{"title":"Power stabilization control of wireless charging system based on LCL-P compensation structure","authors":"Yonghui Yue, Zhenao Sun, Mingyu Lu","doi":"10.1002/cta.4250","DOIUrl":"10.1002/cta.4250","url":null,"abstract":"<p>To enhance the stabilizing function and boost the output power of the inductive coupling power transfer (ICPT) system, a power stabilization control method based on LCL-P resonance compensation for a wireless energy transmission system is proposed. “L” represents inductance, “C” represents capacitance, “LCL” refers to the primary-side compensation structure, and “P” indicates that the secondary side is compensated in parallel . Firstly, this paper synthesizes the modeling principle of the gyrator equivalent model of the resonant circuit and coupled inductor, graphically analyzes the resonant compensation structure, and derives the circuit characteristics of the LCL-P compensation structure. Then, this paper proposes an improved control strategy for the Maximum Power Point Tracking (MPPT) algorithm to dynamically track the output power and thus obtain the optimal operating point through frequency conversion. Lastly, using MATLAB/Simulink software to build the simulation model of the wireless charging system through parameter design, the impact of the conventional DC/DC power control method is contrasted with the algorithmic control suggested in this paper. The results demonstrate that: the device can realize power transfer of 2.7 KW level, the energy transfer efficiency reaches more than 90%, the inverter realizes soft-switching operation, and the improved MPPT algorithmic control strategy proposed in this paper is utilized to achieve better closed-loop control of the system. The excellent characteristics of the LCL-P compensation structure in high-power transmission applications, as well as the correctness and feasibility of the control algorithm proposed in this paper, are demonstrated through simulation and practical experiments. This is a significant step towards improving the wide-range adaptation of the wireless charging system, which is based on the LCL-P resonance compensation to the changes in the load and coupling.</p>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 5","pages":"3119-3135"},"PeriodicalIF":1.8,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142181751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xinbo Liu, Bo Liu, Shuiyuan He, Lijian Diao, Lijun Diao
{"title":"Junction temperature monitoring of silicon carbide MOSFET based on turn-off voltage spike","authors":"Xinbo Liu, Bo Liu, Shuiyuan He, Lijian Diao, Lijun Diao","doi":"10.1002/cta.4245","DOIUrl":"10.1002/cta.4245","url":null,"abstract":"<p>Because of the advantages of high switching speed, silicon carbide (SiC) devices are widely used in high-power power electronic equipment. Real-time monitoring of junction temperature is very important for the safe operation of equipment. There have been many studies on traditional junction temperature monitoring methods based on Si IGBT, but the dynamic characteristics of SiC MOSFETs are changed due to their different physical structure and parasitic parameters, which make the traditional methods no longer applicable. In this paper, the junction temperature can be extracted from the switching process of SiC MOSFET by using the turn-off voltage spike as the index of thermosensitive electrical parameter (TSEP). In addition, the effect of working voltage, current, and different materials on turn-off voltage spike is also studied. The simulation platform of Ansys/Simplorer and the experimental test platforms are built, and the theory of junction temperature detection based on turn-off voltage spike is verified. The simulation and experimental results show that turn-off voltage spike is a feasible TSEP, which can be used to extract junction temperature of SiC MOSFET with good linearity and instantaneity.</p>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 5","pages":"2927-2946"},"PeriodicalIF":1.8,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142181756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Khalid K. Ali, Mohamed S. Mohamed, Weam G. Alharbi
{"title":"Investigating new solutions for a general form of \u0000\u0000 q-deformed equation: An analytical and numerical study","authors":"Khalid K. Ali, Mohamed S. Mohamed, Weam G. Alharbi","doi":"10.1002/cta.4199","DOIUrl":"10.1002/cta.4199","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper contributes to the study of a new model called the \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformed equation or the \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformed tanh-Gordon model. To understand physical systems with violated symmetries. We utilize the \u0000<span></span><math>\u0000 <mfenced>\u0000 <mrow>\u0000 <mfrac>\u0000 <mrow>\u0000 <msup>\u0000 <mrow>\u0000 <mi>G</mi>\u0000 </mrow>\u0000 <mrow>\u0000 <mo>′</mo>\u0000 </mrow>\u0000 </msup>\u0000 </mrow>\u0000 <mrow>\u0000 <mi>k</mi>\u0000 <msup>\u0000 <mrow>\u0000 <mi>G</mi>\u0000 </mrow>\u0000 <mrow>\u0000 <mo>′</mo>\u0000 </mrow>\u0000 </msup>\u0000 <mo>+</mo>\u0000 <mi>G</mi>\u0000 <mo>+</mo>\u0000 <mi>r</mi>\u0000 </mrow>\u0000 </mfrac>\u0000 </mrow>\u0000 </mfenced></math>-expansion approach to solve the \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformed equation for specific parameter values. This method generates solutions that provide valuable insights into the system's dynamics and behavior. To verify the accuracy of our solutions, we also apply the finite difference technique to obtain numerical solutions to the \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformed equation. This dual approach ensures the reliability of our results. We present our findings using tables and graphics to enhance clarity and facilitate comparison between the analytical and numerical solutions. These visual aids help readers better understand the similarities and differences between the two approaches. The \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformation is significant as it models physical systems with nonstandard symmetry features, like extensivity, offering a more accurate representation of real-world phenomena. The growing significance of this equation across various disciplines highlights its potential in advancing our understanding of complex physical systems. This paper contributes valuable knowledge about the \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformed equation, demonstrating its potential for accurately modeling physical systems with violated symmetries. Through both analytical and numerical techniques, we offer comprehensive solutions and validate their accuracy, with graphical representations enhancing the clarity and understanding of our results. This exploration of \u0000<span></span><math>\u0000 <mi>q</mi></math>-deformation advances modeling techniques, p","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 5","pages":"3039-3061"},"PeriodicalIF":1.8,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142181753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}