Very low temperature fabrication of poly-Si TFTs using infra-low pressure chemical vapour deposited (ILPCVD) poly-crystalline Si films

Abstract

As-deposited polycrystalline silicon (poly-Si) films prepared by infra-low pressure chemical vapor deposition (ILPCVD) at surprisingly low temperatures, such as 555 degrees C or 570 degrees C, have been found to enable the fabrication of excellent poly-Si TFTs (thin-film transistors) having ON/OFF current ratios of nearly 10/sup 8/. While aiming at the improvement of low-temperature-processed poly-Si TFTs, the ILPCVD has been used to reduce the partial pressure of SiH/sub 4/ by increasing the pumping speed. This work reveals the great potential of ILPCVD for fabricating high-quality as-deposited poly-Si TFTs at a maximum processing temperature as low as 555 degrees C.<>