3D effects, Source Mask Optimization, High NA EUV and Stochastic will be discussed.

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来源期刊

Extreme Ultraviolet (EUV) Lithography X

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