IEEE Transactions on Nuclear Science最新文献

{"title":"Influence of Accumulated Radiation Effects on Single-Event Burnout in SiC MOSFETs","authors":"Lei Wu;Shangli Dong;Xiaodong Xu;Yadong Wei;Zhongli Liu;Weiqi Li;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2024.3429172","DOIUrl":"10.1109/TNS.2024.3429172","url":null,"abstract":"The accumulated radiation effects of preirradiation from different radiation sources on single-event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were investigated. The displacement damage (DD) was introduced by preirradiation of silicon ions, and compared with the devices without preirradiation, it was found that it is had for SEB to occur in the devices with DD introduced after silicon ion irradiations. In contrast, for gamma ray preirradiation, it was found that SEB occurs more easily in the radiated devices by gamma ray. In addition, technology computer aided design (TCAD) is used to simulate the SEB of the devices, and the bulk defect increases the recombination rate of the devices and leads to the decrease of the current density. At the same voltage, the smaller the current density is, the lower the thermal effect will be, and SEB hardly occurs. The drain current and lattice temperature of the devices with oxide charges are higher, and SEB occurs more easily. The simulation results are reasonably consistent with the experimental results. This study provides a valuable reference for the method of SEB hardening.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141719810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deep Multitask Learning Models for Radiation Estimation at High Energy Accelerator Facility","authors":"Hongfang Zhang;Adam Stavola;Hal Ferguson;Bence Budavari;Chiman Kwan;Hongyi Wu;Jiang Li","doi":"10.1109/TNS.2024.3423695","DOIUrl":"10.1109/TNS.2024.3423695","url":null,"abstract":"Controlling the dose of radiation exposure in potential radioactive facilities is critical for ensuring the safety of staff and the public. In this article, we developed machine learning (ML) models to estimate radiation exposure efficiently at the Thomas Jefferson National Accelerator Facility (JLab), aiming to enhance safety in both accelerator facilities and public areas. Multiple sensors were deployed around the three experimental halls at JLab. Data on single-beam currents, energy levels, and radiation values at the sensor locations were collected during accelerator operation. We proposed a multitask learning (MTL) model for radiation estimation, using either 1-D convolutional neural networks (1D CNNs) or long short-term memory (LSTM) networks as the backbone. The proposed model was trained to simultaneously estimate radiation levels at the sensor locations. Experimental results demonstrated that the proposed model with LSTM backbone achieved the best estimation performance, with an average \u0000<inline-formula> <tex-math>$R {^{{2}}}$ </tex-math></inline-formula>\u0000 score of 0.7557 for estimation within the same year and 0.7157 for estimation across different years. These results significantly surpassed those of competing models.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141722250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam","authors":"Lukas Gabrisch;Matteo Cecchetto;Björn Delfs;Hui Khee Looe;Jan Budroweit;Rubén García Alía;Björn Poppe;Vanessa Wyrwoll","doi":"10.1109/TNS.2024.3427773","DOIUrl":"10.1109/TNS.2024.3427773","url":null,"abstract":"The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10597644","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141719808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Oxygen-Related Defects on Electrical Properties of Cd0.9Zn0.1Te Semiconductor","authors":"Haiwen Yu;Hongguang Liu;Jianquan Chen;Ningbo Jia;Miao Wang;Mei Yang;Quanchao Zhang;Tao Wang;Fan Yang;Wanqi Jie","doi":"10.1109/TNS.2024.3417893","DOIUrl":"10.1109/TNS.2024.3417893","url":null,"abstract":"The impurity from raw material in the as-grown crystal is one of the most important factors that hamper the advancement of Cd0.9Zn0.1Te (CZT) detectors. However, the influence of impurity oxygen is rarely reported. In this study, the first principle calculation is carried out to give a prediction about transition levels of oxygen-related defects. Glow discharge mass spectrometry (GDMS) is used to determine the concentration of all the elements. The quantitative analysis of oxygen-related defects is carried out by deep-level transient spectrum (I-DLTS), which can break through the limitations of traditional C-DLTS testing in the field of high-resistance materials. The peaks observed at about 50 and 100 K are related to the level of (VCd–O\u0000<inline-formula> <tex-math>$_{mathrm {Te}})^{0/-}$ </tex-math></inline-formula>\u0000 and (VCd–O\u0000<inline-formula> <tex-math>$_{mathrm {Te}})^{-/2-}$ </tex-math></inline-formula>\u0000 defect pair, with energy about \u0000<inline-formula> <tex-math>$E_{mathrm {v}} +0.079$ </tex-math></inline-formula>\u0000 eV and \u0000<inline-formula> <tex-math>$E_{mathrm {V}} +0.173$ </tex-math></inline-formula>\u0000 eV, trap cross section about \u0000<inline-formula> <tex-math>$3.02times 10^{-19}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>$1.01times 10^{-19}$ </tex-math></inline-formula>\u0000 cm2, respectively. The effect of oxygen on (\u0000<inline-formula> <tex-math>$mu tau)_{e}$ </tex-math></inline-formula>\u0000 of the CZT semiconductors is evaluated through Alpha particle spectrum response testing by fitting the charge collection efficiency with applied bias voltages. The (\u0000<inline-formula> <tex-math>$mu tau)_{e}$ </tex-math></inline-formula>\u0000 is about \u0000<inline-formula> <tex-math>$5.21times 10^{-4}$ </tex-math></inline-formula>\u0000 cm2/V in CZT with more oxygen and \u0000<inline-formula> <tex-math>$2.33times 10^{-3}$ </tex-math></inline-formula>\u0000 cm2/V with less oxygen. The mobility is obtained from the results of the time of flight (TOF) testing through the laser-beam-induced current (LBIC) technique, to be around 1000 cm2/V\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000s1 for both samples, and the lifetime to be 494 and 2407 ns, respectively. It can be concluded that oxygen-related defects can terribly affect the electron transport properties.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Measurement of the Response Function of a Custom Plastic Scintillator Using Monoenergetic Neutron and Proton Sources","authors":"Aya Kanj;Clément Lynde;Frédérick Carrel;Mehdi Ben Mosbah;Julien Venara;Ziad El Bitar;Marc Rousseau;Richard Babut","doi":"10.1109/TNS.2024.3426276","DOIUrl":"10.1109/TNS.2024.3426276","url":null,"abstract":"An experimental study was carried out to determine the light output function of the protons deposited energy in a custom triple discriminating (thermal neutrons/fast neutrons/gamma rays) plastic scintillator. Two response functions of the plastic scintillator were measured and compared using monoenergetic sources of either neutrons or protons. The response function to neutrons was measured at the IRSN Amande facility in CEA Cadarache using the monoenergetic neutron generator. The response matrix was based on six incident neutron energies that ranged from 953 keV to 14.8 MeV. The low-energy threshold for detecting neutrons is evaluated at around 1 MeV. The second response function was measured utilizing the Cyrcé cyclotron at IPHC located in Strasbourg. The response matrix was obtained based on six incident proton energies ranging from 5.9 to 19.97 MeV. The response function measured using monoenergetic neutrons has a nearly rectangular shape that extends from the light output of the low-energy discrimination threshold to the light output of the full incident neutron energy. The pulse height spectra acquired with monoenergetic protons exhibit a Gaussian shape, where the average value corresponds to the light output of the incident protons’ energy. The exponential curve used to fit the light output data acquired from the monoenergetic neutron field generator aligns well with the light output data obtained from the monoenergetic proton beam.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141585902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanisms of Dark Current Increase and Pixel Anomalies Induced by 2-GeV Ta-Irradiation in 8T-CMOS Image Sensors","authors":"Zitao Zhao;Lin Wen;Yudong Li;Bingkai Liu;Jie Feng;Zhikang Yang;Yihao Cui;Qi Guo","doi":"10.1109/TNS.2024.3426086","DOIUrl":"10.1109/TNS.2024.3426086","url":null,"abstract":"The space optoelectronic imaging systems are susceptible to the impact of high-energy particle irradiation during on-orbit operations, leading to dark current increase and various types of pixel anomalies, which degrades device performance. Heavy ion and proton irradiation experiments on 8T-CMOS image sensors (CISs) are conducted to investigate the characteristics of dark current distributions and hot pixels. Additionally, cold pixels are observed in 8T-image sensors. The results demonstrate that dark current increases with increasing fluence, coupled with stopping and range of ions in matter (SRIM) simulations, Coulombic elastic scattering can be identified as the main cause for dark current increases due to proton and heavy ion irradiations, and the value of scattering cross sections may ultimately lead to offsets in the universal damage factor. A common exponential behavior is observed; integrating heavy ions into the existing theoretical framework, temperature dependence, and annealing of exponential behavior are also discussed. Both hot pixels and cold pixels can be attributed to defects induced by particle irradiation, with the difference that the defects causing hot pixels are located near the pinned photodiode, while the defects causing cold pixels are located in a specific capacitance of the 8T-CMOS image sensor.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141585903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection","authors":"Victor Malherbe;Olivier Nier;Soilihi Moindjie;Philippe Roche;François Roy;Arnaud Tournier","doi":"10.1109/TNS.2024.3426077","DOIUrl":"10.1109/TNS.2024.3426077","url":null,"abstract":"Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and \u0000<inline-formula> <tex-math>$1~{mu }$ </tex-math></inline-formula>\u0000m pitch. Total ionizing dose (TID) results on \u0000<inline-formula> <tex-math>$2~{mu }$ </tex-math></inline-formula>\u0000m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); \u0000<inline-formula> <tex-math>$1~{mu }$ </tex-math></inline-formula>\u0000m n-type pixels are found to quickly degrade under radiation, in line with expectations; \u0000<inline-formula> <tex-math>$1~{mu }$ </tex-math></inline-formula>\u0000m p-type photogates exhibit very promising radiation hardness, improving on the \u0000<inline-formula> <tex-math>$2~{mu }$ </tex-math></inline-formula>\u0000m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review","authors":"Krishna C. Mandal;Sandeep K. Chaudhuri;Frank H. Ruddy","doi":"10.1109/TNS.2024.3422902","DOIUrl":"10.1109/TNS.2024.3422902","url":null,"abstract":"This article reviews the performance of vertical metal-oxide-semiconductor (MOS) radiation detectors on n-type 4H-silicon carbide (SiC) epitaxial layers, comparing SiO2, Y2O3, and Ga2O3 oxide layers. While the fabrication of conventional Schottky barrier detectors (SBDs) is much simpler, MOS detectors allow higher bias voltages, achieving full depletion in thick epitaxial layers. Fully depleted thick epitaxial layers pose larger attenuation to penetrating radiation such as X-/\u0000<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>\u0000-rays and neutrons enabling efficient and high-resolution detection. Hence, 4H-SiC-based MOS detectors directly address the quest of developing radiation hard detectors suitable for penetrating radiation in harsh environments such as nuclear reactor cores and space missions. All the MOS detectors discussed in this study demonstrated excellent rectification properties with the Y2O3 MOS detectors showing the lowest reverse-biased leakage current. Y2O3 MOS detectors also showed the highest resolution and charge collection efficiency (CCE) in self-biased mode even when compared to a benchmark Ni/4H-SiC SBD. All of the MOS detectors showed high energy resolution at optimized bias for 5486 keV alpha particles. The 0.29% energy resolution of the benchmark SBD is attributed to substantially lower Z\u0000<inline-formula> <tex-math>$_{1/2}$ </tex-math></inline-formula>\u0000 and EH\u0000<inline-formula> <tex-math>$_{6/7}$ </tex-math></inline-formula>\u0000 trap concentrations in the 4H-SiC epilayers than those in the MOS detectors. The study emphasizes suppressing lifetime-killer trap centers such as Z\u0000<inline-formula> <tex-math>$_{1/2}$ </tex-math></inline-formula>\u0000 and EH\u0000<inline-formula> <tex-math>$_{6/7}$ </tex-math></inline-formula>\u0000 for enhanced detector performance and underscores the need for further investigation into surface passivation mechanisms and their impact on junction properties.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141569620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of System Observability During System-Level Radiation Testing Through Total Current Consumption Monitoring","authors":"Ivan Slipukhin;Andrea Coronetti;Rubén García Alía;Frédéric Saigné;Jérôme Boch;Luigi Dilillo;Ygor Q. Aguiar;Carlo Cazzaniga;Maria Kastriotou;Torran Dodd","doi":"10.1109/TNS.2024.3424201","DOIUrl":"10.1109/TNS.2024.3424201","url":null,"abstract":"System-level testing of electronics is an affordable method of assessment of the performance of complete electronic systems designed for applications in the radiation environment. Compared to component-level testing, system-level test offers a much smaller degree of observability about the performance of particular system elements. The information received during the irradiation of a system might be therefore not sufficient for the identification of every system under test (SUT) malfunction. As a consequence, no action might be taken to recover the system operation while certain parts of its functionality would be lost due to the radiation-induced effects. This can lead to the incorrect execution of the system-level test and improper conclusions about radiation-induced effects. The present paper demonstrates a method allowing an efficient identification of system-level failures based on the system total current consumption monitoring. The proposed technique can be easily implemented with common instrumentation and at the same time provides valuable feedback on SUT operation. The retrieved current consumption information can be used to identify system failures that may be not observable through the communication channels that are by default included in the tested setup. Furthermore, the posttest analysis can be performed on the collected data to investigate the SUT condition along the complete timeline of its irradiation. The verification of the proposed method was performed during the qualification test of a system designed for applications at the high-energy particle accelerator facility.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10587020","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141569621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine-Learning-Based Mismatch Calibration for Time-Interleaved ADCs","authors":"Jiajun Qin;Wentao Zhong;Yi Cao;Jiaming Li;Zhe Cao;Lei Zhao","doi":"10.1109/TNS.2024.3422277","DOIUrl":"10.1109/TNS.2024.3422277","url":null,"abstract":"The time-interleaved analog-to-digital conversion (TIADC) technique provides an effective way to achieve high sampling speed. However, a critical challenge in TIADC design arises from the presence of mismatches among parallel sub-analog-to-digital converters (ADCs), which detrimentally affect system performance. In this article, we propose a machine-learning-based method to address these mismatches across a broadband of input signal frequencies. Different from conventional approaches, this method avoids complex and specific matrix operations and reduces the compensation filter order required to achieve a given reconstruction accuracy. To assess the efficacy of our proposed method, we designed a 5-Gs/s 12-bit TIADC system. Through extensive testing, the results demonstrate notable improvements in the effective number of bits (ENOBs) following real-time calibration. Specifically, for input frequencies below 500 MHz, the ENOB surpasses 9 bits, while for frequencies ranging from 500 MHz to 1.25 GHz, it exceeds 8 bits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}