IEEE Transactions on Nuclear Science最新文献

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In Memoriam 悼念
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555336
Dennis B. Brown
{"title":"In Memoriam","authors":"Dennis B. Brown","doi":"10.1109/TNS.2025.3555336","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555336","url":null,"abstract":"Recounts the career and contributions of (Dennis B. Brown).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"976-976"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Message From the New Editor-in-Chief 新主编致辞
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3557182
Gian-Franco Dalla Betta
{"title":"A Message From the New Editor-in-Chief","authors":"Gian-Franco Dalla Betta","doi":"10.1109/TNS.2025.3557182","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557182","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1515-1515"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971777","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Editorial Conference Summary by the General Chair 总主席编写的编辑会议摘要
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555338
Heather Quinn
{"title":"Editorial Conference Summary by the General Chair","authors":"Heather Quinn","doi":"10.1109/TNS.2025.3555338","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555338","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"965-968"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971753","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of a Tl₂LaCl₅:Ce Crystal Coupled With a Silicon Photomultiplier for a Compact Single-Photon Emission Computed Tomography System Tl₂LaCl₅:Ce晶体与硅光电倍增管耦合用于紧凑型单光子发射计算机断层扫描系统的表征
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3562678
I. H. Bang;H. W. Park;A. Khan;J. Jegal;H. J. Kim
{"title":"Characterization of a Tl₂LaCl₅:Ce Crystal Coupled With a Silicon Photomultiplier for a Compact Single-Photon Emission Computed Tomography System","authors":"I. H. Bang;H. W. Park;A. Khan;J. Jegal;H. J. Kim","doi":"10.1109/TNS.2025.3562678","DOIUrl":"https://doi.org/10.1109/TNS.2025.3562678","url":null,"abstract":"The novel Tl2LaCl5:Ce (TLC) crystal scintillator has a high density and effective Z number. Hence, a single-photon emission computed tomography (SPECT) detector equipped with the scintillator has excellent X-ray and <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray detection efficiency and a high light yield (LY). The feasibility of utilizing the TLC crystal coupled with a silicon photomultiplier (SiPM) was investigated for a compact SPECT detector. The TLC crystal (Ø<inline-formula> <tex-math>$8times 2$ </tex-math></inline-formula> mm) coupled with a one-channel SiPM (<inline-formula> <tex-math>$6.07times 6.07$ </tex-math></inline-formula> mm2) was used. Electrical characteristics of the SiPM were used for optimizing the operating voltage and dynamic range. The <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays’ energy spectra of 133 Ba, 241Am, and 152 Eu were obtained. The SiPM outputs were digitized utilizing a data acquisition (DAQ) system. The breakdown voltage of the SiPM was measured to be 24.8 V. The operating voltage was fixed as 29.8 V by comparing energy resolutions for different operating voltages under 81-keV <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray excitation from a 133Ba radioactive source. The linearity of the SiPM was measured to be within 3.7% for up to 8500 incident photons. Owing to the high LY of the TLC crystal and the dynamic range of SiPM, the best energy resolution of the TLC crystal was achieved to be 8.7% full-width-half-maximum at 121.7-keV <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray at the voltage of 29.8 V. The TLC crystal coupled with SiPM is expected to be utilized for the development of compact SPECT detectors. It can replace conventional photomultiplier detectors and attain a good image quality, comparable to that of a solid-state detector in the SPECT system.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1828-1832"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Outstanding Conference Paper Award: 2024 IEEE Nuclear and Space Radiation Effects Conference 杰出会议论文奖:2024 年电气和电子工程师学会核与空间辐射效应会议
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555340
{"title":"Outstanding Conference Paper Award: 2024 IEEE Nuclear and Space Radiation Effects Conference","authors":"","doi":"10.1109/TNS.2025.3555340","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555340","url":null,"abstract":"Presents the recipients of (NSREC) awards for (2024).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"973-975"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Memoriam 悼念
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555294
Harry T. Weaver
{"title":"In Memoriam","authors":"Harry T. Weaver","doi":"10.1109/TNS.2025.3555294","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555294","url":null,"abstract":"Recounts the career and contributions of (Harry T. Weaver).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"979-980"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971741","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3557607
{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2025.3557607","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557607","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"C2-C2"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971765","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science publication information 电气和电子工程师学会《核科学学报》出版物信息
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3557646
{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2025.3557646","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557646","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"C2-C2"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Single Event Upset Susceptibility of 10-nm SRAM Devices to Ionizing Radiation 10nm SRAM器件对电离辐射的单事件扰动敏感性研究
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-18 DOI: 10.1109/TNS.2025.3562421
Norbert Seifert;Soonyoung Lee;Wydglif Dorlus;Rony Mohammed;Adam Neale;Nicholas Pieper
{"title":"On the Single Event Upset Susceptibility of 10-nm SRAM Devices to Ionizing Radiation","authors":"Norbert Seifert;Soonyoung Lee;Wydglif Dorlus;Rony Mohammed;Adam Neale;Nicholas Pieper","doi":"10.1109/TNS.2025.3562421","DOIUrl":"https://doi.org/10.1109/TNS.2025.3562421","url":null,"abstract":"In this work, we report on the radiation-induced soft error susceptibilities of three static random-access memory (SRAM) cell types fabricated on a 10-nm technology to various types of ionizing radiation, including high-energy and thermal neutrons, high-energy protons, alpha-particles, beta radiation, and heavy ions. Our results highlight that: 1) high-energy neutron (HEn) upset rates continue to dominate the total soft error rate (SER) in terrestrial radiation environments and 2) SERs continue to benefit from technology scaling. Accelerated testing projections demonstrate a <inline-formula> <tex-math>$sim 20times $ </tex-math></inline-formula> reduction in bit-level SERs between 45- and 10-nm SRAM cells of the same type. Results obtained from a three-year real-time test campaign are discussed and compared to accelerated testing projections and previous real-time testing results published by this team. Interestingly, the 10-nm real-time testing results show a consistent underestimation compared to projections obtained from accelerated beam testing. It is speculated that the scattering and absorption of HEns in the real-time testing setup are the main reasons for the observed discrepancy. Finally, single event upset (SEU) data are compared with selected space-weather databases, specifically gamma ray bursts (GRBs), ground level enhancements (GLEs), and solar energetic proton (SEP) events collected by the Geostationary Operational Environmental Satellites (GOES). No clear correlation is observed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1768-1778"},"PeriodicalIF":1.9,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving the Radiation Resistance of the Fiber via Bismuth Depositing 通过沉积铋提高光纤的抗辐射性能
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-17 DOI: 10.1109/TNS.2025.3561169
Zirui Chen;Jianxiang Wen;Bo Wang;Hairul Abdul Rashid;Yanhua Luo;Fufei Pang;Gang-Ding Peng;Tingyun Wang
{"title":"Improving the Radiation Resistance of the Fiber via Bismuth Depositing","authors":"Zirui Chen;Jianxiang Wen;Bo Wang;Hairul Abdul Rashid;Yanhua Luo;Fufei Pang;Gang-Ding Peng;Tingyun Wang","doi":"10.1109/TNS.2025.3561169","DOIUrl":"https://doi.org/10.1109/TNS.2025.3561169","url":null,"abstract":"Erbium-doped fiber (EDF), bismuth-erbium co-doped fiber (BEDF) without bismuth deposited bismuth on the fiber surface (BEDF1), and BEDF with bismuth deposited on the fiber surface (BEDF2) were fabricated. Leveraging the Geant4 toolkit, the theoretical models of BEDFs are established. When the thickness of the bismuth deposited layer is <inline-formula> <tex-math>$5~mu $ </tex-math></inline-formula>m, the energy deposited in the core is reduced by 49.66% (5.91 MeV). The energy deposited in the core is reduced by 19.7% (1.06 MeV) when Bi3+ ions’ concentration is 10 wt%. EDF, BEDF1, and BEDF2 were irradiated with 0.3-, 0.5-, 0.8-, and 1.5-kGy doses of Co60 source. After radiation with 1.5 kGy, radiation-induced absorption (RIA) of BEDF2 at 1300 nm is 20.31% (1.01 dB/m) lower than that of BEDF1. The radiation induced gain variation (RIGV) and fluorescence lifetime of EDF are decreased with the increase in irradiation dose, while the RIGV and lifetime of BEDF1 and BEDF2 both increased initially and then decreased linearly. The normalized gain of BEDF2 is increased by up to 1.08 dB/m after 0.5-kGy radiation. Bismuth ions in the fiber core improve the radiation resistance of the fiber, and those deposited on the fiber surface further improve the radiation resistance. The research results have reference value and application potential in radiation environment detection and space satellite positioning.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1779-1789"},"PeriodicalIF":1.9,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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