Ulis 2011 Ultimate Integration on Silicon最新文献_第2页

Modeling of thermal network in silicon power MOSFETs 硅功率mosfet的热网建模

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757975

P. Magnone, C. Fiegna, G. Greco, G. Bazzano, E. Sangiorgi, S. Rinaudo

引用次数: 7

Fabrication of ZnO nanowire device using top-down approach 自顶向下法制备ZnO纳米线器件

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757956

S. M. Sultan, K. Sun, J. Partridge, M. Allen, P. Ashburn, H. Chong

引用次数: 0

Ge quantum dot Schottky diode operated in a 89GHz Rectenna Ge量子点肖特基二极管在89GHz整流天线中工作

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758017

A. Karmous, H. Xu, M. Oehme, E. Kasper, J. Schulze

引用次数: 0

Tunneling path impact on semi-classical numerical simulations of TFET devices 隧道路径对TFET器件半经典数值模拟的影响

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758002

L. De Michielis, M. Iellina, P. Palestri, A. Ionescu, L. Selmi

引用次数: 3

Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations 具有均匀通道(包括应变和任意晶体取向)的Si圆柱形纳米线掐断非场效应管和pfet的静电量子模拟

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757989

A. Pham, B. Sorée, W. Magnus, C. Jungemann, B. Meinerzhagen, G. Pourtois

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引用次数: 4

A simulation study of N-shell silicon nanowires as biological sensors n壳硅纳米线作为生物传感器的仿真研究

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758003

S. Rigante, P. Livi, A. Hierlemann, A. Ionescu

引用次数: 0

Fully etched grating couplers for atomic layer deposited horizontal slot waveguides 用于原子层沉积水平槽波导的全蚀刻光栅耦合器

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758007

M. Naiini, G. Malm, M. Ostling

引用次数: 5

Nanocarbon structures for electronic applications — A critical review 电子应用的纳米碳结构——综述

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758010

G. Duesberg

引用次数: 0

Monolithic 3D-ICs with single grain Si thin film transistors 单粒硅薄膜晶体管的单片3d集成电路

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758004

R. Ishihara, N. Golshani, J. Derakhshandeh, M. R. T. Mofrad, C. Beenakker

引用次数: 8

Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods 漏极电压对跨导变化法和gm/Id法测定MOSFET阈值电压的影响

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758012

T. Rudenko, V. Kilchytska, M. Arshad, J. Raskin, A. Nazarov, D. Flandre

引用次数: 3