Joel M. Hales;Adrian Ildefonso;Ani Khachatrian;Gregory R. Allen;Dale McMorrow
{"title":"Implications of Elevated Temperatures on the Accuracy of Pulsed-Laser SEE Testing","authors":"Joel M. Hales;Adrian Ildefonso;Ani Khachatrian;Gregory R. Allen;Dale McMorrow","doi":"10.1109/TNS.2025.3538531","DOIUrl":"https://doi.org/10.1109/TNS.2025.3538531","url":null,"abstract":"Elevated temperature can impact the accuracy of pulsed-laser (PL) single-event effect (SEE) testing primarily due to the temperature dependence of optical absorption. This is particularly true for laser wavelengths capable of through-wafer testing which are key for most recent-generation device technologies. This study accounts for the influence of temperature on the key parameter for PL testing, the laser-equivalent linear E<sc>nergy</small> transfer (LETL). This is accomplished by employing accurate models of the temperature-dependent absorption coefficients and validating the resulting calculations against experimental charge collection data over a range of wavelengths and temperatures. With this understanding, the impacts of elevated temperature on the accuracy of PL testing when investigating single-event transients (SETs) and single-event latchup (SEL) are discussed in terms of ramifications and approaches for remediation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1365-1374"},"PeriodicalIF":1.9,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design Study of a Compact Injector for a Synchrotron Light Source","authors":"Daniele Francescone;Paolo Craievich;Marcos Gaspar;Thomas Geoffrey Lucas;Andrea Mostacci;Riccardo Zennaro","doi":"10.1109/TNS.2025.3538576","DOIUrl":"https://doi.org/10.1109/TNS.2025.3538576","url":null,"abstract":"Synchrotron light sources are commonly fed with 100-MeV normal conducting linear accelerators powered by a dc thermionic electron gun for high current applications. Such systems are robust solutions for electron sources; however, they tend to have complex bunching systems that increase the complexity and overall cost. In this work, we propose an approach where nonrelativistic bunches are directly injected into a relativistic accelerating structure that is detuned from the optimal frequency. This detuning causes a phase jump, enabling the achievement of beam parameters, such as transmission and energy spread, comparable to those obtained with conventional multistructure bunching systems. The proposed solution simplifies the longitudinal beam dynamics and avoids the need for complex bunching systems. The simplicity and reduced size of this design make the proposed solution interesting for compact electron sources. The article proposes, as an example, a possible upgrade of the Swiss Light Source (SLS) 100-MeV injection linac.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"774-780"},"PeriodicalIF":1.9,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Patrick Xiao;Maximilian Siath;Matthew Spear;Donald Wilson;Christopher H. Bennett;Ben Feinberg;David R. Hughart;Jereme Neuendank;William E. Brown;Hugh Barnaby;Vineet Agrawal;Helmut Puchner;Sapan Agarwal;Matthew J. Marinella
{"title":"In Situ Analog In-Memory Computing Under Ionizing Radiation Exposure","authors":"T. Patrick Xiao;Maximilian Siath;Matthew Spear;Donald Wilson;Christopher H. Bennett;Ben Feinberg;David R. Hughart;Jereme Neuendank;William E. Brown;Hugh Barnaby;Vineet Agrawal;Helmut Puchner;Sapan Agarwal;Matthew J. Marinella","doi":"10.1109/TNS.2025.3537985","DOIUrl":"https://doi.org/10.1109/TNS.2025.3537985","url":null,"abstract":"We experimentally performed in situ analog in-memory computing (IMC) under ionizing radiation, using a 40-nm silicon-oxide–nitride-oxide–silicon (SONOS) charge-trap memory array with peripheral circuits that support analog matrix-vector multiplication (MVM) operations. The SONOS array used analog MVMs to process the last layer of a convolutional neural network (CNN) for TinyImageNet image classification while being irradiated by gamma rays from a Co-60 source. We experimentally characterized how the following quantities were gradually degraded by increasing the total ionizing dose (TID), up to 3.2 Mrad(Si): neural network weights that were mapped to SONOS states, dot products that were computed by analog MVMs, and the resulting image classification accuracy of the neural network. Using multiscale modeling, we confirmed that the experimentally observed accuracy loss originates almost entirely from the state-dependent current shifts induced by ionizing radiation in the SONOS memory cells. Our experimentally validated model of radiation effects in SONOS analog computing can be used to guide the design of reliable space-grade analog IMC accelerators.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1243-1251"},"PeriodicalIF":1.9,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A High-Compression-Ratio Channel-Multiplexing Method for Micropattern Gaseous Detectors","authors":"Yu Wang;Shubin Liu;Hao Zhuang;Zhengwu Ding;Zhihang Yao;Changqing Feng;Zhiyong Zhang","doi":"10.1109/TNS.2025.3537159","DOIUrl":"https://doi.org/10.1109/TNS.2025.3537159","url":null,"abstract":"The demand for a large number of readout channels has been a limiting factor for the application of micropattern gaseous detectors (MPGDs) in achieving higher spatial resolution and larger detection areas. This challenge is further compounded by issues related to system integration, power consumption, and cost efficiency. To address these challenges, this study proposes two novel multiplexing methods based on Eulerian circuits. Mathematical calculations indicate that with n electronic channels, up to <inline-formula> <tex-math>$n times (n-1)/2 - (n - 2)/2 + 1$ </tex-math></inline-formula> detector channels can be read out, where n is even. Three types of multiplexing circuits were designed, implemented, and tested in combination with micromesh gaseous structure (Micromegas) detectors. Experimental results demonstrate that for a multiplexing circuit with a factor of 8, the spatial resolution remains comparable to the direct readout method, while achieving a detection efficiency exceeding 94%. For a circuit with a multiplexing factor of 16, although the spatial resolution shows a slight degradation, the detection efficiency remains above 93.6%. These results demonstrate that the proposed multiplexing methods can significantly reduce the number of readout channels while maintaining an acceptable level of spatial resolution and detection efficiency. These findings highlight the potential of the proposed multiplexing techniques for applications in fields requiring high-resolution and cost-effective detector systems, such as cosmic-ray muon imaging.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"765-772"},"PeriodicalIF":1.9,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Antonio Scialdone;Rudy Ferraro;Salvatore Danzeca;Frederic Saigne;Jérôme Boch;Luigi Dilillo;Alessandro Masi
{"title":"Design and Characterization of a Radiation-Tolerant Wireless Physical Layer for Control Applications in CERN Particle Accelerators","authors":"Antonio Scialdone;Rudy Ferraro;Salvatore Danzeca;Frederic Saigne;Jérôme Boch;Luigi Dilillo;Alessandro Masi","doi":"10.1109/TNS.2025.3537402","DOIUrl":"https://doi.org/10.1109/TNS.2025.3537402","url":null,"abstract":"The article explores the design and radiation characterization of a wireless physical layer (PHY) specifically tailored for equipment control in harsh radiation environments, such as those in particle accelerators like the large hadron collider (LHC). The PHY, built with commercial-off-the-shelf (COTS), leverages a software-defined radio (SDR), which, compared to dedicated transceivers, provides more flexibility and enables enhanced reliability through mitigation techniques. It is designed for low latency to meet the sampling time requirements of current LHC control applications. The PHY is developed to be radiation-tolerant, capable of withstanding the LHC radiation environment. The article presents the radiation characterization of all system components using a 200-MeV proton beam. Experimental results show the link’s robustness against total ionizing dose (TID) and single-event effects (SEEs), with no performance degradation due to SEEs and tolerance up to kGy of dose. Radiation-induced link losses were observed, and strategies to enhance link reliability were discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1068-1076"},"PeriodicalIF":1.9,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10858761","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gianluigi De Geronimo;Yuefeng Zhu;James E. Berry;Zhong He
{"title":"Waveform-Sampling Front-End ASIC for 3-D Position-Sensitive Detectors","authors":"Gianluigi De Geronimo;Yuefeng Zhu;James E. Berry;Zhong He","doi":"10.1109/TNS.2025.3536220","DOIUrl":"https://doi.org/10.1109/TNS.2025.3536220","url":null,"abstract":"In this article, a waveform-sampling front-end application-specific integrated circuit (ASIC) for 3-D position-sensitive detectors (PSDs), called H3DD-UM, is presented. The ASIC integrates 128 channels for anode events and two channels for cathode events. Each channel provides low-noise charge amplification with an adjustable dynamic range to cover up to 10 MeV, followed by two programmable antialiasing filters with different gains, each feeding a 256-cell waveform-sampling circuit. The sampling architecture makes use of a single rail-to-rail amplifier configured to cancel offset errors and achieve high sampling uniformity. A dedicated circuit in the channel provides analog shaping for low-noise discrimination of the events. The number of stored samples before and after discrimination is fully programmable. The ASIC integrates numerous functions, including pixel leakage current measurement, analog monitoring, test pulse generators, temperature sensor, and interchip communication for use in systems with multiple modules.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"925-935"},"PeriodicalIF":1.9,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Integration of Hardware Acceleration Techniques in a Real-Time Framework Using FPGA Devices","authors":"C. González;M. Ruiz;J. Nieto;A. Carpeño;A. Piñas;V. Costa;E. Barrera;G. Arranz;W. Lee;T. Tak;A. Zagar","doi":"10.1109/TNS.2025.3534905","DOIUrl":"https://doi.org/10.1109/TNS.2025.3534905","url":null,"abstract":"The ITER International Fusion Experiment Organization is implementing the real-time framework (RTF) to facilitate the development, deployment, and execution of instrumentation and control (I&C) applications optimized for real-time performance using the GNU/Linux-based ITER CODAC Core System (CCS) software distribution. This contribution examines the feasibility of using hardware acceleration techniques with field-programmable gate arrays (FPGAs) to implement real-time applications in the RTF that requires specific compute-intensive functions. By combining the use of languages such as high-level synthesis (HLS) and open computing language (OpenCL) with FPGA devices, specific hardware architectures can be implemented to solve certain computational problems to gain performance and limit latency. This work shows the methodology used to integrate HLS and OpenCL in the ITER CCS and the results obtained in terms of execution time for two common processing operations, vector addition and matrix multiplication, using a commercial off-the-shelf FPGA-based device.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"273-279"},"PeriodicalIF":1.9,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10855802","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143645233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tian Yu;Yingqi Ma;Xiaoheng Xu;Xiang Zhu;Longlong Zhang;Jieyi Wang;Jianwei Han
{"title":"Investigation on Radiation Effects of White Neutron Source on COTS Solid-State Drives","authors":"Tian Yu;Yingqi Ma;Xiaoheng Xu;Xiang Zhu;Longlong Zhang;Jieyi Wang;Jianwei Han","doi":"10.1109/TNS.2025.3535502","DOIUrl":"https://doi.org/10.1109/TNS.2025.3535502","url":null,"abstract":"Commercial solid-state drives (SSDs) were subjected to broad-spectrum neutron exposure at the China Spallation Neutron Source (CSNS) to analyze radiation-induced errors in components and functional interruptions in non-volatile memory express (NVMe) and serial advanced technology attachment (SATA) SSDs. The experiments revealed apparent sensitivity differences, with NVMe SSDs demonstrating better resistance at the module level due to advanced controller technology and enhanced error correction capabilities than SATA SSDs. For NVMe SSDs, functional interruptions were primarily identified as <sc>nand</small> Flash faults, such as timeouts, and dynamic random access memory (DRAM) errors, such as stuck bits, while controller vulnerabilities contributed minimally. Moreover, this article examines the dominance of read errors as the primary failure mode in <sc>nand</small> Flash and explores how the cumulative characteristic of these errors correlates with functional interruptions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"875-883"},"PeriodicalIF":1.9,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Neutron Yield of Thermo Scientific P385 D–T Neutron Generator Versus Current and Voltage","authors":"Jihye Jeon;Robert J. Goldston;Erik P. Gilson","doi":"10.1109/TNS.2025.3534627","DOIUrl":"https://doi.org/10.1109/TNS.2025.3534627","url":null,"abstract":"The Thermo Scientific P385 Neutron Generator is a compact neutron source, producing 14-MeV neutrons through the deuterium-tritium (D-T) fusion reaction. It is important to measure and understand the dependence of the neutron production rate on the accelerator current and voltage. In this study, we evaluated neutron production with an absolutely calibrated liquid scintillator neutron spectrometer (BTI N-Probe), an absolutely calibrated He-3 detector surrounded by high-density polyethylene (HDPE) shells [Detec nested neutron spectrometer (NNS)], and two uncalibrated zinc sulfide (ZnS) fast neutron scintillators (EJ-410), for both A3082 and A3083 sealed tubes. We also modeled the neutron yield using the Transport of Ions in Matter (TRIM) code, which calculates the trajectory and the energy loss of deuterons and tritons in the target. Experimental results showed an essentially linear dependence on the beam current, as expected. A <inline-formula> <tex-math>$3.59~pm ~0.08$ </tex-math></inline-formula> power law dependence on the operating voltage was measured, in effective agreement with the modeled value of 3.5. A series of absolute NNS and N-Probe measurements, matched against Monte Carlo N-Particle (MCNP) calculations, showed that the A3083 and A3082 tubes provide a maximum neutron yield of <inline-formula> <tex-math>$ 8.2 times 10^{8}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$4.7 times 10^{8}$ </tex-math></inline-formula> n/s, respectively, with an estimated uncertainty of ±10%. We showed, through modeling, that tritium decay is not a significant consideration for tubes, such as these, with lifetimes of less than ten years.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"919-924"},"PeriodicalIF":1.9,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Holding Voltage SCR Devices With 150-krad(Si) TID Irradiation Tolerance for ESD Protection","authors":"Yujie Liu;Xiaonian Liu;Xiangliang Jin","doi":"10.1109/TNS.2025.3533214","DOIUrl":"https://doi.org/10.1109/TNS.2025.3533214","url":null,"abstract":"In high-voltage (HV) integrated circuits (ICs), electrostatic discharge (ESD) has long been a critical reliability issue, particularly in space applications operating in radiation environments. The impact of ionizing radiation on the electrical characteristics of ESD protection devices cannot be overstated. This article investigates high holding voltage silicon-controlled rectifier (HHVSCR) devices using technology computer-aided design (TCAD) and transmission line pulse (TLP) testing systems. The HHVSCR is fabricated using 0.18-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m bipolar-CMOS-[double-diffused metal-oxide-semiconductor (DMOS)] (BCD) technology. TLP test results indicate a holding voltage of 20.73 V for the HHVSCR, with a human body model (HBM) protection level of 19 kV. Additionally, <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray irradiation experiments demonstrate minimal degradation in ESD performance for the HHVSCR even under total-ionizing-dose (TID) irradiation of 150 krad(Si), maintaining leakage current at nA levels. Compared to existing HV ESD protection devices, the HHVSCR offers superior area efficiency, high TID tolerance, and strong latchup immunity for 12-V ICs. These features make it an excellent candidate for HV ESD protection in space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"816-824"},"PeriodicalIF":1.9,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}