IEEE Transactions on Nuclear Science最新文献_第3页

2024 Index IEEE Transactions on Nuclear Science Vol. 71

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-23 DOI: 10.1109/TNS.2025.3533397

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A Framework for Determining System-Level SEE Vulnerabilities in Wireless RF Receivers

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-23 DOI: 10.1109/TNS.2025.3533369

Jeffrey W. Teng;Zachary R. Brumbach;Delwyn G. Sam;Justin P. Heimerl;Brett L. Ringel;Jackson P. Moody;Nelson E. Sepúlveda-Ramos;Adrian Ildefonso;Ani Khachatrian;Dale McMorrow;Linda Del Castillo;Mohammad M. Mojarradi;Benjamin J. Blalock;John D. Cressler

{"title":"A Framework for Determining System-Level SEE Vulnerabilities in Wireless RF Receivers","authors":"Jeffrey W. Teng;Zachary R. Brumbach;Delwyn G. Sam;Justin P. Heimerl;Brett L. Ringel;Jackson P. Moody;Nelson E. Sepúlveda-Ramos;Adrian Ildefonso;Ani Khachatrian;Dale McMorrow;Linda Del Castillo;Mohammad M. Mojarradi;Benjamin J. Blalock;John D. Cressler","doi":"10.1109/TNS.2025.3533369","DOIUrl":"https://doi.org/10.1109/TNS.2025.3533369","url":null,"abstract":"Space-borne wireless communications systems have become ubiquitous with the advent of commercial space flight. To support robust wireless data transmission in Earth-orbiting and deep-space applications, a framework has been developed for radio frequency (RF) designers and radiation-effects engineers to identify, model, visualize, and test single-event effects (SEEs) in wireless receivers. Digital RF communications receivers are introduced, including the constellation diagram, an important visualization tool. Then, the generation of single-event transients (SETs) is presented in multiple layers, starting from transistors, building to SETs at the outputs of each circuit block, and culminating in the response of the full receiver system. Circuit blocks addressed in this work include a low-noise amplifier (LNA), a downconversion mixer, and a voltage-controlled oscillator (VCO). Analytical theory and numerical simulation are synthesized, accompanied by pulsed-laser SEE testing, to give an understanding of how deposited charges in constituent transistors convert to SETs and single-event upsets (SEUs). As an example case, a SiGe-BiCMOS direct-conversion receiver carrying 100-Mbaud quadrature phase shift keying (QPSK) at the X-band (8–12 GHz) is characterized using pulsed-laser SEE testing. This manuscript provides a useful review and analytical template that enable future designers and radiation-effects engineers to: 1) model SET propagation in a wireless receiver a priori, without testing full systems; 2) identify the SEE mechanisms present in a wireless receiver with knowledge of the circuit components present; and 3) determine sensitive transistors and circuits to develop informed test plans for worst case predictions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"825-847"},"PeriodicalIF":1.9,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-20 DOI: 10.1109/TNS.2024.3525437

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Announcing the New Senior Editor for Nuclear Power Instrumentation and Control 宣布新的核电仪表与控制高级编辑

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-20 DOI: 10.1109/TNS.2024.3513632

Zane W. Bell

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Search for Editor-in-Chief 寻找总编辑

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-20 DOI: 10.1109/TNS.2025.3528697

Zane W. Bell

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IEEE Transactions on Nuclear Science information for authors IEEE核科学汇刊作者信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-20 DOI: 10.1109/TNS.2024.3525438

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Single-Event Functional Interrupt Mapping of cm-Size Microprocessor Using Ion Microbeam

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-16 DOI: 10.1109/TNS.2025.3530568

Jinlong Guo;Wenbo Tian;Guangbo Mao;Hongjun You;Can Zhao;Ruqun Wu;Wenjing Liu;Cheng Shen;Hongjin Mou;Lei Zhang;Guanghua Du

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Bulk Damage Effects in Neutron Irradiated Single- and Dual-Layer 150-nm CMOS SPADs

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-15 DOI: 10.1109/TNS.2025.3530240

F. Shojaei;P. Brogi;G.-F. Brogi;S. Giroletti;P. S. Marrocchesi;J. Minga;Lucio Pancheri;L. Ratti;G. Torilla;C. Vacchi

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Research Progress in Numerical Simulation of Environmental Parameters Generated by the High-Altitude Nuclear Explosions

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-15 DOI: 10.1109/TNS.2025.3530013

Jianguo Wang;Li Liu;Yinghong Zuo;Shengli Niu;Xiazhi Li;Jinhui Zhu;Yinjun Gao;Xianghua Zhang;Xiaoping Ouyang

{"title":"Research Progress in Numerical Simulation of Environmental Parameters Generated by the High-Altitude Nuclear Explosions","authors":"Jianguo Wang;Li Liu;Yinghong Zuo;Shengli Niu;Xiazhi Li;Jinhui Zhu;Yinjun Gao;Xianghua Zhang;Xiaoping Ouyang","doi":"10.1109/TNS.2025.3530013","DOIUrl":"https://doi.org/10.1109/TNS.2025.3530013","url":null,"abstract":"The environment generated in a high-altitude nuclear explosion (HANE) can cause damage to critical infrastructures, such as space vehicles, communication systems, and power systems. The mechanisms of the instantaneous and long-term environments caused by the HANE and their damage factors to the targets are analyzed. Research works on the numerical simulation of the HANE environment by the author’s team in recent years have been introduced. Many key technologies on the numerical simulation are developed, such as the model of stripped region formation by X-ray peeling extra-nuclear electrons, the integration simulation of the early-time and intermediate-time high-altitude electromagnetic pulse (HEMP) based on the current source provided by the Monte Carlo (MC) method, the model of asymmetric fireball evolution, the model of debris movement and the atmospheric ionization by delayed radiation, and the model of electron injection and diffusion loss in the artificial radiation belt. The numerical simulation method for HANE is presented, including the instantaneous environments (such as nuclear radiation, X-ray, HEMP, and optical radiation) and the long-term environments (such as debris, additional ionosphere, and artificial radiation belt). The environmental parameters of the HANE under typical height of burst (HOB) and yield are given. The characteristics and laws of the HANE environment are summarized.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"884-900"},"PeriodicalIF":1.9,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Characterization of p-i-n Particle Detectors Based on Semi-Insulating GaAs With an MOCVD-Grown P+ GaAs Anode Contact Layer 基于具有 MOCVD 生长 P+ GaAs 阳极接触层的半绝缘 GaAs 的 pi-i-n 粒子探测器的特性分析

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-01-13 DOI: 10.1109/TNS.2025.3528622

O. Sabag;E. Evenstein;G. Atar;M. Bin-Nun;M. Alefe;D. Memram;R. Tamari;S. Primo;S. Zoran;L. Hovalshvili;D. Cohen-Elias;T. Lewi

{"title":"Characterization of p-i-n Particle Detectors Based on Semi-Insulating GaAs With an MOCVD-Grown P+ GaAs Anode Contact Layer","authors":"O. Sabag;E. Evenstein;G. Atar;M. Bin-Nun;M. Alefe;D. Memram;R. Tamari;S. Primo;S. Zoran;L. Hovalshvili;D. Cohen-Elias;T. Lewi","doi":"10.1109/TNS.2025.3528622","DOIUrl":"https://doi.org/10.1109/TNS.2025.3528622","url":null,"abstract":"Semi-insulating (SI) gallium arsenide (GaAs) alpha detectors with anode GaAs P+ contact layer were fabricated and characterized. The contact layer growth was carried out by metal-organic chemical vapor deposition (MOCVD) and the detector performances were compared to the performances of a front Schottky contact detector. The front-side Schottky contact suffers from electron injection into the GaAs substrate. This injection is eliminated by using a P+ anode blocking layer with an ohmic contact, resulting in a reduction of leakage current at reverse bias values of up to 70 V. For example, at 30 V, the leakage currents were 50 and 150 nA/cm2 for the ohmic and the Schottky anode detectors, respectively. For both detectors, the charge collection efficiency (CCE) was increased by a factor of ~2 after grinding the substrates from 650- to 310-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m thickness, with no leakage current degradation. In addition, rapid thermal process (RTP) annealing of the bottom N contact reduced the leakage current only for the Schottky detector, while improving the forward bias characteristics for both ohmic and Schottky detectors, as expected.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"184-188"},"PeriodicalIF":1.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0