反演层中孔洞有效质量的研究

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5757950

L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling

{"title":"反演层中孔洞有效质量的研究","authors":"L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling","doi":"10.1109/ULIS.2011.5757950","DOIUrl":null,"url":null,"abstract":"We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the effective mass of holes in inversion layers\",\"authors\":\"L. Donetti, F. Gámiz, S. M. Thomas, T. Whall, D. Leadley, P. Hellstrom, G. Malm, M. Ostling\",\"doi\":\"10.1109/ULIS.2011.5757950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.\",\"PeriodicalId\":146779,\"journal\":{\"name\":\"Ulis 2011 Ultimate Integration on Silicon\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ulis 2011 Ultimate Integration on Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2011.5757950\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5757950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们使用基于六波段k·p模型的自一致模拟器研究了大块mosfet和绝缘体上硅器件中的空穴反转层。计算了不同器件取向和硅层厚度下的价带结构，并通过计算不同的有效质量来表征价带结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

On the effective mass of holes in inversion layers

We study hole inversion layers in bulk MOSFETs and silicon-on-insulator devices employing a self-consistent simulator based on the six-band k·p model. Valence Band structure is computed for different device orientations and silicon layer thicknesses, and then it is characterized through the calculation of different effective masses.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Ulis 2011 Ultimate Integration on Silicon

自引率

0.00%

发文量