IEEE Transactions on Nuclear Science最新文献

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Recognition of Residual Cores in Aero-Engine Blade Neutron Images Using Improved Patch SVDD 基于改进Patch SVDD的航空发动机叶片中子图像残核识别
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-14 DOI: 10.1109/TNS.2025.3560274
Yang Wu;Zhikai Yang;Hongchao Yang;Yong Sun;Bin Tang;Xianguo Tuo;Wei Yin;Qibiao Wang
{"title":"Recognition of Residual Cores in Aero-Engine Blade Neutron Images Using Improved Patch SVDD","authors":"Yang Wu;Zhikai Yang;Hongchao Yang;Yong Sun;Bin Tang;Xianguo Tuo;Wei Yin;Qibiao Wang","doi":"10.1109/TNS.2025.3560274","DOIUrl":"https://doi.org/10.1109/TNS.2025.3560274","url":null,"abstract":"The recognition of residual cores in aero-engine blades is a crucial task in ensuring the safety and reliability of aircraft. Compared to techniques such as borescope and X-ray radiography, neutron radiography, with its strong penetration ability and high sensitivity to light elements, can detect residual cores as thin as 2 mm within complex cavities. This significantly enhances the detection rate of residual cores in aero-engine blades. However, the recognition of residual cores in neutron images currently relies heavily on manual inspection by professionals, which is subjective and inefficient. To address this issue, an improved residual core recognition method based on a patch-level support vector data description (Patch SVDD) algorithm is proposed for neutron images. This study employs an improved gamma transformation to enhance the quality of neutron images and highlight the features of aero-engine blades. A fusion of dilated residual network (DRN) and efficient channel attention (ECA) serves as the feature extraction network in Patch SVDD, improving the capability of feature extraction. Additionally, a residual core grading module is designed to improve core leaching efficiency in production. Neutron images of aero-engine blades were acquired through the reactor-based cold neutron radiography facility (CNRF) to construct a dataset. The results demonstrate that this improved method achieves areas under the receiver operating characteristic curves (AUCs) of 94.8% at the image level and 95.6% at the pixel level, indicating its favorable recognition efficacy. This study provides an intelligent method for quality monitoring in aero-engine blades.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1663-1671"},"PeriodicalIF":1.9,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of F-Doped Silica Fiber Under High Ionizing Radiation Exposure 高电离辐射下掺f硅光纤的性能研究
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-11 DOI: 10.1109/TNS.2025.3559897
Dajuan Lyu;Gaowei Cao;Fei Wang;Qing Huang;Guilin Zhang;Qiao Chen;Jia Liu;Minghong Yang
{"title":"Performance of F-Doped Silica Fiber Under High Ionizing Radiation Exposure","authors":"Dajuan Lyu;Gaowei Cao;Fei Wang;Qing Huang;Guilin Zhang;Qiao Chen;Jia Liu;Minghong Yang","doi":"10.1109/TNS.2025.3559897","DOIUrl":"https://doi.org/10.1109/TNS.2025.3559897","url":null,"abstract":"This work investigates the radiation-induced attenuation (RIA) performance of F-doped silica core single-mode fibers (Si-SMFs) under high ionizing radiation exposure. The Si-SMFs were fabricated using plasma chemical vapor deposition (PCVD) with a triple-cladding design to minimize internal stress. Throughout two distinct types of radiation exposure experiments, the spatial distribution and temporal evolution of RIA at telecommunication wavelengths of 1310 and 1550 nm were monitored in real-time using an optical time-domain reflectometer (OTDR). Upon completion of the initial irradiation cycle, characterized by a dose rate of 1.25 Gy(SiO2)/s and a total dose of 1 MGy(SiO2) at room temperature (RT), the RIA values for the sample fibers reached approximately 14.43 dB/km at 1310 nm and 22.81 dB/km at 1550 nm. Notably, the F-doped fibers exhibited superior RIA performance at the shorter wavelength (1310 nm) when the accumulated dose exceeded 40.5 kGy(SiO2) (<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays, at RT). After the second irradiation phase, the RIA values decreased to approximately 7.27 dB/km at 1310 nm and 14.38 dB/km at 1550 nm. This study sheds light on the attenuation characteristics of F-doped silica fibers under high ionizing radiation and their variation with radiation dose, providing valuable insights for the application of optical fibers in radiation environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1698-1705"},"PeriodicalIF":1.9,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic Bayesian Network Modeling of Component-Level Radiation Effects’ Impact on System Performance 组件级辐射效应对系统性能影响的动态贝叶斯网络建模
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-10 DOI: 10.1109/TNS.2025.3559479
Zhaofeng Zhen;Tao Ying;Xiaodong Xu;Jianqun Yang;Shangli Dong;Xingji Li
{"title":"Dynamic Bayesian Network Modeling of Component-Level Radiation Effects’ Impact on System Performance","authors":"Zhaofeng Zhen;Tao Ying;Xiaodong Xu;Jianqun Yang;Shangli Dong;Xingji Li","doi":"10.1109/TNS.2025.3559479","DOIUrl":"https://doi.org/10.1109/TNS.2025.3559479","url":null,"abstract":"Awareness of the impact of component-level radiation response on the system is challenging. This article discusses the radiation response of a power supply system by combining the power converters’ radiation effects and the dynamic Bayesian network (DBN) model. The total ionizing dose (TID) effects, displacement damage (DD) effects, and single event effects (SEEs) of the power converters are studied by conducting Co-<inline-formula> <tex-math>$60~gamma $ </tex-math></inline-formula>-ray, protons, and heavy ion tests, respectively. Then, the possible fault propagation models in the power supply system are analyzed, and a DBN structure is constructed based on these models. The variations of each part in the power supply system during the mission time are predicted. Finally, the DBN model is verified through the irradiation test results of the power supply system.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1734-1740"},"PeriodicalIF":1.9,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Further Exploration in Displacement Damage Correlation of Neutrons and Si Ions in VPNP BJTs VPNP BJTs中中子与Si离子位移损伤相关性的进一步探索
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-09 DOI: 10.1109/TNS.2025.3559067
Kai Wang;Yang Song;Jianqun Yang;Zhaofeng Zhen;Zhengfeng Bai;Xingji Li
{"title":"Further Exploration in Displacement Damage Correlation of Neutrons and Si Ions in VPNP BJTs","authors":"Kai Wang;Yang Song;Jianqun Yang;Zhaofeng Zhen;Zhengfeng Bai;Xingji Li","doi":"10.1109/TNS.2025.3559067","DOIUrl":"https://doi.org/10.1109/TNS.2025.3559067","url":null,"abstract":"This study systematically examines the equivalence of displacement radiation damage in vertical p-n-p (VPNP) bipolar transistors between 1-MeV neutron-equivalent and multi-energy silicon ion irradiation environments through the development of an enhanced non-ionizing energy loss (NIEL) calculation methodology. A comparative irradiation study was performed on identical VPNP bipolar transistors from the same production batch, employing both neutron irradiation and silicon ion bombardment at varying energy levels. Depth-dependent NIEL distributions were numerically simulated for both radiation species, enabling precise extraction of total non-ionizing dose (TNID) deposition in the base region per unit fluence. Analysis of radiation-induced electrical degradation demonstrates that the inverse current gain variation in bipolar transistors exhibits approximate adherence to the Messenger-Spratt equation when correlated with TNID. However, the NIEL methodology fails to establish a direct displacement damage correlation between different particle species. Comparative deep-level transient spectroscopy (DLTS) characterizations following neutron and 30-MeV silicon ion irradiation reveal three identical defect types induced by both radiation sources while demonstrating significant ionization damage interference in displacement defect formation during 30-MeV silicon irradiation. Notably, the refined NIEL methodology achieves remarkable consistency in correlating silicon ion and neutron radiation damage data, with linear fitting analysis yielding Pearson correlation coefficients exceeding 0.99. This validation confirms the improved predictive capability of the proposed NIEL framework for multi-particle radiation damage equivalence assessment.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1718-1725"},"PeriodicalIF":1.9,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Radiation Shielding Composite Materials Tailored for Space Mission Applications 适合航天任务应用的辐射屏蔽复合材料的优化
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-08 DOI: 10.1109/TNS.2025.3558902
Yu Han;Tao Ying;Jianqun Yang;Yang Zhao;Xingji Li
{"title":"Optimization of Radiation Shielding Composite Materials Tailored for Space Mission Applications","authors":"Yu Han;Tao Ying;Jianqun Yang;Yang Zhao;Xingji Li","doi":"10.1109/TNS.2025.3558902","DOIUrl":"https://doi.org/10.1109/TNS.2025.3558902","url":null,"abstract":"New composite materials are more suitable for radiation shielding in space applications compared to multilayer materials as the differing thermal expansion coefficients between layers make multilayer materials more susceptible to damage in the alternating hot and cold conditions of space. These advanced composites are designed with various material systems each optimized to provide distinct shielding properties against electron and proton radiation. The energy spectra of radiation particles vary significantly across different orbital missions affecting the shielding performance of these materials. This study employs a forward Monte-Carlo (FMC) simulation approach initially compared by the ground-based experiments. The shielding effectiveness of different composite material solutions is then simulated allowing for comparison across various orbital radiation environments and doses and evaluating the performance advantages of distinct material systems in specific orbits. This research has shown that the design of radiation shielding materials is a complex engineering process influenced by multiple factors. It requires the material system to be designed based on the shielding properties of different elements considering factors such as the radiation environment characteristics of the mission orbit, areal mass, and the threshold for total ionizing dose (TID) hardness assurance. Composites for missions in the medium Earth orbit (MEO) and geostationary orbit (GEO) prioritize enhancing electron shielding performance. Meanwhile, the distinct radiation environment characteristics of the low Earth orbit (LEO), low polar Earth orbit (LPEO), and equatorial MEO (EMEO) demand material solutions of optimal designs tailored to specific conditions. The results show that the simulation-driven quantitative approach enables precise designs that ensure reliability while minimizing costs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1790-1799"},"PeriodicalIF":1.9,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on the Gamma-Rays Induced Radiation Damage Effect of LaBr₃:Ce and CeBr₃ Crystals LaBr₃:Ce和CeBr₃晶体γ射线致辐射损伤效应的研究
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-03 DOI: 10.1109/TNS.2025.3557388
Chen Peng;Yi Lu;Chunsheng Zhang;Xinlong Yan;Yuzhen Jia;Kan Zhang;Ruichen Wang;Weiheng Duan;Weimin He;Weihu Yang;Hetong Han;Zhaohui Song;Fan Yang
{"title":"Investigation on the Gamma-Rays Induced Radiation Damage Effect of LaBr₃:Ce and CeBr₃ Crystals","authors":"Chen Peng;Yi Lu;Chunsheng Zhang;Xinlong Yan;Yuzhen Jia;Kan Zhang;Ruichen Wang;Weiheng Duan;Weimin He;Weihu Yang;Hetong Han;Zhaohui Song;Fan Yang","doi":"10.1109/TNS.2025.3557388","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557388","url":null,"abstract":"This work investigates gamma-rays induced radiation damage effect in LaBr3:Ce and CeBr3 crystals. Optical and scintillation properties of these crystals were characterized before and after irradiation up to <inline-formula> <tex-math>$2times 10^{6}$ </tex-math></inline-formula> rad. The recovery of radiation damage was observed in both crystals. After the crystals were irradiated at various dose rates, it was confirmed that the radiation damage saturation cannot be attributed to the dose rate dependent effect. After the irradiation up to <inline-formula> <tex-math>$2times 10^{6}$ </tex-math></inline-formula> rad, the loss of emission-weighted longitudinal transmittance (EWLT) values is approximately 4.7% for LaBr3:Ce and 6.0% for CeBr3. Meanwhile, the light yield (LY) loss of LaBr3:Ce and CeBr3 crystals is approximately 12.3% and 11.6%, respectively. The excellent correlation between EWLT loss and LY loss indicates that the LY degradation in both crystals can be mainly attributed to the loss of transmittance. The deterioration of energy resolution (ER) after 2-Mrad irradiation ranges from 5.1% to 6.7% for LaBr3:Ce and from 8.7% to 9.5% for CeBr3. The decay time is not affected by radiation damage. Compared with other scintillation crystals, LaBr3:Ce and CeBr3 crystals are radiation hard. These findings provide important insights into the behavior of these materials working in severe radiation environments, which is essential for their applications and production.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1763-1767"},"PeriodicalIF":1.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement on Analysis Method for X-Ray Arrival Spectrum From High-Altitude Nuclear Detonation 高空核爆x射线到达光谱分析方法的改进
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-03-27 DOI: 10.1109/TNS.2025.3554347
Yanbin Wang;Wei Liu;Xiaoqiang Li;Linhe Du;Dinghan Zhu;Yunfei Zhu;Shuang Zhang;Xiong Zhang
{"title":"Improvement on Analysis Method for X-Ray Arrival Spectrum From High-Altitude Nuclear Detonation","authors":"Yanbin Wang;Wei Liu;Xiaoqiang Li;Linhe Du;Dinghan Zhu;Yunfei Zhu;Shuang Zhang;Xiong Zhang","doi":"10.1109/TNS.2025.3554347","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554347","url":null,"abstract":"The study of the X-ray arrival spectrum of high-altitude nuclear detonation (HAND) shows that analytical methods offer advantages over Monte Carlo methods in terms of computation speed and the ability to invert the nuclear detonation source term. However, analytical methods have lower accuracy in calculating scattered X-rays in the spectrum arriving at the detector. To address this issue, an analytical method for correcting the X-ray arrival spectrum of HAND is proposed. This study employs a combined blackbody spectrum instead of a single blackbody spectrum to more accurately characterize the spectrum of the X-ray source from a hydrogen bomb detonation. A double-exponential fitting method is used instead of linear interpolation to obtain a more precise mass attenuation coefficient. Correction coefficients derived from Monte Carlo simulations to calibrate the arrival spectrum were corrected by the build-up factor (BUF). In the 2–130-keV energy range, the maximum relative errors between the Monte Carlo arrival spectrum and both the uncorrected for scattering and BUF-corrected arrival spectra are 84.9% and 100.2%, respectively. The proposed method reduces relative errors to within 15%, with a minimum error of less than 0.001%. In addition, its computation time is only 1/39600 of that of the Monte Carlo method. The proposed method provides a solid basis for designing, calibrating space-borne X-ray detectors and inverting the nuclear detonation yield.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1706-1717"},"PeriodicalIF":1.9,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10943253","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET JFET区域对SiC功率MOSFET中重离子诱导栅损伤的影响
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-03-27 DOI: 10.1109/TNS.2025.3555307
Manyi Ji;Na Ren;Yanjun Li;Zhengjia Chen;Hongyi Xu;Kuang Sheng;Xin Wan;Hu Jin;Jun Xu
{"title":"Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET","authors":"Manyi Ji;Na Ren;Yanjun Li;Zhengjia Chen;Hongyi Xu;Kuang Sheng;Xin Wan;Hu Jin;Jun Xu","doi":"10.1109/TNS.2025.3555307","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555307","url":null,"abstract":"Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and simulation. This study verified the strong influence of width and doping concentration of the JFET region of a SiC MOSFET on the sensitivity to heavy-ion-induced gate damage, including LGD and SELC related to gate damage. Failure analysis was conducted to confirm the damage in the gate oxide. Heavy-ion transient technology computer aided design (TCAD) simulations were carried out to confirm the impact of maximum gate oxide electric field during irradiation on gate damage and type of single-event effects (SEEs). This study also provides a feasible way to harden SiC MOSFETs in a radiation environment by reducing the maximum gate oxide electrical field during exposure to heavy ions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1726-1733"},"PeriodicalIF":1.9,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Event Effect on SiC MOSFETs With Junction Barrier Schottky Diode Structures 结势垒肖特基二极管结构SiC mosfet的单事件效应
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-03-26 DOI: 10.1109/TNS.2025.3554907
Xinyu Li;Feng He;Xiping Niu;Xintian Zhou;Ling Sang;Yawei He;Yunpeng Jia;Rui Jin
{"title":"Single Event Effect on SiC MOSFETs With Junction Barrier Schottky Diode Structures","authors":"Xinyu Li;Feng He;Xiping Niu;Xintian Zhou;Ling Sang;Yawei He;Yunpeng Jia;Rui Jin","doi":"10.1109/TNS.2025.3554907","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554907","url":null,"abstract":"This article investigates the single event effects (SEEs) in SiC MOSFETs integrated with a junction barrier diode [MOSFET integrated with JBS structure (JMOS)]. During irradiation experiments, JMOS exhibited drain-to-source leakage current degradation and ultimately experienced burnout as the drain voltage increased. However, the gate leakage current remained almost unchanged throughout the irradiation process but increased under the post-irradiation gate stress (PIGS) test. The anatomical analysis demonstrated that the deformation of ohmic contact metal and the generation of gate oxide voids in the active region were the causes of failures. By employing Sentaurus technical computer-aided design (TCAD) simulation tools, hot spots were concentrated at ohmic metal corners when the heavy ions struck in the middle of the JFET region in the junction barrier Schottky diode (JBS) structure. In addition, a remarkable increase in the maximum oxide electric field strength was observed when the injection position was located in the middle of the JFET region, which led to the potential damage of the oxide layer, resulting in the final failure under the PIGS test. Therefore, different from conventional SiC JBS and MOSFET devices, JMOS exhibited a unique failure mechanism arising from the synergistic interaction between both JBS and MOSFET cell structures.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1748-1754"},"PeriodicalIF":1.9,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High Precision Time Measurement Method Based on Frequency-Domain Phase-Fitting for Nuclear Pulse Detection 核脉冲检测中一种基于频域相位拟合的高精度时间测量方法
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-03-26 DOI: 10.1109/TNS.2025.3554967
Jianjun Wang;Zhaohui Bu;Zhao Wang;Jincheng Xu;Liguo Zhou;Qibin Zheng
{"title":"A High Precision Time Measurement Method Based on Frequency-Domain Phase-Fitting for Nuclear Pulse Detection","authors":"Jianjun Wang;Zhaohui Bu;Zhao Wang;Jincheng Xu;Liguo Zhou;Qibin Zheng","doi":"10.1109/TNS.2025.3554967","DOIUrl":"https://doi.org/10.1109/TNS.2025.3554967","url":null,"abstract":"This article proposes a high-precision time measurement method based on digital frequency-domain phase-fitting (DFPF) by using digitized nuclear pulses. The averaging effect inherent in the frequency-domain cross correlation and phase-fitting processes effectively minimizes measurement errors, thereby ensuring high precision and resolution in time interval measurements. In this article, the theory of this DFPF-based time measurement method is analyzed, and an electronics prototype is designed to validate the feasibility of the proposed method by utilizing analog-to-digital converters (ADCs) for pulse digitization and a field-progammable gate array for phase fitting implementation. The test results indicate that under ideal conditions with a signal-to-noise ratio (SNR) of 64 dB, this method achieves time measurement precisions of 50-, 18-, and 2.9-ps rms, corresponding to different Gaussian pulse widths and sampling rates of 118 ns at 40 MSPS, 10 ns at 100 MSPS, and 3 ns at 500 MSPS, respectively. The precision improves with increasing pulse bandwidth. Furthermore, in practical cosmic ray tests, the method achieved favorable timing performance with a precision of 1.7-ns rms. These results demonstrate that this proposed method has the potential to be a high-precision time measurement for particle detection and is equally applicable to other advanced time measurement scenarios.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1819-1827"},"PeriodicalIF":1.9,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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