一种用于表征潜在等离子体损伤的阵列电路

W. Choi, P. Jain, C. Kim
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引用次数: 11

摘要

为了有效地收集大量的等离子体击穿统计数据,提出了一种基于阵列的不同天线结构的等离子体诱导损伤(PID)表征电路。所提出的电路通过与被测器件(dut)数量成比例的因素减少了应力时间和测试面积。在65nm实现的12-24阵列中测量的威布尔统计数据表明,与叉型天线相比,带有板型天线的dut寿命更短,这表明在等离子体灰化过程中PID效应更大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An array-based circuit for characterizing latent Plasma-Induced Damage
An array-based Plasma-Induced Damage (PID) characterization circuit with various antenna structures is proposed for efficient collection of massive PID breakdown statistics. The proposed circuit reduces the stress time and test area by a factor proportional to the number of Devices Under Test (DUTs). Measured Weibull statistics from a 12-24 array implemented in 65nm show that DUTs with plate type antennas have a shorter lifetime compared to their fork type counterparts suggesting greater PID effect during the plasma ashing process.
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