IEEE Transactions on Nuclear Science最新文献

IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-18 DOI: 10.1109/TNS.2025.3577954

引用次数: 0

IEEE Transactions on Nuclear Science information for authors IEEE核科学汇刊作者信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-18 DOI: 10.1109/TNS.2025.3578222

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Analog Readout Channel for Continuous-Wave X-Ray Science Applications 连续波x射线科学应用的模拟读出通道

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-30 DOI: 10.1109/TNS.2025.3565911

P. Lazzaroni;M. Hammer;M. Manghisoni;A. Miceli;L. Ratti;V. Re;H. Shi

{"title":"Analog Readout Channel for Continuous-Wave X-Ray Science Applications","authors":"P. Lazzaroni;M. Hammer;M. Manghisoni;A. Miceli;L. Ratti;V. Re;H. Shi","doi":"10.1109/TNS.2025.3565911","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565911","url":null,"abstract":"Diffraction-limited storage rings are posing huge challenges to the detectors required in new generation x-ray experiments, especially those based on continuous-wave operation. A modern mixed-signal readout channel demands strict requirements on noise, power consumption, and frame rate, asking for advancements in both analog and digital designs. The proposed readout channel, prototype fast readout channel for ptychography applications (pFREYA), is designed for pixellated detectors to be employed in continuous-wave X-ray science applications (e.g., ptychography) with a frame rate of 1 MHz. It is developed in a commercial 65-nm CMOS technology and features single photon resolution at 5-, 9-, 18-, and 25-keV photon energies, a power consumption of <inline-formula> <tex-math>$220~mu $ </tex-math></inline-formula>W, and a pixel area of <inline-formula> <tex-math>$150times 150~mu $ </tex-math></inline-formula>m2. It also offers a 2-bit switchable peaking time selection for signal-to-noise ratio optimization, signal-over-threshold (<monospace>SOT</monospace>) identification for zero-suppression, and 10-bit analog-to-digital conversion per channel. In the present work, an overview of the readout channel architecture will be given, and results from the characterization of the charge sensitive amplifier (CSA) and the shaper employed in the architecture will be provided, in addition to the noise performance of the pFREYA channel.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1959-1968"},"PeriodicalIF":1.9,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Integration of Monte Carlo Transport Simulations Into a TCAD Workflow for Electron Detector Developments 蒙特卡罗传输模拟集成到电子探测器开发的TCAD工作流程中

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-30 DOI: 10.1109/TNS.2025.3565813

O. Marcelot;D. Lambert;C. Marcelot

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SEU Rate Calculation Using In-Flight Proton Detection: Methodologies and Evaluation of Time-Scale Variability 利用飞行中的质子探测计算SEU速率：方法和时间尺度变异性的评估

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-30 DOI: 10.1109/TNS.2025.3565670

Jieyi Wang;Longlong Zhang;Chunqin Wang;Youzhi Li;Guohong Shen;Bin Yuan;Xiaoheng Xu;Tian Yu;Yingqi Ma

{"title":"SEU Rate Calculation Using In-Flight Proton Detection: Methodologies and Evaluation of Time-Scale Variability","authors":"Jieyi Wang;Longlong Zhang;Chunqin Wang;Youzhi Li;Guohong Shen;Bin Yuan;Xiaoheng Xu;Tian Yu;Yingqi Ma","doi":"10.1109/TNS.2025.3565670","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565670","url":null,"abstract":"The real-time single event upset (SEU) rate in low Earth orbit (LEO) is subject to fluctuations influenced by the short-term dynamics of protons in radiation belts and differences in flight trajectories. This study presents three streamlined methodologies for calculating SEU rates using real-time in-flight proton detection rather than relying on models or historical data. Moreover, to evaluate the performance of these methods, data from the National Space Science Center (NSSC) space particle radiation effect comprehensive measuring instrument (SPRECMI) were utilized. This dataset demonstrates that proton contributions predominantly drive the SEUs as established in prior research. The analysis reveals that accuracy and responsiveness exhibit reverse trends across different time scales with a 6-h interval identified as the optimal balance for this SEU monitoring. Furthermore, detailed assessments of methodology performance including error, concordance, and applicability limitations on daily and 6-h scales are provided. This approach to calculating SEU rates supports both the study of space weather impacts on SEUs and the engineering challenges of real-time SEU risk warnings.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1919-1926"},"PeriodicalIF":1.9,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A Full Current-Mode AFE With Dark Noise Suppression Using Differential Leading-Edge Discrimination for the CMS/LHC Timing Detector at CERN 应用于欧洲核子研究中心CMS/LHC定时探测器的差分前沿鉴别全电流模AFE暗噪声抑制

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-30 DOI: 10.1109/TNS.2025.3564870

Edgar Albuquerque;Ricardo Bugalho;Luís Bica Oliveira;João Varela

{"title":"A Full Current-Mode AFE With Dark Noise Suppression Using Differential Leading-Edge Discrimination for the CMS/LHC Timing Detector at CERN","authors":"Edgar Albuquerque;Ricardo Bugalho;Luís Bica Oliveira;João Varela","doi":"10.1109/TNS.2025.3564870","DOIUrl":"https://doi.org/10.1109/TNS.2025.3564870","url":null,"abstract":"In this article, we present a full current-mode analog front-end (AFE) of the time-of-flight at high-rate (TOFHiR) front-end application specific integrated circuit (ASIC) designed for the new barrel timing layer (BTL) timing detector that will feature in the Compact Muon Solenoid (CMS) experiment of the upgraded high-luminosity Large Hadron Collider (HL-LHC) accelerator at CERN. The AFE features for the first time, in silicon, the differential leading-edge discrimination (DLED) operation to suppress the increasing radiation induced dark noise and stabilize the baseline, leading to a time resolution of 25 ps at the beginning-of-life (BoL) and 55 ps at the end-of-life (EoL) of the detector. The proposed current-mode AFE is less sensitive to parameter spread and parasitics since the signal flows through low impedance nodes, hence also reducing channel-to-channel mismatches. This feature is of utmost importance since TOFHiR is a multichannel ASIC and the BTL will feature over 10k TOFHiR ASICs totaling 330k channels. These assumptions were validated by measurements taken on 100 dies and more than 3100 channels, and this achievement was key to the commissioning of the BTL detector. The TOFHiR ASIC was designed in a standard mainstream CMOS 130-nm technology, has a total die area of <inline-formula> <tex-math>$8.5times 5$ </tex-math></inline-formula> mm2 and 32 channels, and dissipates less than 12 mW per channel. As this article was finalized more than 5000 TOFHiR ASICs have been measured, 3600 have been assembled in 1800 front-end boards, and 200 burned-in boards have already been shipped to CERN for assembling in the BTL detector.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1938-1946"},"PeriodicalIF":1.9,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product 低缺陷和高电子迁移寿命产品的CdZnTe晶体

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-29 DOI: 10.1109/TNS.2025.3565234

Song Zhang;Hui Zhang

{"title":"CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product","authors":"Song Zhang;Hui Zhang","doi":"10.1109/TNS.2025.3565234","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565234","url":null,"abstract":"A 3-in CdZnTe ingot with a large single-crystal volume was grown with a self-developed traveling heater method (THM) furnace and process. Observations by infrared (IR) transmission microscopy revealed that Te inclusions within the crystal were maintained below <inline-formula> <tex-math>$5~mu $ </tex-math></inline-formula>m with a quite low density. A <inline-formula> <tex-math>$5times 5times 1.26$ </tex-math></inline-formula> mm planar detector fabricated with CdZnTe crystal exhibited a leakage current of 10.63 nA under a bias voltage of 1000 V, indicating excellent working voltage. The energy resolution of the planar detector reached 5.65% at 241Am@59.5 keV, and its <inline-formula> <tex-math>$mu _{text {e}}tau _{text {e}}$ </tex-math></inline-formula> was calculated to be <inline-formula> <tex-math>$5.90times 10^{-3}$ </tex-math></inline-formula> cm2/V. A <inline-formula> <tex-math>$4times 4$ </tex-math></inline-formula> pixelated detector was also fabricated using a <inline-formula> <tex-math>$5times 5times 1$ </tex-math></inline-formula> mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1969-1972"},"PeriodicalIF":1.9,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules 质子辐射对DDR5模块影响的实验研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-28 DOI: 10.1109/TNS.2025.3565125

Yang Li;Masakazu Yoshida;Yuibi Gomi;Yifan Deng;Yukinobu Watanabe;Satoshi Adachi;Masatoshi Itoh;Guohe Zhang;Chaohui He;Masanori Hashimoto

{"title":"Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules","authors":"Yang Li;Masakazu Yoshida;Yuibi Gomi;Yifan Deng;Yukinobu Watanabe;Satoshi Adachi;Masatoshi Itoh;Guohe Zhang;Chaohui He;Masanori Hashimoto","doi":"10.1109/TNS.2025.3565125","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565125","url":null,"abstract":"Double data rate 5 synchronous dynamic random access memory (DDR5 SDRAM), as the latest generation in its family, is an outstanding candidate for future space applications, highlighting the importance of considering its radiation performance. In this article, we investigated the proton-induced radiation effects on DDR5 dual-inline-memory-modules (DIMMs) for the first time. Consumer-grade DDR5 modules were tested, taking into account several factors, including proton energy, module vendors, and the specific power management unit (PMU) on DDR5. The results provided the single-event effect (SEE) cross section (CS) curve as a function of proton energy and uncovered the sensitivity of different vendors and the PMU. In addition, comparison tests between server-grade DDR4 and DDR5 modules were conducted to study the impacts of different generations, external error correction code (ECC) cases, and accumulated effects. Fault injection simulations were also conducted to identify potential causes for the observed patterns in the experiments with the existence of on-die ECC.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1907-1918"},"PeriodicalIF":1.9,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-Off-the-Shelf FPGA 商用现成FPGA上的脉冲激光测试评估瞬态剂量率效应

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-25 DOI: 10.1109/TNS.2025.3564367

Yang Li;Zhigang Peng;Yaxin Guo;Ge Tang;Junlin Li;Ruibin Li;Wei Chen;Yao Xiao;Yonghong Li;Mo Li;Chaohui He;Guohe Zhang

{"title":"Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-Off-the-Shelf FPGA","authors":"Yang Li;Zhigang Peng;Yaxin Guo;Ge Tang;Junlin Li;Ruibin Li;Wei Chen;Yao Xiao;Yonghong Li;Mo Li;Chaohui He;Guohe Zhang","doi":"10.1109/TNS.2025.3564367","DOIUrl":"https://doi.org/10.1109/TNS.2025.3564367","url":null,"abstract":"To overcome the complexity and challenges of transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> irradiation experiments, this article adopted pulsed lasers to simulate the transient dose rate effect (TDRE) on a commercial off-the-shelf (COTS) field-programmable gate array (FPGA), taking advantage of good stability, low interference, high efficiency, and low cost. Three test programs were designed for the Virtex-5 XC5VSX95T FPGA, including one program used in previous transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> irradiation experiments. Laser experiments involved a wide energy range and recorded failure features of the device under test (DUT) and photocurrents on the power supplies. By comparing the results with transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> irradiation experiments, it was demonstrated that pulsed lasers can be used to effectively simulate FPGA’s TDRE, showing consistent effect characteristics. In addition, the sensitivity of the internal clock and logic resources of the FPGA was analyzed, finding that delay-locked loops (DLLs) have a high sensitivity and disturbances in the logic resources could propagate. There are multiple factors affecting the internal sensitivities. Furthermore, like transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> rays, high-intensity pulsed lasers would also induce dynamic reconfiguration of the FPGA, which was analyzed specifically. These research findings are important supplements to studying FPGA’s TDRE and also demonstrate a significant prospect of using pulsed lasers to simulate the TDRE in very large-scale integrated (VLSI) circuits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1927-1937"},"PeriodicalIF":1.9,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators CMOS环形振荡器单事件瞬态的动态电压依赖建模

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-25 DOI: 10.1109/TNS.2025.3564513

Venkata Sathyajith Kampati;Stefano Bonaldo;Paul Leroux;Jeffrey Prinzie

引用次数: 0