IEEE Transactions on Nuclear Science最新文献

{"title":"3-D Computed Laminography Based on a Sequential Regularization","authors":"Yuhang Liu;Huazhong Shu;Yi Liu;Pengcheng Zhang;Lei Wang;Pascal Haigron;Zhiguo Gui","doi":"10.1109/TNS.2025.3574888","DOIUrl":"https://doi.org/10.1109/TNS.2025.3574888","url":null,"abstract":"Accurate reconstruction of computed laminography (CL) remains challenging due to incomplete projections causing inter-slice aliasing and blurring. In this article, we propose a novel 3-D CL reconstruction model named simultaneous algebraic reconstruction technique (SART)-sequential regularization (SR), which extends traditional single-term regularization methods into an SR framework specifically designed for anisotropic CL data. Guided by the theory of “visible and invisible boundaries,” this framework decomposes the regularization process into three directional-aware stages: 1) 1-D directional gradient sparsity terms are first applied in the in-slice to enhance reliable edge structures; 2) mild edge-preserving smoothing is applied along the z-direction to reduce aliasing; and 3) a truncated adaptive-weighted total variation (TAwTV) is used for volumetric consistency and streak artifact suppression. To solve the model efficiently, we developed an alternating minimization algorithm based on the split-Bregman (SB) method and gradient descent. The results on simulated multilayer printed circuit board (MPCB) and flange plate phantoms demonstrate that SART-SR notably outperforms competing iterative methods, including SART, in preserving edges, suppressing inter-slice aliasing, and reducing noise. The code is publicly available at <uri>https://github.com/YuhangLiu98/SART-SR</uri>","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2110-2121"},"PeriodicalIF":1.9,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CAMIS: A Cylindrical Active Mask Imaging System","authors":"C. Lamb;J. A. Hanks;J. Ellin;D. Hellfeld;R. J. Cooper;B. J. Quiter;K. Vetter","doi":"10.1109/TNS.2025.3575007","DOIUrl":"https://doi.org/10.1109/TNS.2025.3575007","url":null,"abstract":"Detecting and locating radiological and nuclear materials at distances of 10 m or more in urban and cluttered environments continues to pose challenges in nuclear security and proliferation detection. Previous approaches have focused on large-area radiation imaging using planar configurations of detectors and passive masks. However, these approaches suffer from limitations such as limited field-of-view (FOV) and reduced detection efficiency due to absorption in the mask. To address these limitations, we have developed the cylindrical active mask imaging system (CAMIS). This system comprises 128 NaI(Tl) (10 cm)3 detectors. These detectors are arranged in a cylindrical configuration, enabling gamma-ray imaging with a full 360° azimuthal FOV. The active mask elements within the system are arranged in a pseudorandom configuration, providing unique encoding for all incident directions within the FOV. CAMIS offers an effective detection area of approximately 1 m2 across the entire 360° FOV in the horizontal plane, achieving a mean angular resolution of 10.9° in the azimuthal direction and 12.9° in the polar direction measured by taking the full-width at half-maximum (FWHM) of a cross-section at the maximum reconstructed intensity.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2238-2244"},"PeriodicalIF":1.9,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11018123","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement on Analysis Method for X-Ray Arrival Spectrum From High-Altitude Nuclear Detonation","authors":"Yanbin Wang;Wei Liu;Xiaoqiang Li;Linhe Du;Dinghan Zhu;Yunfei Zhu;Shuang Zhang;Xiong Zhang","doi":"10.1109/TNS.2025.3554347","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554347","url":null,"abstract":"The study of the X-ray arrival spectrum of high-altitude nuclear detonation (HAND) shows that analytical methods offer advantages over Monte Carlo methods in terms of computation speed and the ability to invert the nuclear detonation source term. However, analytical methods have lower accuracy in calculating scattered X-rays in the spectrum arriving at the detector. To address this issue, an analytical method for correcting the X-ray arrival spectrum of HAND is proposed. This study employs a combined blackbody spectrum instead of a single blackbody spectrum to more accurately characterize the spectrum of the X-ray source from a hydrogen bomb detonation. A double-exponential fitting method is used instead of linear interpolation to obtain a more precise mass attenuation coefficient. Correction coefficients derived from Monte Carlo simulations to calibrate the arrival spectrum were corrected by the build-up factor (BUF). In the 2–130-keV energy range, the maximum relative errors between the Monte Carlo arrival spectrum and both the uncorrected for scattering and BUF-corrected arrival spectra are 84.9% and 100.2%, respectively. The proposed method reduces relative errors to within 15%, with a minimum error of less than 0.001%. In addition, its computation time is only 1/39600 of that of the Monte Carlo method. The proposed method provides a solid basis for designing, calibrating space-borne X-ray detectors and inverting the nuclear detonation yield.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1706-1717"},"PeriodicalIF":1.9,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10943253","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET","authors":"Manyi Ji;Na Ren;Yanjun Li;Zhengjia Chen;Hongyi Xu;Kuang Sheng;Xin Wan;Hu Jin;Jun Xu","doi":"10.1109/TNS.2025.3555307","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555307","url":null,"abstract":"Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and simulation. This study verified the strong influence of width and doping concentration of the JFET region of a SiC MOSFET on the sensitivity to heavy-ion-induced gate damage, including LGD and SELC related to gate damage. Failure analysis was conducted to confirm the damage in the gate oxide. Heavy-ion transient technology computer aided design (TCAD) simulations were carried out to confirm the impact of maximum gate oxide electric field during irradiation on gate damage and type of single-event effects (SEEs). This study also provides a feasible way to harden SiC MOSFETs in a radiation environment by reducing the maximum gate oxide electrical field during exposure to heavy ions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1726-1733"},"PeriodicalIF":1.9,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single Event Effect on SiC MOSFETs With Junction Barrier Schottky Diode Structures","authors":"Xinyu Li;Feng He;Xiping Niu;Xintian Zhou;Ling Sang;Yawei He;Yunpeng Jia;Rui Jin","doi":"10.1109/TNS.2025.3554907","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554907","url":null,"abstract":"This article investigates the single event effects (SEEs) in SiC MOSFETs integrated with a junction barrier diode [MOSFET integrated with JBS structure (JMOS)]. During irradiation experiments, JMOS exhibited drain-to-source leakage current degradation and ultimately experienced burnout as the drain voltage increased. However, the gate leakage current remained almost unchanged throughout the irradiation process but increased under the post-irradiation gate stress (PIGS) test. The anatomical analysis demonstrated that the deformation of ohmic contact metal and the generation of gate oxide voids in the active region were the causes of failures. By employing Sentaurus technical computer-aided design (TCAD) simulation tools, hot spots were concentrated at ohmic metal corners when the heavy ions struck in the middle of the JFET region in the junction barrier Schottky diode (JBS) structure. In addition, a remarkable increase in the maximum oxide electric field strength was observed when the injection position was located in the middle of the JFET region, which led to the potential damage of the oxide layer, resulting in the final failure under the PIGS test. Therefore, different from conventional SiC JBS and MOSFET devices, JMOS exhibited a unique failure mechanism arising from the synergistic interaction between both JBS and MOSFET cell structures.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1748-1754"},"PeriodicalIF":1.9,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A High Precision Time Measurement Method Based on Frequency-Domain Phase-Fitting for Nuclear Pulse Detection","authors":"Jianjun Wang;Zhaohui Bu;Zhao Wang;Jincheng Xu;Liguo Zhou;Qibin Zheng","doi":"10.1109/TNS.2025.3554967","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554967","url":null,"abstract":"This article proposes a high-precision time measurement method based on digital frequency-domain phase-fitting (DFPF) by using digitized nuclear pulses. The averaging effect inherent in the frequency-domain cross correlation and phase-fitting processes effectively minimizes measurement errors, thereby ensuring high precision and resolution in time interval measurements. In this article, the theory of this DFPF-based time measurement method is analyzed, and an electronics prototype is designed to validate the feasibility of the proposed method by utilizing analog-to-digital converters (ADCs) for pulse digitization and a field-progammable gate array for phase fitting implementation. The test results indicate that under ideal conditions with a signal-to-noise ratio (SNR) of 64 dB, this method achieves time measurement precisions of 50-, 18-, and 2.9-ps rms, corresponding to different Gaussian pulse widths and sampling rates of 118 ns at 40 MSPS, 10 ns at 100 MSPS, and 3 ns at 500 MSPS, respectively. The precision improves with increasing pulse bandwidth. Furthermore, in practical cosmic ray tests, the method achieved favorable timing performance with a precision of 1.7-ns rms. These results demonstrate that this proposed method has the potential to be a high-precision time measurement for particle detection and is equally applicable to other advanced time measurement scenarios.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1819-1827"},"PeriodicalIF":1.9,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Iterative Reconstruction for Multimodal Neutron Tomography","authors":"Jens Gregor;Matthew R. Heath;Timothy Deller;Matthew A. Blackston;Paul Hausladen","doi":"10.1109/TNS.2025.3554218","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554218","url":null,"abstract":"We describe a unified framework for model-based iterative 3-D reconstruction of multimodal neutron transmission, hydrogen-scatter, and induced-fission images from low resolution data recorded using <inline-formula> <tex-math>$mathrm {14.1~!!text {-}text{MeV} }$ </tex-math></inline-formula> neutrons and the associated-particle imaging (API) technique. The framework, which was developed to facilitate use in challenging field-deployment scenarios, is centered around physics-based system models and a total variation (TV) constrained implementation of the simultaneous iterative reconstruction technique (SIRT). Modified to solve a statistically weighted least squares (WLS) problem, the SIRT algorithm is accelerated using ordered subsets and Nesterov’s momentum for which we derive a near-optimal value of the governing Lipschitz constant. The approach enables the reconstruction of images that are high resolution compared to the acquired data and is robust to both limited statistics and a limited number of projection angles. Moreover, the framework is fast enough to be practical. Example images are provided that demonstrate both the ability to perform fast-neutron imaging of high-atomic-number materials with low radiation dose and the benefit of multimodal neutron imaging to identify key materials.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1686-1697"},"PeriodicalIF":1.9,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Effects of 500 MeV Kr+ Ions on NiO/β-Ga₂O₃ Heterojunction Diodes","authors":"Penghui Zhao;Hao Chen;Leidang Zhou;Teng Ma;Liang Chen;Tao Yang;Zhifeng Lei;Xing Lu;Genshu Zhou;Hui Guo;Xiaoping Ouyang","doi":"10.1109/TNS.2025.3572942","DOIUrl":"https://doi.org/10.1109/TNS.2025.3572942","url":null,"abstract":"This study investigates the in situ radiation effects on NiO/beta-phase gallium oxide (<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3) heterojunction diodes (HJDs) under 500 MeV Kr+ ions’ irradiation, with a fluence of <inline-formula> <tex-math>$1times 10^{8}$ </tex-math></inline-formula> cm−2 at −200 V. The statistical results show that both the forward conductive and reverse blocking characteristics of the HJDs were degraded after the irradiation of Kr+ ions. Associated with the analysis of current-voltage characteristics and the stopping and range of ions in matter (SRIM) simulation results, the performance degradations were attributed to the vacancies induced by Kr+ ions’ radiation in the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 material. On the one hand, the Kr+ radiation-induced vacancies reduced the net carrier concentration of the <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 and increased the generation-recombination current, leading to increased specific<sc>on</small>-resistance and ideality factor of the irradiated HJDs. On the other hand, an oxygen di-vacancies-related trap, set at <inline-formula> <tex-math>$1.07~pm ~0.01$ </tex-math></inline-formula> eV below the conduction band, was involved after Kr+ ions’ radiation, which enhanced the Poole-Frenkel (PF) emission process, dominating the higher leakage current of the irradiated HJDs beyond −300 V. These results provide valuable insights into the radiation damage and performance degradation mechanisms in <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3-based devices for space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2122-2129"},"PeriodicalIF":1.9,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding Inductor-Originated Single-Event Frequency Transients in CMOS LC -Tank Oscillators: Causes, Effects, and System Impacts","authors":"Gideon Adom-Bamfi;Qichao Ma;Stefan Biereigel;Paul Leroux;Jeffrey Prinzie","doi":"10.1109/TNS.2025.3572895","DOIUrl":"https://doi.org/10.1109/TNS.2025.3572895","url":null,"abstract":"Single-event frequency transients (SEFTs) in integrated complementary metal oxide semiconductor (CMOS) LC-tank voltage-controlled oscillator (VCO) and digitally-controlled oscillator (DCO), widely used in frequency synthesizer circuits, have recently been observed and linked to single-event effects (SEEs) in on-chip planar spiral inductors. This work provides an explanation of the underlying causes of these transients, presenting, for the first time, a general model to characterize their behavior and examine their system-level impact. Previously reported experimental observations are validated through heavy-ion microbeam irradiation experiments on two- and four-turn spiral inductor test structures, supported by theoretical analysis and simulations. The study highlights that both the patterned ground shield (PGS) and the inductor geometry significantly influence the polarity and magnitude of SEFT peak deviations. In addition, the results confirm that these deviations are frequency-dependent, with their magnitude increasing at higher operating frequencies. At the system level, SEFTs are demonstrated to induce phase errors in phase-locked loops (PLLs), potentially causing data transmission errors in high-speed communication links. The experimental results are obtained from test circuits fabricated using a 65-nm CMOS process, operating at a nominal frequency of 2.56 GHz with a supply voltage of 1.2 V.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1876-1888"},"PeriodicalIF":1.9,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Dynamic Space Charge Effects in Pulse-Dilation Framing Camera Utilizing Dilation Pulses","authors":"Yanli Bai;Songchun Li;Guochun Huang;Wenlong Lv;Yi Jiang;Xingguo Qin","doi":"10.1109/TNS.2025.3553523","DOIUrl":"https://doi.org/10.1109/TNS.2025.3553523","url":null,"abstract":"The dilation pulse (DP) is a critical factor influencing the temporal performance of a magnetic focusing pulse-dilation framing camera (PDFC). As the DP propagates along the photocathode (PC), it not only induces variations in acceleration voltage but also results in different drift times, dilated ratios, and motion radii for the electron pulse (EP) at various PC positions. This significantly affects spatiotemporal dispersion (STD) of the dynamic space charge effect (SCE) during the EP drift process. To address the issue, the drift step recovery diodes (DSRDs) are employed to design the DP. By establishing a connection with the dynamic spatiotemporal characteristics of the EP, the impact on the dynamic SCE is analyzed. Research results indicate that the DSRD circuit can generate four DPs with peak voltages ranging from −3.508 to −1.819 kV, rise times between 236 and 288 ps, average amplitude change rates from 22.36% to 35.0%, and slope change rates from 40.07% to 62.80%. When a specific DP is applied to the 50 mm PC, the transient temporal dispersion (TTD) of the SCE during the EP drift process is inversely proportional to the electron density and drift velocity. The transient spatial dispersion (TSD) is significantly influenced by the EP’s radius and its ratio to the axial width, decreasing as both factors increase. When the four DPs are individually applied to the PC, during the EP drift process, the DP with the smallest amplitude change rate and the largest slope change rate reduces the average temporal dispersion (TD) along the PC from 0.764 to 0.590 ps and decreases non-uniformity from 40.69% to 27.73%. The average spatial dispersion (SD) is reduced from 21.87 to <inline-formula> <tex-math>$15.21~mu $ </tex-math></inline-formula> m, and non-uniformity drops from 39.94% to 26.13%. These findings provide the basis for analyzing and improving the STD and uniformity of the dynamic SCE. Additionally, they offer research insights into integrating high-power pulse technology into ultrafast diagnostic applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1672-1679"},"PeriodicalIF":1.9,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}