{"title":"利用次低压化学气相沉积(ILPCVD)多晶Si薄膜在极低温下制备多晶硅tft","authors":"M. Miyasaka, T. Nakazawa, H. Ohshima","doi":"10.1109/IEDM.1991.235408","DOIUrl":null,"url":null,"abstract":"As-deposited polycrystalline silicon (poly-Si) films prepared by infra-low pressure chemical vapor deposition (ILPCVD) at surprisingly low temperatures, such as 555 degrees C or 570 degrees C, have been found to enable the fabrication of excellent poly-Si TFTs (thin-film transistors) having ON/OFF current ratios of nearly 10/sup 8/. While aiming at the improvement of low-temperature-processed poly-Si TFTs, the ILPCVD has been used to reduce the partial pressure of SiH/sub 4/ by increasing the pumping speed. This work reveals the great potential of ILPCVD for fabricating high-quality as-deposited poly-Si TFTs at a maximum processing temperature as low as 555 degrees C.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"119 1","pages":"559-562"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Very low temperature fabrication of poly-Si TFTs using infra-low pressure chemical vapour deposited (ILPCVD) poly-crystalline Si films\",\"authors\":\"M. Miyasaka, T. Nakazawa, H. Ohshima\",\"doi\":\"10.1109/IEDM.1991.235408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As-deposited polycrystalline silicon (poly-Si) films prepared by infra-low pressure chemical vapor deposition (ILPCVD) at surprisingly low temperatures, such as 555 degrees C or 570 degrees C, have been found to enable the fabrication of excellent poly-Si TFTs (thin-film transistors) having ON/OFF current ratios of nearly 10/sup 8/. While aiming at the improvement of low-temperature-processed poly-Si TFTs, the ILPCVD has been used to reduce the partial pressure of SiH/sub 4/ by increasing the pumping speed. This work reveals the great potential of ILPCVD for fabricating high-quality as-deposited poly-Si TFTs at a maximum processing temperature as low as 555 degrees C.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"119 1\",\"pages\":\"559-562\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Very low temperature fabrication of poly-Si TFTs using infra-low pressure chemical vapour deposited (ILPCVD) poly-crystalline Si films
As-deposited polycrystalline silicon (poly-Si) films prepared by infra-low pressure chemical vapor deposition (ILPCVD) at surprisingly low temperatures, such as 555 degrees C or 570 degrees C, have been found to enable the fabrication of excellent poly-Si TFTs (thin-film transistors) having ON/OFF current ratios of nearly 10/sup 8/. While aiming at the improvement of low-temperature-processed poly-Si TFTs, the ILPCVD has been used to reduce the partial pressure of SiH/sub 4/ by increasing the pumping speed. This work reveals the great potential of ILPCVD for fabricating high-quality as-deposited poly-Si TFTs at a maximum processing temperature as low as 555 degrees C.<>
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