T. Motoda, K. Kadoiwa, T. Kimura, T. Nishimura, F. Uesugi, T. Kamizato, S. Arimoto, M. Tsugami, K. Mizuguchi
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Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD
The authors introduced MQB (multiquantum barrier) structure grown by metal-organic chemical vapor deposition in an AlGaInP visible laser and improved the laser characteristics. The threshold current at 70 degrees C is reduced from 70 mA to 56 mA, and the characteristic temperature in the range over 70 degrees C is improved from 52 K to 69 K. This improvement is due to the suppression of carrier overflow by the MQB structure. This is a kind of electron wave interference device working at room temperature.<>
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