IEEE Transactions on Nuclear Science最新文献

{"title":"PSD-Guided Multi-Template Waveform Saturation Recovery for Wide-Dynamic-Range Fast-Neutron Spectrometry With SiPM Readout","authors":"Yi Guo;Xin-Yi Cai;Meng-Meng Wang;Mei-Hua Fang;Han Yi;Zhi-Yong Wei;Yu-Lian Zhang;Yi-Pan Guo;Ming Zhang;Jia-Feng Li;Zi-Qi Wu","doi":"10.1109/TNS.2026.3707571","DOIUrl":"https://doi.org/10.1109/TNS.2026.3707571","url":null,"abstract":"Fast-neutron response-matrix measurements with organic scintillators require stable energy reconstruction and pulse-shape discrimination (PSD) over a broad recoil-proton signal span. In a silicon photomultiplier (SiPM) readout, analog-to-digital converter (ADC) rail saturation biases charge-based energy estimators and distorts PSD observables, limiting the usable dynamic range. A PSD-guided multi-template recovery framework was developed for wide-dynamic-range operation, targeting forthcoming response-matrix measurements for 1–50 MeV neutrons at the China Spallation Neutron Source (CSNS). In this framework, a template dictionary is built by averaging peak-normalized waveforms within PSD-ratio bins. For each rail-saturated waveform, candidate templates are time-aligned at sub-sample resolution, amplitude-scaled, and ranked by the normalized mean squared error (NMSE) computed on the remaining unsaturated samples, with an additional saturation-consistency constraint. Templates are then updated using reliably reconstructed events with mild saturation, followed by a second recovery pass. Validation with a dual-gain deuterium–tritium (DT) neutron measurement shows that, although channel 1 saturates at ~1.6 MeVee, the proposed recovery extends its effective energy range up to 8.0 MeVee, with the recovered spectrum consistent with the low-gain reference within 1.5–8.0 MeVee; the mean energy deviation of the recovered high-gain channel remains within ~1% relative to the reference. Neutron–gamma PSD classification accuracy exceeds 99.08% after recovery. The method restores saturated pulses with high fidelity within the empirically validated range of <inline-formula> <tex-math>$R_{mathrm {peak}}geq 18%$ </tex-math></inline-formula> under the present detector and readout configuration.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3423-3434"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148748797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Versal ACAP AI Engine Heavy-Ion Testing With Spill Synchronization","authors":"Garrett Smith;Caleb Price;Brigham Morgan;Ted Wilcox;Greg Allen;Michael Wirthlin","doi":"10.1109/TNS.2026.3714665","DOIUrl":"https://doi.org/10.1109/TNS.2026.3714665","url":null,"abstract":"The AMD Versal is a complex heterogeneous architecture that includes programmable logic (PL), multicore processors, and a large array of artificial intelligence (AI) engines. The AI engines are of interest in space applications because they support high-throughput AI inference more efficiently than traditional processors. This article describes a methodology for heavy-ion single-event effect (SEE) testing of all 400 AI engine tiles of the XCVC1902 device simultaneously at the NASA Space Radiation Laboratory (NSRL) facility. The testing approach extracts all AI engine data after each spill of the beam structure to identify the failure modes of each AI engine on a spill-by-spill basis. Heavy-ion cross section estimates obtained from this testing approach are presented for AIE freezing, AIE memory bit upsets, AIE calculation errors, and application processing unit (APU) halting.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3350-3357"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148781495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Imagine a Community Hopeful for the Future: IEEE Foundation","authors":"","doi":"10.1109/TNS.2026.3721716","DOIUrl":"https://doi.org/10.1109/TNS.2026.3721716","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3248-3248"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11657639","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148746962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental Calibration and Validation of Dynamic Voltage-Dependent SET Model in 65 nm CMOS","authors":"Venkata Sathyajith Kampati;Maxim Gorbunov;Zheyi Li;Bastien Vignon;Laurent Berti;Paul Leroux;Jeffrey Prinzie","doi":"10.1109/TNS.2026.3675777","DOIUrl":"https://doi.org/10.1109/TNS.2026.3675777","url":null,"abstract":"This article presents an experimental calibration and validation approach of a dynamic voltage-dependent (DVD) Verilog-A model for simulating single-event transients (SETs) in 65 nm bulk complementary metal-oxide-semiconductor (CMOS) technology. The model, originally derived from calibrated technology computer aided design (TCAD) device simulations, captures the voltage-dependent nature of transient current waveforms resulting from particle strikes. Experimental calibration was performed using a heavy-ion irradiated inverter array implemented in a custom test chip containing eight distinct transistor geometries. Validation was subsequently conducted using a second chip featuring a laser-tested oscillator platform, which includes both a differential ring oscillator (DRO) and a LC-based voltage-controlled oscillator (LC-VCO). The model was experimentally calibrated using only two global tunable parameters, while all other waveform-shape parameters were kept as extracted from the TCAD-based formulation, and it achieved pulsewidth prediction errors below 10% across all inverter configurations. When applied at the oscillator level, it accurately reproduced measured phase perturbations induced by two-photon absorption (TPA) laser strikes. These results confirm the model’s accuracy and broad applicability, offering a compact, scalable solution for SET-aware simulation at both device and system levels.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2812-2821"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct Measurements of Single-Event Burnout Current Induced by Neutron Irradiation in a 1200 V Fast Recovery Diode","authors":"Hikaru Nakamoto;Jun Furuta;Vanness Filbert Cierra;Yoshinari Kamakura;Michitarou Yabuuchi;Hironori Sakamoto;Ryuichi Nakajima;Shuhei Mandai;Kazutoshi Kobayashi;Makoto Sakai;Shigetaka Kumashiro","doi":"10.1109/TNS.2026.3713364","DOIUrl":"https://doi.org/10.1109/TNS.2026.3713364","url":null,"abstract":"This work investigates single-event burnout (SEB) in a 1200 V Si fast recovery diode (FRD) through neutron irradiation experiments and device simulations. Transient current and voltage measurements revealed that SEB is not determined by the initial current peak alone but evolves into a destructive state through subsequent carrier multiplication via impact ionization. Statistical measurements at 930 V without parallel capacitance showed that only one in ten irradiation events led to burnout, providing direct experimental evidence that SEB initiation is governed by stochastic upward fluctuations in impact ionization rather than by a deterministic threshold. Cross-sectional analyses provide a quantitative comparison of damage patterns under different parallel capacitances. To reproduce the experimental measurements in device simulations, worst-case secondary-ion conditions were extracted using the particle and heavy ion transport code system (PHITS) and applied in TCAD. Default TCAD with the van Overstraeten-de Man avalanche model underestimated both the peak and persistence of SEB currents. However, by modifying the avalanche parameter so that the ionization coefficient is evaluated at an effective electric field 1.41 times larger than usual, and by applying a linear energy transfer (LET) multiplier of 30 to compensate for the missing carrier formation energy, the simulated current quantitatively matched the measured sharp rise and sustained current growth. While fully quantifying the exact factor of 30 remains a subject for future work, the issue of initial energy is considered one of the potential factors necessitating this large scaling to phenomenologically compensate for standard TCAD limitations. These results provide a quantitative reproduction of SEB current under neutron irradiation and establish a practical framework for understanding the stochastic nature of burnout.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2881-2890"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Event Transient Pulse Widths at 7-, 5-, and 3-nm Bulk FinFET Nodes","authors":"Jenna B. Kronenberg;Yoni Xiong;Nicholas J. Pieper;Dennis R. Ball;Bharat L. Bhuva","doi":"10.1109/TNS.2026.3660219","DOIUrl":"https://doi.org/10.1109/TNS.2026.3660219","url":null,"abstract":"Single-event transient (SET) pulses in 3-, 5-, and 7-nm combinational logic circuits and corresponding single-event (SE) cross sections were obtained using SET filter circuits. Results show increased SET pulsewidth with transistor scaling. This work characterizes SET pulse widths as a function of supply voltage, particle LET, temperature, and technology.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2746-2751"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Flow Matching-Based Framework for Rapid Prediction of SGEMP Electron Emission Parameters","authors":"Xuedong Wang;Lihui Han;Jinhui Zhu;Yinghong Zuo;Li Liu;Shengli Niu;Jun Zhuo;Jianguo Wang","doi":"10.1109/TNS.2026.3707846","DOIUrl":"https://doi.org/10.1109/TNS.2026.3707846","url":null,"abstract":"Accurate and efficient computation of electron emission parameters following X-ray interactions with system structures is paramount for the assessment of system-generated electromagnetic pulse (SGEMP) effects. To this end, this study constructs a generative deep learning framework based on flow-matching (FM) techniques and designs and implements a neural network model incorporating multi-head cross-attention (MHCA) mechanisms. The model is trained using extensive Monte Carlo (MC) simulation results to learn the probability mapping from a standard Gaussian distribution to complex electron emission characteristics. It efficiently generates energy spectra and angular distributions of emitted electrons by solving an ordinary differential equation (ODE) and utilizing physical parameters such as X-ray incidence angle, X-ray energy, X-ray mean free path (MFP), target material thickness, and specified electron energy or angle intervals as conditional inputs. Evaluation results demonstrate that the model exhibits excellent predictive accuracy on the test set. The coefficients of determination (<inline-formula> <tex-math>$R^{2}$ </tex-math></inline-formula>) for the backward electron energy spectra and angular distributions, as well as for the forward electron energy spectrum and angular distributions, reached 0.994, 0.993, 0.960, and 0.961, respectively, fully validating the model’s accuracy in capturing complex physical mapping relationships. Furthermore, the model exhibits robust modeling capabilities for electron emission characteristics even under a complex incident X-ray blackbody radiation spectrum, thereby providing effective technical support for the rapid and accurate assessment of SGEMP effects.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3307-3321"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facility Intercomparison Toward Reliable Very-High-Energy Heavy Ion Dosimetry for Space Electronics Testing at CERN","authors":"Natalia Emriskova;Andreas Waets;Trevor Olsen;Rubén García Alía;Daniel Söderström;Mario Sacristán Barbero;Matteo Cecchetto;Federico Ravotti;Giuseppe Pezzullo;Marc Delrieux;Kacper Biłko;Tim Wagner;Christoph Schuy;Michael Sivertz;David Inzalaco;Malcolm McCarthy;Xiaodong Jiang;Satoshi Kodaira;Frédéric Saigné","doi":"10.1109/TNS.2026.3702900","DOIUrl":"https://doi.org/10.1109/TNS.2026.3702900","url":null,"abstract":"The qualification of space electronics increasingly relies on very-high-energy heavy ion (VHEHI) beams, which provide deep penetration and high linear energy transfer (LET), enabling realistic testing of complex, packaged commercial off-the-shelf (COTS) components or full boards. However, dosimetry at these energies remains challenging, and harmonized approaches across facilities are lacking. A dosimetry method combining energy deposition spectra measured by a commercial silicon detector with FLUKA Monte Carlo (MC) simulations was previously developed and benchmarked at CERN within the EU-funded high-energy accelerators for radiation testing and shielding (HEARTS) project. In this work, the method was validated through a systematic intercomparison of four leading VHEHI facilities: GSI, HIMAC, NSRL, and CERN. Across all facilities, a strong linear correlation between measured and simulated peak energy deposition values was consistently observed, demonstrating the robustness of the approach for reliable LET extraction. Facility-specific insights were obtained: accelerator energy variation is preferable to heavy degradation to minimize LET spread, heavier ions outperform degraded lighter ions, and CERN’s tailored lead-ion beams now provide LET coverage comparable to reference facilities. Complementary pulse shape analysis further identified detector-related artifacts and allowed refinement of the measured energy deposition spectra. This work establishes a validated framework for unified VHEHI dosimetry, supporting the harmonization of test protocols and enabling reliable radiation effects qualification of next-generation space electronics with VHEHI beams in Europe and worldwide.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3229-3240"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11570967","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148748225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stochastic Framework for Extracting Worst Case Test Vectors in ASICs Under Single-Event Effects","authors":"Mostafa M. Abdelrazik;Mostafa A. Hemeda;Ahmed I. Mohamed;Rawan A. Elomda;Mostafa M. Ghouneem;Ahmed A. Abou-Auf","doi":"10.1109/TNS.2026.3701522","DOIUrl":"https://doi.org/10.1109/TNS.2026.3701522","url":null,"abstract":"We present a stochastic framework for identifying worst-case test vectors (WCTVs) that maximize the single-event transient (SET) vulnerability in application-specific integrated circuits (ASICs). The proposed approach integrates cell-level SET sensitivity modeling with probabilistic transfer matrices (PTMs) and a novel Euclidean-norm error metric to systematically evaluate thousands of candidate vectors derived from industry-standard test suites. For each test vector, stimulus probabilities are propagated through gate-level netlists (based on XFAB XH018 technology) to quantify primary-output perturbations relative to error-free baselines. The framework has been rigorously validated using Cadence Virtuoso transient simulations on ISCAS’85 benchmark circuits. Results show that the proposed methodology achieves accuracy comparable to transistor-level simulation while reducing computational cost by several orders of magnitude. In addition, the automated flow ensures scalability to complex ASIC designs. Results demonstrate that WCTVs induce <inline-formula> <tex-math>$2.2times $ </tex-math></inline-formula> more errors (SET-sensitive nodes) than random vectors, leading to a 56% reduction in conservative mean time between failures (MTBFs) estimates, highlighting the necessity of worst-case analysis for radiation hardness assurance. We show that neglecting worst-case analysis leads to systematically overstated reliability projections in radiation environments, highlighting the necessity of WCTV-based hardness assurance for mission-critical ASICs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2822-2829"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148749294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recovery From Displacement Damage on CMOS Image Sensors Through Laser Annealing","authors":"Chenyu Zhang;Bingkai Liu;Lin Wen;Qi Guo;Jie Feng;Yihao Cui;Zitao Zhao;Pan Chen;Yudong Li","doi":"10.1109/TNS.2026.3709523","DOIUrl":"https://doi.org/10.1109/TNS.2026.3709523","url":null,"abstract":"This article reports laser annealing as an alternative annealing method for displacement damage (DD) on CMOS image sensors (CISs). Laser annealing was carried out on proton-irradiated CIS with suitable laser parameters (such as laser power and annealing time). It is shown that DD-induced dark current increase, hot pixels, and random telegraph signal (RTS) pixels are effectively recovered through laser annealing. Moreover, charge-to-voltage conversion factor and quantum efficiency (QE) do not change before and after laser annealing, suggesting that laser annealing has no adverse effects on the imaging performance of CIS. The comparison between laser annealing and equivalent thermal annealing was conducted to quantify the contribution of thermal effects to the entire annealing. It is confirmed that the contribution proportion of thermal effects to the entire annealing is 40% for the considered laser parameters, and that the remaining contribution is due to the carrier injection effect.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3376-3384"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148749684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}