IEEE Transactions on Nuclear Science最新文献_第4页

On the Applicability of 48V in Positron Annihilation Lifetime Spectroscopy 论 48V 在正电子湮没寿命光谱中的适用性

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-29 DOI: 10.1109/TNS.2024.3451618

Mircea Lechintan;Nikolay Djourelov

{"title":"On the Applicability of 48V in Positron Annihilation Lifetime Spectroscopy","authors":"Mircea Lechintan;Nikolay Djourelov","doi":"10.1109/TNS.2024.3451618","DOIUrl":"10.1109/TNS.2024.3451618","url":null,"abstract":"The applicability of the 48V isotope as a source of positrons for positron annihilation lifetime spectroscopy (PALS) measurements is discussed. It has been demonstrated that using such a positron source, the classical PALS setup with two detectors does not accurately determine the positron annihilation parameters of the samples being studied. This issue arises when one of the two nuclear gamma rays (of energies of 983 and 1312 keV) that are emitted almost simultaneously with the creation of a positron triggers a start signal, while the other nuclear gamma triggers a stop signal instead of the 511-keV annihilation quanta. These events manifest as prompt coincidences in the start-stop histogram, rendering the analysis of PALS spectra unreliable. To address this problem, a modification to the classical PALS spectrometer was proposed and tested. This modification involved incorporating a logic branch that significantly reduced the undesired prompt coincidences between the 983- and 1312-keV gamma rays. By conducting measurements on a series of samples utilizing 2- and 25-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000 m-thick Ti foils enriched with 48V, it was demonstrated that the altered setup reliably extracts accurate information on the positron annihilation states within the samples being examined.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10659162","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Review of Single-Event Upset-Rate Calculation Methods 单次事件突发率计算方法评述

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-28 DOI: 10.1109/tns.2024.3451312

D.L. Hansen, T. Manich, I. Zavatkay

引用次数: 0

Measuring Performance Under Failures in the LHCb Data Acquisition Network 测量大型强子对撞机数据采集网络故障下的性能

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-28 DOI: 10.1109/tns.2024.3451177

Eloïse Stein, Flavio Pisani, Tommaso Colombo, Cristel Pelsser

引用次数: 0

Network-distributed Data Acquisition System for Photoproduction Experiments with LEPS2 利用 LEPS2 进行光生产实验的网络分布式数据采集系统

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-27 DOI: 10.1109/tns.2024.3450730

Sun Young Ryu, Shoji Ajimura, Ryo Kobayakawa, Keigo Mizutani, Masaru Yosoi, Ken Watanabe, Yuta Sada, Tomoaki Hotta, Takatsugu Ishikawa, Masayuki Niiyama, Jung Keun Ahn

引用次数: 0

LELAPE: An Open-Source Tool to Classify SEUs According to Their Multiplicity in Radiation-Ground Tests on Memories LELAPE：根据存储器辐射地面测试中的 SEUs 倍率对其进行分类的开源工具

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-27 DOI: 10.1109/TNS.2024.3450607

Juan A. Clemente;Mohammadreza Rezaei;Juan C. Fabero;Hortensia Mecha;Francisco J. Franco

{"title":"LELAPE: An Open-Source Tool to Classify SEUs According to Their Multiplicity in Radiation-Ground Tests on Memories","authors":"Juan A. Clemente;Mohammadreza Rezaei;Juan C. Fabero;Hortensia Mecha;Francisco J. Franco","doi":"10.1109/TNS.2024.3450607","DOIUrl":"10.1109/TNS.2024.3450607","url":null,"abstract":"This article presents Listas de Eventos Localizando Anomalías al Preparar Estadísticas (LELAPE), an easy-to-use tool that aims at classifying the single-event upsets (SEUs) that were observed in radiation-ground experiments on a memory or a field-programmable gate array (FPGA) into single-bit upsets (SBUs) and multiple-cell upsets (MCUs) with various multiplicities. This tool takes as input one or several datasets obtained in radiation experiments and returns as output the list of events that were identified, without any limitation on the type of device (SRAMs, DRAMs, PSRAMs, FPGAs, and so on) or manufacturing technology (planar, FinFET, and so on). The classification method used consists in analyzing statistical anomalies found in the input dataset(s) that would not be found in a theoretical scenario where only single-bit upsets (SBUs) can occur. It will be proven that the prediction accuracy attained is very high, by using data issued from actual experiments carried out by the authors on several SRAMs under protons and neutrons with various energies. This tool has been made available to the Community through a Zenodo repository and protected by the European Union Public License (EUPL).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10649596","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Low-Complexity MLSE Algorithm for the NRZ High-Speed Transceivers 用于 NRZ 高速收发器的低复杂度 MLSE 算法

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-26 DOI: 10.1109/tns.2024.3449553

Dongwei Zou, Kezhu Song, Xiangshi Zhong, Chengyang Zhu, Zhuo Chen, Yunyao Yu

引用次数: 0

Study on Readout Electronics of CEPC Scintillator Analog Hadronic Calorimeter Prototype CEPC 闪烁器模拟强子量热计原型的读出电子装置研究

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-26 DOI: 10.1109/tns.2024.3449282

Zhongtao Shen, Shubin Liu, Anshun Zhou, Hao Liu, Yukun Shi, Yunlong Zhang

引用次数: 0

Efficient and Accurate Optimal Design Method for Radiation Shielding 高效准确的辐射屏蔽优化设计方法

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-26 DOI: 10.1109/tns.2024.3449891

Yu Han, Tao Ying, He Zhu, Jianqun Yang, Xingji Li

引用次数: 0

Alphavoltaic Performance of 4H-SiC Schottky Barrier Diodes 4H-SiC 肖特基势垒二极管的阿尔法光伏性能

IF 1.8 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-22 DOI: 10.1109/tns.2024.3447772

A. Shilpa, N V L Narasimha Murty

引用次数: 0

Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes SiC JBS 二极管单事件泄漏电流的机理和物理模型

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2024-08-21 DOI: 10.1109/TNS.2024.3446850

Xiaoping Dong;Mingmin Huang;Yao Ma;Chengwen Fu;Mu He;Zhimei Yang;Yun Li;Min Gong

{"title":"Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes","authors":"Xiaoping Dong;Mingmin Huang;Yao Ma;Chengwen Fu;Mu He;Zhimei Yang;Yun Li;Min Gong","doi":"10.1109/TNS.2024.3446850","DOIUrl":"10.1109/TNS.2024.3446850","url":null,"abstract":"The single-event leakage current (SELC) mechanism of the silicon carbide (SiC) junction barrier Schottky (JBS) diode is thoroughly investigated in this work. A comprehensive physical model to quantify the degree of SELC for the JBS diode is also proposed. From the collected experimental results, it is found that the leakage current of the SiC JBS diode increased with the increase in both the reverse bias voltage under irradiation and the total fluence. According to the results of the current response during irradiation and the emission microscope (EMMI) after irradiation, it can be inferred that the leakage current degradation of the samples originated from the accumulation of the Schottky junction’s area with a barrier reduction by the ion-induced local high temperature. Taking the degradation mechanism into account, a novel physical model is developed with the help of TCAD simulations. This model clearly highlights the relationship between the degradation (i.e., Schottky barrier height reduction and amplification of the leakage current) and the irradiation conditions (i.e., reverse bias voltage and fluence). This work provides valuable insights into the underlying origins of the SELC effect and its potential mitigation in SiC JBS diodes.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0