发布求助
文献互助 智能选刊 最新文献

2013 IEEE International Reliability Physics Symposium (IRPS)最新文献

筛选
英文 中文
Impact of parasitic bipolar action and soft-error trend in bulk CMOS at terrestrial environment 寄生双极效应的影响及软误差趋势
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532054
T. Uemura, T. Kato, H. Matsuyama
{"title":"Impact of parasitic bipolar action and soft-error trend in bulk CMOS at terrestrial environment","authors":"T. Uemura, T. Kato, H. Matsuyama","doi":"10.1109/IRPS.2013.6532054","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532054","url":null,"abstract":"We investigate an impact of parasitic bipolar action on 28nm sequential elements in the terrestrial environment through spallation neutron beam irradiation tests. We discuss the contribution of parasitic bipolar action to the technology trend of SER through neutron tests on Flip-Flops and SRAMs.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129958708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Reliability monitoring for highly leaky devices 高漏电设备的可靠性监测
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531960
J. Ryan, J. Campbell, K. Cheung, J. Suehle, R. Southwick, A. Oates
{"title":"Reliability monitoring for highly leaky devices","authors":"J. Ryan, J. Campbell, K. Cheung, J. Suehle, R. Southwick, A. Oates","doi":"10.1109/IRPS.2013.6531960","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531960","url":null,"abstract":"We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals despite excessively high gate leakage current backgrounds. We demonstrate the utility of FMCP as a reliability monitoring tool in highly scaled and highly leaky devices.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130388368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Making reliable memories in an unreliable world (invited) 在一个不可靠的世界里创造可靠的记忆(邀请)
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531976
R. Joshi, R. Kanj, C. Adams, J. Warnock
{"title":"Making reliable memories in an unreliable world (invited)","authors":"R. Joshi, R. Kanj, C. Adams, J. Warnock","doi":"10.1109/IRPS.2013.6531976","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531976","url":null,"abstract":"Reliability is a key concern for VLSI circuits especially so for latches and memories due to their small feature sizes. Particularly, for SRAM cell designs Bias Temperature Instability effects have significant implications on functionality and performance. Here we propose through simulation and modeling an efficient statistical methodology to evaluate and minimize the aging of memory chips. Redundancy has been typically used to resolve failing parts at beginning-of-life. In this approach, we propose to use redundancy to repair critical parts that are most susceptible to aging, thereby optimizing end-of-life yield. Our methodology enables what would have been a very expensive and exhaustive hardware testing approach by identifying optimal repair corners via fast statistical simulations. The methodology takes into consideration reliability effects in the presence of random process variation. This in turn identifies critical repair parts for optimal yield and helps minimize the ever increasing field failure problem.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"127 38","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114088103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Statistical outlier screening for latent defects 潜在缺陷的统计异常筛选
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531962
J. Tikkanen, N. Sumikawa, L. Wang, L. Winemberg, M. Abadir
{"title":"Statistical outlier screening for latent defects","authors":"J. Tikkanen, N. Sumikawa, L. Wang, L. Winemberg, M. Abadir","doi":"10.1109/IRPS.2013.6531962","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531962","url":null,"abstract":"This study analyzes parametric wafer probe test measurements from high quality SoCs for automotive market. This product is a safety critical part that must have a near zero Defective Parts per Million (DPPM) rate. In order to achieve the required quality standard, a comprehensive parametric test set is performed on each part. In very rare occasions, a part with latent defect is identified. The latency of the defect is established through failure analysis after the part is deemed failing. In this paper, we study the possibility of screening such latent defective parts during wafer sort based on its early signature shown on parametric wafer tests. In earlier works, it is shown that multivariate outlier analysis can be used for capturing the rare defective parts (or returns) for a high quality product line [1]. Using parametric wafer probe test measurements, multivariate outlier models are created and applied to preemptively predict potential returns. This paper analyzes three particular returns, starting from its failure analysis report to suggesting a statistical outlier methodology to screen this part. In this full paper, multiple returns with latent defects will be analyzed.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123484609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Identification of pulse quenching enhanced layouts with subbandgap laser-induced single-event effects 具有亚带隙激光诱导单事件效应的脉冲淬火增强布局的识别
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532052
J. Ahlbin, N. Hooten, M. Gadlage, J. Warner, S. Buchner, Dale McMorrow, Lloyd W. Massengill
{"title":"Identification of pulse quenching enhanced layouts with subbandgap laser-induced single-event effects","authors":"J. Ahlbin, N. Hooten, M. Gadlage, J. Warner, S. Buchner, Dale McMorrow, Lloyd W. Massengill","doi":"10.1109/IRPS.2013.6532052","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532052","url":null,"abstract":"Pulsed-laser single-event effects experiments on a 65 nm bulk CMOS integrated circuit confirms the existence of single-event pulse quenching and supports previous heavy-ion results. Strikes on pMOS transistors adjacent to each other are most susceptible to pulse quenching, with the pulsed-laser results emphasizing the proclivity of common n-well designs to pulse quenching. Correlation of the laser data with heavy-ion data shows that pulse quenching can occur below an LET of 9 MeV-cm2/mg.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126581082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Modeling of radiation-induced single event transients in SOI FinFETS SOI finfet中辐射诱导单事件瞬态的建模
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532108
L. Artola, G. Hubert, peixiong zhao
{"title":"Modeling of radiation-induced single event transients in SOI FinFETS","authors":"L. Artola, G. Hubert, peixiong zhao","doi":"10.1109/IRPS.2013.6532108","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532108","url":null,"abstract":"This work presents the transient charge collection induced by energetic particles in sub-100 nm SOI FinFET technologies with the aim of estimating the SEU (Single Event Upset) and MBU (Multiple Event Upset) sensitivities. The estimates are performed with the dynamic charge transport and collection model of the MUSCA SEP3 platform and compared to TCAD simulations. The predictive platform works with a multi-scales modeling and physics-based Monte-Carlo approach and provides the device sensitivity but also investigates evolving technologies and emerging SEE mechanisms.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127542258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 40
Soft errors induced by natural radiation at ground level in floating gate flash memories 浮栅快闪存储器中地面自然辐射引起的软误差
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6531992
G. Just, J. Autran, S. Serre, D. Munteanu, S. Sauze, A. Régnier, J. Ogier, P. Roche, G. Gasiot
{"title":"Soft errors induced by natural radiation at ground level in floating gate flash memories","authors":"G. Just, J. Autran, S. Serre, D. Munteanu, S. Sauze, A. Régnier, J. Ogier, P. Roche, G. Gasiot","doi":"10.1109/IRPS.2013.6531992","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6531992","url":null,"abstract":"This work reports the combined characterization at mountain altitude (on the ASTEP Platform at 2552 m) and at sea-level of more than ~50 Gbit of 90 nm NOR flash memories subjected to natural radiation (atmospheric neutrons). This wafer-level experiment evidences a limited impact of the terrestrial radiation at ground level on the memory SER evaluated without ECC. Experimental values are compared to estimations obtained from Monte Carlo simulation using the TIARA-G4 code combined with a physical model for charge loss in such floating-gate devices.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122425602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Drain stress influence on read disturb defectivity 漏应力对读干扰缺陷的影响
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532103
M. De Tomasi, R. E. Vaion, L. Cola, P. Zabberoni, A. Mervic
{"title":"Drain stress influence on read disturb defectivity","authors":"M. De Tomasi, R. E. Vaion, L. Cola, P. Zabberoni, A. Mervic","doi":"10.1109/IRPS.2013.6532103","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532103","url":null,"abstract":"Introduction of Error Correction Code (ECC) on new flash memory has changed the dominant failure mode: single defective bits are corrected, intrinsic behavior affects reliability performance. In this paper we focused on the relationship between traps generated by Drain Stress during program operation and soft program induced by continuous reading. Particular focus has been given on new approach to improve reliability performance.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116986269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Determination of Cu-line EM Lifetime Criteria Using Physically Based TCAD simulations 使用基于物理的TCAD模拟确定cu线EM寿命标准
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532079
Mankoo Lee, D. Pramanik, Y. Oh, Z. Qin, I. Avci, S. Simeonov, K. El Sayed, P. Balasingam
{"title":"Determination of Cu-line EM Lifetime Criteria Using Physically Based TCAD simulations","authors":"Mankoo Lee, D. Pramanik, Y. Oh, Z. Qin, I. Avci, S. Simeonov, K. El Sayed, P. Balasingam","doi":"10.1109/IRPS.2013.6532079","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532079","url":null,"abstract":"A physically based simulation methodology provides fast and practical EM lifetime prediction. We identified an “EM-aware” region to define the length dependence of Cu-lines under high current stress. For eventual calibration of 2× nm node Cu-lines, we analyzed the sensitivity trends of vacancy and void profiles as well as the mass transport mechanisms using a 3D TCAD tool. This includes electron flow dependency to explain line and via depletion effects for void formations under various EM stress conditions. We report a non-linearity in the length dependence on the EM failure jL product at ~9000 A/cm and a slight temperature dependence on the Blech Threshold (jL)c at ~2000 A/cm extracted at 300°C in the EM aware region.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114109595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Aging sensors for workload centric guardbanding in dynamic voltage scaling applications 动态电压缩放应用中以工作负载为中心的保带老化传感器
2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI: 10.1109/IRPS.2013.6532004
Min Chen, H. Kufluoglu, J. Carulli, V. Reddy
{"title":"Aging sensors for workload centric guardbanding in dynamic voltage scaling applications","authors":"Min Chen, H. Kufluoglu, J. Carulli, V. Reddy","doi":"10.1109/IRPS.2013.6532004","DOIUrl":"https://doi.org/10.1109/IRPS.2013.6532004","url":null,"abstract":"BTI induced aging degradation threatens circuit reliability through circuit performance degradation. This degradation is strongly workload dependent and can result in unbalanced signal edge degradation as asymmetric aging. Three ring oscillator based asymmetric aging sensitive sensors are demonstrated in a 28nm low power/poly SiON CMOS technology. These sensors are shown to be capable of providing an adequate circuit guard band to account for signal edge degradation due to NBTI. A novel DVS workload centric monitor embedded with asymmetric aging sensitive sensors is proposed for aging and power trade-off assessment. The measured data indicates that signal edge degradation has a linear dependency on workload ratio. The impact of the dynamic voltage scaling workload profile on aging and power is experimentally studied with this aging monitor and allows the assessment assists to the modeling of aging margin relaxation.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114869657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信