IEEE Transactions on Nuclear Science最新文献

{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2024.3525437","DOIUrl":"https://doi.org/10.1109/TNS.2024.3525437","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"C2-C2"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10847060","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Announcing the New Senior Editor for Nuclear Power Instrumentation and Control","authors":"Zane W. Bell","doi":"10.1109/TNS.2024.3513632","DOIUrl":"https://doi.org/10.1109/TNS.2024.3513632","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"2-2"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10846961","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling of Doped Fully Depleted Behavior Induced by Total Ionizing Dose in Voltage Reference Circuits From a 65-nm Partially Depleted SOI Technology","authors":"J. Lomonaco;N. Rostand;S. Martinie;G. Charbonnier;C. Marcandella;T. Bedecarrats;A. Bournel","doi":"10.1109/TNS.2025.3531687","DOIUrl":"https://doi.org/10.1109/TNS.2025.3531687","url":null,"abstract":"In this article, a doped fully depleted silicon on insulator (FDSOI) behavior for the 65-nm partially depleted silicon on insulator (PDSOI) technology is demonstrated to understand the output voltage shift of a voltage reference (VR) undergoing dose deposition in real time. From an in-depth top-bottom analysis, including both experiments and technology computer aided design (TCAD)/simulation program with integrated circuit emphasis (SPICE) simulations, we highlighted this unexpected doped FDSOI behavior. This study shows how it worsens the total ionizing dose (TID) effects due to the coupling effect between the front and back interfaces, not usual in this technology. A new threshold voltage model considering channel doping and TID is developed, showing how doping concentration is an important hardening parameter. This model is reused, in a multiscale approach, to reproduce the output voltage shift of a VR based on the PDSOI transistor degradation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1276-1284"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Displacement Damage and Ionization Effects on Waveguide-Integrated Germanium-Silicon p-i-n Photodiodes","authors":"Kellen P. Arnold;Solomon Musibau;Hannah M. Dattilo;Hayden J. Sutton;Steven L. Frankowski;Mathias Berciano;En Xia Zhang;Michael W. McCurdy;Miguel L. Crespillo;Khalid Hattar;Artemisia Tsiara;Dimitri Linten;Kristof Croes;Joris Van Campenhout;Ronald D. Schrimpf;Daniel M. Fleetwood;Robert A. Reed;Sharon M. Weiss","doi":"10.1109/TNS.2025.3532086","DOIUrl":"https://doi.org/10.1109/TNS.2025.3532086","url":null,"abstract":"On-chip germanium-silicon (Ge-Si) photodiodes are critical elements in advancing the inclusion of silicon photonics in integrated circuit design. Understanding their radiation tolerance is essential for use in instrumentation that is operated in harsh environments, where the benefits of photonic integrated circuits (PICs) on performance and compactness are increasingly advantageous. Effects of contact configuration and geometry on waveguide-integrated Ge-Si photodiodes under 1.8-MeV proton and 10-keV X-ray irradiation are studied. Modest operating dark current increases up to 35 nA or 4.25 dB resulting from nonradiative defect center generation and ionization-induced traps. Radiation sensitivities are compared to thermal effects on performance, supporting the relative robustness of Ge-Si photodiodes to radiation. Annealing testing is performed to evaluate interface trap stability due to total ionizing dose (TID), which is dependent on the specific design of the photodiode. The increases in photodiode noise floors are modest overall but are important to design strategies for space and accelerator environments, especially as performance requirements and circuit complexity of integrated photonic technologies increase.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1181-1190"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Search for Editor-in-Chief","authors":"Zane W. Bell","doi":"10.1109/TNS.2025.3528697","DOIUrl":"https://doi.org/10.1109/TNS.2025.3528697","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"1-1"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10846960","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Effects in Quanta Image Sensors","authors":"Joanna Krynski;Alexandre Neyret;Vivian Bernard;Valérian Lalucaa;Alexandre Le Roch;Alex Materne;Cédric Virmontois;Vincent Goiffon","doi":"10.1109/TNS.2025.3531409","DOIUrl":"https://doi.org/10.1109/TNS.2025.3531409","url":null,"abstract":"The quanta image sensor (QIS) is a promising emerging technology for ultralow-light imaging (<10> <tex-math>$/$ </tex-math></inline-formula>s per pixel per frame) due to its extremely low dark current and deep subelectron read noise, thus enabling single photoelectron resolution. These characteristics are further coupled with the benefits of CMOS technology processing, such as low power consumption and array sizes on the order of megapixels exhibiting good pixel uniformity. With growing interest in the use of these sensors for space missions, the vulnerability of QIS pixels to radiation is still an open question. To this end, we explore the effects of proton and neutron irradiation on a commercially available QIS camera up to a fluence of <inline-formula> <tex-math>$2 times 10^{11}~text {particles}/text {cm}^{2}$ </tex-math></inline-formula>. Results show that dark current changes in the QIS are similar to those in conventional, nonphotoelectron-resolving CMOS image sensors (CISs) under nonionizing radiation. The continued applicability of the universal damage factor (UDF) for displacement damage in silicon to this new technology, as well as to subzero temperatures and at various annealing times, is demonstrated. An extension of the empirical model on dark current increase and random telegraph signal (RTS) amplitudes to low temperatures is also investigated. Total-ionizing dose (TID) effects related to the sensor noise are also observed in the cameras irradiated with protons: column noise and fixed pattern noise (FPN) are found to increase with proton fluence. We present histograms of the quantization of signal in dark and light conditions, demonstrating the QIS’ continued ability to count photons after the highest fluence. However, radiation-induced increases in noise will contribute to the mistaking of dark electrons as photons. Provided that the integration time is small enough to limit the collection of carriers generated by bulk defects in the photodiode (PD), TID effects in the readout circuitry are the main obstacles to accurate photon counting.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1198-1207"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3525438","DOIUrl":"https://doi.org/10.1109/TNS.2024.3525438","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 1","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10847059","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ARC-DPA 1-MeV Neutron Fluence Equivalence Model for GaAs","authors":"Nicholas Asper;Jesse Jones","doi":"10.1109/TNS.2025.3531319","DOIUrl":"https://doi.org/10.1109/TNS.2025.3531319","url":null,"abstract":"The legacy data used in the production of the American Society for Testing and Materials (ASTM) E722 standard for gallium arsenide (GaAs) were fit with the athermal recombination corrected-displacements per atom (ARC-DPA) model for the development of a novel 1-MeV neutron equivalent fluence metric. Improving on previous work, the coefficients for the ARC-DPA model were optimized using a conjugate gradient method, and the uncertainties in the observed damage in different benchmark neutron fields were sampled to quantify their contribution to the damage metric. The optimized parameters of <inline-formula> <tex-math>$- 0.474~pm ~0.03$ </tex-math></inline-formula> for <inline-formula> <tex-math>$b_{text {arcdpa}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$0.016~pm ~0.002$ </tex-math></inline-formula> for <inline-formula> <tex-math>$c_{text {arcdpa}}$ </tex-math></inline-formula> provided good agreement and indicated that the solution is not sensitive to the corresponding fluence uncertainties. Compared to the current 1-MeV neutron fluence equivalence standard for displacement damage in GaAs, our results indicate that for a thermal reactor neutron environment, displacement damage has been underestimated by around 25% and that the saturation value for the damage efficiency had been higher than previously modeled.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1335-1342"},"PeriodicalIF":1.9,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs","authors":"K. Niskanen;C. Martinella;A. Sengupta;P. M. Harris;A. F. Witulski;H. Kettunen;A. Javanainen","doi":"10.1109/TNS.2025.3531204","DOIUrl":"https://doi.org/10.1109/TNS.2025.3531204","url":null,"abstract":"Temperature dependence of the heavy-ion-induced leakage current in silicon carbide (SiC) power MOSFETs has been studied. The devices exhibit an order of magnitude lower degradation rate for drain current at elevated temperatures compared to the values measured at room temperature. The degradation rates at different drain voltages and different temperatures were determined. The effect of temperature on the degradation of device parameters is presented, and the degradation mechanisms and implications to the power applications in radiation environments are discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1303-1308"},"PeriodicalIF":1.9,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844935","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-Event Functional Interrupt Mapping of cm-Size Microprocessor Using Ion Microbeam","authors":"Jinlong Guo;Wenbo Tian;Guangbo Mao;Hongjun You;Can Zhao;Ruqun Wu;Wenjing Liu;Cheng Shen;Hongjin Mou;Lei Zhang;Guanghua Du","doi":"10.1109/TNS.2025.3530568","DOIUrl":"https://doi.org/10.1109/TNS.2025.3530568","url":null,"abstract":"Single-event functional interrupts (SEFIs) in microprocessors (MPUs) due to high-energy space radiation have important implications for the reliability and safety of spaceborne systems. To study the system-level SEFI of the commercially available MPC750 MPU, which has promising aerospace applications, a large-size hybrid mapping method was established based on a high-energy heavy-ion microbeam platform. SEFI-sensitive areas across the centimeter-size die were then mapped using the krypton ion microbeam in conjunction with the decrypted device layout. Additionally, detailed SEFI cross sections, generation conditions, and propagation mechanisms were analyzed, highlighting the significance of the exception model in SEFI generation and mitigation. This investigation provides valuable insights into radiation reliability and radiation-hardening design for the MPC750 and Harvard Architecture MPUs in space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"125-132"},"PeriodicalIF":1.9,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}