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Ulis 2011 Ultimate Integration on Silicon最新文献

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Electron injection from n-type Si substrates into (i) Transition metal high-k dielectrics and (ii) SiO2 and Si oxynitride alloys: Conduction band edge states and negative ion state electron trap differences 从n型Si衬底向(i)过渡金属高k介电体和(ii) SiO2和氮化硅氧合金中的电子注入:导带边缘态和负离子态电子阱的差异
Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757999
G. Lucovsky, D. Zeller, K. Wu, J. Kim
{"title":"Electron injection from n-type Si substrates into (i) Transition metal high-k dielectrics and (ii) SiO2 and Si oxynitride alloys: Conduction band edge states and negative ion state electron trap differences","authors":"G. Lucovsky, D. Zeller, K. Wu, J. Kim","doi":"10.1109/ULIS.2011.5757999","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757999","url":null,"abstract":"The limiting performance and reliability of metal-oxide-semiconductor (MOS) devices is determined by intrinsic bonding defects. These are primarily O-atom vacancies. A universal model, developed initially for (i) nano-crystalline transition metal (TM) Oxides is extended to O-vacancies in (i) non-crystalline SiO2 and Si oxynitride alloys. Differences between electron injection into, and trapping ay O-vacancy states in SiO2 and TM oxides are correlated with differences in wave function symmetries of conducition band edge electronic states.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134025170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the effective mass of holes in inversion layers 反演层中孔洞有效质量的研究
Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757950
L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling
{"title":"On the effective mass of holes in inversion layers","authors":"L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling","doi":"10.1109/ULIS.2011.5757950","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757950","url":null,"abstract":"We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133089631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AC analysis of defect cross sections using non-radiative MPA quantum model 用非辐射MPA量子模型对缺陷截面进行交流分析
Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757973
D. Garetto, Y. M. Randriamihaja, A. Zaka, D. Rideau, A. Schmid, Herve Jaouem, Y. Leblebici
{"title":"AC analysis of defect cross sections using non-radiative MPA quantum model","authors":"D. Garetto, Y. M. Randriamihaja, A. Zaka, D. Rideau, A. Schmid, Herve Jaouem, Y. Leblebici","doi":"10.1109/ULIS.2011.5757973","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757973","url":null,"abstract":"A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":" 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120829951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model 基于全解析模型的轻掺杂肖特基势垒dg - mosfet源极/漏极载流子隧穿二维分析
Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5758014
M. Schwarz, T. Holtij, A. Kloes, B. Iñíguez
{"title":"2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model","authors":"M. Schwarz, T. Holtij, A. Kloes, B. Iñíguez","doi":"10.1109/ULIS.2011.5758014","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5758014","url":null,"abstract":"A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132139734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude 利用Id(Vg)特性和随机电报噪声幅度提取纳米线mosfet的沟道迁移率
Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI: 10.1109/ULIS.2011.5757991
A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge
{"title":"Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude","authors":"A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge","doi":"10.1109/ULIS.2011.5757991","DOIUrl":"https://doi.org/10.1109/ULIS.2011.5757991","url":null,"abstract":"Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129182622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Welcome — Fáilte
Ulis 2011 Ultimate Integration on Silicon Pub Date : 1900-01-01 DOI: 10.1109/ulis.2011.5757949
{"title":"Welcome — Fáilte","authors":"","doi":"10.1109/ulis.2011.5757949","DOIUrl":"https://doi.org/10.1109/ulis.2011.5757949","url":null,"abstract":"","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127743795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Atomic scale simulation of a junctionless silicon nanowire transistor 无结硅纳米线晶体管的原子尺度模拟
Ulis 2011 Ultimate Integration on Silicon Pub Date : 1900-01-01 DOI: 10.1109/ulis.2011.5757976
L. Ansari, B. Feldman, G. Fagas, J. Colinge, J. Greer
{"title":"Atomic scale simulation of a junctionless silicon nanowire transistor","authors":"L. Ansari, B. Feldman, G. Fagas, J. Colinge, J. Greer","doi":"10.1109/ulis.2011.5757976","DOIUrl":"https://doi.org/10.1109/ulis.2011.5757976","url":null,"abstract":"We have simulated silicon nanowire junctionless transistors with a 3 nm gate length within a Density Functional Theory (DFT) framework. We explored the response of transistors to source-drain bias, VDS, and gate voltage, Vg. Also, the effect of bulk and surface adatom in the wire cross section was evaluated.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129672221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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