相变存储器中sio2掺杂GeTe的电学性能

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532100

G. Navarro, A. Persico, E. Henaff, F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, E. Vianello, B. D. Salvo

{"title":"相变存储器中sio2掺杂GeTe的电学性能","authors":"G. Navarro, A. Persico, E. Henaff, F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, E. Vianello, B. D. Salvo","doi":"10.1109/IRPS.2013.6532100","DOIUrl":null,"url":null,"abstract":"We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Electrical performances of SiO2-doped GeTe for phase-change memory applications\",\"authors\":\"G. Navarro, A. Persico, E. Henaff, F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, E. Vianello, B. D. Salvo\",\"doi\":\"10.1109/IRPS.2013.6532100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文首次研究了二氧化硅掺杂对基于gete的相变存储器(PCM)技术的影响。我们证明了通过掺杂二氧化硅提高电池的热效率和电效率，RESET功率降低了50%。此外，我们还展示了在高温下设计电池阈值电压(VTH)的可能性，这要归功于SiO2掺杂到GeTe中引起的结晶动力学的改变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrical performances of SiO2-doped GeTe for phase-change memory applications

We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量