漏应力对读干扰缺陷的影响

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532103

M. De Tomasi, R. E. Vaion, L. Cola, P. Zabberoni, A. Mervic

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引用次数: 1

摘要

在新型快闪记忆体上引入纠错码(Error Correction Code, ECC)，改变了主要的故障模式:单个缺陷位被纠正，内在行为影响可靠性性能。本文主要研究了程序运行过程中排水应力产生的陷阱与连续读取引起的软程序之间的关系。特别关注的是提高可靠性性能的新方法。

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Drain stress influence on read disturb defectivity

Introduction of Error Correction Code (ECC) on new flash memory has changed the dominant failure mode: single defective bits are corrected, intrinsic behavior affects reliability performance. In this paper we focused on the relationship between traps generated by Drain Stress during program operation and soft program induced by continuous reading. Particular focus has been given on new approach to improve reliability performance.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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