IEEE Transactions on Nuclear Science最新文献_第7页

Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam 总电离剂量对重离子束辐照SiGe HBT单事件瞬态灵敏度的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-13 DOI: 10.1109/TNS.2025.3579400

Jinxin Zhang;Xin Wang;Hongxia Guo;Wojciech Hajdas;Yunyi Yan;Juan Feng;Hui Wang;Xianxiang Wu

{"title":"Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam","authors":"Jinxin Zhang;Xin Wang;Hongxia Guo;Wojciech Hajdas;Yunyi Yan;Juan Feng;Hui Wang;Xianxiang Wu","doi":"10.1109/TNS.2025.3579400","DOIUrl":"https://doi.org/10.1109/TNS.2025.3579400","url":null,"abstract":"The synergistic effects of the total ionizing dose (TID) on sensitivity to a single event transient (SET) of the silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are investigated in a series of irradiation tests. SiGe HBTs with different biases are exposed to 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays up to 1 Mrad(Si). The single-event effect (SEE) transient currents observed with heavy ions at different biases are compared before and after 60Co exposures. Collector transient currents seen during SEE tests are smaller for bias voltages <inline-formula> <tex-math>$V_{!text {C}} = +2$ </tex-math></inline-formula> V and <inline-formula> <tex-math>$V_{!text {C}} =+3$ </tex-math></inline-formula> V in the <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray exposed devices. Reduction levels vary among samples with different bias values used in TID irradiations. Trap charges induced by the TID exposure can affect recombination processes and influence SEE observables seen during irradiations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2799-2807"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FPGA-Based Reset Management for Multiple Parallelized Readout ASICs Connected to a Multi-Cell SDD 连接多单元SDD的多个并行读出asic的基于fpga的复位管理

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-12 DOI: 10.1109/TNS.2025.3579045

Thomas F. Bechteler;Alexander Altmann;Jonas P. Reiffers;Peter Lechner;Carlo Fiorini

{"title":"FPGA-Based Reset Management for Multiple Parallelized Readout ASICs Connected to a Multi-Cell SDD","authors":"Thomas F. Bechteler;Alexander Altmann;Jonas P. Reiffers;Peter Lechner;Carlo Fiorini","doi":"10.1109/TNS.2025.3579045","DOIUrl":"https://doi.org/10.1109/TNS.2025.3579045","url":null,"abstract":"For X-ray imaging and photon detection, silicon drift detectors (SDDs) with several cells on a single chip and associated application-specific integrated circuits (ASICs) with multi-channel readout are widely used. This work presents a reset management circuit for a parallelized readout system for multi-cell SDDs. The readout system under investigation consists of a 19-cell SDD chip and three ASICs with reset capabilities. Yet, another reset management circuit is required, which handles the seamless reset operation between all ASICs and the SDD chip. With regard to its versatility and real-time capability, a field programmable gate array (FPGA) is used to implement the reset management circuit. For the design and implementation of this circuit, the time delays of all involved signal paths are investigated in detail. Measurements prove the functionality of the presented reset management. Furthermore, it is also shown how the reset management influences the dead time of the entire system. Although this work covers a system with three ASICs, the reset management is applicable for other SDD systems using two or more parallelized readout circuits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2934-2947"},"PeriodicalIF":1.9,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of Fast Front-End Electronics for the Muon Trigger Detector in the PSI muEDM Experiment PSI muEDM实验中μ子触发探测器快速前端电子器件的研制

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-11 DOI: 10.1109/TNS.2025.3578674

Tianqi Hu;Guan Ming Wong;Chavdar Dutsov;Siew Yan Hoh;Kim Siang Khaw;Diego Alejandro Sanz Becerra;Philipp Schmidt-Wellenburg;Yuzhi Shang;Yusuke Takeuchi

{"title":"Development of Fast Front-End Electronics for the Muon Trigger Detector in the PSI muEDM Experiment","authors":"Tianqi Hu;Guan Ming Wong;Chavdar Dutsov;Siew Yan Hoh;Kim Siang Khaw;Diego Alejandro Sanz Becerra;Philipp Schmidt-Wellenburg;Yuzhi Shang;Yusuke Takeuchi","doi":"10.1109/TNS.2025.3578674","DOIUrl":"https://doi.org/10.1109/TNS.2025.3578674","url":null,"abstract":"This article outlines the design and development of a fast front-end electronic readout board for the muon trigger detector in the muEDM experiment at the Paul Scherrer Institute (PSI). The trigger detector, which consists of a gate and aperture detector, is strategically located at the end of the superconducting injection channel to generate trigger signals for a magnetic kicker, which activates upon the injection of muons into the central region of the storage solenoid. Within the magnetic field of the solenoid, the system configuration is optimized to meet stringent performance specifications, including minimal signal propagation delays, high detection efficiency, non-magnetic properties, and consistent operational stability under varying experimental conditions. In addition, the design incorporates robust methods for rejecting positron contamination in the muon beamline. The results presented include performance evaluations from both bench testing and actual beam tests, highlighting the effectiveness and reliability of the electronic design.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2229-2237"},"PeriodicalIF":1.9,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Influence of Electronic Stopping on Displacement Damage and the Correction of Effective NIEL Model 电子停车对位移损伤的影响及有效NIEL模型的修正

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-10 DOI: 10.1109/TNS.2025.3578355

Bin Zhang;Tao Ying;Weiqi Li;Xiaodong Xu;Jianqun Yang;Xingji Li

{"title":"The Influence of Electronic Stopping on Displacement Damage and the Correction of Effective NIEL Model","authors":"Bin Zhang;Tao Ying;Weiqi Li;Xiaodong Xu;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2025.3578355","DOIUrl":"https://doi.org/10.1109/TNS.2025.3578355","url":null,"abstract":"In this article, we utilized molecular dynamics (MD) simulation techniques to study the cascade collision process of the primary knock-on atom (PKA) in silicon (Si), with incident energy ranging from 0.1 to 20 keV. Based on the electron–phonon MD (EPH) model, we investigated the influence of electronic stopping power on defect evolution. The research results indicate that the presence of electron stopping may not only inhibit the formation of defects, leading to a reduction in the number of defects induced by low-energy particles, but also hinder the recombination process of defects, increasing the number of stable defects after high-energy particle irradiation of materials. Based on the Norgett, Robinson, and Torrens (NRT) model and MD simulations, we applied a correction to the effective non-ionizing energy loss (NIEL) model by introducing the athermal recombination corrected (ARC) model. By controlling the physical processes of electron stopping, we have discussed the role of electron stopping in effective NIEL. The numerical calculation results show that our model exhibits a high degree of similarity in trends with traditional analytical methods. In the case of particle incidence at the kiloelectronvolt level, the effect of electron stopping on the calculation of NIEL is particularly significant. Furthermore, we have also found that a higher displacement threshold parameter setting can increase the magnitude of the NIEL values.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2130-2136"},"PeriodicalIF":1.9,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Early Assessment of the Fault Tolerance of Complex Digital Components From Virtual Platform Based Profiling 基于虚拟平台分析的复杂数字元件容错性早期评估

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-06 DOI: 10.1109/TNS.2025.3572557

Luc Noizette;Florent Miller;Youri Helen;Régis Leveugle

{"title":"Early Assessment of the Fault Tolerance of Complex Digital Components From Virtual Platform Based Profiling","authors":"Luc Noizette;Florent Miller;Youri Helen;Régis Leveugle","doi":"10.1109/TNS.2025.3572557","DOIUrl":"https://doi.org/10.1109/TNS.2025.3572557","url":null,"abstract":"The broad spectrum of functionalities offered by complex digital components built around CPU cores makes them essential for onboard computers (OBCs) or instrument controller units (ICUs). In order to obtain a quick but accurate first assessment of their fault tolerance in radiative environments, both development and test teams must use a set of representative programs, before the actual application software is available. In this context, we propose a methodology based on high level software profiling metrics only, without any details on the actual CPU microarchitecture, to early assess fault tolerance of complex digital components. A derating factor equation only based on profiling metrics is calibrated with available fault tolerance data for a set of programs. This derating factor is then applied to the static cross section of the target device. The approach has been applied to a set of benchmarks running on a RISC-V softcore. Early predictions obtained from this methodology are compared to real measures collected during neutron irradiation tests. Results show that all the evaluations are within the margins of error of the experiment. The impact on the methodology accuracy of combining several profiling metrics or using several regression types when calculating the derating factor is also discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2717-2726"},"PeriodicalIF":1.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a Pixel-Level Low-Dropout Regulator With Sub-Loop Compensation in Large Matrix Readout ASICs for Space X-Ray Imaging 空间x射线成像大矩阵读出asic中带子环路补偿的像素级低差稳压器设计

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-06 DOI: 10.1109/TNS.2025.3577357

Xiaoyu Wu;Jingsi Cheng;Yaoxing Dou;Ting Lu;Wu Gao

{"title":"Design of a Pixel-Level Low-Dropout Regulator With Sub-Loop Compensation in Large Matrix Readout ASICs for Space X-Ray Imaging","authors":"Xiaoyu Wu;Jingsi Cheng;Yaoxing Dou;Ting Lu;Wu Gao","doi":"10.1109/TNS.2025.3577357","DOIUrl":"https://doi.org/10.1109/TNS.2025.3577357","url":null,"abstract":"In energy-resolved X-ray imaging, non-ideal factors impact the application-specific integrated circuits (ASICs) for pixel readout. Integrating a low-dropout (LDO) regulator within the pixel array helps to improve consistency, but the design of pixel-level LDOs faces significant challenges under stringent power, stability, and area constraints. This article proposes a novel pixel-level LDO architecture employing sub-loop (SL) compensation to simultaneously enhance stability and transient response characteristics. The SL structure generates a left-half-plane (LHP) zero to cancel the secondary pole and is driven directly by the first stage of the error amplifier (EA) without requiring additional operational amplifiers. This approach achieves a <inline-formula> <tex-math>$3times $ </tex-math></inline-formula> reduction in compensation capacitance while maintaining a phase margin (PM) exceeding 60° across all load conditions. Furthermore, we introduce for the first time an LDO-based calibration method to mitigate the inter-pixel gain inconsistency caused by supply and ground voltage drops and manufacturing mismatches. A prototype chip has been designed and fabricated using a 130-nm CMOS process. The LDO occupies only <inline-formula> <tex-math>$1500~mu $ </tex-math></inline-formula>m2 of die area while consuming a quiescent current of <inline-formula> <tex-math>$26~mu $ </tex-math></inline-formula>A. When deployed in super-pixel constructions to validate the calibration scheme, the measured standard deviations of gain variation improved from 0.25 (uncorrected) to 0.08 mV/fC (corrected).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2245-2253"},"PeriodicalIF":1.9,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling the Radiation-Induced Attenuation Limits in Optical Fibers During Concurrent Irradiation, Thermal Annealing, and Photobleaching 模拟光纤在同步辐照、热退火和光漂白过程中的辐射诱导衰减极限

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-05 DOI: 10.1109/TNS.2025.3577108

Joseph J. Schuyt;Dominic A. Moseley;Bartholomew M. Ludbrook;Shahna M. Haneef;Rodney A. Badcock

{"title":"Modeling the Radiation-Induced Attenuation Limits in Optical Fibers During Concurrent Irradiation, Thermal Annealing, and Photobleaching","authors":"Joseph J. Schuyt;Dominic A. Moseley;Bartholomew M. Ludbrook;Shahna M. Haneef;Rodney A. Badcock","doi":"10.1109/TNS.2025.3577108","DOIUrl":"https://doi.org/10.1109/TNS.2025.3577108","url":null,"abstract":"The radiation-induced attenuations (RIAs) observed in optical fibers can be understood in terms of charge transfer and trapping rates using simple zero-field kinetic models. Herein, we analytically evaluate a one trap one recombination center (OTOR) kinetic model, wherein the primary trap state is actively thermally and/or optically bleached during the period of irradiation. Considering only the equilibrated system, we derive equations that describe the saturated trap concentrations in terms of the important experimental inputs: the radiation dose rate, the temperature, and the optical power. The equations are then reformulated in terms of saturation RIA values. Various optical fiber RIA data are extracted from the literature, wherein the aforementioned experimental inputs were varied. The derived equations describe these data with high fidelity in terms of the experimentally determined radiation dose rates, temperatures, and optical powers. Thus, we demonstrate a method through which high dose RIA values can be understood, modeled, and predicted under different experimental irradiation and bleaching conditions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2154-2162"},"PeriodicalIF":1.9,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Denoising Method for X-Ray Ptychography Combining a Physical Diffraction Model With a Deep Image Prior Network 结合物理衍射模型和深度图像先验网络的x射线平面照相去噪方法

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-05 DOI: 10.1109/TNS.2025.3576760

Mengnan Liu;Yu Han;Xiaoqi Xi;Qi Zhong;Liyang Zhang;Lei Li;Zijian Xu;Xiangzhi Zhang;Bin Yan

{"title":"A Denoising Method for X-Ray Ptychography Combining a Physical Diffraction Model With a Deep Image Prior Network","authors":"Mengnan Liu;Yu Han;Xiaoqi Xi;Qi Zhong;Liyang Zhang;Lei Li;Zijian Xu;Xiangzhi Zhang;Bin Yan","doi":"10.1109/TNS.2025.3576760","DOIUrl":"https://doi.org/10.1109/TNS.2025.3576760","url":null,"abstract":"X-ray ptychography is a lensless imaging technology with promising applications that can achieve nanometer resolution. However, the noise in the diffraction patterns degrades the performance of the phase recovery algorithms for ptychography. In reconstructed objects, the artifacts can affect details. We categorize the noise in the diffraction patterns into static intensity (SI) and dynamic random noise (DRN), which lead to periodic artifacts (PAs) and random noise in the reconstructed object. A denoising method for X-ray ptychography is, therefore, proposed to suppress the SI and DRN by a unified mathematical model. An explicit noise constraint based on the physical diffraction model (PDM) and an implicit prior regarding the object for network extraction are integrated to construct a joint noise constraint (JNC). Simulations and soft X-ray experiments demonstrate the advanced capability of the proposed method for noise suppression. Compared with other methods [extended ptychographical iterative engine (ePIE) and periodic-artifact suppressing algorithm (PASA)], the proposed method has high robustness and generality.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2194-2205"},"PeriodicalIF":1.9,"publicationDate":"2025-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the Relation Between SEEs Caused by Heavy-Ion Irradiation and Defects in SiC Devices 探索重离子辐照引起的see与SiC器件缺陷之间的关系

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-04 DOI: 10.1109/TNS.2025.3576491

H. Goncalves de Medeiros;C. Martinella;M. Belanche;N. Für;P. Kumar;M. I. M. Martins;M. Nagel;S. Peracchi;R. Drury;Z. Pastuovic;U. Grossner

引用次数: 0

Effects of Epitaxial Layer Thickness on Heavy Ion-Induced Single-Event Burnout in Vertical β-Ga₂O₃ Schottky Barrier Diodes 外延层厚度对垂直β-Ga₂O₃肖特基势垒二极管重离子诱导单事件烧蚀的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-02 DOI: 10.1109/TNS.2025.3576034

S. Islam;A. S. Senarath;E. Farzana;D. R. Ball;A. Sengupta;A. L. Sternberg;R. A. Reed;S. T. Pantelides;A. F. Witulski;J. S. Speck;D. M. Fleetwood;R. D. Schrimpf

{"title":"Effects of Epitaxial Layer Thickness on Heavy Ion-Induced Single-Event Burnout in Vertical β-Ga₂O₃ Schottky Barrier Diodes","authors":"S. Islam;A. S. Senarath;E. Farzana;D. R. Ball;A. Sengupta;A. L. Sternberg;R. A. Reed;S. T. Pantelides;A. F. Witulski;J. S. Speck;D. M. Fleetwood;R. D. Schrimpf","doi":"10.1109/TNS.2025.3576034","DOIUrl":"https://doi.org/10.1109/TNS.2025.3576034","url":null,"abstract":"Vertical beta-gallium oxide (<inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3) Schottky barrier diodes (SBDs) with field plates (FPs) and edge termination structures are irradiated with heavy ions, O+, Ar+, and Pr+ having linear energy transfer (LET) of 5.5–46 MeV<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm2/mg and californium-252 (Cf-252), which emits heavy ions and alpha particles. Devices that have the same structure and similar doping concentrations, but thicker (<inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>m) epitaxial layers, show higher single event burnout (SEB) voltage thresholds than devices with thinner (<inline-formula> <tex-math>$4~mu $ </tex-math></inline-formula>m) epitaxial layers. Ions that stop near the middle of the active region and those that pass through the entire region each cause catastrophic failure in these devices in contrast to previous results on silicon carbide (SiC) SBDs with similar epitaxial layer thicknesses. Cf-252 provides a low-LET, quick screening source for space applications of <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 SBDs. However, significantly lower SEB voltage thresholds are observed during high-LET, longer range, Pr heavy-ion testing. The edge region is found to be most vulnerable to SEB for these <inline-formula> <tex-math>$beta $ </tex-math></inline-formula>-Ga2O3 SBDs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2435-2442"},"PeriodicalIF":1.9,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11021431","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0