一种用于高级逻辑器件的NiSi杀毒技术

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235387

T. Morimoto, H. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai

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引用次数: 30

摘要

开发了一种用于深亚微米器件的硅化镍(NiSi)技术。结果表明，在低温(600℃)条件下，Ni薄膜可在短时间内稳定地转变为单硅化物(NiSi)，且无团聚现象。NiSi层在硅化过程中不吸收硼或砷原子，并且在硅化物/硅界面处实现了高浓度的硼或砷，有助于降低接触电阻。将NiSi技术应用于双栅CMOS结构。成功地获得了n-和p- mosfet优异的pn结特性和高驱动性。

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A NiSi salicide technology for advanced logic devices

A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.<>

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来源期刊

International Electron Devices Meeting 1991 [Technical Digest]

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