Electrical performances of SiO2-doped GeTe for phase-change memory applications

Abstract

We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.