IEEE Transactions on Nuclear Science最新文献_第4页

Impact of High-Energy Heavy Ion Irradiation on Spin-Orbit Torque Magnetic Random Access Memory Arrays 高能重离子辐照对自旋轨道转矩磁随机存取存储器阵列的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-27 DOI: 10.1109/TNS.2025.3583702

Jiejie Sun;Chuanpeng Jiang;Jinhao Li;Shiyang Lu;Zhongkui Zhang;He Zhang;Hui Jin;Kaihua Cao;Deming Zhang;Bi Wang;Zhaohao Wang;Youguang Zhang;Weisheng Zhao

{"title":"Impact of High-Energy Heavy Ion Irradiation on Spin-Orbit Torque Magnetic Random Access Memory Arrays","authors":"Jiejie Sun;Chuanpeng Jiang;Jinhao Li;Shiyang Lu;Zhongkui Zhang;He Zhang;Hui Jin;Kaihua Cao;Deming Zhang;Bi Wang;Zhaohao Wang;Youguang Zhang;Weisheng Zhao","doi":"10.1109/TNS.2025.3583702","DOIUrl":"https://doi.org/10.1109/TNS.2025.3583702","url":null,"abstract":"Spin-orbit torque magnetic random access memory (SOT-MRAM) demonstrates significant potential for space applications due to its intrinsic radiation tolerance properties. However, evaluating the reliability of SOT-MRAM arrays integrated with metal-oxide-semiconductor (MOS) under high-energy heavy-ion irradiation remains a critical technical challenge. In this study, we assess the radiation tolerance of the SOT-MRAM arrays using high-energy heavy-ion irradiation sources, including Bi ions (1820 MeV), Ta ions (1332 MeV), and Kr ions (500 MeV). The experimental results indicate that the core electrical parameters of the devices, including the critical switching current (<inline-formula> <tex-math>${I}_{text {C}}$ </tex-math></inline-formula>), the tunneling magnetoresistance (TMR), and the bit error rate (BER), remain excellent in stability under irradiation. Notably, post-irradiation testing revealed several short-circuit failures in the SOT-MRAM array after Bi and Ta ions irradiation. These failures are due to radiation-induced defect formation in MgO tunnel barriers, which creates localized conductive pathways. We propose an approach to improve the radiation tolerance of SOT-MRAM arrays. This research supports the practical application of SOT-MRAM devices in space radiation environments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2893-2899"},"PeriodicalIF":1.9,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A 32-Channel High-Speed High-Spatial-Resolution Front-End ASIC Prototype for the High Current Intensity Beam Positioning Detector 32通道高速高空间分辨率高电流强光束定位检测器前端ASIC原型

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-25 DOI: 10.1109/TNS.2025.3583185

Chaosong Gao;Xiaobing Liu;Yichen Yang;Xiangming Sun;Shiqiang Zhou;Zhen Wang;Hantao Hu;Yujie Li;Qianjun Chen;Xu Wang;Qingpeng Xing;Junshuai Liu;Jingyun Feng;Xin Luo;Zhike Feng;Ping Xu;Hong Zhu

{"title":"A 32-Channel High-Speed High-Spatial-Resolution Front-End ASIC Prototype for the High Current Intensity Beam Positioning Detector","authors":"Chaosong Gao;Xiaobing Liu;Yichen Yang;Xiangming Sun;Shiqiang Zhou;Zhen Wang;Hantao Hu;Yujie Li;Qianjun Chen;Xu Wang;Qingpeng Xing;Junshuai Liu;Jingyun Feng;Xin Luo;Zhike Feng;Ping Xu;Hong Zhu","doi":"10.1109/TNS.2025.3583185","DOIUrl":"https://doi.org/10.1109/TNS.2025.3583185","url":null,"abstract":"This article presents the design and test results of a high speed and high spatial resolution front-end application-specific integrated circuit (ASIC) prototype for the high current intensity beam positioning detector. An ionization chamber is proposed as the beam position detector. For these applications, ionization chambers are normally used, but to improve spatial resolution, we propose to integrate charge collection electrodes (CCEs) in the front-end ASIC prototype. The proposed ASIC prototype has been designed and manufactured in a <inline-formula> <tex-math>$0.18~mu $ </tex-math></inline-formula>m CMOS process. It features 32 channels with a pitch of <inline-formula> <tex-math>$50~mu $ </tex-math></inline-formula>m. Each channel consists of a 1 cm long CCE, an analog front-end (AFE), an analog buffer, and a shift register. Test results show that the AFE has a shaping time of less than 200 ns, a power consumption of about <inline-formula> <tex-math>$473~mu $ </tex-math></inline-formula>W at a 1.8 V power supply, and an equivalent noise charge (ENC) of less than 180 <inline-formula> <tex-math>${mathrm {e}}^{-}$ </tex-math></inline-formula>.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2222-2228"},"PeriodicalIF":1.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Enhancement of Open Circuit Voltage of Diamond Voltaic Battery by Surface Passivation 表面钝化提高金刚石伏打电池开路电压

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-25 DOI: 10.1109/TNS.2025.3582999

Yiyong Zuo;Chuanlong Li;Benjian Liu;Jiwen Zhao;Ziyi Chen;He Jia;Kang Liu;Sen Zhang;Nikolay Rodionov;Bing Dai;Viktor Ralchenko;Jiaqi Zhu

{"title":"Enhancement of Open Circuit Voltage of Diamond Voltaic Battery by Surface Passivation","authors":"Yiyong Zuo;Chuanlong Li;Benjian Liu;Jiwen Zhao;Ziyi Chen;He Jia;Kang Liu;Sen Zhang;Nikolay Rodionov;Bing Dai;Viktor Ralchenko;Jiaqi Zhu","doi":"10.1109/TNS.2025.3582999","DOIUrl":"https://doi.org/10.1109/TNS.2025.3582999","url":null,"abstract":"Nuclear batteries based on the voltaic effect using Schottky diode or p-n junction energy converter are usually named alpha-/beta-voltaic batteries. They present particularly unique properties, making them highly interesting in many key technological applications. Diamond exhibits great potential in designing such high performance alpha-/beta-voltaic batteries and self-powered UV detectors. In this study, we present a novel strategy to create highly efficient diamond Schottky diodes. Our approach consists of incorporating a thin TiO2 layer in the vertical diamond Schottky diode using reactive magnetron sputtering to enhance the barrier height and improve the voltaic performance. Thermionic emission (TE) theory was used to extract the Schottky barrier heights. The extracted value of the improved diode was in good agreement with the Schottky-Mott model. The high open circuit voltages of 1.7 and 1.8 V were obtained using americium-241 and deuterium lamp illumination. The short circuit current density was much higher than device without a TiO2 layer.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2928-2933"},"PeriodicalIF":1.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Heavy-Ion Microbeam Studies of Single-Event Leakage Current Induced by Long- and Short-Range Particles in SiC Power Devices SiC功率器件中长距离和短程粒子诱导单事件泄漏电流的重离子微束研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-20 DOI: 10.1109/TNS.2025.3581671

C. Martinella;S. Peracchi;H. Goncalves de Medeiros;N. Für;M. Belanche;M. Nagel;R. Drury;Z. Pastuovic;K. Voss;U. Grossner

{"title":"Heavy-Ion Microbeam Studies of Single-Event Leakage Current Induced by Long- and Short-Range Particles in SiC Power Devices","authors":"C. Martinella;S. Peracchi;H. Goncalves de Medeiros;N. Für;M. Belanche;M. Nagel;R. Drury;Z. Pastuovic;K. Voss;U. Grossner","doi":"10.1109/TNS.2025.3581671","DOIUrl":"https://doi.org/10.1109/TNS.2025.3581671","url":null,"abstract":"The sensitivity to single event effects (SEEs) of commercial silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes has been assessed on a micrometer scale using a focused microbeam of: 1) long- and 2) short-range particles. Degradation or single event leakage current (SELC) induced by short-range particles was reported for two different generations of SiC power MOSFETs and two generations of JBS diodes. GEANT4 and technology computer aided design (TCAD) simulations have been used to interpret the range dependence of SEEs. Simulations for the SELC condition in a diode structure have shown an increase in E-field and impact ionization due to the particle strike, which could be a driving force in creating permanent defects. Furthermore, no sensitivity to SELC or single event burnout (SEB) was observed in the termination regions or along the gate metal runner of two generations of power MOSFETs. Differences were observed when irradiating the devices on and off the source pad, which were attributed to the shallow ion penetration caused by the additional polyimide layer present in the off-pad region.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2426-2434"},"PeriodicalIF":1.9,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045732","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A Position Sensitive Detector With Real-Time Gamma/Neutron Discrimination Capability 具有实时伽马/中子识别能力的位置敏感探测器

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-20 DOI: 10.1109/TNS.2025.3581712

O. Halfon;C. Riboldi;K. Urban;G. Borghi;M. Carminati;F. Bonforte;M. Donetti;M. Pullia;F. Camera;A. Giaz;C. Fiorini

{"title":"A Position Sensitive Detector With Real-Time Gamma/Neutron Discrimination Capability","authors":"O. Halfon;C. Riboldi;K. Urban;G. Borghi;M. Carminati;F. Bonforte;M. Donetti;M. Pullia;F. Camera;A. Giaz;C. Fiorini","doi":"10.1109/TNS.2025.3581712","DOIUrl":"https://doi.org/10.1109/TNS.2025.3581712","url":null,"abstract":"In recent years, the demand for a gamma and neutron camera with real time discrimination capabilities has emerged in nuclear physics and medical imaging fields. Specifically, in the field of hadrontherapy, prompt gamma imaging (PGI), a technique for range verification purposes, is strongly affected by the presence of a large neutron background, which can limit the possibility to perform precise range monitoring, especially in the framework of carbon ion radiation therapy (CIRT). This work focuses on the design and development of a compact camera with gamma/neutron discrimination to perform range verification in hadrontherapy, exploiting the gamma signal while discarding the uncorrelated neutron component. Thanks to its dual imaging capability, neutron images can still be stored and used in other applications. Pulse shape discrimination (PSD) was selected as the method for gamma/neutron discrimination after evaluating several techniques. Among the available options, we selected a Cs2LiYCl6:Ce (CLYC) inorganic scintillator as the optimal choice to perform PSD. The detector, based on a <inline-formula> <tex-math>$5times 5times 2$ </tex-math></inline-formula> cm CLYC crystal, read out by SiPM tiles and compact electronics, acquires and converts in real time digital PSD coefficients. The use of four 16-channel custom gain amplitude modulation multichannel application-specific integrated circuits (GAMMA ASICs) allows to store the channel’s amplitude information, allowing to retrieve the particle point of interaction in the monolithic crystal and obtaining PSD-resolved images. The system discrimination capability was verified with experimental measurements in the laboratory and beam tests, and a preliminary evaluation of its imaging capability with real-time PSD was successfully conducted.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2215-2221"},"PeriodicalIF":1.9,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045737","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Nuclear Science publication information IEEE核科学汇刊信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-18 DOI: 10.1109/TNS.2025.3577954

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On-Orbit Cross Calibration of Energetic Electron Flux Measurements From Three Chinese Satellites and GPS ns70 and ns71 中国三颗卫星与GPS ns70和ns71高能电子通量的在轨交叉定标

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-18 DOI: 10.1109/TNS.2025.3580760

Jiachen Sun;Hong Zou;Yuguang Ye;Jiali Chen

{"title":"On-Orbit Cross Calibration of Energetic Electron Flux Measurements From Three Chinese Satellites and GPS ns70 and ns71","authors":"Jiachen Sun;Hong Zou;Yuguang Ye;Jiali Chen","doi":"10.1109/TNS.2025.3580760","DOIUrl":"https://doi.org/10.1109/TNS.2025.3580760","url":null,"abstract":"Cross calibration of energetic electron flux measurements from different satellites is essential for understanding the dynamics of the Earth’s radiation belts and for modeling the space radiation environment. In this article, we calibrate and analyze the energetic electron data measured by three Chinese medium Earth orbit (MEO) satellites (M17, M18, and M19) and two global positioning system (GPS) satellites (ns70 and ns71). Strong correlations and consistencies were found between the MEO satellites and GPS satellites using L and magnetic local time (MLT) as binning standards. We show that the measurements from the detectors onboard these satellites are basically the same with a maximum difference of 22% on a logarithmic scale. Finally, a simple calibration based on phase space density (PSD) improves the correlations and consistencies between MEO satellites and GPS, reducing the maximum difference to 2% on a logarithmic scale. It also showed that these satellites are very close to the precise Van Allen probes (VAPs) since GPS had been calibrated by them in a previous study. This will help to fill the significant data gap in MEO and provide crucial insights into particle dynamic variations within the core region (L ~ 5) of radiation belts. It is expected that the availability of data from non-scientific satellites will increase, providing a more comprehensive set of multipoint measurements for scientific research.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2163-2172"},"PeriodicalIF":1.9,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Transactions on Nuclear Science information for authors IEEE核科学汇刊作者信息

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-18 DOI: 10.1109/TNS.2025.3578222

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3D-Printed Plastic Scintillator: A Potential Avenue for Hetero-Structured Radiation Detectors 3d打印塑料闪烁体：异质结构辐射探测器的潜在途径

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-16 DOI: 10.1109/TNS.2025.3580284

V. Anand;P. Krause;B. Bansal;G. Bizarri;G. Anil Kumar;V. Ranga;Varun Sharma

{"title":"3D-Printed Plastic Scintillator: A Potential Avenue for Hetero-Structured Radiation Detectors","authors":"V. Anand;P. Krause;B. Bansal;G. Bizarri;G. Anil Kumar;V. Ranga;Varun Sharma","doi":"10.1109/TNS.2025.3580284","DOIUrl":"https://doi.org/10.1109/TNS.2025.3580284","url":null,"abstract":"The concept of a heterostructure-based scintillation detector has been proposed as a potential alternative to current time-of-flight positron emission tomography (TOF-PET) detectors. In a heterostructure design, a dense scintillator (matrix) works in synergy with a fast-timing light scintillator (filler). The design often includes complex geometries, necessitating precise machining. The application of 3D printing technology can facilitate the fabrication of such complex geometries. This study presents the formulation and fabrication of a 3D-printed plastic scintillator, which has been identified as a potential filler material. The developed scintillator shows better rise and decay times compared to commercial plastic scintillators such as EJ-200. We have measured a coincidence time resolution (CTR) of 225 ps using <inline-formula> <tex-math>$gamma - gamma $ </tex-math></inline-formula> coincidence. Monte-Carlo simulations were performed using the Geant4 toolkit to validate the advantages of using complex filler material designs. The simulation outcomes demonstrate significant improvement in the performance of heterostructures in the case of complex designs over simpler ones. The findings of this study underscore the promise of using 3D printing technology for producing complex heterostructures. This can help in advancing the development of TOF-PET detectors with comparatively reduced effort.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2100-2105"},"PeriodicalIF":1.9,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam 总电离剂量对重离子束辐照SiGe HBT单事件瞬态灵敏度的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-06-13 DOI: 10.1109/TNS.2025.3579400

Jinxin Zhang;Xin Wang;Hongxia Guo;Wojciech Hajdas;Yunyi Yan;Juan Feng;Hui Wang;Xianxiang Wu

{"title":"Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam","authors":"Jinxin Zhang;Xin Wang;Hongxia Guo;Wojciech Hajdas;Yunyi Yan;Juan Feng;Hui Wang;Xianxiang Wu","doi":"10.1109/TNS.2025.3579400","DOIUrl":"https://doi.org/10.1109/TNS.2025.3579400","url":null,"abstract":"The synergistic effects of the total ionizing dose (TID) on sensitivity to a single event transient (SET) of the silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are investigated in a series of irradiation tests. SiGe HBTs with different biases are exposed to 60Co <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-rays up to 1 Mrad(Si). The single-event effect (SEE) transient currents observed with heavy ions at different biases are compared before and after 60Co exposures. Collector transient currents seen during SEE tests are smaller for bias voltages <inline-formula> <tex-math>$V_{!text {C}} = +2$ </tex-math></inline-formula> V and <inline-formula> <tex-math>$V_{!text {C}} =+3$ </tex-math></inline-formula> V in the <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>-ray exposed devices. Reduction levels vary among samples with different bias values used in TID irradiations. Trap charges induced by the TID exposure can affect recombination processes and influence SEE observables seen during irradiations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2799-2807"},"PeriodicalIF":1.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0