{"title":"Temperature Effect on the Radioluminescence of Differently Doped Silica-Based Optical Fibers","authors":"Nourdine Kerboub;Diego Di Francesca;Adriana Morana;Hicham El Hamzaoui;Youcef Ouerdane;Géraud Bouwmans;Rémi Habert;Andy Cassez;Aziz Boukenter;Bruno Capoen;Emmanuel Marin;Mohamed Bouazaoui;Daniel Ricci;Ruben Garcia Alia;Julien Mekki;Olivier Gilard;Nicolas Balcon;Sylvain Girard","doi":"10.1109/TNS.2024.3437753","DOIUrl":"10.1109/TNS.2024.3437753","url":null,"abstract":"We evaluate the temperature effect on the X-ray radiation-induced luminescence (RIL) of differently doped silica fibers obtained via the sol-gel route. Previous investigations showed that these optical materials exhibit interesting dosimetry properties, such as very good detection capabilities and linear response over a large range of dose rate. However, several radiation environments, such as space and particle accelerators, also require a careful assessment of the temperature effect on these properties exploited for dosimetry. With this aim, we characterize their RIL efficiency and spectral dependence at several irradiation temperatures. We demonstrate that all the investigated materials present a nonnegligible temperature dependence of the RIL in the range from -120 °C to 80 °C. The temperature effect on the RIL signal is still compensable via calibration and temperature monitoring.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nicholas St. John;Soumyajit Mandal;Edwin Villalpando;Piotr Maj;Grzegorz W. Deptuch
{"title":"Testing of a Line Driver With Configurable Pre-Emphasis on Lossy Transmission Lines","authors":"Nicholas St. John;Soumyajit Mandal;Edwin Villalpando;Piotr Maj;Grzegorz W. Deptuch","doi":"10.1109/TNS.2024.3430845","DOIUrl":"10.1109/TNS.2024.3430845","url":null,"abstract":"Rare-event physics experiments such as the Deep Underground Neutrino Experiment (DUNE) or the next Enriched Xenon Observatory (nEXO) experiment search for rare, low-energy events, detected by sensitive detectors immersed in a cryogenic noble liquid (e.g., liquid argon or xenon). Readout electronics used within such detectors must consume minimal power while operating reliably in cryogenic environments. Furthermore, in the case of nEXO, maximizing the radiopurity of the environment is vital to minimize background noise, thus placing strict limits on the volume of dielectric materials, leading to high-loss data cables spanning distances up to 12 m. Such cables cause high attenuation and intersymbol interference (ISI), resulting in a high bit-error rate (BER). These issues were addressed by developing an integrated line driver with configurable pre-emphasis in a 65-nm CMOS process. The pre-emphasis parameters can be programmed to minimize BER for specific cables and data rates under power constraints. The driver was tested at both room and cryogenic temperatures. In both cases, the output BER was found to be strongly correlated with the pre-emphasis settings. Furthermore, analysis and simulation showed that adapting the pre-emphasis settings based on the incoming bit sequence can further improve performance with minimal changes to the current solution.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Klekotko;S. Biereigel;M. Baszczyk;P. Moreira;F. Martina;J. Prinzie;S. Kulis
{"title":"A Radiation-Tolerant 25.6-Gb/s High-Speed Transmitter in 28-nm CMOS With a Tolerance of 1 Grad","authors":"A. Klekotko;S. Biereigel;M. Baszczyk;P. Moreira;F. Martina;J. Prinzie;S. Kulis","doi":"10.1109/TNS.2024.3440010","DOIUrl":"10.1109/TNS.2024.3440010","url":null,"abstract":"This article presents a 25.6-Gbit\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000s−1 high-speed transmitter (HST) manufactured using 28-nm CMOS technology. The HST macroblock includes an all-digital phase-locked loop (ADPLL), duty cycle corrector (DCC) circuit, data pattern generator, serializer, and a driver capable of driving the differential 100-\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000 line as well as a silicon photonics (SiPh) ring modulator (RM). The design adopts various radiation hardening techniques, such as triple modular redundancy (TMR), physical circuit spacing, and protection against radiation-induced leakage. The circuit achieves a total ionizing dose (TID) tolerance above 1 Grad, which aligns with the future large hadron collider (LHC) detector upgrade requirements. In this article, the architecture of the HST based on the LC-tank-based ADPLL, half-rate serializer, and the source-series-terminated (SST) output driver included in the prototype chip is described. The experimental results are reported, including general evaluation as well as the radiation characterization of the HST.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10630535","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jin Lin;Hongze Zhang;Zhi Zhang;Yingchao Du;Chuanxiang Tang
{"title":"Simulation Study on Pinhole Imaging of ²³⁹Pu Using Nuclear Resonance Fluorescence With Laser Compton Scattering Gamma Rays","authors":"Jin Lin;Hongze Zhang;Zhi Zhang;Yingchao Du;Chuanxiang Tang","doi":"10.1109/TNS.2024.3439624","DOIUrl":"10.1109/TNS.2024.3439624","url":null,"abstract":"Nuclear resonance fluorescence (NRF) has significant potential in the identification and measurement of isotopes due to its specificity for different nuclei. This study explored the NRF pinhole imaging method through Monte Carlo simulation in the detection of 239Pu samples. By designing and optimizing parameters of the pinhole imaging system, including the direction of incident photons, geometric aperture, acceptance angle, pinhole thickness, object distance, and magnification factor, a spatial resolution of 1.2 cm with a signal-to-noise ratio (SNR) of 1.63 has been achieved. Monochromatic incident photons were used in the simulation to improve data statistics and reduce computation time. Although there are no suitable monochromatic photon beams, quasi-monochromatic gamma rays generated by laser Compton scattering (LCS) sources would be available for NRF applications. Simulation with a quasi-monochromatic incident photon beam suggested that off-resonance photons contributed little to the final results after energy filtering. Simulation results demonstrate the potential of NRF pinhole imaging to distinguish isotope samples, such as 239Pu, with different concentrations and sizes and obtain direct imaging results without the need for further data processing. However, challenges, such as high-energy noise photons and low count rate of NRF photons, limit the image quality. To compensate these errors and enhance the accuracy of NRF pinhole imaging, imaging correction algorithms can be developed for further improvements.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. D’Adda;C. Riboldi;A. Saporito;G. Borghi;M. Carminati;C. Fiorini
{"title":"SITH: An SiPM Readout ASIC for Prompt Gamma-Ray Detection in Hadrontherapy Applications","authors":"I. D’Adda;C. Riboldi;A. Saporito;G. Borghi;M. Carminati;C. Fiorini","doi":"10.1109/TNS.2024.3439598","DOIUrl":"10.1109/TNS.2024.3439598","url":null,"abstract":"We present the design and experimental characterization of spectroscopy imaging timing hadrontherapy (SITH) ASIC, a custom-designed integrated circuit (IC) 16-channel ASIC for the readout of arrays of silicon photomultipliers (SiPMs) coupled to pixelated scintillators. This IC measures both the energy and time-of-arrival (ToA) of the detected gamma photons, and it is tailored for the specific application of prompt gamma imaging (PGI) for particle range verification in hadrontherapy treatments. The SITH ASIC features a low input impedance (\u0000<inline-formula> <tex-math>$lt 10~Omega $ </tex-math></inline-formula>\u0000), an input dynamic range close to 80 dB with a full-scale range of 5nC, multiple triggering logic (internal/external), power dissipation of 14 mW/ch, and the flexibility for being used with both pixelated and monolithic scintillation crystals. Moreover, the input stage of each channel can process high input currents (in the tens of milliampere range) and can be coupled to large-area photodetectors (up to tens of nanofarad). The coincidence resolving time (CRT) of annihilation events measured with \u0000<inline-formula> <tex-math>$3times 3$ </tex-math></inline-formula>\u0000 mm2 SiPMs coupled with \u0000<inline-formula> <tex-math>$3times 3times 5$ </tex-math></inline-formula>\u0000 mm3 LYSO scintillators is close to 200-ps FWHM. The reported experimental measurements were conducted with a 16-channel prototype of a prompt gamma-ray detection module, which provides a real-time measurement of the gamma-ray hit position, energy, and ToA through 16 time-to-digital converters (TDCs) implemented in FPGA. The maximum count rate per channel is approximately 3 Mc/s.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10623878","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Step-Down Converter With Stacked Core Transistors for the Innermost Layers of High-Luminosity High-Energy Physics Experiments","authors":"J. Kampkötter;M. Karagounis;A. Grabmaier","doi":"10.1109/TNS.2024.3438615","DOIUrl":"10.1109/TNS.2024.3438615","url":null,"abstract":"This article presents a dc/dc converter that is built with stacked transistors in the power stage and is designed to operate at very high switching frequencies of 100 MHz. The converter can be powered with input voltages of 4.8 V and is capable of powering readout electronics with a voltage conversion factor of 4 in close proximity to the LHC beamline. The high switching frequency enables the use of small inductances of only 22 nH while delivering a maximum load current of 1 A. In addition, this article outlines linear regulators featuring stacked pass devices, designed for operation at supply voltages of up to 5.5 V. Notably, both circuits use thin gate-oxide transistors to mitigate the impact of total ionizing dose (TID). While thin gate-oxide transistors are typically used in applications with low supply voltages, transistor stacking is implemented to enable operation at higher input voltages. TID tolerance of up to 1 Grad(SiO2) has been demonstrated for the dc/dc converter and 610 Mrad(SiO2) for the linear regulators with stacked pass devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tatiana Nathaly Espinoza;David Walter;Kurtis D. Bartlett;Caleb Roecker;Richard Schirato;Andrew Hoover;Brian A. Larsen;Yongqiang Wang;Matthew R. Chancey;Adam A. Hecht
{"title":"Proton Quenching in Rare-Earth Inorganic Scintillators: GAGG:Ce and YSO:Ce","authors":"Tatiana Nathaly Espinoza;David Walter;Kurtis D. Bartlett;Caleb Roecker;Richard Schirato;Andrew Hoover;Brian A. Larsen;Yongqiang Wang;Matthew R. Chancey;Adam A. Hecht","doi":"10.1109/TNS.2024.3434380","DOIUrl":"10.1109/TNS.2024.3434380","url":null,"abstract":"Scintillator detectors are an integral component of radiation detection systems for a variety of applications such as medical imaging, accelerator diagnostics, and space science. Typically, a scintillator detector’s response is characterized using gamma sources to understand the detection response to different types of radiation, including charged particle detection. However, there exists a nonlinearity of the amount of light produced from an incident gamma ray of specific energy and the light produced from an incident charged particle of the same energy. This important effect, known as quenching, must be accounted for to interpret energies from charged particles incident on detectors. In this article, we present results of quenching parameterization for two types of cerium-doped inorganic scintillators, Y2SiO5:Ce (YSO:Ce) and Gd3Al2Ga3O12:Ce (GAGG:Ce). We measured the light output from incident proton energies from 1 to 25 MeV using a 3-MV tandem accelerator and two reactions: Au(p,p)Au and 3He(d,p)⁴He. Using gamma-ray sources to calibrate the detectors, we compared the measured electron-equivalent energy versus the incident energy expected. Using an adaptation of the Birks semi-empirical formula, we extracted the Birks parameter (kB) to understand quenching. For one of the GAGG:Ce samples, the kB parameter of 0.0072 [g cm-2 MeV-1] is comparable to a similar study where the value of kB was 0.0065 [g cm-2 MeV-1]. For YSO:Ce, no other kB values were found in the literature. Three different types of GAGG:Ce were used to collect measurements of kB as a function of dopant concentration.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10621705","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141884996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James
{"title":"Electrophysical Properties of Cd₀.₉₆Mn₀.₀₄Te₀.₉₆Se₀.₀₄ Surface-Barrier Diodes","authors":"V. Sklyarchuk;O. Kopach;P. Fochuk;A. E. Bolotnikov;R. B. James","doi":"10.1109/TNS.2024.3436525","DOIUrl":"10.1109/TNS.2024.3436525","url":null,"abstract":"Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to \u0000<inline-formula> <tex-math>$rho ~approx ~400~Omega cdot text {cm}$ </tex-math></inline-formula>\u0000 and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity \u0000<inline-formula> <tex-math>$rho =rho (T)$ </tex-math></inline-formula>\u0000 was equal to \u0000<inline-formula> <tex-math>$Delta E approx 0.24$ </tex-math></inline-formula>\u0000 eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to \u0000<inline-formula> <tex-math>$E_{g} =1.495$ </tex-math></inline-formula>\u0000 eV.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. N. Gomes;R. García Cozzi;M. Garcia-Inza;S. Carbonetto;M. V. Cassani;E. Redin;A. Faigón;L. Sambuco Salomone
{"title":"Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing","authors":"E. N. Gomes;R. García Cozzi;M. Garcia-Inza;S. Carbonetto;M. V. Cassani;E. Redin;A. Faigón;L. Sambuco Salomone","doi":"10.1109/TNS.2024.3436597","DOIUrl":"10.1109/TNS.2024.3436597","url":null,"abstract":"The response of n-channel field-oxide field-effect transistors (FOXFETs) exposed to ionizing radiation and annealing is reproduced using a physics-based numerical model that includes the microscopic processes leading to hole capture/ neutralization and generation of interface traps. The results show that a distribution for the proton emission rate has to be considered to reproduce the threshold voltage evolution with dose, and density of interface traps trends at both short and long post-irradiation annealing times if direct release is considered as the mechanism responsible for proton production. This result may suggest a failure of the usual simple drift-diffusion model for proton transport across SiO2 in total dose models, or a limitation of our model based on some processes that were neglected in the first approach, such as hydrogen cracking as a secondary mechanism for proton production.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Novel Modular Cascaded H-Bridge High-Power Accelerator Dipole Magnet Pulse Power Supply for HIRFL-CSRm","authors":"Cheng Han;Lijun Mao;Fengjun Wu;Yuzhen Huang;Yuan Li;Wanzeng Shen;Mengyan Sun;Xiaojun Wang;Yulian Tan;Daqing Gao;Hongbin Yan;Chaohua Zhu;Yonghua Deng","doi":"10.1109/TNS.2024.3436038","DOIUrl":"10.1109/TNS.2024.3436038","url":null,"abstract":"We describe a new modular cascaded H-bridge high power accelerator dipole magnet pulse power supply for the Heavy Ion Research Facility in Lanzhou-Cooler-Storage-Ring main ring (HIRFL-CSRm). The power supply consists of two branches connected in parallel, each of which consists of four 360 V/1800-A power units connected in series. Each power unit uses modular high power density voltage sources in parallel for the ac/dc converter and cascaded H-bridges for the dc/dc converter. In addition, digital control strategies are implemented. The voltage source modules adopt voltage and current dual closed-loop control, and the cascaded H-bridges use current dual closed-loop control with frequency-doubling modulation and cascaded multilevel control. The effectiveness of the proposed topology scheme and control strategies is confirmed through experiments, and the thermal stability of the power supply is verified through 72-h continuous output experiments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}