{"title":"p-GaN栅极高电子迁移率晶体管中栅极偏置相关单事件漏电流的研究","authors":"Rongxing Cao;Yuxin Lu;Dongping Yang;Yuanyuan Xue;Chengan Wan;Xuelin Yang;Hanxun Liu;Weixiang Zhou;Dan Han;Yuxiong Xue","doi":"10.1109/TNS.2025.3601176","DOIUrl":null,"url":null,"abstract":"This study investigates the effect of different gate biases on the leakage current of p-type GaN high electron mobility transistors (HEMTs) under heavy ion irradiation. Utilizing Ta ion irradiation, the leakage degradation at the gate bias <inline-formula> <tex-math>$V_{\\mathrm {gs}}$ </tex-math></inline-formula> range of 0 to −5 V was studied. The most severe degradation was observed at approximately <inline-formula> <tex-math>$V_{\\mathrm {gs}}=-3$ </tex-math></inline-formula> V. Electrical measurements revealed a 20% positive shift in threshold voltage (at <inline-formula> <tex-math>$V_{\\mathrm {gs}}=-3$ </tex-math></inline-formula> V), a two times increase in <sc>on</small>-resistance, a reduction in Schottky barrier height, and a significant shift in the ideality factor after heavy ion exposure. Technology computer-aided design (TCAD) simulations indicated that increasing the magnitude of negative gate bias enhanced the internal electric field strength, while the lattice temperature exhibited a decreasing trend. The analysis suggests that under heavy ion irradiation, leakage current at different gate biases is primarily attributed to micro-burn channels formed via thermal excitation and carrier tunneling, with their likelihood governed by the internal electric field and lattice temperature. Under the intermediate gate bias, the electric field strength and lattice temperature inside the device were both higher, resulting in more micro-burned channels and a significantly higher leakage rate than other bias conditions. These findings can provide an important theoretical basis for the single event leakage degradation characteristics during the potential application of p-GaN HEMT devices in radiation environment.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3023-3032"},"PeriodicalIF":1.9000,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Gate Bias Dependent Single Event Leakage Current in p-GaN Gate High Electron Mobility Transistors\",\"authors\":\"Rongxing Cao;Yuxin Lu;Dongping Yang;Yuanyuan Xue;Chengan Wan;Xuelin Yang;Hanxun Liu;Weixiang Zhou;Dan Han;Yuxiong Xue\",\"doi\":\"10.1109/TNS.2025.3601176\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates the effect of different gate biases on the leakage current of p-type GaN high electron mobility transistors (HEMTs) under heavy ion irradiation. Utilizing Ta ion irradiation, the leakage degradation at the gate bias <inline-formula> <tex-math>$V_{\\\\mathrm {gs}}$ </tex-math></inline-formula> range of 0 to −5 V was studied. The most severe degradation was observed at approximately <inline-formula> <tex-math>$V_{\\\\mathrm {gs}}=-3$ </tex-math></inline-formula> V. Electrical measurements revealed a 20% positive shift in threshold voltage (at <inline-formula> <tex-math>$V_{\\\\mathrm {gs}}=-3$ </tex-math></inline-formula> V), a two times increase in <sc>on</small>-resistance, a reduction in Schottky barrier height, and a significant shift in the ideality factor after heavy ion exposure. Technology computer-aided design (TCAD) simulations indicated that increasing the magnitude of negative gate bias enhanced the internal electric field strength, while the lattice temperature exhibited a decreasing trend. The analysis suggests that under heavy ion irradiation, leakage current at different gate biases is primarily attributed to micro-burn channels formed via thermal excitation and carrier tunneling, with their likelihood governed by the internal electric field and lattice temperature. Under the intermediate gate bias, the electric field strength and lattice temperature inside the device were both higher, resulting in more micro-burned channels and a significantly higher leakage rate than other bias conditions. These findings can provide an important theoretical basis for the single event leakage degradation characteristics during the potential application of p-GaN HEMT devices in radiation environment.\",\"PeriodicalId\":13406,\"journal\":{\"name\":\"IEEE Transactions on Nuclear Science\",\"volume\":\"72 9\",\"pages\":\"3023-3032\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-08-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nuclear Science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11133699/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11133699/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of the Gate Bias Dependent Single Event Leakage Current in p-GaN Gate High Electron Mobility Transistors
This study investigates the effect of different gate biases on the leakage current of p-type GaN high electron mobility transistors (HEMTs) under heavy ion irradiation. Utilizing Ta ion irradiation, the leakage degradation at the gate bias $V_{\mathrm {gs}}$ range of 0 to −5 V was studied. The most severe degradation was observed at approximately $V_{\mathrm {gs}}=-3$ V. Electrical measurements revealed a 20% positive shift in threshold voltage (at $V_{\mathrm {gs}}=-3$ V), a two times increase in on-resistance, a reduction in Schottky barrier height, and a significant shift in the ideality factor after heavy ion exposure. Technology computer-aided design (TCAD) simulations indicated that increasing the magnitude of negative gate bias enhanced the internal electric field strength, while the lattice temperature exhibited a decreasing trend. The analysis suggests that under heavy ion irradiation, leakage current at different gate biases is primarily attributed to micro-burn channels formed via thermal excitation and carrier tunneling, with their likelihood governed by the internal electric field and lattice temperature. Under the intermediate gate bias, the electric field strength and lattice temperature inside the device were both higher, resulting in more micro-burned channels and a significantly higher leakage rate than other bias conditions. These findings can provide an important theoretical basis for the single event leakage degradation characteristics during the potential application of p-GaN HEMT devices in radiation environment.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.