2013 IEEE International Reliability Physics Symposium (IRPS)最新文献_第8页

The physical insights into an abnormal erratic behavior in the resistance random access memory 将物理洞察转化为不正常的不稳定行为，在存储器中抵抗随机存取

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532094

Y. J. Huang, S. Chung, H. Y. Lee, Y. S. Chen, F. Chen, P. Gu, M. Tsai

引用次数: 6

Investigation of self-heating induced hot-carrier-injection stress behavior in high-voltage power devices 高压电力器件自热诱导热载流子注入应力行为研究

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532038

Y.-H. Huang, L. Leu, C. C. Liu, Y. Lee, J. Wang, A. Mehta, K. Wu, Hui-Ting Lu, P. Su, Jui-Ping Chiang, H. Chou, Y. Jong, H. Tuan

{"title":"Investigation of self-heating induced hot-carrier-injection stress behavior in high-voltage power devices","authors":"Y.-H. Huang, L. Leu, C. C. Liu, Y. Lee, J. Wang, A. Mehta, K. Wu, Hui-Ting Lu, P. Su, Jui-Ping Chiang, H. Chou, Y. Jong, H. Tuan","doi":"10.1109/IRPS.2013.6532038","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532038","url":null,"abstract":"In this paper, we investigate hot carrier injection (HCI) stress induced self-heating behavior for high-voltage n-type Lateral-Diffused-MOSFET (NLDMOS) multi-finger devices. A NMOS device with more poly fingers, for the first time, is found to suffer more threshold voltage drift (ΔVt) but less linear current drift (ΔIdlin) under HCI stress at high gate and drain voltages. The experiment of monitoring device temperature is carried out and TCAD simulations are performed to investigate the physical mechanisms. The effect of poly gate finger numbers (PGFN) is attributed to higher lattice temperature with more PGFN, resulting in higher electrical field in the channel region and lower electrical field in the drift region. HCI behavior in ΔVt and ΔIdlin for different PGFN devices at various ambient temperatures are verified by TCAD simulation. In addition, the effect of PGFN on AC HCI stress and DC HCI Safe-Operation-Area (SOA) are studied. All the experimental findings can be well explained by the effect of self-heating during HCI stress mode.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127632755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation 基于电路仿真中NBTI和热载子效应的p- mosfet退化的紧凑可靠性模型

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531943

C. Ma, H. Mattausch, M. Miyake, T. Iizuka, M. Miura-Mattausch, K. Matsuzawa, S. Yamaguchi, T. Hoshida, M. Imade, R. Koh, T. Arakawa, J. He

{"title":"Compact reliability model for degradation of advanced p-MOSFETs due to NBTI and hot-carrier effects in the circuit simulation","authors":"C. Ma, H. Mattausch, M. Miyake, T. Iizuka, M. Miura-Mattausch, K. Matsuzawa, S. Yamaguchi, T. Hoshida, M. Imade, R. Koh, T. Arakawa, J. He","doi":"10.1109/IRPS.2013.6531943","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531943","url":null,"abstract":"A compact reliability model is reported, which includes both the channel hot carrier (CHC) and the negative bias thermal instability (NBTI) effects in p-MOSFETs. The developed compact NBTI model, which describes both interface-state generation and hole-trapping mechanisms, is further improved by considering additionally the impact of the drain bias Vds. With increased Vds, the NBTI effect is weakened due to the reduction of the vertical gate oxide field, and the CHC effect is enhanced by the increased lateral channel electric field. Therefore, the threshold voltage is observed to decrease in the low Vds regime, and then increases again in the high Vds regime. Such “turn-around” characteristic is correctly modeled using the improved compact NBTI model. Implementation of this reliability model into the surface-potential-based compact model HiSIM enables accurate prediction of the CHC enhanced NBTI degradation for wide ranges of time duration and bias conditions. This allows real-time simulation for the circuit-performance degradation occurring during actual circuit operation.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128147134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 30

Acceleration factor determination for potential-induced degradation in crystalline silicon PV modules 晶体硅光伏组件中电位诱导降解的加速因子测定

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532009

P. Hacke, R. Smith, K. Terwilliger, S. Glick, D. Jordan, S. Johnston, M. Kempe, S. Kurtz

{"title":"Acceleration factor determination for potential-induced degradation in crystalline silicon PV modules","authors":"P. Hacke, R. Smith, K. Terwilliger, S. Glick, D. Jordan, S. Johnston, M. Kempe, S. Kurtz","doi":"10.1109/IRPS.2013.6532009","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532009","url":null,"abstract":"Potential-induced degradation in conventional p-type silicon-based photovoltaic solar cell modules is described as a failure mechanism involving positive ion migration, understood to be primarily Na+, drifting from the glass to the cells in negative-voltage arrays. Acceleration factors for this mechanism are determined for silicon photovoltaic modules by comparing the module power during degradation outdoors to that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at the constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. Estimation of module power in-situ in the environmental chamber is achieved using dark I-V measurements transformed by superposition. By this means, the power of the degrading module can be semi-continuously determined so that statistical data for multiple modules undergoing potential-induced degradation can be easily and accurately obtained.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121836633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Chip EOS issue analysis in board-level application 芯片EOS在板级应用中的问题分析

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532081

Hu Wenke, Guo Fujun

引用次数: 1

An array-based circuit for characterizing latent Plasma-Induced Damage 一种用于表征潜在等离子体损伤的阵列电路

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532005

W. Choi, P. Jain, C. Kim

引用次数: 11

Electrical performances of SiO2-doped GeTe for phase-change memory applications 相变存储器中sio2掺杂GeTe的电学性能

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532100

G. Navarro, A. Persico, E. Henaff, F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, E. Vianello, B. D. Salvo

引用次数: 10

Resolving discrete emission events: A new perspective for detrapping investigation in NAND Flash memories 解决离散发射事件:NAND快闪记忆体去俘获研究的新视角

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531977

C. Miccoli, J. Barber, C. M. Compagnoni, G. M. Paolucci, J. Kessenich, A. Lacaita, A. Spinelli, R. Koval, A. Goda

引用次数: 20

Reliability of graphene interconnects and n-type doping of carbon nanotube transistors 石墨烯互连的可靠性与碳纳米管晶体管的n型掺杂

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532045

L. Liyanage, Xiangyu Chen, Hai Wei, Hong-Yu Chen, S. Mitra, H. Wong

引用次数: 2

Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology 28纳米技术mn掺杂Cu互连的电迁移可靠性

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532080

Linjun Cao, P. Ho, P. Justison

引用次数: 5