IEEE Transactions on Nuclear Science最新文献

{"title":"Adaptive High-Precision Drift Calibration for Gamma-Ray Spectra in Geochemical Logging","authors":"Jiahao Wang;Changlin Lan;Gong Jiang;Hongliang Wu;Zhou Feng;Fanmin Zeng;Juntao Liu","doi":"10.1109/TNS.2026.3734090","DOIUrl":"https://doi.org/10.1109/TNS.2026.3734090","url":null,"abstract":"In geochemical logging, spectrum drift of gamma-ray spectra can significantly affect the accuracy of elemental analysis. If the measured spectra exhibit pronounced statistical fluctuations, the calibration accuracy may be further affected. To address this issue, an adaptive gamma-ray spectra drift calibration technique is proposed. The technique improves statistical precision by performing adaptive spectral summation within short depth intervals and carries out preliminary calibration by extracting characteristic gamma-ray peaks associated with H, Si, Ca, and Fe. Based on the preliminary deconvolution results, suitable gamma-ray peaks for drift correction are adaptively selected to complete the final drift calibration. Field logging data demonstrate that the proposed technique accurately identifies peaks and corrects spectral drift. After spectral calibration for two wells, the deconvolved elemental yield curves closely match the reference curves, with mean reduced chi-square values of 1.055 and 0.952, respectively. These results show that the technique achieves accurate drift correction under low-statistics conditions and provides calibrated spectra suitable for full-spectrum analysis. This technique further enhances the precision of elemental yield estimation and the dependability of later geological interpretation. Additionally, by replacing the response matrix and marker elements, the technique can be adapted for gamma-ray spectra drift calibration in other applications based on full-spectrum analysis.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4110-4119"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron-Irradiation Effects on 2--D Au/PdSe2/Graphene Heterojunction-Based Optoelectronic Synapse","authors":"Hui Peng;Pengfei Hou","doi":"10.1109/TNS.2026.3735767","DOIUrl":"https://doi.org/10.1109/TNS.2026.3735767","url":null,"abstract":"2-D optoelectronic synapses with high-speed and efficient information processing capacity have laid a crucial foundation for next-generation sensing and computing systems. However, device performance is highly dependent on the internal defect states of 2-D heterojunctions. Electron irradiation, a typical extreme environmental condition, easily induces intrinsic defects in 2-D materials, disrupting heterojunction photoelectric transport properties and significantly modulating or degrading synaptic behaviors. Thus, it is essential to clarify the evolution process and physical mechanism of electron irradiation effects on 2-D heterojunction-based optoelectronic synapses to provide theoretical and technical support for their applications in extreme radiation environments. In this work, a 10-kV electron-beam irradiation is applied to an Au/PdSe₂/graphene (Gr) heterojunction-based optoelectronic synapse, and its synaptic performance evolution during room-temperature annealing is systematically investigated. Experimental results show that under reverse bias, the heterojunction postsynaptic current (PSC) exhibits distinct variations with prolonged annealing time. At fixed bias, both forward and reverse dark currents rise synchronously compared with the preirradiation initial state, while the paired-pulse facilitation (PPF) index trend remains nearly unchanged throughout annealing. In addition, under forward bias, 48-h annealing partially restores the PSC peak and shortens the corresponding PSC relaxation time. Furthermore, tests confirm that postannealing low-pressure treatment enables partial, reversible recovery of the electrical performance degradation caused by physical adsorption at defect sites.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"3972-3980"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Synchronous Damage Induced by Heavy Ions on Single-Event Burnout in Fast Recovery Diodes","authors":"Ailin Qiu;Xiaoping Dong;Mingmin Huang;Yao Ma;Zhimei Yang;Yun Li;Min Gong","doi":"10.1109/TNS.2026.3728784","DOIUrl":"https://doi.org/10.1109/TNS.2026.3728784","url":null,"abstract":"This article investigates the influence of synchronous damage induced by heavy ions along the ion track on single-event burnout (SEB) in fast recovery diodes (FRDs). The experimental results show that heavy ions with a higher linear energy transfer (LET) do not exhibit a significantly lower SEB voltage (<inline-formula> <tex-math>$V_{mathrm {SEB}}$ </tex-math></inline-formula>), contradicting the traditional prediction that <inline-formula> <tex-math>$V_{mathrm {SEB}}$ </tex-math></inline-formula> decreases with increasing LET. To clarify this phenomenon, an SEB experiment of a sample with protection against thermal failure is carried out, and the leakage current increased significantly (by 680 times) after irradiation, suggesting possible local synchronous damage along the ion track, which may introduce recombination centers and reduce the effective equivalent carrier lifetime during ion incidence. Based on this observation, the role of local synchronous damage in SEB is analyzed by combining experiments with 3-D TCAD simulations. The results suggest that synchronous damage with a reduced local carrier lifetime may enhance recombination of excess carriers during ion incidence, thereby weakening avalanche multiplication and electrothermal positive feedback. Under high-LET irradiation, more serious synchronous damage may enhance local carrier removal and partially compensate for increased transient carrier generation, leading to weak LET dependence of <inline-formula> <tex-math>$V_{mathrm {SEB}}$ </tex-math></inline-formula> in the tested FRDs. These results indicate that localized damage induced by heavy ions should be considered in SEB analysis of FRDs, particularly under high-LET irradiation. This mechanism may also affect SEB of other power semiconductor devices, but its relevance requires further verification.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"3856-3865"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Dead-Time High-Precision Wave Union FPGA-Based Time-to-Digital Converters With Event-Aggregation Encoder","authors":"Yuchen Yang;Yiming Zeng;Yijun Cai;Wenhao Duan;Wei Peng;Changqing Feng","doi":"10.1109/TNS.2026.3725654","DOIUrl":"https://doi.org/10.1109/TNS.2026.3725654","url":null,"abstract":"The wave union (WU) method can improve the performance of time-to-digital converters (TDCs) by increasing the number of effective measurements per event, and has therefore been widely adopted in field-programmable gate array (FPGA)-TDC designs. However, the propagation requirement of the WU pulse train forces the tapped delay line (TDL) to span longer than one clock period, such that conventional encoders must introduce extra dead time to ensure correct decoding. This article presents a low-dead-time, high-precision FPGA-based TDC that combines a 4-edge WU-A scheme, dual sampling, and a resource-efficient event-aggregation encoder. With the proposed event-aggregation encoding, the WU edge positions associated with different events on the TDL are aggregated and encoded with negligible additional FPGA logic-resource usage, reducing the dead time of WU-based FPGA-TDCs to one clock cycle. In addition, to address the more severe bubble errors in advanced FPGA technology nodes, we apply clock-skew-aware placement constraints to optimize the TDL clock distribution. The optimized design achieves an equivalent bin width of 0.9 ps and an equivalent quantization error of 0.26 ps, improving the measured timing precision to 1.46–2.19 ps.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4139-4148"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Nuclear Science Information for Authors","authors":"","doi":"10.1109/TNS.2026.3742196","DOIUrl":"https://doi.org/10.1109/TNS.2026.3742196","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"C3-C3"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11741385","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Cascade-Breakdown Model for Heavy-Ion-Induced Oxide Failure Mechanisms in 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors","authors":"Shengrong Zhong;Jiubin Liu;Lyuzhang Peng;Lin Li;Ruoyun Cheng;Tongtong Xu;Hu Jin;Xin Wan;Guangwei Xu;Shibing Long;Xiaoping Wang;Sirui Feng;Feng He;Rui Jin;Hongfei Cao;Gang Lyu","doi":"10.1109/TNS.2026.3737147","DOIUrl":"https://doi.org/10.1109/TNS.2026.3737147","url":null,"abstract":"Single-event gate rupture (SEGR) remains a critical limitation for deploying silicon carbide (SiC) MOSFETs in space environments, due to the comparatively poor oxide quality and a limited process window for forming a robust, defect-lean dielectric on SiC bulk. This article systematically investigates the mechanism of heavy-ion-induced oxide breakdown in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. Conventional physics-based analyses of oxide breakdown typically rely on peak electric field criteria at a single point. To overcome this limitation and elucidate the local gate-oxide breakdown physics relevant to SEGR in SiC MOSFETs, we propose a novel cascade breakdown model comprising four sequential stages: electric field distortion induced by residual hole accumulation (Stage I), oxide thinning triggered by localized breakdown (Stage II), a reduction of the effective oxide thickness coupled with electric field superposition (Stage III), and ultimately, electric field runaway leading to the cascade breakdown behavior (Stage IV). An analytical expression for the peak electric field in the oxide during the thinning process is derived, yielding a refined SEGR failure criterion. In particular, by comparing the minimum peak electric field during oxide thinning with the intrinsic breakdown field, the recombination coefficient <inline-formula> <tex-math>$alpha $ </tex-math></inline-formula> was calibrated to be <inline-formula> <tex-math>$3 times 10 ^{-6}$ </tex-math></inline-formula> cm³/s. Furthermore, by incorporating energy deposition fluctuations into the proposed model, it is demonstrated that the calculated failure probability distribution of breakdown voltages agrees remarkably well with the experimental results obtained under Ta and Kr ion irradiation. Collectively, these findings deepen the microscopic understanding of the evolutionary mechanism of SEGR, providing critical insights for the radiation-hardened SiC MOS devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"3878-3890"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cluster Reconstruction Algorithm and FPGA Implementation for Pre-Research of the STCF ECAL L1 Trigger","authors":"Junchen Wang;Changqing Feng;Cheng Yang;Yining Bao;Zhujun Fang;Shubin Liu","doi":"10.1109/TNS.2026.3737135","DOIUrl":"https://doi.org/10.1109/TNS.2026.3737135","url":null,"abstract":"The Super Tau-Charm Facility (STCF) has been proposed as a next-generation electron-positron collider for particle physics in China. It is designed to operate at a luminosity significantly higher than that of the Beijing Electron Positron Collider II (BEPC II), requiring a robust trigger system to mitigate data-acquisition pressure. An electromagnetic calorimeter (ECAL) is a crucial sub-detector that provides information for the Level 1 (L1) trigger, but its clusters may merge due to the high-luminosity environment. Therefore, it is necessary to develop an appropriate algorithm to overcome the current challenges. To this end, this study presents a cluster reconstruction algorithm for the ECAL based on gradient descent segmentation (GDS). The proposed algorithm begins by designating the basic unit of a cluster, a trigger cell (TC), with the highest energy within its connected component as the initial candidate for a cluster center. Then, it searches for boundaries with gradient descent, achieving segmentation of overlapping clusters. Implemented on a Xilinx Kintex-UltraScale series FPGA, the proposed algorithm utilizes less than 50% of the total available resources. Within this constraint, it achieves a total delay below 150 ns, ensures cluster position reconstruction accuracy approaching 100%, and maintains cluster energy reconstruction accuracy higher than 99%.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4160-4170"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"LxA: A Flexible FPGA Acquisition Core for Timestamp-Based Triggered Readout","authors":"T. Costa de Paiva;V. Martinez-Outschoorn;D. Holcomb","doi":"10.1109/TNS.2026.3731086","DOIUrl":"https://doi.org/10.1109/TNS.2026.3731086","url":null,"abstract":"Particle physics experiments at the large hadron collider (LHC) require flexible, real-time data acquisition systems capable of processing multiple concurrent data streams with precise timing constraints. Existing solutions based on field-programmable gate array (FPGA) technology are often tailored to specific detector and trigger configurations, making them difficult to reuse as instruments and system requirements evolve. This article presents LxA, a payload-agnostic FPGA architecture for timestamp-based data selection and packet formatting in triggered readout systems. LxA offers extensive flexibility, including request-relative filtering windows with independently configurable opening, reference, and closing offsets, a tunable number of concurrent filtering windows, and configurable numbers and widths of input streams and output links. The architecture has been implemented in the ATLAS new small wheel (NSW) and monitored drift tube trigger processors (MDTTPs), which differ in the number and format of input data streams, the number of concurrent filtering windows, the timing characteristics of the data, and the type and number of output paths. These implementations show that LxA can be applied across distinct real-world trigger systems with substantially different requirements. A systematic resource study shows linear and predictable scaling of look-up table (LUT), flip-flop (FF), and LUT-based random access memory (LUTRAM) utilization with respect to key architectural parameters such as the number of concurrent filtering windows and the number of acquisition and readout streams. Together, these results indicate that LxA provides a reusable, scalable framework for FPGA-based data acquisition in high-energy physics experiments, and its open-source implementation under the CERN Open Hardware License enables adoption and extension by the broader community.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4129-4138"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a Position-Sensitive Monolithic Planar Scintillator for Gamma-Ray Imaging","authors":"Chengshuai Tian;Jian Yang;Guoqiang Zeng;Lie Ni;Xinyu Yang;Haowen Deng;Chuanhao Hu","doi":"10.1109/TNS.2026.3724193","DOIUrl":"https://doi.org/10.1109/TNS.2026.3724193","url":null,"abstract":"In the development of Compton cameras, traditional pixelated scintillator designs face escalating complexity and cost as detector size increases. To address this, a side-readout monolithic planar scintillator scheme is proposed, where silicon photomultiplier (SiPM) arrays are coupled to the four edges. This configuration maximizes the sensitive detection volume while significantly reducing the photodetector requirement from <inline-formula> <tex-math>$N^{2}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$4N$ </tex-math></inline-formula>. A prototype utilizing a <inline-formula> <tex-math>$96 times 96 times 6 ~text {mm}^{3}$ </tex-math></inline-formula> CsI(Tl) monolithic scintillator was constructed to achieve 2-D position sensing using only four electronic channels. To optimize performance, a geometric mean method was employed to correct energy peak drift caused by position-dependent signal variations. Furthermore, a neural network model was introduced to further improve position resolution. Experimental results with 662 keV gamma rays demonstrate a 2-D position resolution of approximately 4.5 mm and an average energy resolution of 7.1%. These findings confirm that the proposed design significantly reduces readout complexity without compromising the position and energy resolutions required for Compton imaging, offering a cost-effective solution for large-area gamma-ray imaging and radiation monitoring.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"4070-4081"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiple-Temperature Annealing of Dark Current in TDI CMOS Image Sensors: Anomalous Phenomena and Predictive Modeling","authors":"Junling Liu;Jie Feng;Bingkai Liu;Lin Wen;Zitao Zhao;Bo Chen;Qi Guo;Yu Song;Yudong Li","doi":"10.1109/TNS.2026.3733128","DOIUrl":"https://doi.org/10.1109/TNS.2026.3733128","url":null,"abstract":"Time delay integration CMOS image sensors (TDI CIS) used in space applications are susceptible to total ionizing dose (TID) effects. Investigating post-TID high-temperature annealing behavior is essential to elucidate the long-term evolution of ionization defects and to optimize accelerated testing protocols. In this work, systematic multi-temperature annealing experiments are conducted, revealing two anomalous dark current behaviors. First, at relatively low temperatures (<inline-formula> <tex-math>$25~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$150~^{circ }$ </tex-math></inline-formula>C), the dark current exhibits a nonmonotonic evolution, characterized by an initial increase [reverse annealing (RA)] followed by a decrease, with a more pronounced increase at higher temperatures. Second, in the high-temperature regime (<inline-formula> <tex-math>$200~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$230~^{circ }$ </tex-math></inline-formula>C), the dark current exhibits a monotonic decay, and the decay rate decreases at higher temperatures, contrary to conventional expectations. To interpret these phenomena, an analytical kinetic model is developed based on the generation and passivation of interface traps. The model preserves Arrhenius temperature dependence and incorporates stretched-exponential kinetics to account for the distributed nature of defect reactions. It quantitatively reproduces the experimental results over <inline-formula> <tex-math>$25~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$230~^{circ }$ </tex-math></inline-formula>C and provides a unified explanation of the observed anomalous behaviors. Furthermore, the model’s predicted annealing response at <inline-formula> <tex-math>$260~^{circ }$ </tex-math></inline-formula>C is experimentally verified, and the model’s generality is further supported by the annealing behavior in an independent CCD-on-CMOS device. These findings provide a theoretical basis and a practical framework for post-irradiation annealing analysis and radiation-test protocol design in TDI CIS and related image sensors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 10","pages":"3955-3961"},"PeriodicalIF":2.4,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149219376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}