Y. J. Huang, S. Chung, H. Y. Lee, Y. S. Chen, F. Chen, P. Gu, M. Tsai
{"title":"将物理洞察转化为不正常的不稳定行为，在存储器中抵抗随机存取","authors":"Y. J. Huang, S. Chung, H. Y. Lee, Y. S. Chen, F. Chen, P. Gu, M. Tsai","doi":"10.1109/IRPS.2013.6532094","DOIUrl":null,"url":null,"abstract":"The voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"The physical insights into an abnormal erratic behavior in the resistance random access memory\",\"authors\":\"Y. J. Huang, S. Chung, H. Y. Lee, Y. S. Chen, F. Chen, P. Gu, M. Tsai\",\"doi\":\"10.1109/IRPS.2013.6532094\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532094\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The physical insights into an abnormal erratic behavior in the resistance random access memory
The voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.
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