IEEE Transactions on Nuclear Science最新文献

{"title":"IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference","authors":"","doi":"10.1109/TNS.2024.3456988","DOIUrl":"https://doi.org/10.1109/TNS.2024.3456988","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10683873","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142246542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Software-Assisted Event Builder for Belle II Experiment","authors":"D. Levit, M. Bessner, D. Biswas, D. Charlet, T. Higuchi, R. Itoh, E. Jules, P. Kapusta, T. Kunigo, Y.-T. Lai, T. S. Lau, M. Nakao, K. Nishimura, S.-H. Park, E. Plaige, H. Purwar, P. Robbe, S. Y. Suzuki, M. Taurigna, G. Varner, S. Yamada, Q.-D. Zhou","doi":"10.1109/tns.2024.3462595","DOIUrl":"https://doi.org/10.1109/tns.2024.3462595","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142265679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Pixel Matrix Prototype Chip With High-Precision Time Measurement For CMOS Pixel Detectors","authors":"B. Cheng, F. Morel, A. Dorokhov, H. Pham, G. Bertolone, A. Himmi, C. Colledani, J. Qin, L. Zhao, C. Hu-Guo","doi":"10.1109/tns.2024.3462484","DOIUrl":"https://doi.org/10.1109/tns.2024.3462484","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142265678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Characterization Temperature on the Radiation Induced Degradation of Optocouplers","authors":"Cen Xiong;Heyi Li;Binghuang Duan;Xianguo Xu;Hongchao Zhao;Quanyou Chen;Chao Zeng","doi":"10.1109/TNS.2024.3460390","DOIUrl":"https://doi.org/10.1109/TNS.2024.3460390","url":null,"abstract":"This study examines the radiation-induced effects on commercial 4N49 optocouplers by measuring their response at different temperatures. The devices under test (DUTs) are subjected to a series of total doses. At each accumulated dose, the devices are characterized at several temperatures between -25 °C and 100 °C. The results demonstrate that irradiation has no negative effects on the light-emitting diode (LED). The current gain of the phototransistor decreases significantly after irradiation. For a constant base current, the gain degradation increases with increasing temperature. The current transfer ratio (CTR) of the optocoupler decreases after irradiation, which is dominated by the gain degradation of the phototransistor. Temperature dependence of the radiation-induced parametric degradation varies with the total ionizing dose (TID) and the forward current of the LED. Specifically, an unusual increase in the photoresponse is observed at extremely low LED forward current and high temperature, which originates from the increased reverse leakage current of the collector-base (CB) junction of the phototransistor.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142450933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prototype Design of Readout Electronics for the Multiple Sampling Ionization Chamber at HIAF - HFRS","authors":"Haibo Yang, Chengcheng Liu, Shuwen Tang, Fenhua Lu, Shun Liao, Xianqin Li, Jieyu Zhu, Yangzhou Su, Honglin Zhang, Haoqing Xie, Hao Quan, Xin Sun, Longjie Wang, Chengxin Zhao","doi":"10.1109/tns.2024.3460062","DOIUrl":"https://doi.org/10.1109/tns.2024.3460062","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrafast Luminescence of CsF Crystal","authors":"Ruichen Wang, Chan Guo, Chen Peng, Xinlong Yan, Yuzhen Jia, Kan Zhang, Yi Lu, Weiheng Duan, Weimin He, Weihu Yang, Hetong Han, Zhaohui Song, Fan Yang","doi":"10.1109/tns.2024.3456764","DOIUrl":"https://doi.org/10.1109/tns.2024.3456764","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"L1Topo: The Level-1 Topological Processor for ATLAS Phase-I Upgrade and its Firmware Evolution for Use within the Phase-II Global Trigger","authors":"Viacheslav Filimonov","doi":"10.1109/tns.2024.3457038","DOIUrl":"https://doi.org/10.1109/tns.2024.3457038","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing Neutron/Gamma Discrimination in the Low-Energy Region for EJ-276 Plastic Scintillation Detector Using Machine Learning","authors":"Vo Hong Hai, Nguyen Minh Dang, Nguyen Tri Toan Phuc, Hoang Thi Kieu Trang, Truong Thi Hong Loan, Phan Le Hoang Sang, Masaharu Nomachi","doi":"10.1109/tns.2024.3456863","DOIUrl":"https://doi.org/10.1109/tns.2024.3456863","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boron-10 Doped Polysiloxanes as Matrix Materials for Application in the Simultaneous Detection and Discrimination of Gamma Rays and Fast and Thermal Neutrons","authors":"Caleb Chandler, Mackenzie Duce, Jonathan Arrue, Dominique Porcincula, Alan Sellinger, Anna S. Erickson","doi":"10.1109/tns.2024.3456709","DOIUrl":"https://doi.org/10.1109/tns.2024.3456709","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SCARLET: A Readout ASIC Bump-Bonded to SDD Array for Large Event Throughput","authors":"Griseld Deda;Idham Hafizh;Giacomo Borghi;Marco Carminati;Francesco Ficorella;Giancarlo Pepponi;Carlo Fiorini","doi":"10.1109/TNS.2024.3455424","DOIUrl":"10.1109/TNS.2024.3455424","url":null,"abstract":"This work introduces silicon drift detector-ASIC array for large event throughput (SCARLET), a novel readout ASIC designed for integration with monolithic arrays of silicon drift detectors (SDDs) using a bump bonding scheme within a hybrid pixel assembly, suitable for high-rate high-density energy-dispersive X-ray detection systems in synchrotron beamlines or industrial applications. The ASIC, designed in a standard \u0000<inline-formula> <tex-math>$0.35~mu $ </tex-math></inline-formula>\u0000 m CMOS technology, is composed of four parallel readout channels, each integrating the complete pulse processing electronics, from the charge-sensitive amplifier to the analog-to-digital converter (ADC), delivering the signal in a digital format. Specifically, the pulse processing chain features a reset-type CSA with pMOS input stage, a seventh-order semi-Gaussian shaping amplifier, a peak stretcher equipped with peak detector circuit and optimum pile-up rejection (PUR) scheme, and an analog memory to enhance throughput. Each pair of channels is digitized using a priority multiplexing scheme by a 12-bit on-chip successive approximation register (SAR) ADC, providing a digital output at a maximum sampling rate of 5 Ms/s. This enables the allocation of 2.5 MHz to each channel when the multiplexer operates sequentially between them. The layout floorplan is compatible for bump bonding assembly by means of gold-stud bump technique with 2 mm pitch square SDDs. Experimental spectroscopic measurements conducted with the hybrid module yielded a resolution of 240 eV FWHM (24.4 e\u0000<inline-formula> <tex-math>$^{-}$ </tex-math></inline-formula>\u0000 rms) at the shortest filter pulsewidth of 200 ns. A best resolution of 148 eV FWHM (10.3 e\u0000<inline-formula> <tex-math>$^{-}$ </tex-math></inline-formula>\u0000 rms) was achieved at the optimum filter pulsewidth of \u0000<inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>\u0000 s. In terms of throughput capability, the ASIC reaches an average output count rate (OCR) of 1.8 Mc/s per channel. When two channels are irradiated simultaneously with an input count rate (ICR) of 4 Mc/s, a maximum count rate of 3.6 Mc/s is measured at the output of the shared ADC operated in priority modality.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}