IEEE Transactions on Nuclear Science最新文献

{"title":"Dual-Bias Optimization of the Analog Front-End and the Pinned Depleted Diode in the CPV-4 Sensor","authors":"Weida Zheng;Yunpeng Lu;Yang Zhou;Chang Xu;Hongyu Zhang;Jing Dong;Mingyi Dong;Peilian Li;Qun Ouyang","doi":"10.1109/TNS.2026.3732688","DOIUrl":"https://doi.org/10.1109/TNS.2026.3732688","url":null,"abstract":"Future electron–positron colliders require vertex detectors with high spatial resolution, low noise, and stringent power constraints. The compact pixel for vertex (CPV-4) prototype combines a pinned depleted diode (PDD) sensor with a silicon-on-insulator (SOI) analog front-end, whose performance is jointly determined by sensor bias and circuit operating conditions. This work presents a systematic experimental study of this bias dependence through a dual-bias optimization framework. The buried p-well (BPW) bias and front-end bias parameters are jointly tuned to investigate the balance between PDD capacitance reduction and back-gate-induced threshold shifts. Front-end-only pixels are used to characterize the circuit response; PDD-integrated pixels are used to evaluate sensor-front-end coupling; and near-infrared laser measurements are used to validate the response to sensor-generated signals. The results show that a sufficiently negative BPW bias is essential for stable operation of PDD-integrated pixels. Under optimized conditions, the gain of PDD-integrated pixels increases by approximately a factor of 4, while the equivalent noise charge (ENC) decreases by more than a factor of 2. Near-infrared laser measurements confirm sensor-generated signal detection at the operating point selected by the electrical bias scans, supporting the proposed optimization approach.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4038-4044"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Ion LET and Epitaxial Thickness on Single-Event Effects in Homojunction GaN Vertical Diodes","authors":"A. S. Senarath;S. Islam;A. Sengupta;O. Meilander;J. M. Osheroff;T. Anderson;A. Jacobs;R. Kaplar;M. A. Ebrish;S. L. Kosier;D. M. Fleetwood;J. D. Caldwell;R. D. Schrimpf","doi":"10.1109/TNS.2026.3725651","DOIUrl":"https://doi.org/10.1109/TNS.2026.3725651","url":null,"abstract":"This study systematically investigates the effects of the ion linear energy transfer (LET) and epitaxial/drift layer thickness on single-event effects (SEEs) in vertical homojunction gallium nitride (GaN) p-i-n diodes. Devices with thicker drift layers exhibit greater resilience to single-event burnout (SEB), while thinner epitaxial structures show reduced SEB threshold voltages. Under low-LET irradiation using argon (Ar) ions, SEB behavior closely mirrors that observed with californium-252 (Cf-252) fission fragments. On the contrary, exposure to higher-LET ions, such as praseodymium (Pr), induces more severe degradation, including single-event leakage current (SELC) and progressive failure via a thermal and defect-driven positive feedback loop, even at moderate reverse bias voltages. These results distinguish two SEB mechanisms based on the ion LET: one associated with direct breakdown from localized heating and defect generation at low LET, and another driven by a positive feedback loop under high LET conditions. To mitigate permanent damage, the findings suggest that a derating margin of approximately 70%–90% is required for these devices, consistent with observations in silicon carbide (SiC) power devices. The agreement between Ar and Cf-252 data highlights the advantages of using a Cf-252 source as a cost-effective and practical surrogate for accelerator-based heavy ion testing in early SEE evaluation of GaN devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4023-4030"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11661351","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Study of Low-Temperature and Room-Temperature Proton-Induced Dark Current and Annealing Effects on CMOS Image Sensors","authors":"Sini Yang;Lin Wen;Bingkai Liu;Zitao Zhao;Yihao Cui;Qi Guo;Yudong Li","doi":"10.1109/TNS.2026.3733038","DOIUrl":"https://doi.org/10.1109/TNS.2026.3733038","url":null,"abstract":"This article compares the proton-induced dark current and annealing effects on CMOS image sensors (CISs) under room-temperature (RT-CIS, 298 K) and low-temperature (LT-CIS, 253 K) conditions. It is demonstrated that LT-CIS exhibits a higher dark current and produces more hot pixels than that of the RT-CIS after proton irradiation, as low temperature hinders defect mobility. The physical model of dark current established at room-temperature irradiation is verified on LT-CIS. Annealing effects occur at a relatively low temperature (i.e., 263 K) on LT-CIS, as evidenced by a reduction in both the mean dark current and the number of hot pixels. After high-temperature annealing, several discrete peaks are observed in the dark current distributions on both LT-CIS and RT-CIS, indicating that there is a difference in the defect characteristics for distinct irradiation temperatures. This difference is able to be identified using the dark current spectrum and activation energy test. Furthermore, a reverse annealing phenomenon (that is, dark current increase during annealing) was observed in both LT-CIS and RT-CIS when the annealing temperature reached 493 K. The observed phenomenon suggests that defects may reorder and form new stable defects at the elevated temperatures. The reverse annealing is likely associated with the formation of an oxygen-vacancy complex (V₂O).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"3927-3934"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of Compact Neural Network for On-Chip Incident Angle Classification in SMART MAPS","authors":"R. Zhao;H. Yang;K. Fan;D. Zhang;S. Li;R. Zheng;J. Wang;F. Xue;Y. Zhang;Z. Liang;X. Wei;J. Ye;Y. Hu","doi":"10.1109/TNS.2026.3728764","DOIUrl":"https://doi.org/10.1109/TNS.2026.3728764","url":null,"abstract":"CMOS monolithic active pixel sensors (MAPSs) are widely used as vertex detectors in high energy physics (HEP) experiments. In future high luminosity experiments, the high hit rate leads to large volumes of output data and poses challenges to MAPS. To address these issues, we propose a SMART MAPS architecture that integrates neural networks on-chip. The architecture enables the classification of particle incident angles and the rejection of hits generated by the beam background, thereby reducing the data volume. We design and optimize the algorithms targeted at on-chip implementation, including clustering, feature extraction, and a multilayer perceptron (MLP). These algorithms are implemented in Python and tested on hit data captured by the TaichuPix-3 at four different incident angles. Results demonstrate that the proposed design achieves 76.6% accuracy in incident angle classification, which reaches the same level of accuracy as that of the convolutional neural network (CNN) architecture discussed in this article. Moreover, the proposed algorithm requires only 184 weight parameters, a reduction of over 99.8% in storage and computation resources. These algorithms provide the possibility to integrate such smart classification capabilities into a MAPS.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4120-4128"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A CubeSat Electronics System for Dual-Satellite Coordinated Soft X-Ray Polarimetry","authors":"Lirong Xie;Shiqiang Zhou;Kai Chen;Zuke Feng;Difan Yi;Ran Chen;Ruinan Fan;Cheng Lian;Ziyi Zhang;Siying Liu;Dong Wang;Xiangming Sun;Enwei Liang;Huanbo Feng;Hongbang Liu","doi":"10.1109/TNS.2026.3722942","DOIUrl":"https://doi.org/10.1109/TNS.2026.3722942","url":null,"abstract":"Addressing the unique requirements for a wide field of view and rapid response in soft X-ray polarization measurements of transient sources such as gamma-ray bursts (GRBs), this article proposes the design of a high-reliability CubeSat payload electronics system for dual-satellite cooperative observation. The system employs a gas microchannel pixel detector (GMPD) and a Topmetal-L sensor as its core components, forming a highly integrated, low-noise payload hardware platform. It achieves a field of view of <inline-formula> <tex-math>$90^{circ } {,}times {,}~90^{circ } $ </tex-math></inline-formula>, a sensitive area of 3.69 cm², and a power consumption of less than 6 W, operating within an energy range of 2–10 keV. The system incorporates autonomous high-voltage (HV) ramp-up/ramp-down control and a dual-protection mechanism based on count rate and discharge events, enabling in-orbit responses to risks such as the South Atlantic Anomaly (SAA) and solar particle events. It also supports single-event upset (SEU) detection and recovery, as well as in-orbit firmware upgrades. The communication interface adopts a redundant primary/backup controller area network (CAN) bus design, with measured channel switching times of less than 100 ms, meeting the demands for real-time command interaction in dual-satellite coordination. By utilizing a large-array pixel sensor with region-of-interest readout and integrating an in-orbit track compression algorithm, the system significantly reduces data storage and downlink transmission resource burdens. Ground tests demonstrate an equivalent noise charge of 22.35 <inline-formula> <tex-math>${mathrm{e}}^{-}$ </tex-math></inline-formula>, HV monitoring linearity better than ±0.5%, and an output range extending to −5 kV. Thermal vacuum cycling tests show no performance degradation after five cycles between <inline-formula> <tex-math>$- 5~^{circ } $ </tex-math></inline-formula>C and <inline-formula> <tex-math>$40~^{circ } $ </tex-math></inline-formula>C. This work demonstrates the system’s capability for autonomous observation, intelligent coordination, and reliable operation in complex space environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4096-4109"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Nuclear Science Publication Information","authors":"","doi":"10.1109/TNS.2026.3742195","DOIUrl":"https://doi.org/10.1109/TNS.2026.3742195","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"C2-C2"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11741386","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Pure-Silica Core Optical Fibers as Transport Fibers in a Radioluminescence-Based Dosimetry System","authors":"F. Fricano;A. Morana;A. Facchini;Y. Ouerdane;A. Boukenter;D. Lambert;P. Paillet;S. Girard","doi":"10.1109/TNS.2026.3733487","DOIUrl":"https://doi.org/10.1109/TNS.2026.3733487","url":null,"abstract":"The contribution of silica-based multimode optical fibers (OFs) with different hydroxyl (OH) group contents, commonly used to transport the radioluminescence of scintillating OF probes up to the detectors, is evaluated. This approach identifies the pure silica core fiber with the highest OH (high-OH) content as the best candidate for reducing the stem effect, allowing spectral filtering and radiation-induced attenuation (RIA) mitigation when using Ce³⁺-doped fiber probes. A focus is then given to the study of the evolution of radiation-induced luminescence (RIL), RIA, and the stem effect in this high-OH pure silica OF. Spectral and dose-rate measurements performed before and after a 300 kGy(SiO<inline-formula> <tex-math>${}_{2}$ </tex-math></inline-formula>) irradiation at room temperature reveal a dose-dependent evolution of its emission spectrum, with the contribution of SiODC(II) defects becoming dominant at higher doses and reducing the effectiveness of optical filtering. Simultaneous RIA and RIL measurements show that, up to 500 Gy, attenuation is mainly transient and does not affect signal stability. These results provide useful guidelines for optimizing transport fibers (TFs) and scintillating fiber dosimeters operating in high-dose environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4031-4037"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A DOI-Based Reconstruction Method for Mitigating Radial Blurring in Coded-Aperture Gamma Imaging With Pixelated CdZnTe Detectors","authors":"Yanghui Qin;Changqing Feng;Ziheng Zhou;Yang Liu;Shubin Liu","doi":"10.1109/TNS.2026.3735715","DOIUrl":"https://doi.org/10.1109/TNS.2026.3735715","url":null,"abstract":"Coded-aperture imaging with compact systems often suffers from radial blurring due to non-negligible detector thickness. This article proposes a reconstruction method to mitigate this depth-induced blurring in pixelated CdZnTe detectors by incorporating depth-of-interaction (DOI) information. The approach discretizes the detector volume into multiple virtual layers, each associated with a system matrix that characterizes the radial shift at a specific depth. By incorporating these layered matrices into an iterative maximum likelihood expectation maximization (MLEM) process, the algorithm effectively projects data from discrete interaction depths into a unified source plane for joint reconstruction. This strategy effectively mitigates radial blurring and restores sharp source distributions by compensating for depth-induced radial shift effects. To evaluate the proposed method, a coded-aperture imaging prototype system based on pixelated CdZnTe detectors was developed, with DOI capability implemented via the cathode-to-anode ratio (C/A ratio) and electron drift time. A DOI calibration procedure was conducted using a ²²Na source to establish an accurate relationship between the DOI and the C/A ratio or electron drift time, achieving a depth resolution of better than 1 mm. For ²²Na sources at the periphery of the field of view (FOV), the radial-to-azimuthal ratio of the point spread function (PSF) full width at half maximum (FWHM) improved from 1.16 to 1.01, while the contrast-to-noise ratio (CNR) increased from 25.3 to 28.8 at 200 iterations. A similar improvement in radial-to-azimuthal ratio and CNR was also observed for ¹³⁷Cs sources.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4149-4159"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Area-Efficient High-Precision Latching Current Limiter for Space Applications","authors":"Xiankun Li;Tingcun Wei;Minwei Qiu;Nan Chen","doi":"10.1109/TNS.2026.3728189","DOIUrl":"https://doi.org/10.1109/TNS.2026.3728189","url":null,"abstract":"This article presents an area-efficient high-precision latching current limiter (LCL). A pMOS power transistor with priority-voting substrate control is integrated on-chip, eliminating reverse-blocking body-diode leakage while reducing the transistor area. High-precision programmable current limiting is achieved via chopper offset-stabilization in the current-sensing amplifier, which cancels amplifier offset voltage and delivers a precision better than 4.2% over a 0.1–6 A range. The LCL also features comprehensive intelligent integration including soft-start, reverse blocking, and fast trip-off to suppress short-circuit peak currents, as well as programmable current-limit timing and reset timing, ensuring safe operating area (SOA) compliance. Operating from 1.7 to 5.5 V, the LCL exhibits 28 m<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula> <sc>on</small>-resistance at 3.3 V/6 A while occupying only 6.56 mm². Fabricated in a radiation-hardened <inline-formula> <tex-math>$0.18~mu $ </tex-math></inline-formula>m BCD process incorporating multiple radiation-hardening-by-design (RHBD) techniques, it achieves total ionizing dose (TID) tolerance of 300 krad(Si) and single-event latch-up (SEL) immunity at an linear energy transfer (LET) of 76.5 MeV <inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> cm²/mg.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4003-4013"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Demonstration of Hollow Core Optical Fiber-Based Radiation Sensing Technique With a 200 MeV Bunched Electron Beam","authors":"Robert Garbrecht Larsen;Alexander Gerbershagen;Manjit Dosanjh;Jacobus Maarten Schippers;Antonio Gilardi;Emma Buchanan;Ian Davidson;Greg Jackson;Greg Jasion;Tom Kelly;Francesco Poletti;Somarpita Pradhan;Austin Taranta;Natalie Wheeler;Hesam Mohammadi;Leonard Budd;Konstantin Vidiajev;Inaki Ortega Ruiz","doi":"10.1109/TNS.2026.3725844","DOIUrl":"https://doi.org/10.1109/TNS.2026.3725844","url":null,"abstract":"Part of the current effort to upgrade the intensity of CERN beamlines in the North Experimental Area is examining technologies for their potential use in a radiation hard transverse beam profile monitors. One such technique is a novel idea to use a hollow core fiber (HCF), as they have been shown to be extremely radiation hard. We report on two tests of a novel radiation-hard beam sensing technique based on hollow-core optical fibers filled with a scintillating gas, carried out at the CERN linear electron accelerator for research (CLEAR) facility using a 100–200 MeV beam. We investigated several scintillating gases and found that using CF₄ gas in the fiber leads to rapid deterioration of the sensor, which is believed to be caused by chemical reactions in the gas. Using a gas mixture containing 99% argon and 1% N₂, we demonstrate a sensor capable of reconstructing the transverse profile of the beam, measuring the one sigma width of the beam to be <inline-formula> <tex-math>$1.15~pm ~0.02$ </tex-math></inline-formula> mm. A reference measurement with a cerium(III)-doped Yttrium aluminum garnet (YAG) screen gave a one sigma width of <inline-formula> <tex-math>$1.30~pm ~0.07$ </tex-math></inline-formula> mm. The fiber tested with argon and N₂ showed no loss of signal after receiving a <inline-formula> <tex-math>$mathrm {3.3~text {MGy}}$ </tex-math></inline-formula> dose. A test carried out with pure N₂ gas gave no signal, indicating that the detected light is mostly created by the interaction with the Ar, hinting that no significant amount of Cherenkov light is trapped in the HCF.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4082-4095"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11661356","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}