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International Electron Devices Meeting 1991 [Technical Digest]最新文献

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A novel multiple focus position control method by conjugate twin-shifter phase shift lithography 一种新型的共轭双移相光刻多焦点位置控制方法
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235424
H. Ohtsuka, T. Onodera, K. Kuwahara, T. Taguchi
{"title":"A novel multiple focus position control method by conjugate twin-shifter phase shift lithography","authors":"H. Ohtsuka, T. Onodera, K. Kuwahara, T. Taguchi","doi":"10.1109/IEDM.1991.235424","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235424","url":null,"abstract":"A novel phase shift lithography method has been developed that allows different IC features on the same mask to be focused simultaneously in different optical phases. This permits the focal position of each feature to be shifted to match the surface topography of the wafer. The direction and magnitude of each focal shift are determined by the design of mask phase shifters. This method is applicable for use with both conventional Cr opaque mask patterns and contrast-enhanced phase shift patterns. The effective depth of focus (DOF) range can be increased by 2.0 mu m or more by permitting more of the available DOF budget to be used for random focus fluctuations rather than for normal surface topography. Characteristics of this method are evaluated both experimentally and theoretically using TCC optical simulation. Typical mask structures are described. Results are shown using positive and negative i-line resist processes on features down to 0.30 mu m lines and isolated features down to 0.35 mu m.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"23 1","pages":"59-62"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87603169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Very low temperature fabrication of poly-Si TFTs using infra-low pressure chemical vapour deposited (ILPCVD) poly-crystalline Si films 利用次低压化学气相沉积(ILPCVD)多晶Si薄膜在极低温下制备多晶硅tft
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235408
M. Miyasaka, T. Nakazawa, H. Ohshima
{"title":"Very low temperature fabrication of poly-Si TFTs using infra-low pressure chemical vapour deposited (ILPCVD) poly-crystalline Si films","authors":"M. Miyasaka, T. Nakazawa, H. Ohshima","doi":"10.1109/IEDM.1991.235408","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235408","url":null,"abstract":"As-deposited polycrystalline silicon (poly-Si) films prepared by infra-low pressure chemical vapor deposition (ILPCVD) at surprisingly low temperatures, such as 555 degrees C or 570 degrees C, have been found to enable the fabrication of excellent poly-Si TFTs (thin-film transistors) having ON/OFF current ratios of nearly 10/sup 8/. While aiming at the improvement of low-temperature-processed poly-Si TFTs, the ILPCVD has been used to reduce the partial pressure of SiH/sub 4/ by increasing the pumping speed. This work reveals the great potential of ILPCVD for fabricating high-quality as-deposited poly-Si TFTs at a maximum processing temperature as low as 555 degrees C.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"119 1","pages":"559-562"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74837178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD MOCVD生长的680nm MQB可见激光二极管的特性
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235393
T. Motoda, K. Kadoiwa, T. Kimura, T. Nishimura, F. Uesugi, T. Kamizato, S. Arimoto, M. Tsugami, K. Mizuguchi
{"title":"Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD","authors":"T. Motoda, K. Kadoiwa, T. Kimura, T. Nishimura, F. Uesugi, T. Kamizato, S. Arimoto, M. Tsugami, K. Mizuguchi","doi":"10.1109/IEDM.1991.235393","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235393","url":null,"abstract":"The authors introduced MQB (multiquantum barrier) structure grown by metal-organic chemical vapor deposition in an AlGaInP visible laser and improved the laser characteristics. The threshold current at 70 degrees C is reduced from 70 mA to 56 mA, and the characteristic temperature in the range over 70 degrees C is improved from 52 K to 69 K. This improvement is due to the suppression of carrier overflow by the MQB structure. This is a kind of electron wave interference device working at room temperature.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"29 1","pages":"623-626"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79070697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A NiSi salicide technology for advanced logic devices 一种用于高级逻辑器件的NiSi杀毒技术
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235387
T. Morimoto, H. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai
{"title":"A NiSi salicide technology for advanced logic devices","authors":"T. Morimoto, H. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai","doi":"10.1109/IEDM.1991.235387","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235387","url":null,"abstract":"A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"33 1","pages":"653-656"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75618220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Application of AlGaAs/GaAs ballistic collection transistors to multiplexer and preamplifier circuits AlGaAs/GaAs弹道采集晶体管在多路复用和前置放大电路中的应用
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235304
Y. Matsuoka, S. Yamahata, H. Ichino, E. Sano, T. Ishibashi
{"title":"Application of AlGaAs/GaAs ballistic collection transistors to multiplexer and preamplifier circuits","authors":"Y. Matsuoka, S. Yamahata, H. Ichino, E. Sano, T. Ishibashi","doi":"10.1109/IEDM.1991.235304","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235304","url":null,"abstract":"Ballistic collection transistors with a 'launcher' (L-BCTs) are applied to the fabrication of high-speed/broadband ICs. The L-BCTs, in which base widening is suppressed and the ballistic transport of electrons is utilized to reduce transit time without an increase in base collector capacitance, are combined with a novel self-alignment process technology that makes it possible to enlarge the cutoff frequency f/sub T/ to around 160 GHz with excellent uniformity. A 19-Gb/s operation has been demonstrated in a fabricated 2:1 multiplexer with a retiming function at the input/output stages. A fabricated monolithic preamplifier exhibits a transimpedance of 52 dB Omega with a 3-dB-down bandwidth of 18.5 GHz and a gain of S/sub 21/ of 21 dB with a 3-dB-down bandwidth of 19 GHz. These results demonstrate that the L-BCTs are very promising for ICs such as those used in ultrahigh-speed digital transmission systems.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"26 1","pages":"797-800"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80619106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's 氧化物和ROXNOX n沟道MOSFET的交流热载流子寿命
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235320
K. Mistry, B. Doyle, A. Philipossian, D. B. Jackson
{"title":"AC hot carrier lifetimes in oxide and ROXNOX N-channel MOSFET's","authors":"K. Mistry, B. Doyle, A. Philipossian, D. B. Jackson","doi":"10.1109/IEDM.1991.235320","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235320","url":null,"abstract":"A recently developed model for AC hot carrier degradation is extended to low-temperature operation as well as to ROXNOX (reoxidized nitrided oxide) dielectrics. Three hot carrier damage mechanisms are incorporated into the model: interface states and oxide electron traps created at low gate voltages, interface states created at medium gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under AC stress. The model is shown to be valid at 173 K and 295 K for both typical and worst-case AC stress waveforms found in CMOS circuits. It is also shown to be valid for ROXNOX MOSFETs.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"279 1","pages":"727-730"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75117414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Interaction efficiency of an emission gated TWT 发射门控行波管的相互作用效率
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235401
M. Kodis, H. Freund, N.R. Vanderplaats, E.G. Zaidman
{"title":"Interaction efficiency of an emission gated TWT","authors":"M. Kodis, H. Freund, N.R. Vanderplaats, E.G. Zaidman","doi":"10.1109/IEDM.1991.235401","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235401","url":null,"abstract":"The Emission Gated Device Experiment extracts RF power from a prebunched electron beam passing through a short helix traveling wave circuit. Efficient and compact amplifiers are possible through this approach because of the large component of RF current in a tightly bunched beam. While a wideband, high gain, high power input circuit for such devices is beyond the present state of the art, high transconductance gated field emission cathodes are being developed for emission gated devices. The present experiment is designed to test the performance of the output coupler using a cavity-driven cathode circuit. Twenty percent beam coupling efficiency has been observed from a helix one slow wavelength long.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"33 1","pages":"589-592"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78054340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Quarter-micron selective-epitaxial-silicon refilled trench (SRT) isolation technology with substrate shield 衬底屏蔽四分之一微米选择性外延硅填充沟槽(SRT)隔离技术
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235359
M. Aoki, H. Takato, S. Samata, M. Numano, A. Yagishita, K. Hieda, A. Nitayama, F. Horiguchi
{"title":"Quarter-micron selective-epitaxial-silicon refilled trench (SRT) isolation technology with substrate shield","authors":"M. Aoki, H. Takato, S. Samata, M. Numano, A. Yagishita, K. Hieda, A. Nitayama, F. Horiguchi","doi":"10.1109/IEDM.1991.235359","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235359","url":null,"abstract":"In order to realize high-density and stress-free field isolation for future ULSIs, the authors propose a selective-epitaxial-silicon refilled trench (SRT) isolation. The SRT isolation structure consists of a thin insulator film on the trench sidewalls, a selective-epitaxial-growth (SEG) silicon layer refilling the trench, and a capping oxide covering the trench openings. By using this isolation, the number of isolation process steps can be reduced to 60% of the number for a conventional process, and the stress induced by the thermal process can be minimal. The authors have succeeded in fabricating a 0.2- mu m isolation structure and have confirmed its excellent characteristics.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"8 1","pages":"447-450"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74013749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A model for boron short time diffusion after ion implantation 离子注入后硼的短时扩散模型
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235326
M. Hane, H. Matsumoto
{"title":"A model for boron short time diffusion after ion implantation","authors":"M. Hane, H. Matsumoto","doi":"10.1109/IEDM.1991.235326","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235326","url":null,"abstract":"A simulation model for boron diffusion in silicon, especially useful for analyzing the short time annealing process subsequent to ion implantation, is proposed. This model takes into account nonequilibrium diffusion and reactions of point defects and defect-dopant pairs, considering their charge states, and the dopant inactivation by introducing a dopant clustering reaction. Using a single set of reasonable parameters, the model covers not only the equilibrium diffusion from intrinsic to extrinsic condition, but the nonequilibrium postimplantation diffusion. Experimental boron distribution profiles can be well reproduced in terms of transient-enhanced diffusion and incomplete activation.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"1 1","pages":"701-704"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86358569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High resolution optical lithography system using oblique incidence illumination 斜入射照明的高分辨率光学光刻系统
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235262
S. Matsuo, K. Komatsu, Y. Takeuchi, E. Tamechika, Y. Mimura, K. Harada
{"title":"High resolution optical lithography system using oblique incidence illumination","authors":"S. Matsuo, K. Komatsu, Y. Takeuchi, E. Tamechika, Y. Mimura, K. Harada","doi":"10.1109/IEDM.1991.235262","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235262","url":null,"abstract":"Summary form only given. The authors propose a novel optical lithography system that has a resolving power more than 1.6 times higher than the resolving power of conventional projection systems. This system offers the superior practical advantage of using conventional masks without phase shifters. The authors explain the principle of the system and present its experimental confirmation. Possible applications to advanced processes are also mentioned. The combination of the optical system with an i-line and KrF excimer laser source will most probably be the lithography method used for 64 M and 245 M DRAM (dynamic RAM) processes.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"48 1","pages":"970-972"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88177117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
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