S. Achaq;V. Pouget;L. Artola;G. Hubert;A. Urena;F. Manni;A. Dufour;J. Boch
{"title":"7纳米FinFET片上系统不同SRAM资源的单事件扰动激光测试及其与重离子数据的相关性","authors":"S. Achaq;V. Pouget;L. Artola;G. Hubert;A. Urena;F. Manni;A. Dufour;J. Boch","doi":"10.1109/TNS.2025.3551550","DOIUrl":null,"url":null,"abstract":"We present the single-event upset (SEU) laser testing of different static random access memory (SRAM) resources of a 7-nm fin field-effect transistor (FinFET) programmable system-on-chip (SoC). The results provide original insights into the physical organization of the device, and testing challenges are discussed. Multiple-cell upsets (MCUs) are discussed together with Monte Carlo simulation results. Correlation with heavy ion data is presented and discussed.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1460-1469"},"PeriodicalIF":1.9000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single-Event Upset Laser Testing of Various SRAM Resources of a 7-nm FinFET System-on-Chip and Correlation With Heavy Ion Data\",\"authors\":\"S. Achaq;V. Pouget;L. Artola;G. Hubert;A. Urena;F. Manni;A. Dufour;J. Boch\",\"doi\":\"10.1109/TNS.2025.3551550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the single-event upset (SEU) laser testing of different static random access memory (SRAM) resources of a 7-nm fin field-effect transistor (FinFET) programmable system-on-chip (SoC). The results provide original insights into the physical organization of the device, and testing challenges are discussed. Multiple-cell upsets (MCUs) are discussed together with Monte Carlo simulation results. Correlation with heavy ion data is presented and discussed.\",\"PeriodicalId\":13406,\"journal\":{\"name\":\"IEEE Transactions on Nuclear Science\",\"volume\":\"72 4\",\"pages\":\"1460-1469\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nuclear Science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10926906/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10926906/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Single-Event Upset Laser Testing of Various SRAM Resources of a 7-nm FinFET System-on-Chip and Correlation With Heavy Ion Data
We present the single-event upset (SEU) laser testing of different static random access memory (SRAM) resources of a 7-nm fin field-effect transistor (FinFET) programmable system-on-chip (SoC). The results provide original insights into the physical organization of the device, and testing challenges are discussed. Multiple-cell upsets (MCUs) are discussed together with Monte Carlo simulation results. Correlation with heavy ion data is presented and discussed.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.