IEEE Transactions on Nuclear Science最新文献_第10页

Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity SiC功率MOSFET单事件烧毁灵敏度的质子能量依赖性

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-12 DOI: 10.1109/TNS.2025.3550609

K. Niskanen;A. Javanainen;C. Martinella;W. Hajdas;U. Grossner;H. Kettunen

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Total Ionizing Dose Effects on Silicon Nitride Photonic Integrated Microring Resonators and Mach–Zehnder Interferometers 氮化硅光子集成微oring 谐振器和马赫-泽恩德干涉仪的总电离剂量效应

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-12 DOI: 10.1109/TNS.2025.3550647

Giulio Terrasanta;Agnes M. Zinth;Marcin W. Ziarko;Nicola Bergamasco;Juraj Poliak;Menno Poot

{"title":"Total Ionizing Dose Effects on Silicon Nitride Photonic Integrated Microring Resonators and Mach–Zehnder Interferometers","authors":"Giulio Terrasanta;Agnes M. Zinth;Marcin W. Ziarko;Nicola Bergamasco;Juraj Poliak;Menno Poot","doi":"10.1109/TNS.2025.3550647","DOIUrl":"https://doi.org/10.1109/TNS.2025.3550647","url":null,"abstract":"Silicon nitride (SiN) photonic integrated circuits (PICs) are a promising technology for satellite applications. In particular, they could be employed in satellite payloads for optical communications, allowing for the integration of optical functionalities on a chip, thus reducing the payload footprint. The research on the space environmental effects of this technology platform is still novel. Here, an experimental characterization of ionizing dose effects on integrated microring resonators (MRRs) and Mach-Zehnder interferometers (MZIs) is presented. Hundreds of devices with different waveguide widths were fabricated and characterized before and after irradiation, thanks to a highly automated setup. The impact of radiation in terms of additional losses, change in effective index, and change in the group index was evaluated. Furthermore, the long-term evolution of the effects after irradiation was also monitored. A change in the effective index as high as 2 × 10−3 and an increase in losses as large as 1 dB/cm were measured. The measured impact on the effective index and the group index, although relatively small, would be detrimental to applications such as wavelength filtering and/or (de)multiplexing and will need to be taken into account when designing devices for optical satellite communications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1542-1551"},"PeriodicalIF":1.9,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10924423","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Displacement Damage in an Irradiated 4H-SiC MESFET 辐照4H-SiC MESFET的位移损伤

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-11 DOI: 10.1109/TNS.2025.3550298

Steven C. Witczak;Wayne A. Martin;James W. Palko;Joseph R. Srour;Rokutaro Koga

{"title":"Displacement Damage in an Irradiated 4H-SiC MESFET","authors":"Steven C. Witczak;Wayne A. Martin;James W. Palko;Joseph R. Srour;Rokutaro Koga","doi":"10.1109/TNS.2025.3550298","DOIUrl":"https://doi.org/10.1109/TNS.2025.3550298","url":null,"abstract":"Radiation-induced degradation of a commercial 4H-SiC metal-semiconductor field-effect transistor (MESFET) is examined following exposure to 941-MeV Bi ions, 20-MeV protons and 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays. The degradation results primarily from displacement damage. The device is radiation-hard to an equivalent 1-MeV neutron fluence of <inline-formula> <tex-math>$2.6times 10^{14}$ </tex-math></inline-formula> cm−2. The relative contributions of carrier removal and mobility degradation to device degradation are comparable. The channel mobility is reduced by 40% at a non-ionizing dose (NID) of <inline-formula> <tex-math>$3.1times 10^{12}$ </tex-math></inline-formula> MeV/g. The carrier removal rate normalized to 1-MeV neutron fluence is <inline-formula> <tex-math>$32~pm ~3$ </tex-math></inline-formula> cm−1, which is more than six times the rates reported for similar 6H-SiC devices. The difference in carrier removal rates for the two polytypes is apparently related to differences in radiation defect properties. The degradation scales with elastic non-ionizing energy loss (NIEL), which suggests that nuclear inelastic interactions, which tend to produce long recoils relative to the device channel depth, do not contribute to parametric degradation. This implies that qualification testing of certain device types with high-energy protons directed at the device surface may lead to an overestimation of device lifetime in space.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 5","pages":"1755-1762"},"PeriodicalIF":1.9,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Multiple-Cell Upset Analysis on 16/12-nm Bulk FinFET SRAM Caused by Proton Irradiation 质子辐照对16/ 12nm块体FinFET SRAM的多电池破坏分析

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-11 DOI: 10.1109/TNS.2025.3544154

Keita Sakamoto;Kozo Takeuchi;Yuta Tsuchiya;Naoki Ohtani;Kyo Kume;Satoshi Mizushima;Shinko Sando;Satoshi Hatori;Takahiro Makino;Akinori Takeyama;Takeshi Ohshima;Ryunosuke Nakamura;Takashi Kato;Hiroyuki Shindou

{"title":"Multiple-Cell Upset Analysis on 16/12-nm Bulk FinFET SRAM Caused by Proton Irradiation","authors":"Keita Sakamoto;Kozo Takeuchi;Yuta Tsuchiya;Naoki Ohtani;Kyo Kume;Satoshi Mizushima;Shinko Sando;Satoshi Hatori;Takahiro Makino;Akinori Takeyama;Takeshi Ohshima;Ryunosuke Nakamura;Takashi Kato;Hiroyuki Shindou","doi":"10.1109/TNS.2025.3544154","DOIUrl":"https://doi.org/10.1109/TNS.2025.3544154","url":null,"abstract":"The effects of proton-induced multiple-cell upsets (MCUs) on 16 and 12-nm fin field effect transistor (FinFET) static random access memories (SRAMs) were studied. Their dependence on the incident angle and supply voltage is discussed in terms of the MCU size and the fail-bit map (FBM). For perpendicular proton irradiation, we compared the MCU characteristics of FinFET SRAMs with 20-nm bulk planar SRAMs. In the proton energy dependence of single event upset (SEU) cross section, peak structures caused by proton direct ionization (PDI) were observed. At the nominal voltage condition, the peak was observed in the 20-nm bulk planar SRAM, but not in the 16 and 12-nm FinFET SRAMs. At the low voltage condition, however, the peak was observed even in the FinFET SRAMs. For the 16 and 12-nm FinFET SRAMs, the maximum size of MCUs was 3-bits, whereas that was 7-bits for 20-nm bulk planar SRAMs. Furthermore, the differences in the physical pattern of MCUs are observed between 16-nm FinFET and 20-nm SRAMs in perpendicular proton irradiation, where the 16-nm FinFET SRAM tends to have a rectangular shape with a longer side in the bitline (BL) direction. This clearly suggests that multiple-bit upsets (MBUs), which are known as uncorrectable MCUs, hardly occur in 16 and 12-nm FinFET SRAMs. For the angular irradiation, MBU probability in all MCU events reached 73% when tilting the SRAM at 75° across the fin body direction. However, the observed MBU size was up to 2-bits, indicating that bit-interleaves with more than 2-bits can be effective for mitigating MBUs in 16 and 12-nm FinFET SRAMs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1470-1478"},"PeriodicalIF":1.9,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Soft-Error Detection and Execution Observation for ARM Microprocessors ARM微处理器的软错误检测与执行观察

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-11 DOI: 10.1109/TNS.2025.3550369

Manuel Peña-Fernández;Borja Verdasco;Luis Entrena;Almudena Lindoso

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Experimental Study on Enhanced AlGaN/GaN HEMT Under Different Irradiation Conditions 不同辐照条件下增强型 AlGaN/GaN HEMT 的实验研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-10 DOI: 10.1109/TNS.2025.3549469

Zhi-Yu Xi;Ying Wang;Xin-Xing Fei;Biao Sun;Huo-Lin Huang;Yan-Xing Song;Fei Cao

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Single Event Effect Characterization of 128-Layer 3-D TLC NAND Flash Memory With Xtacking Technology 基于Xtacking技术的128层3-D TLC NAND闪存单事件效应表征

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-09 DOI: 10.1109/TNS.2025.3568405

Qiang Yan;Junshe An;Chang Liu

{"title":"Single Event Effect Characterization of 128-Layer 3-D TLC NAND Flash Memory With Xtacking Technology","authors":"Qiang Yan;Junshe An;Chang Liu","doi":"10.1109/TNS.2025.3568405","DOIUrl":"https://doi.org/10.1109/TNS.2025.3568405","url":null,"abstract":"The single event effect (SEE) response under heavy-ion irradiation for 128-layer 3-D triple-level cell (TLC) <sc>nand</small> flash memory from Yangtze Memory Technologies Company Ltd. (YMTC) with Xtacking technology is presented in this study. Current variation, bit error map, data pattern, and layer dependence are discussed. The results reveal significant variations in current behavior across different linear energy transfer (LET) levels, with single event functional interruptions (SEFIs) requiring a power cycle for recovery. Configured both in single-level cell (SLC) and TLC modes, we investigate that TLC mode demonstrates a higher density of errors and greater sensitivity in data patterns compared to the SLC mode. In addition, the layer-specific error analysis highlights that the upper layers and boundary layers exhibit higher error rates compared to other layers primarily due to direct exposure to heavy ions in the upper layers and the narrower channel widths in boundary layers. These findings enhance our understanding of 3-D <sc>nand</small> flash reliability in aerospace applications and inform the design of robust storage systems for space environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1889-1896"},"PeriodicalIF":1.9,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Development and Characterization of Digital Light Processing-Based 3D-Printed Plastic Scintillator for Radiation Detection 基于数字光处理的3d打印辐射探测塑料闪烁体的研制与表征

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-07 DOI: 10.1109/TNS.2025.3567872

V. Anand;B. Bansal;K. Banerjee;G. Bizarri;Ritika Datta;G. Anil Kumar

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Precise Upper Surface Shimming Algorithm for Isochronous Cyclotrons With the Gauss–Newton Iteration Method 基于高斯-牛顿迭代法的等时回旋加速器精确上表面摆振算法

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-07 DOI: 10.1109/TNS.2025.3567768

Tianjian Bian;Jinrong Lu;Fei Wang;Xinyu Chen;Jiansheng Xing;Pengfei Zhu;Jie Liu;Guang Yang;Yuanhao Liu;Cong Wu;Luyu Ji;Peng Huang;Sumin Wei;Shizhong An;Fengping Guan

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Effects of the Distribution of Secondary-Phase and Deep-Level Defects on the Performance of CdZnTe Nuclear Radiation Detectors 二次相和深能级缺陷分布对CdZnTe核辐射探测器性能的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-07 DOI: 10.1109/TNS.2025.3544566

Wei Dai;Zhao Fu;Xuchen Wang;Zewen Tan;Xiangli Zhong;Jinbin Wang;Linyue Liu;Xiaoping Ouyang

{"title":"Effects of the Distribution of Secondary-Phase and Deep-Level Defects on the Performance of CdZnTe Nuclear Radiation Detectors","authors":"Wei Dai;Zhao Fu;Xuchen Wang;Zewen Tan;Xiangli Zhong;Jinbin Wang;Linyue Liu;Xiaoping Ouyang","doi":"10.1109/TNS.2025.3544566","DOIUrl":"https://doi.org/10.1109/TNS.2025.3544566","url":null,"abstract":"The susceptibility of CdZnTe (CZT) crystals to complex defects during the growth process poses significant challenges in preparing probe-grade CZT single crystals, thereby constraining their extensive application in nuclear radiation detectors. To deeply understand the influence of defects on the performance of CZT crystals, this study systematically investigates the influence of the secondary-phase and related deep-level defect distribution on the photoelectric performance of CZT crystals grown by the vertical gradient freeze (VGF) method. It was found that the crystals with low density of secondary-phase defects and a small defect size have a larger bulk resistivity of <inline-formula> <tex-math>$5.13times 10^{10}~Omega ~cdot $ </tex-math></inline-formula> cm, Hall mobility of 330 cm<inline-formula> <tex-math>${}^{2}~cdot $ </tex-math></inline-formula> V<inline-formula> <tex-math>${}^{-1}~cdot $ </tex-math></inline-formula> s−1, and carrier mobility-lifetime product of <inline-formula> <tex-math>$1.38times 10^{-3}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{2}~cdot $ </tex-math></inline-formula> V−1. The current deep-level transient spectroscopy (I-DLTS) results indicate that secondary-phase defects of large size and high density contribute to an increased capture cross section of deep-level traps and elevated defect concentrations, respectively. During carrier transport, the secondary phase, Tei, and [TeCd]2+-related deep-level defects exhibit prolonged charge de-trapping times, leading to decreasing carrier concentration and incomplete charge collection. Based on the energy band theory, we elucidated the mechanisms underlying the interaction of the defects in CZT crystals. The study provides a foundation for the subsequent realization of effective modulation of defects through the crystal growth process.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1612-1619"},"PeriodicalIF":1.9,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0