IEEE Transactions on Nuclear Science最新文献_第7页

Real-Time SER Measurements of CMOS Bulk 40- and 65-nm SRAMs Combined With Neutron Spectrometry at the JET Tokamak During Its Final D-T Plasma Operation 在JET托卡马克最后的D-T等离子体运行期间，结合中子光谱法对CMOS大块40和65纳米sram的实时SER测量

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-13 DOI: 10.1109/TNS.2025.3540345

Martin Dentan;Soilihi Moindjie;Matteo Cecchetto;Jean-Luc Autran;Rubén Garcia Alia;Richard Naish;John Waterhouse;Alan R. Horton;Xavier Litaudon;Daniela Munteanu;Jérôme Bucalossi;Philippe Moreau;Victor Malherbe;Philippe Roche;Dario Rastelli

{"title":"Real-Time SER Measurements of CMOS Bulk 40- and 65-nm SRAMs Combined With Neutron Spectrometry at the JET Tokamak During Its Final D-T Plasma Operation","authors":"Martin Dentan;Soilihi Moindjie;Matteo Cecchetto;Jean-Luc Autran;Rubén Garcia Alia;Richard Naish;John Waterhouse;Alan R. Horton;Xavier Litaudon;Daniela Munteanu;Jérôme Bucalossi;Philippe Moreau;Victor Malherbe;Philippe Roche;Dario Rastelli","doi":"10.1109/TNS.2025.3540345","DOIUrl":"https://doi.org/10.1109/TNS.2025.3540345","url":null,"abstract":"We performed soft error rate (SER) characterization of 40- and 65-nm bulk CMOS static random access memories (SRAMs) combined with neutron spectrometry in the deuterium-tritium (D-T)-fueled Joint European Torus (JET) tokamak during its final D-T plasma operation (September and October 2023) producing a series of several dozens of power pulses. Our experimental results demonstrate the impact of machine operation on the electronics’ reliability, emulating realistic conditions for circuits exposed to the partially radiation-shielded environment of future fusion reactors. Typical bit-flip (BF) rates of 493 h<inline-formula> <tex-math>${}^{-1} cdot $ </tex-math></inline-formula>Gbit−1 for 65-nm SRAMs and 2342 h<inline-formula> <tex-math>${}^{-1} cdot $ </tex-math></inline-formula>Gbit−1 for 40-nm SRAMs were measured for a residual machine-induced neutron flux of <inline-formula> <tex-math>$sim 3.15times 10^{5}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-2} cdot $ </tex-math></inline-formula>s−1 below the reinforced concrete slab (thickness of 1045 mm) supporting the tokamak chamber. To complete this characterization work, a general methodology for the SER prediction in such a mixed-field D-T neutron radiation environment composed of both thermal and fast neutrons (FN) (up to 14 MeV) is presented and validated from this ensemble of experimental data for the two SRAM technologies. Finally, the interest in this approach for future tokamaks and high-energy physics accelerators is discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1486-1495"},"PeriodicalIF":1.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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TlBr Films for Direct Digital Radiography 直接数字射线照相用TlBr胶片

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-07 DOI: 10.1109/TNS.2025.3539892

M. S. Squillante;M. J. Breen;J. F. Christian;A. Kargar;Y. Ogorodnik;F. Robertson;V. Nagarkar;M. R. Squillante;L. Cirignano;O. Maksimov;H. Kim;K. Karim;C. Scott

{"title":"TlBr Films for Direct Digital Radiography","authors":"M. S. Squillante;M. J. Breen;J. F. Christian;A. Kargar;Y. Ogorodnik;F. Robertson;V. Nagarkar;M. R. Squillante;L. Cirignano;O. Maksimov;H. Kim;K. Karim;C. Scott","doi":"10.1109/TNS.2025.3539892","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539892","url":null,"abstract":"The detector that converts X-ray intensity into a digitized electronic signal, processed into an image, often limits the performance of modern X-ray imaging systems, whether for medical, research, or industrial applications. Digital radiography (DR) uses the following two types of detectors: 1) indirect detectors, where a scintillating film converts X-rays into an optical signal read by an optical detector, and 2) direct detectors using semiconductors. Semiconductor X-ray detector technology typically uses a silicon wafer, an amorphous selenium (a-Se) film, or a relatively thin cadmium zinc telluride (CZT) crystal bump bonded to a readout platform. Although the use of a-Se and CZT improves the attenuation coefficient beyond that of silicon, a further increase in performance is highly desirable for improved imaging of higher-energy X-rays (greater than 20 keV). This article presents results on thallium bromide (TlBr) films coupled to a read-out integrated circuit (ROIC). TlBr, an attractive material for hard X-ray imaging due to its high atomic number and high density, achieves an image resolution of <inline-formula> <tex-math>$20 mu $ </tex-math></inline-formula>m as a 1 cm<inline-formula> <tex-math>${}^{2} times 100$ </tex-math></inline-formula>-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick columnar film deposited on CMOS ROIC.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1652-1657"},"PeriodicalIF":1.9,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Investigations on the Effects of Neutron Irradiation on the Commercial 8051 Microcontroller 中子辐照对商用8051单片机影响的研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-07 DOI: 10.1109/TNS.2025.3539695

Charu Sharma;Tanmoy Biswas;R. P. Behera;S. Amirthapandian

{"title":"Investigations on the Effects of Neutron Irradiation on the Commercial 8051 Microcontroller","authors":"Charu Sharma;Tanmoy Biswas;R. P. Behera;S. Amirthapandian","doi":"10.1109/TNS.2025.3539695","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539695","url":null,"abstract":"Neutron irradiation testing is becoming important for commercial-off-the-shelf (COTS) devices of the instrument and control (I&C) system while working in extreme environment applications where the risk of radiation is constant. This study exposes AT89C51RD2 8-bit high-performance flash microcontrollers by varying neutron fluence, assessing their resilience and vulnerabilities through in situ and ex situ experiments. Radiation tests were conducted with thermal and epithermal neutrons. Our results emphasize the importance of shielding, which shows greater resilience of the device in prolonging device lifespan, exhibiting fewer single-event upsets (SEUs) and better reliability in radiation-exposed environments. A single-event functional interrupt (SEFI) was observed during both in situ and ex situ experiments. During in situ experiments (thermal neutron irradiation), the failure was observed when the damage was ~10-8–10-7 dpa, whereas, during ex situ experiments (thermal and epithermal neutron irradiation), the performance of the microcontroller was affected when the damage is ~10-2 dpa. The reason for failure in the device could be due to damage produced by gamma rays (produced by induced activity) and displacement damage [by recoil and primary knock-on atoms (PKAs)]. The presence of 10B in the device, along with interactions with high-energy neutrons, can also lead to functional failures. However, overall findings suggest the potential for the device to develop robust systems in high-radiation environments, as it demonstrates the ability to withstand high neutron flux.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"848-857"},"PeriodicalIF":1.9,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Best-Fit Techniques to Estimate SBU/MCU Cross Sections From Radiation-Ground Tests in Memories 从存储器中的辐射地面测试中估计SBU/MCU横截面的最佳拟合技术

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-07 DOI: 10.1109/TNS.2025.3539956

Francisco J. Franco;Juan C. Fabero;Hortensia Mecha;Mohammadreza Rezaei;Guillaume Hubert;Juan A. Clemente

引用次数: 0

Scatter and Blur Corrections for High-Energy X-Ray Radiography 高能 X 射线射线摄影的散射和模糊校正

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-07 DOI: 10.1109/TNS.2025.3539686

Luke W. Campbell;Andrew J. Gilbert;Rick S. Wittman

{"title":"Scatter and Blur Corrections for High-Energy X-Ray Radiography","authors":"Luke W. Campbell;Andrew J. Gilbert;Rick S. Wittman","doi":"10.1109/TNS.2025.3539686","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539686","url":null,"abstract":"High-energy X-ray radiography is useful as a highly penetrating method for imaging through dense materials. However, the primary modes of interaction of X-rays at these energies involve scattering or the production of secondary high-energy photons, which can interfere with the image. In addition, detector blurring, often resulting from scatter within the detector, can reduce image sharpness. Both of these processes can be mitigated with the use of convolution kernels, with the main challenge being that the proper kernel to use is not known, particularly for the scatter contribution. By radiographing solid slabs of uniform attenuation, we show that point spread functions and material-specific point scatter functions can be determined to significantly reduce the effect of detector blurring and object scatter. Constraining the fits to the slabs and uniform transmission within the slabs is sufficient to recover these functions. A functional form that reproduces the angular distribution of high-energy bremsstrahlung X-rays is presented for recovering point scatter functions. The method is applied to radiographs of objects from bremsstrahlung X-ray sources operating at 4- and 7.5-MV endpoint energies and a significant increase in sharpness is observed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1583-1593"},"PeriodicalIF":1.9,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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The Impact of ⁶⁰Co γ -Ray Irradiation on the Linearity of Conductance Update and the Learning Precision of Al:HfOx/TiOx Heterojunction Memristive Synapses 6⁰Co γ射线辐照对Al:HfOx/TiOx异质结记忆突触电导更新线性度和学习精度的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-06 DOI: 10.1109/TNS.2025.3539301

Chuan Ma;Jiaqi Yan;Hongjia Song;Binghan Wu;Jiayue Guo;Xiangli Zhong;Jinbin Wang;Hongxia Guo

{"title":"The Impact of ⁶⁰Co γ -Ray Irradiation on the Linearity of Conductance Update and the Learning Precision of Al:HfOx/TiOx Heterojunction Memristive Synapses","authors":"Chuan Ma;Jiaqi Yan;Hongjia Song;Binghan Wu;Jiayue Guo;Xiangli Zhong;Jinbin Wang;Hongxia Guo","doi":"10.1109/TNS.2025.3539301","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539301","url":null,"abstract":"Good linearity and radiation resistance of conductance updates in memristive synapses are crucial for their use in neuromorphic computing chips in space. Here, the Au/Al:HfOx/TiOx/Ti memristive synapses with good linearity are prepared. The effects of irradiation on the memristive performances are studied through 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray irradiation experiments. The effect of irradiation on the image recognition accuracy of the neural network based on the memristive synapse crossbar array is predicted. The results show that the devices maintained good conductance update linearity under irradiation. When the 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray irradiation reaches 1 Mrad(Si), the nonlinearity (NL) of conductance update only increases from 0.096 to 0.163, and the image recognition accuracy of the memristor neural network decreases by about 2% (from 91% to 89%). The initial value of oxygen defect content in HfOx resistive materials after Al doping modification is relatively high (36%), which can explain why irradiation has little effect on conductance update linearity and recognition accuracy. These results suggest that the Au/Al:HfOx/TiOx/Ti memristors show good radiation resistance under 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray irradiation, which makes them promising candidates for artificial synapses in space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"866-874"},"PeriodicalIF":1.9,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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An Analytical Method for Evaluating the Evolution of Space Charge Effect in Self-Powered Neutron Detectors 自供电中子探测器空间电荷效应演化的分析方法

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-06 DOI: 10.1109/TNS.2025.3539354

Shiyu Liu;Qingmin Zhang;Haiyu Kong;Ziping Huang;Yongnian Wang;Bite Qiu;Yaodong Sang;Bangjie Deng;Zhuang Shao;Kangfu Zhu

{"title":"An Analytical Method for Evaluating the Evolution of Space Charge Effect in Self-Powered Neutron Detectors","authors":"Shiyu Liu;Qingmin Zhang;Haiyu Kong;Ziping Huang;Yongnian Wang;Bite Qiu;Yaodong Sang;Bangjie Deng;Zhuang Shao;Kangfu Zhu","doi":"10.1109/TNS.2025.3539354","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539354","url":null,"abstract":"The space charge effect in self-powered neutron detector (SPND) insulators, as one of the key factors affecting detector performance, has always been a focus of research. Previous studies have provided iterative simulation algorithms; however, these algorithms are time-consuming and inefficient and do not directly explain how the detector parameters and neutron flux affect the space electric field and its evolution. Therefore, for the first time, we propose an analytical method to calculate the space charge effect. This method provides an analytical expression for the evolution of the space charge distribution, significantly improving computational efficiency. The analytical expression reveals that the space charge distribution is proportional to the neutron flux density, bulk resistivity, and dielectric constant of the insulator, which confirms the results from the previous numerical studies. Moreover, this work presents a method for calculating the time constant of the space charge evolution for the first time. Based on this time constant, the electric field equilibrium time can be predicted, providing guidance for presetting the time step in iterative calculations. Comparisons between the analytical predictions and iterative calculations were conducted for both cobalt SPND (Co-SPND) and rhodium SPND (Rh-SPND). The results from the analytical model and from the iterative model are consistent, demonstrating the accuracy of this proposed analytical method.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"807-815"},"PeriodicalIF":1.9,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Implications of Elevated Temperatures on the Accuracy of Pulsed-Laser SEE Testing 温度升高对脉冲激光SEE测试精度的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-04 DOI: 10.1109/TNS.2025.3538531

Joel M. Hales;Adrian Ildefonso;Ani Khachatrian;Gregory R. Allen;Dale McMorrow

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Design Study of a Compact Injector for a Synchrotron Light Source 同步加速器光源紧凑型注入器的设计研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-04 DOI: 10.1109/TNS.2025.3538576

Daniele Francescone;Paolo Craievich;Marcos Gaspar;Thomas Geoffrey Lucas;Andrea Mostacci;Riccardo Zennaro

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In Situ Analog In-Memory Computing Under Ionizing Radiation Exposure 电离辐射照射下的原位模拟内存计算

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-03 DOI: 10.1109/TNS.2025.3537985

T. Patrick Xiao;Maximilian Siath;Matthew Spear;Donald Wilson;Christopher H. Bennett;Ben Feinberg;David R. Hughart;Jereme Neuendank;William E. Brown;Hugh Barnaby;Vineet Agrawal;Helmut Puchner;Sapan Agarwal;Matthew J. Marinella

{"title":"In Situ Analog In-Memory Computing Under Ionizing Radiation Exposure","authors":"T. Patrick Xiao;Maximilian Siath;Matthew Spear;Donald Wilson;Christopher H. Bennett;Ben Feinberg;David R. Hughart;Jereme Neuendank;William E. Brown;Hugh Barnaby;Vineet Agrawal;Helmut Puchner;Sapan Agarwal;Matthew J. Marinella","doi":"10.1109/TNS.2025.3537985","DOIUrl":"https://doi.org/10.1109/TNS.2025.3537985","url":null,"abstract":"We experimentally performed in situ analog in-memory computing (IMC) under ionizing radiation, using a 40-nm silicon-oxide–nitride-oxide–silicon (SONOS) charge-trap memory array with peripheral circuits that support analog matrix-vector multiplication (MVM) operations. The SONOS array used analog MVMs to process the last layer of a convolutional neural network (CNN) for TinyImageNet image classification while being irradiated by gamma rays from a Co-60 source. We experimentally characterized how the following quantities were gradually degraded by increasing the total ionizing dose (TID), up to 3.2 Mrad(Si): neural network weights that were mapped to SONOS states, dot products that were computed by analog MVMs, and the resulting image classification accuracy of the neural network. Using multiscale modeling, we confirmed that the experimentally observed accuracy loss originates almost entirely from the state-dependent current shifts induced by ionizing radiation in the SONOS memory cells. Our experimentally validated model of radiation effects in SONOS analog computing can be used to guide the design of reliable space-grade analog IMC accelerators.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1243-1251"},"PeriodicalIF":1.9,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0