IEEE Transactions on Nuclear Science最新文献_第3页

Scintillation Properties of CsCu2I3 Perovskite Single Crystal Grown by Room Temperature Solution Processing Method 室温固溶法生长ccu2i3钙钛矿单晶的闪烁特性

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-04 DOI: 10.1109/TNS.2025.3595803

B. Bansal;V. Anand;Naveen Kumar Tailor;V. Ranga;Soumitra Satapathi;P. J. Sellin;Mohit Tyagi;G. Anil Kumar

{"title":"Scintillation Properties of CsCu2I3 Perovskite Single Crystal Grown by Room Temperature Solution Processing Method","authors":"B. Bansal;V. Anand;Naveen Kumar Tailor;V. Ranga;Soumitra Satapathi;P. J. Sellin;Mohit Tyagi;G. Anil Kumar","doi":"10.1109/TNS.2025.3595803","DOIUrl":"https://doi.org/10.1109/TNS.2025.3595803","url":null,"abstract":"Metal halide perovskites have received great interest in developing scintillator materials. Among various types of perovskites, low dimensional metal halide perovskites have high exciton binding energy and photo-luminescence quantum yield (PLQY), making them suitable for X-ray and <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray detection. In this work, we report the growth and characterization (structural and optical) of 1-D CsCu2I3 single crystal (SC). The SC was grown using the solvent evaporation method at room temperature. The crystal exhibits an orthorhombic structure with <italic>Cmcm space group. The optical characterizations show a yellow photoluminescence (PL) with a large Stoke’s shift (~230 nm) that originate from self-trapped exciton (STE) emission. The X-ray photoelectron spectroscopy (XPS) results indicate that the addition of oleic acid (OA) prevents the oxidation of Cu+. Further, we coupled the SC with a silicon photomultiplier (SiPM) to study the scintillation properties. The grown crystal has been characterized for light output, energy resolution, linearity, and non-proportionality. The CsCu2I3 SC grown for this study exhibits a comparable light output of ~20000 ph/MeV to those grown using inverse temperature crystallization (ITC), as reported in the literature. However, the energy resolution reported in this study (11.57% at 662 keV) is better than the values reported for ITC-grown crystals in the literature. GEANT4 simulation toolkit has been used to perform the simulations, and the simulated intrinsic photopeak efficiencies for different volumes of CsCu2I3 scintillator have been obtained and compared with NaI:Tl and bismuth germanate (BGO) scintillators.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3169-3177"},"PeriodicalIF":1.9,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic Hardware Defense for High-Centrality Nodes in Graph Convolutional Networks 图卷积网络中高中心性节点的动态硬件防御

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-08-04 DOI: 10.1109/TNS.2025.3595388

Chang Cai;Peiyu Li;Wangshen Wen;Zeqi Huang;Youming Peng;Minchi Hu;Zehao Wu;Lei Shen;Jing Zhang

{"title":"Dynamic Hardware Defense for High-Centrality Nodes in Graph Convolutional Networks","authors":"Chang Cai;Peiyu Li;Wangshen Wen;Zeqi Huang;Youming Peng;Minchi Hu;Zehao Wu;Lei Shen;Jing Zhang","doi":"10.1109/TNS.2025.3595388","DOIUrl":"https://doi.org/10.1109/TNS.2025.3595388","url":null,"abstract":"With the growing reliance on graph data processing in safety-critical applications, ensuring the reliability of graph convolutional network (GCN) hardware systems has become paramount, especially in radiation-prone environments where single-event upsets (SEUs) pose significant risks. This article presents a comprehensive design framework for a fault-tolerant GCN system, addressing the unique challenges of SEU susceptibility through a novel fault-aware centrality measure and a dynamic hardware defense (DHD) strategy. Our approach begins with the development of a fault-aware centrality measure to precisely model the distribution of critical nodes within graph data. Leveraging this measure, we design a DHD strategy that integrates partial circuit reinforcement and high-centrality node marking, which dynamically route the dataflow of the most influential nodes in the graph to reinforced circuit units. The proposed system architecture is rigorously validated through extensive experiments, demonstrating significant improvements in fault tolerance. Specifically, the DHD strategy achieves improvements in hardening efficiency of <inline-formula> <tex-math>$2.53times $ </tex-math></inline-formula>, <inline-formula> <tex-math>$2.70times $ </tex-math></inline-formula>, and <inline-formula> <tex-math>$2.85times $ </tex-math></inline-formula>, respectively, compared with the traditional full triple modular redundancy (FTMR) strategy. Neutron radiation testing further validates the robustness of the system, showing effective mitigation of fault propagation under extreme conditions. By maintaining minimal hardware overhead and offering dynamic, cost-effective protection, this design framework provides a reliable solution for deploying GCNs in safety-critical applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3052-3063"},"PeriodicalIF":1.9,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modification of the Morphology and Light-Emitting Properties of InGaAs/GaAs Uncapped Quantum Dots by γ-Irradiation γ辐照对InGaAs/GaAs非封顶量子点形貌及发光性能的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-30 DOI: 10.1109/TNS.2025.3594156

Oksana M. Strilchuk;Galyna Yu. Rudko;Evgen G. Gule;Oksana S. Lytvyn;Volodymyr P. Maslov;Baolai Liang;Yuriy I. Mazur

{"title":"Modification of the Morphology and Light-Emitting Properties of InGaAs/GaAs Uncapped Quantum Dots by γ-Irradiation","authors":"Oksana M. Strilchuk;Galyna Yu. Rudko;Evgen G. Gule;Oksana S. Lytvyn;Volodymyr P. Maslov;Baolai Liang;Yuriy I. Mazur","doi":"10.1109/TNS.2025.3594156","DOIUrl":"https://doi.org/10.1109/TNS.2025.3594156","url":null,"abstract":"The influence of <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-irradiation on the morphology and light-emitting characteristics (intensity, peak position, and half-width of photoluminescence (PL) bands) of uncapped In<italic>xGa1-xAs/GaAs quantum dots (QDs) grown on GaAs (100) substrates is studied. The radiation doses varied in the 1–<inline-formula> <tex-math>$10^{3}$ </tex-math></inline-formula> kGy range. It is found that the average size of QDs increases and the surface density of QDs decreases as the radiation dose rises. Irradiation with low doses of <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-quanta improves the luminescence intensity of the samples due to the low-dose effect. Intensity increase at higher-dose irradiation is explained by enhancing transfer of carriers from the wetting layer (WL) to QDs via radiation-induced defect levels. The spectral position of QDs luminescence band remains unaltered or weakly blue-shifts under irradiation that is explained by the counter-play of two effects: growth of the average sizes of QDs and out-diffusion of indium from QDs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3064-3068"},"PeriodicalIF":1.9,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a Multichannel, 14-bit, 3-MS/s Hybrid ADC Based on SAR-TDC Two-Stage Conversion for Dark Matter Particle Detection 基于SAR-TDC两级转换的多通道14位3 ms /s混合ADC用于暗物质粒子检测的设计

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-30 DOI: 10.1109/TNS.2025.3590195

Chunyang Yu;Boyuan Yang;Jingsi Cheng;Hongjiao Dong;Zhengyu Ren;Guini Zhao;Chen Zhao;Yi Qian;Wu Gao

{"title":"Design of a Multichannel, 14-bit, 3-MS/s Hybrid ADC Based on SAR-TDC Two-Stage Conversion for Dark Matter Particle Detection","authors":"Chunyang Yu;Boyuan Yang;Jingsi Cheng;Hongjiao Dong;Zhengyu Ren;Guini Zhao;Chen Zhao;Yi Qian;Wu Gao","doi":"10.1109/TNS.2025.3590195","DOIUrl":"https://doi.org/10.1109/TNS.2025.3590195","url":null,"abstract":"The precision charge measurement of a gamma ray radiation detector consisting of scintillation crystals coupled with photomultiplier tubes (PMTs) is critical in the dark matter particle detection application. A high-resolution high-speed analog-to-digital converter (ADC) is required to digitize the amplitude of the generated pulse signals from the front-end readout electronics. In this article, we propose a novel hybrid ADC based on two-stage conversion to achieve high resolution and high sampling rate, and the key design technique of this ADC lies in optimizing the combination of successive approximation register (SAR) and time-to-digital converter (TDC) accuracy through system-level performance evaluation, ultimately achieving a high energy-efficiency ratio. A 14-bit hybrid ADC, which is composed of a 5-bit SAR, a 4-bit coarse TDC, and a 5-bit fine TDC, is proposed. A 16-channel prototype chip is designed in a 180-nm CMOS process with a 1.8/3.3 V power supply voltage. The die size is <inline-formula> <tex-math>$2850times 3350~mu text {m}$ </tex-math></inline-formula>. A sampling rate of 3 MS/s is achieved at the clock frequency of 100 MHz, and the power consumption is 1.6 mW per channel. With the digital calibration, the proposed ADC achieves the differential nonlinearity (DNL) of +0.67/-0.58 LSB, the integral nonlinearity (INL) of +2.3/-0.91 LSB, the spurious free dynamic range (SFDR) of 81.59 dB, the effective number of bits (ENOB) of 11.22 bits, and the Figure of Merit (FoM) of 223.58 fJ/conv per channel.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3145-3154"},"PeriodicalIF":1.9,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design, Modeling, and Characterization of a Floating Gate Dosimeter in Standard CMOS Technology for Sensor Reuse 用于传感器重用的标准CMOS技术浮门剂量计的设计、建模和表征

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-30 DOI: 10.1109/TNS.2025.3594306

T. Daros;N. C. Cábia;J. Piteira;M. C. Schneider

引用次数: 0

Heavy-Ion Effects in SiC Power MOSFETs With Different Gate Oxide Thicknesses 不同栅氧化层厚度SiC功率mosfet中的重离子效应

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-28 DOI: 10.1109/TNS.2025.3593241

Yuzhu Liu;Shiwei Zhao;Pengfei Zhai;Teng Zhang;Yu Dong;Jie Liu

引用次数: 0

The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology 每晶体管翅片数对12LP FinFET技术TID响应的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-24 DOI: 10.1109/TNS.2025.3589259

Trace Wallace;Nathaniel A. Dodds;Aldo I. Vidana;R. Nathan Nowlin;B. Dodd;H. J. Barnaby;M. Spear;J. Neuendank;Jeffrey S. Kauppila;Timothy D. Haeffner;Grant D. Poe;Sean T. Vibbert;Lloyd W. Massengill;J. L. Taggart;B. Foran;Stefano Bonaldo

{"title":"The Effect of Number of Fins per Transistor on the TID Response of 12LP FinFET Technology","authors":"Trace Wallace;Nathaniel A. Dodds;Aldo I. Vidana;R. Nathan Nowlin;B. Dodd;H. J. Barnaby;M. Spear;J. Neuendank;Jeffrey S. Kauppila;Timothy D. Haeffner;Grant D. Poe;Sean T. Vibbert;Lloyd W. Massengill;J. L. Taggart;B. Foran;Stefano Bonaldo","doi":"10.1109/TNS.2025.3589259","DOIUrl":"https://doi.org/10.1109/TNS.2025.3589259","url":null,"abstract":"This article presents an analysis of the total ionizing dose (TID) response of n-channel transistors in the 12LP fin-based field effect transistor (FinFET) technology, with a focus on the impact of fin count per transistor. Previous studies, such as those by Vidana (2023), have shown increased <sc>off-state current (<inline-formula> <tex-math>$I_{text {DS}-text {off}}$ </tex-math></inline-formula>) in n-channel FinFETs caused by charge buildup in shallow trench isolation (STI) oxides. However, these trends vary based on the number of fins used in the device. This work introduces a physics-based data-driven model supported by TCAD simulations to explain the fin count dependence on TID response. The model identifies variability in charge trapping in different STI regions, specifically highlighting the role of silicon nitride layers in mitigating leakage in devices with two or fewer fins. This research not only corroborates prior findings but also provides new insights into the electrostatic sensitivities unique to nanoscale FinFETs, offering a better understanding of TID effects and potential device hardening strategies.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2317-2323"},"PeriodicalIF":1.9,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design, Fabrication, and Cold Test of a High-Efficiency C-Band Traveling-Wave Accelerating Structure 高效c波段行波加速结构的设计、制造与冷态试验

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-23 DOI: 10.1109/TNS.2025.3591648

Yihao Zhang;Zhicheng Huang;Yelong Wei;Li Sun;Zexin Cao;Chengzhe Wang;Guangyao Feng;Luigi Faillace;David Alesini

{"title":"Design, Fabrication, and Cold Test of a High-Efficiency C-Band Traveling-Wave Accelerating Structure","authors":"Yihao Zhang;Zhicheng Huang;Yelong Wei;Li Sun;Zexin Cao;Chengzhe Wang;Guangyao Feng;Luigi Faillace;David Alesini","doi":"10.1109/TNS.2025.3591648","DOIUrl":"https://doi.org/10.1109/TNS.2025.3591648","url":null,"abstract":"To implement the linear injector for the proposed Jinhua light source (JHLS) project, a 1-m C-band constant gradient (CG) traveling-wave (TW) accelerating structure is developed with the aim of generating a gradient of <inline-formula> <tex-math>$geq 40$ </tex-math></inline-formula> MV/m. This C-band structure works at a mode of <inline-formula> <tex-math>$3pi $ </tex-math></inline-formula>/4 with a relatively low group velocity varying from <inline-formula> <tex-math>$0.016c$ </tex-math></inline-formula> to <inline-formula> <tex-math>$0.009c$ </tex-math></inline-formula> to increase the accelerating gradient at a given input power. It employs a cell shape with elliptical irises and circular arc tops to reduce the surface electric and magnetic fields and to achieve an average shunt impedance of 94 M<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>/m through optimizations. This results in an accelerating gradient of 40 MV/m with an input power of 29.6 MW, which means this structure can convert the input power into the accelerating gradient with a high efficiency. Moreover, a new technique is utilized for the design of couplers, significantly simplifying the whole optimization process and achieving high accuracy. After fabrication, the structure was precisely tuned, and results from low-power radio frequency (RF) measurements and the comparison with simulated values are also presented in this article.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2868-2876"},"PeriodicalIF":1.9,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11091508","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Heavy Ion Radiation on Electrical Performance of AlGaN/GaN HEMTs in Non-Gate Region 重离子辐射对非栅区AlGaN/GaN hemt电性能的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-22 DOI: 10.1109/TNS.2025.3591512

Hao Jiang;Xiaodong Xu;Tao Ying;Xueqiang Yu;Jianqun Yang;Rui Chen;Yanan Liang;Xingji Li

{"title":"Effect of Heavy Ion Radiation on Electrical Performance of AlGaN/GaN HEMTs in Non-Gate Region","authors":"Hao Jiang;Xiaodong Xu;Tao Ying;Xueqiang Yu;Jianqun Yang;Rui Chen;Yanan Liang;Xingji Li","doi":"10.1109/TNS.2025.3591512","DOIUrl":"https://doi.org/10.1109/TNS.2025.3591512","url":null,"abstract":"This study employs different types and energies of heavy ions to irradiate AlGaN/GaN high electron mobility transistors (HEMTs), inducing defects with a non-uniform depth distribution in the GaN epitaxial layer beneath the non-gate region. By integrating experimental and simulation approaches, we investigate the variation patterns of the device’s electrical performance as a function of irradiation fluence. Through electrical performance testing and simulations using extreme-environment radiation effect technology computer aided design (ERETCAD) software, it was observed that heavy ion-induced damage is confined to the GaN epitaxial layer beneath the non-gate region, the saturated drain current (<inline-formula> <tex-math>${I} _{mathbf {ds}}$ </tex-math></inline-formula>) decreases with increasing irradiation fluence, and the threshold voltage (<inline-formula> <tex-math>${V} _{mathbf {th}}$ </tex-math></inline-formula>) of the device remains unchanged. Heavy ion radiation introduces displacement defects in the GaN layer, and as the distance from the 2-D electron gas (2DEG) increases, the Coulomb scattering effect of these defects on carriers diminishes. Consequently, by accounting for the scattering effects of radiation-induced charged defects on carriers, the traditional non-ionizing energy loss (NIEL) value is refined. This adjustment leads to an equivalent degradation phenomenon where the <inline-formula> <tex-math>${I} _{mathbf {ds}}$ </tex-math></inline-formula> under different heavy ion irradiations correlates with the total effective non-ionizing energy deposition (TNID<inline-formula> <tex-math>${}_{mathbf {effective}}$ </tex-math></inline-formula>).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 9","pages":"3044-3051"},"PeriodicalIF":1.9,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145090141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conference Comments by the Editors 编者对会议的评论

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-07-21 DOI: 10.1109/TNS.2025.3587506

Mauro Fasoli;Anna Vedda;Federico Moretti;Guillaume Bertrand;Maksym Buryi;Francesca Cova;Loris Martinazzoli;Jan Pejchal

引用次数: 0