IEEE Transactions on Nuclear Science最新文献

IEEE Transactions on Nuclear Science information for authors IEEE核科学汇刊作者信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-09-18 DOI: 10.1109/TNS.2025.3605514

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IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-09-18 DOI: 10.1109/TNS.2025.3605513

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Investigation of the Gate Bias Dependent Single Event Leakage Current in p-GaN Gate High Electron Mobility Transistors p-GaN栅极高电子迁移率晶体管中栅极偏置相关单事件漏电流的研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-21 DOI: 10.1109/TNS.2025.3601176

Rongxing Cao;Yuxin Lu;Dongping Yang;Yuanyuan Xue;Chengan Wan;Xuelin Yang;Hanxun Liu;Weixiang Zhou;Dan Han;Yuxiong Xue

{"title":"Investigation of the Gate Bias Dependent Single Event Leakage Current in p-GaN Gate High Electron Mobility Transistors","authors":"Rongxing Cao;Yuxin Lu;Dongping Yang;Yuanyuan Xue;Chengan Wan;Xuelin Yang;Hanxun Liu;Weixiang Zhou;Dan Han;Yuxiong Xue","doi":"10.1109/TNS.2025.3601176","DOIUrl":"https://doi.org/10.1109/TNS.2025.3601176","url":null,"abstract":"This study investigates the effect of different gate biases on the leakage current of p-type GaN high electron mobility transistors (HEMTs) under heavy ion irradiation. Utilizing Ta ion irradiation, the leakage degradation at the gate bias <inline-formula> <tex-math>$V_{mathrm {gs}}$ </tex-math></inline-formula> range of 0 to −5 V was studied. The most severe degradation was observed at approximately <inline-formula> <tex-math>$V_{mathrm {gs}}=-3$ </tex-math></inline-formula> V. Electrical measurements revealed a 20% positive shift in threshold voltage (at <inline-formula> <tex-math>$V_{mathrm {gs}}=-3$ </tex-math></inline-formula> V), a two times increase in <sc>on</small>-resistance, a reduction in Schottky barrier height, and a significant shift in the ideality factor after heavy ion exposure. Technology computer-aided design (TCAD) simulations indicated that increasing the magnitude of negative gate bias enhanced the internal electric field strength, while the lattice temperature exhibited a decreasing trend. The analysis suggests that under heavy ion irradiation, leakage current at different gate biases is primarily attributed to micro-burn channels formed via thermal excitation and carrier tunneling, with their likelihood governed by the internal electric field and lattice temperature. Under the intermediate gate bias, the electric field strength and lattice temperature inside the device were both higher, resulting in more micro-burned channels and a significantly higher leakage rate than other bias conditions. These findings can provide an important theoretical basis for the single event leakage degradation characteristics during the potential application of p-GaN HEMT devices in radiation environment.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3023-3032"},"PeriodicalIF":1.9,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A Versatile Digital Data Acquisition System for the 8π Gamma-Ray Spectrometer 一种用于8π伽马射线光谱仪的多功能数字数据采集系统

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-20 DOI: 10.1109/TNS.2025.3600988

Z. Yu;K. Starosta;C. Andreoiu;H. Asch;R. Gerber;G. Hackman;M. S. Martin;A. Redey;D. Tam;J. Tõke;K. van Wieren;A. Woinoski

{"title":"A Versatile Digital Data Acquisition System for the 8π Gamma-Ray Spectrometer","authors":"Z. Yu;K. Starosta;C. Andreoiu;H. Asch;R. Gerber;G. Hackman;M. S. Martin;A. Redey;D. Tam;J. Tõke;K. van Wieren;A. Woinoski","doi":"10.1109/TNS.2025.3600988","DOIUrl":"https://doi.org/10.1109/TNS.2025.3600988","url":null,"abstract":"The <inline-formula> <tex-math>$8pi $ </tex-math></inline-formula> gamma-ray spectrometer is a highly-efficient and selective ball array of bismuth germanium oxide (BGO) detectors. In 2014, it was relocated from TRIUMF, Canada’s particle accelerator center, to the Simon Fraser University Nuclear Science Laboratory (SFU NSL), where it has been recommissioned with upgraded components for rare decay spectroscopy. In its current configuration, <inline-formula> <tex-math>$8pi $ </tex-math></inline-formula> has 12 BGO pentagon detectors and 60 BGO hexagon detectors arranged in an icosahedral symmetry. Together, they provide 132 readout channels and approximately 95% solid-angle coverage. A unique digital data acquisition system (DAQ) has been developed around the existing <inline-formula> <tex-math>$8pi $ </tex-math></inline-formula> BGO detectors for the study of rare decays. This system allows for the fine-tuning of logic and digitization parameters through a web interface, eliminating the need for physical reconfiguration and providing a level of flexibility not previously offered. This upgraded DAQ system includes three synchronized VF48 digitizers for waveform digitization, two XLM72S modules for online multiplicity filtering, and additional components for thresholding and pile-up handling functionality. Performance metrics such as energy resolution, timing resolution, and efficiency were measured, demonstrating the functionality of all <inline-formula> <tex-math>$8pi $ </tex-math></inline-formula> subsystems. The spectrometer is fully prepared for experiments demanding efficient and selective time-resolved gamma-ray spectroscopy. Designed with future expansion in mind, <inline-formula> <tex-math>$8pi $ </tex-math></inline-formula> can easily support additional detectors, making it well-suited for a wide range of future experiments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3102-3108"},"PeriodicalIF":1.9,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Nuclear Science information for authors IEEE核科学汇刊作者信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-18 DOI: 10.1109/TNS.2025.3595494

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IEEE Transactions on Nuclear Science 2025 Best Paper Award IEEE核科学汇刊2025年最佳论文奖

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-18 DOI: 10.1109/TNS.2025.3592743

Gian-Franco Dalla Betta

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Editorial Introducing New Associate Editors 编辑介绍新的副编辑

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-18 DOI: 10.1109/TNS.2025.3594609

Gian-Franco Dalla betta

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List of Reviewers RADECS 2024 Special Issue 评审人员名单RADECS 2024特刊

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-18 DOI: 10.1109/TNS.2025.3592046

Dan Fleetwood

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IEEE Transactions on Nuclear Science information for authors IEEE核科学汇刊作者信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-18 DOI: 10.1109/TNS.2025.3595639

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IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-18 DOI: 10.1109/TNS.2025.3595484

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