IEEE Transactions on Nuclear Science最新文献

{"title":"TID Effects in Vertical SiC Power MOSFETs Irradiated at Different Temperatures","authors":"Gabriele Andreetta;Corinna Martinella;Philipp Natzke;Marta Bagatin;Simone Gerardin;Serena Mattiazzo;Alessandro Paccagnella;Ulrike Grossner;Stefano Bonaldo","doi":"10.1109/TNS.2026.3655093","DOIUrl":"https://doi.org/10.1109/TNS.2026.3655093","url":null,"abstract":"The capability to operate at high temperature of silicon carbide (SiC) power MOSFETs makes it essential to assess radiation-induced damage under realistic operating conditions to ensure reliable evaluations of device robustness. This study investigates the total ionizing dose (TID) effects induced by X-rays at different temperatures in vertical SiC power MOSFETs. Irradiation at high temperatures results in smaller threshold voltage (<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>) degradation than at room temperature (RT), due to enhanced recombination of positive trapped charge during exposure. Nonetheless, when high-temperature annealing is performed after the exposure, the final threshold voltage shift (<inline-formula> <tex-math>$Delta V_{mathrm {TH}}$ </tex-math></inline-formula>) is independent of the irradiation temperature and solely dependent on the temperature selected for the annealing process. The negligible degradation observed in subthreshold swing, transconductance, and <inline-formula> <tex-math>$C$ </tex-math></inline-formula>-<inline-formula> <tex-math>$V$ </tex-math></inline-formula> stretch-out indicates minimal activation of interface traps at the SiC/SiO₂ interface, confirming improved interface quality in the latest generation devices.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2840-2847"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11358769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148746890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Charge Collection Prediction and Analysis in 3 nm FinFET Using the Ambipolar Diffusion With a-Cutoff Model","authors":"Sayah El Hajji;Gilles Gasiot;Thomas Thery;Vincent Correas;Nicholas J. Pieper;Yoni Xiong;Jenna B. Kronenberg;Jean-Luc Autran;Bharat L. Bhuva;Davide Pandini;Victor Malherbe;Philippe Roche","doi":"10.1109/TNS.2026.3695896","DOIUrl":"https://doi.org/10.1109/TNS.2026.3695896","url":null,"abstract":"Simulation of the radiation response of advanced 3-D CMOS technologies, such as FinFET and gate-all-around technologies, requires more expressive charge transport and collection models. This is necessary to adapt to complex geometries, while keeping computational efficiency suitable for industrial Monte Carlo workloads. In this work, the ambipolar diffusion with a-cutoff (ADC) model is reviewed and identified as a suitable candidate for such purpose. For the first time, a practical implementation able to seamlessly simulate complex and various standard cells is proposed. This refined model is then integrated in the industrial Monte Carlo simulator TIARA and applied to 3 nm FinFET flip-flop designs. Charge collection mechanisms in FinFET are discussed, along with the influence of process and design features, including comparison between FinFET generations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2767-2777"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148746993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"NORM on ASBM: Probing the High-Energy Radiation Environment From a Unique Orbit","authors":"I. Sandberg;C. Papadimitriou;S. Aminalragia-Giamini;C. Katsavrias;S. Benoit;G. Mæhlum;R. Al Jebali;T. A. Stein;G. Santin;M. Sgammini;E. Guyader","doi":"10.1109/TNS.2026.3653177","DOIUrl":"https://doi.org/10.1109/TNS.2026.3653177","url":null,"abstract":"The first Norwegian radiation monitor (NORM) sensor unit, flying aboard the Arctic Satellite Broadband Mission (ASBM), provides critical information on the space radiation environment along its three-apogee (TAP), 16-h highly elliptical orbit (HEO). This work reviews the first year of NORM measurements, presenting the first detailed evaluation, analysis, and validation of radiation environment measurements along the TAP orbit, specifically focusing on trapped electrons and solar particle radiation. A series of validation studies demonstrates the inter-consistency of NORM measurements relative to the unit’s on-ground and numerical calibration, as well as with measurements from other radiation monitors. In addition, comparisons between NORM flux measurements and electron radiation belt specification models are presented. The results show that NORM provides high-quality and high-resolution measurements of varying electron differential fluxes within the 0.7–5.3 MeV energy range. Furthermore, NORM provides high-quality differential flux measurements of solar energetic protons within the 12–88 MeV energy range. ASBM/NORM datasets are available to EU users and collaborators, providing an invaluable asset for developing and validating space radiation environment models.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2992-3003"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11346816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Uncovering Fault Behavior in Arm Cortex-M Microprocessors With Core Flight System Under Neutron Radiation","authors":"Leonardo Gobatto;Fabio Benevenuti;Luiz Henrique Laurini;Benjamin Cheymol;Rodrigo Possamai Bastos;Fernanda L. Kastensmidt;Jose Rodrigo Azambuja","doi":"10.1109/TNS.2026.3663046","DOIUrl":"https://doi.org/10.1109/TNS.2026.3663046","url":null,"abstract":"Motivated by the increasing adoption of commercial off-the-shelf (COTS) microcontrollers in new space missions, this work investigates the behavior of the Arm Cortex-M system-on-chip (SoC) running computational workloads under FreeRTOS with the Core Flight System (cFS) middleware. The research focuses on how cFS interactions and cache configurations influence fault behavior under neutron irradiation. The experiments reveal that incorporating a cache significantly increases all software failure rates and that adding cFS leads to a higher incidence of I/O-related timeouts. Postmortem analysis of processor states indicated that many timeout events were not indicative of actual operational errors but rather triggers of hardware and software exceptions. Detailed execution tracing revealed that these timeouts were exceptions, and enabling the CPU cache fundamentally altered the fault profile. This finding underscores the importance of understanding how OS-level fault detection and recovery contribute to system reliability under radiation-induced stress.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"2925-2934"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of In-System Performance of Point-of-Load Power Converters During System-Level Irradiation","authors":"Ivan Slipukhin;Rubén García Alía;Frédéric Saigné;Jérôme Boch;Luigi Dilillo;Daniel Prelipcean;Matteo Cecchetto;Carlo Cazzaniga;Maria Kastriotou;Salvatore Fiore;Jérôme Lendaro","doi":"10.1109/TNS.2026.3712079","DOIUrl":"https://doi.org/10.1109/TNS.2026.3712079","url":null,"abstract":"This article introduces a new approach for system-level observation during radiation testing, which is based on the in-system monitoring of analog signals. The verification of the test method is performed using an example mixed-signal system, in which the sampled signals are the outputs of the point-of-load (PoL) power regulators. The collected data are then used to analyze the in-system performance of electronic components and establish the connection between system-level failures and device-level radiation-induced effects. Moreover, the contribution of single-event effects (SEEs) taking place in specific power converters to the overall system-level failure rate was determined. The presented analysis concerns the results of three test campaigns, where the designed observation approach was verified within different radiation environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3138-3148"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11603826","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Applicability of Displacement Damage Equivalence Method in InP/InGaAs Avalanche Photodiodes Under Various Particle Irradiations","authors":"Yang Song;Yadong Wei;Xiaodong Xu;Hao Jiang;Hui Wang;Jianqun Yang;Weiqi Li;Xingji Li","doi":"10.1109/TNS.2026.3712479","DOIUrl":"https://doi.org/10.1109/TNS.2026.3712479","url":null,"abstract":"InP/InGaAs avalanche photodiodes (InP APDs) have broad application prospects in space communications and LiDAR. However, radiation damage caused by various particles in space can compromise their performance. The displacement damage equivalence method is commonly used to analyze the radiation damage equivalence of different particles, and it plays a significant role in the space application of devices. The dark currents of InP APDs are measured under irradiations of 23 MeV O ions, 30 MeV F ions, 30 MeV Si ions, 33 MeV Cl ions, 3 MeV protons, and 1 MeV electrons. The displacement damage dose (DDD) of different particles is calculated to evaluate the displacement damage equivalence of the dark current in InP APDs. The fitting results show that there is a nonlinear relationship between the damage factor (<inline-formula> <tex-math>$K$ </tex-math></inline-formula>) and the non-ionizing energy loss (NIEL) in InP APDs. The extraction results of the dark current activation energy indicate that the diversity of current components is responsible for the nonlinear relationship between <inline-formula> <tex-math>$K$ </tex-math></inline-formula> and <italic>NIEL</i>. The complex structure of InP APDs leads to a variety of defect types and states, which may make the damage equivalence method inapplicable. The relationship between them deserves further study.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3405-3413"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SEU-Induced Bitflips of 7-Series FPGA Under Fast Neutron Irradiation","authors":"L. Shoen;Q. Hetrick;P. Kandlakunta;L. R. Cao","doi":"10.1109/TNS.2026.3710120","DOIUrl":"https://doi.org/10.1109/TNS.2026.3710120","url":null,"abstract":"Radiation-induced soft errors from single event effects (SEEs), such as single event transients (SETs) and single event upsets (SEUs), can cause bitflips or faults, potentially leading to data corruption or system failure in safety critical applications if unmitigated. In this work, we discuss a methodology for evaluating soft errors introduced by SEEs and characterizing the radiation upset sensitivity of 7-series static random access memory (SRAM)-based field programmable gate arrays (FPGAs) in the context of nuclear power plant (NPP) instrumentation and control (I and C) applications. A cross-sectional error model was developed using fast neutron irradiation experiments, which informs statistical models for error probabilities of bitflips in the target FPGA device. Fuzz testing was used to correlate the bitstream structure to the physical on-board location of configurable logic blocks (CLBs), programmable interconnect points (PIPs), and digital signal processing (DSP) tiles. The cross section for SEU-induced bitflips in the tested SRAM-FPGA for ~2-MeV neutrons was estimated as <inline-formula> <tex-math>$1.68times 10^{-15}~$ </tex-math></inline-formula>cm²/bit from reactor neutron irradiation experiments. The tile type with the largest tile-normalized cross section was determined as a look-up table (LUT) at <inline-formula> <tex-math>$4.06times 10^{-15}~$ </tex-math></inline-formula>cm²/bit, and the tile type with the largest bitstream-normalized cross section was found to be INT at <inline-formula> <tex-math>$9.50times 10^{-16}~$ </tex-math></inline-formula>cm²/bit, with uncertainty intervals overlapping those of other resource types.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3396-3404"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11595775","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"LED Lighting Influence on the Radiation Response of Erbium-Doped Fiber Amplifiers","authors":"A. Facchini;L. Weninger;A. Morana;L. Mescia;T. Robin;J. Mekki;N. Kerboub;A. Boukenter;E. Marin;Y. Ouerdane;S. Girard","doi":"10.1109/TNS.2026.3669659","DOIUrl":"https://doi.org/10.1109/TNS.2026.3669659","url":null,"abstract":"We studied the radiation response of two different erbium-doped fiber amplifiers (EDFAs) based on radiation-hardened optical fibers when an external light-emitting diode (LED) lighting is used to photobleach these fibers to limit the radiation-induced attenuation (RIA) and then the amplifier gain degradation (GD). Noticeable results in terms of RIA and GD reduction are achieved by using LED lighting; however, the best results were achieved through the combination of blue LED lighting with pump injection into the tested fibers.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3149-3158"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148749046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Effects Specific to State-of-the-Art Global Shutter CMOS Image Sensors","authors":"A. Jouni;A. Vriet;L.-S. How;A.-S. Merlenghi;F. Berthet;S. Kowaltschek;M. Beaumel","doi":"10.1109/TNS.2026.3674638","DOIUrl":"https://doi.org/10.1109/TNS.2026.3674638","url":null,"abstract":"Radiation-induced degradation arising from the operation principle of global shutter (GS) CMOS image sensors (CISs) is studied. The study is focused on voltage domain and charge domain pixels irradiated with <inline-formula> <tex-math>$boldsymbol {gamma }$ </tex-math></inline-formula>-rays up to 50.2 krad and 62-MeV protons with displacement damage doses (DDDs) reaching 1492 TeV/g. Increased charge generation rate in voltage and charge domain pixels’ memory nodes (MNs), and thus increased parasitic storage node leakage (PSNL), are highlighted. For the charge domain XGS16M detector, the PSNL degradation is explained by the increasing number of charges in the storage node before the row readout, due to radiation-induced interface traps and defect clusters within the silicon volume. HDPYX330-G charge domain pixels, embedding capacitive deep trench isolation (CDTI) technology and vertical storage of charges during the sensor readout, are less sensitive to total ionizing dose (TID) effects but more vulnerable to DDD due to a deeper silicon volume in the MN area. For the CMV2000 voltage domain detector, asymmetries in the MN architecture using two collecting capacitors lead to a mean PSNL increase and PSNL nonuniformity (PSNLNU), meaning the increase in the row standard deviation with the readout. On the other hand, parasitic light sensitivity (PLS) is not affected by <inline-formula> <tex-math>$boldsymbol {gamma }$ </tex-math></inline-formula>-ray or proton irradiation for all detector types. The contribution of TID and DDD defects on the pixel MN is distinguished by studying the induced PSNL distributions. Voltage-domain-based pixels seem to exhibit better performances with respect to ionizing radiation compared with charge domain detectors. Furthermore, PSNL distributions indicate that both TID and DDD contribute to PSNL degradation of the two charge domain detectors, but also highlight the lower TID sensitivity of the HDPYX330-G sensor. Finally, activation energy measurements point out the diversity of defects contributing to the PSNL depending on the charge domain detector under study, and thus depending on the MN design. Independently on the type of signal storage before row-by-row readout, PSNL characterizations appear to be mandatory when studying GS CIS under irradiation.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3159-3169"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148749793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pulse Classification and Saturated-Waveform Reconstruction for Dynamic-Range Extension of a LaBr3(Ce) Detection System at the SLEGS Gamma Beamline","authors":"Ming Zhang;Jiafeng Li;Muheng Ding;Zhiyong Wei;Ziqi Wu;Yongli Mou;Yi Guo;Meihua Fang;Yipan Guo;Xinyi Cai","doi":"10.1109/TNS.2026.3713515","DOIUrl":"https://doi.org/10.1109/TNS.2026.3713515","url":null,"abstract":"To mitigate pulse saturation and pile-up in a 1” <inline-formula> <tex-math>$times 1$ </tex-math></inline-formula>” LaBr₃(Ce) detection system exposed to intense 3- and 4-MeV <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray beams at Shanghai Laser Electron Gamma Source (SLEGS), this work presents an offline data-processing framework integrating anomalous-event classification and saturated waveform reconstruction. Saturation-affected candidates were preselected from downward-drifting bands in pulse shape discrimination (PSD)–energy distributions, comprising 28.70% and 25.32% of the raw events, respectively. A secondary fine classification based on first-derivative time-domain features further removed residual pile-up events, yielding single saturated pulses constituting 99.81% and 99.86% of the candidates for subsequent waveform reconstruction. Unsaturated pulses were extracted for average waveform modeling, and a double-exponential (DE) template was identified as the optimal pulse model. An adaptive piecewise weighted nonlinear fitting method reconstructed saturated regions using undistorted rising-edge and tail samples, recovering waveform shape and peak amplitude for mildly to moderately saturated pulses and wide flat-top pulses above 11.4 MeV. Experimental results show that 74.58% and 74.47% of reconstructed events, respectively, achieved low corrected chi-square errors, and more than 99.9% of events within 4.3–11.1 MeV were stably reconstructed. The proposed method extends the reconstructed equivalent-energy range to approximately 27 MeV, corrects the energy-dependent PSD drift, and restores events to a normal pure gamma band centered at 0.343 with a PSD range of 0.329–0.364. The equivalent energy resolutions of the recovered spectra are 44.18% and 40.03%, respectively, outperforming a wide-range unsaturated NaI(Tl) reference detector. Without hardware modification or digitizer-range upgrading, this framework provides a reliable offline data-recovery solution in high-flux gamma-ray measurements.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 8","pages":"3447-3464"},"PeriodicalIF":2.4,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148747187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}