发布求助
文献互助 智能选刊 最新文献

IEEE Transactions on Nuclear Science最新文献

筛选
英文 中文
NSREC 2024 Special Issue of the IEEE Transactions on Nuclear Science List of Reviewers IEEE 核科学论文集》NSREC 2024 特刊审稿人名单
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555341
{"title":"NSREC 2024 Special Issue of the IEEE Transactions on Nuclear Science List of Reviewers","authors":"","doi":"10.1109/TNS.2025.3555341","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555341","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"970-970"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971766","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Memoriam 悼念
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555336
Dennis B. Brown
{"title":"In Memoriam","authors":"Dennis B. Brown","doi":"10.1109/TNS.2025.3555336","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555336","url":null,"abstract":"Recounts the career and contributions of (Dennis B. Brown).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"976-976"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971770","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Message From the New Editor-in-Chief 新主编致辞
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3557182
Gian-Franco Dalla Betta
{"title":"A Message From the New Editor-in-Chief","authors":"Gian-Franco Dalla Betta","doi":"10.1109/TNS.2025.3557182","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557182","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1515-1515"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971777","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Editorial Conference Summary by the General Chair 总主席编写的编辑会议摘要
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555338
Heather Quinn
{"title":"Editorial Conference Summary by the General Chair","authors":"Heather Quinn","doi":"10.1109/TNS.2025.3555338","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555338","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"965-968"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971753","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of a Tl₂LaCl₅:Ce Crystal Coupled With a Silicon Photomultiplier for a Compact Single-Photon Emission Computed Tomography System Tl₂LaCl₅：Ce晶体与硅光电倍增管耦合用于紧凑型单光子发射计算机断层扫描系统的表征
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3562678
I. H. Bang;H. W. Park;A. Khan;J. Jegal;H. J. Kim
{"title":"Characterization of a Tl₂LaCl₅:Ce Crystal Coupled With a Silicon Photomultiplier for a Compact Single-Photon Emission Computed Tomography System","authors":"I. H. Bang;H. W. Park;A. Khan;J. Jegal;H. J. Kim","doi":"10.1109/TNS.2025.3562678","DOIUrl":"https://doi.org/10.1109/TNS.2025.3562678","url":null,"abstract":"The novel Tl2LaCl5:Ce (TLC) crystal scintillator has a high density and effective Z number. Hence, a single-photon emission computed tomography (SPECT) detector equipped with the scintillator has excellent X-ray and <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray detection efficiency and a high light yield (LY). The feasibility of utilizing the TLC crystal coupled with a silicon photomultiplier (SiPM) was investigated for a compact SPECT detector. The TLC crystal (Ø<inline-formula> <tex-math>$8times 2$ </tex-math></inline-formula> mm) coupled with a one-channel SiPM (<inline-formula> <tex-math>$6.07times 6.07$ </tex-math></inline-formula> mm2) was used. Electrical characteristics of the SiPM were used for optimizing the operating voltage and dynamic range. The <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays’ energy spectra of 133 Ba, 241Am, and 152 Eu were obtained. The SiPM outputs were digitized utilizing a data acquisition (DAQ) system. The breakdown voltage of the SiPM was measured to be 24.8 V. The operating voltage was fixed as 29.8 V by comparing energy resolutions for different operating voltages under 81-keV <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray excitation from a 133Ba radioactive source. The linearity of the SiPM was measured to be within 3.7% for up to 8500 incident photons. Owing to the high LY of the TLC crystal and the dynamic range of SiPM, the best energy resolution of the TLC crystal was achieved to be 8.7% full-width-half-maximum at 121.7-keV <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray at the voltage of 29.8 V. The TLC crystal coupled with SiPM is expected to be utilized for the development of compact SPECT detectors. It can replace conventional photomultiplier detectors and attain a good image quality, comparable to that of a solid-state detector in the SPECT system.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1828-1832"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3557607
{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2025.3557607","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557607","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"C2-C2"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971765","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Memoriam 悼念
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555294
Harry T. Weaver
{"title":"In Memoriam","authors":"Harry T. Weaver","doi":"10.1109/TNS.2025.3555294","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555294","url":null,"abstract":"Recounts the career and contributions of (Harry T. Weaver).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"979-980"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971741","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Outstanding Conference Paper Award: 2024 IEEE Nuclear and Space Radiation Effects Conference 杰出会议论文奖：2024 年电气和电子工程师学会核与空间辐射效应会议
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555340
{"title":"Outstanding Conference Paper Award: 2024 IEEE Nuclear and Space Radiation Effects Conference","authors":"","doi":"10.1109/TNS.2025.3555340","DOIUrl":"https://doi.org/10.1109/TNS.2025.3555340","url":null,"abstract":"Presents the recipients of (NSREC) awards for (2024).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"973-975"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science publication information 电气和电子工程师学会《核科学学报》出版物信息
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3557646
{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2025.3557646","DOIUrl":"https://doi.org/10.1109/TNS.2025.3557646","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"C2-C2"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10971769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs 入射角度对重离子辐照1800 v和4500 v SiC功率mosfet单事件漏电流退化的影响
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3563110
A. Sengupta;C. Martinella;D. R. Ball;K. Niskanen;A. S. Senarath;S. Islam;P. M. Harris;J. M. Hutson;J. M. Osheroff;A. L. Sternberg;H. Kettunen;S. L. Kosier;U. Grossner;A. Javanainen;K. F. Galloway;R. D. Schrimpf;A. F. Witulski
{"title":"Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs","authors":"A. Sengupta;C. Martinella;D. R. Ball;K. Niskanen;A. S. Senarath;S. Islam;P. M. Harris;J. M. Hutson;J. M. Osheroff;A. L. Sternberg;H. Kettunen;S. L. Kosier;U. Grossner;A. Javanainen;K. F. Galloway;R. D. Schrimpf;A. F. Witulski","doi":"10.1109/TNS.2025.3563110","DOIUrl":"https://doi.org/10.1109/TNS.2025.3563110","url":null,"abstract":"Experimental heavy-ion responses of two variants of silicon carbide (SiC) power metaloxidesemiconductor field-effect transistors (MOSFETs) are evaluated. The devices have similar epitaxial thickness but different dopings. The higher doping in the epitaxial region results in lower breakdown voltage and typically leads to a lower threshold drain voltage at which single-event leakage current (SELC) occurs. Furthermore, the heavy-ion-induced SELC degradation in the drain and gate currents of the SiC MOSFETs exhibits a strong dependence on the heavy-ion’s angle of incidence. The devices’ behavior significantly alters when irradiated with heavy-ions at different incident angles under the same fixed bias and total fluence, as also confirmed by 3-D technology computer aided design (TCAD) simulations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2386-2394"},"PeriodicalIF":1.9,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10972072","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信