IEEE Transactions on Nuclear Science最新文献_第4页

Experimental Study on Enhanced AlGaN/GaN HEMT Under Different Irradiation Conditions 不同辐照条件下增强型 AlGaN/GaN HEMT 的实验研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-10 DOI: 10.1109/TNS.2025.3549469

Zhi-Yu Xi;Ying Wang;Xin-Xing Fei;Biao Sun;Huo-Lin Huang;Yan-Xing Song;Fei Cao

引用次数: 0

Effects of the Distribution of Secondary-Phase and Deep-Level Defects on the Performance of CdZnTe Nuclear Radiation Detectors 二次相和深能级缺陷分布对CdZnTe核辐射探测器性能的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-07 DOI: 10.1109/TNS.2025.3544566

Wei Dai;Zhao Fu;Xuchen Wang;Zewen Tan;Xiangli Zhong;Jinbin Wang;Linyue Liu;Xiaoping Ouyang

{"title":"Effects of the Distribution of Secondary-Phase and Deep-Level Defects on the Performance of CdZnTe Nuclear Radiation Detectors","authors":"Wei Dai;Zhao Fu;Xuchen Wang;Zewen Tan;Xiangli Zhong;Jinbin Wang;Linyue Liu;Xiaoping Ouyang","doi":"10.1109/TNS.2025.3544566","DOIUrl":"https://doi.org/10.1109/TNS.2025.3544566","url":null,"abstract":"The susceptibility of CdZnTe (CZT) crystals to complex defects during the growth process poses significant challenges in preparing probe-grade CZT single crystals, thereby constraining their extensive application in nuclear radiation detectors. To deeply understand the influence of defects on the performance of CZT crystals, this study systematically investigates the influence of the secondary-phase and related deep-level defect distribution on the photoelectric performance of CZT crystals grown by the vertical gradient freeze (VGF) method. It was found that the crystals with low density of secondary-phase defects and a small defect size have a larger bulk resistivity of <inline-formula> <tex-math>$5.13times 10^{10}~Omega ~cdot $ </tex-math></inline-formula> cm, Hall mobility of 330 cm<inline-formula> <tex-math>${}^{2}~cdot $ </tex-math></inline-formula> V<inline-formula> <tex-math>${}^{-1}~cdot $ </tex-math></inline-formula> s−1, and carrier mobility-lifetime product of <inline-formula> <tex-math>$1.38times 10^{-3}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{2}~cdot $ </tex-math></inline-formula> V−1. The current deep-level transient spectroscopy (I-DLTS) results indicate that secondary-phase defects of large size and high density contribute to an increased capture cross section of deep-level traps and elevated defect concentrations, respectively. During carrier transport, the secondary phase, Tei, and [TeCd]2+-related deep-level defects exhibit prolonged charge de-trapping times, leading to decreasing carrier concentration and incomplete charge collection. Based on the energy band theory, we elucidated the mechanisms underlying the interaction of the defects in CZT crystals. The study provides a foundation for the subsequent realization of effective modulation of defects through the crystal growth process.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1612-1619"},"PeriodicalIF":1.9,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Calibrating p-i-n Diodes for Displacement Damage Monitoring in a Space Radiation Environment 空间辐射环境中用于位移损伤监测的p-i-n二极管校准

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-07 DOI: 10.1109/TNS.2025.3549051

D. J. Bennett;V. A. Pan;J. Vohradsky;L.T. Tran;D. Wagenaar;B. Bergmann;H. Cintas;P. Smolyankiy;R. Sykora;T. Slavicek;Z. Kohout;J. Poder;A. Perevertaylo;I. Anokhin;A. B. Rosenfeld

{"title":"Calibrating p-i-n Diodes for Displacement Damage Monitoring in a Space Radiation Environment","authors":"D. J. Bennett;V. A. Pan;J. Vohradsky;L.T. Tran;D. Wagenaar;B. Bergmann;H. Cintas;P. Smolyankiy;R. Sykora;T. Slavicek;Z. Kohout;J. Poder;A. Perevertaylo;I. Anokhin;A. B. Rosenfeld","doi":"10.1109/TNS.2025.3549051","DOIUrl":"https://doi.org/10.1109/TNS.2025.3549051","url":null,"abstract":"This work investigates the response of specially developed silicon p-i-n diodes with a long base as sensors to measure displacement damage dose (DDD) in silicon. Measurements of DDD are based on the forward voltage shift (<inline-formula> <tex-math>$Delta V_{F}$ </tex-math></inline-formula>) of irradiated p-i-n diodes. In this work, the p-i-n diodes were irradiated in the following radiation fields: 1) 20-MeV electrons from a medical linear accelerator (LINAC); 2) 200-, 150-, and 100-MeV protons at the Groningen proton therapy facility; and 3) 4.63- and 15.3-MeV quasi-monoenergetic neutrons at the Czech Technical University, Prague. It was demonstrated that the calibration factor (<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>), which is the response of the p-i-n diode in terms of DDD obtained using 20-MeV electrons, can be used to predict the p-i-n diode response for protons and neutrons as mentioned above (within experimental error). However, the p-i-n diode response related to 100-MeV protons has a 70% higher response than predicted, which requires further investigation. Overall, the 20-MeV electrons from a medical LINAC were found to be suitable for p-i-n diodes calibration in terms of the non-ionizing energy losses (NIELs) and are widely available in contrast to 1-MeV electrons, fast neutrons, and protons.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1159-1164"},"PeriodicalIF":1.9,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electron Holography Characterization of Total Ionizing Dose Effects in Oxide–Nitride Stacks 氧化氮堆中总电离剂量效应的电子全息表征

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-06 DOI: 10.1109/TNS.2025.3548573

Ching-Tao Chang;Martha R. McCartney;David J. Smith;Keith E. Holbert;Esteban Chacon;Kiraneswar Muthuseenu;Hugh J. Barnaby

引用次数: 0

An Open-Source Monte Carlo Simulator for High-Z Semiconductor Detectors With a Charge Cloud Discretization Method 基于电荷云离散方法的高z半导体探测器的开源蒙特卡罗模拟器

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-06 DOI: 10.1109/TNS.2025.3548909

Jacopo Quercia;Filippo Mele;Iurii A. Eremeev;Giuseppe Bertuccio

{"title":"An Open-Source Monte Carlo Simulator for High-Z Semiconductor Detectors With a Charge Cloud Discretization Method","authors":"Jacopo Quercia;Filippo Mele;Iurii A. Eremeev;Giuseppe Bertuccio","doi":"10.1109/TNS.2025.3548909","DOIUrl":"https://doi.org/10.1109/TNS.2025.3548909","url":null,"abstract":"A Monte Carlo simulator is presented to evaluate the spectroscopic response of high-Z semiconductor pixel radiation detectors starting from the first principles of physical laws. It performs simulation in three different domains: electrostatic fields, photon-matter interaction, and photo-generated charge-carriers transport. A sampling algorithm is proposed to address the issue of fast and accurate computations of charge cloud dynamics in the presence of both diffusion and electrostatic repulsion effects, avoiding direct numerical integration of the induced current equation stated by the Shockley-Ramo theorem under a constant electric field hypothesis. The simulator is written as an object-oriented programming (OOP) source code repository, relying on the integration between MATLAB and COMSOL Multiphysics, and can be run with one executable script. The simulator architecture is presented, followed by a detailed explanation of all the physical models and implemented simulation strategies. The simulator is validated with experimental energy spectra acquired with a radiation detection system based on cadmium zinc telluride (CdZnTe) pixel detectors and ultralow-noise front-end electronics with state-of-the-art energy resolution.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1531-1541"},"PeriodicalIF":1.9,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10915699","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of Radiation-Tolerant Slow-Control Board Based on Atom Switch-Based FPGA 基于原子开关 FPGA 的耐辐射慢速控制板的开发

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-05 DOI: 10.1109/TNS.2025.3548272

Kazuki Ueno;Nanae Taniguchi;Toshitsugu Sakamoto;Makoto Miyamura

{"title":"Development of Radiation-Tolerant Slow-Control Board Based on Atom Switch-Based FPGA","authors":"Kazuki Ueno;Nanae Taniguchi;Toshitsugu Sakamoto;Makoto Miyamura","doi":"10.1109/TNS.2025.3548272","DOIUrl":"https://doi.org/10.1109/TNS.2025.3548272","url":null,"abstract":"The atom switch-based FPGA (AS-FPGA) is a promising candidate for high-radiation environments, such as those encountered in future particle physics experiments using accelerators. To assess its feasibility, we conducted neutron and gamma-ray irradiation tests. No single-event upsets (SEUs) were detected at least up to <inline-formula> <tex-math>$10^{11}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$10^{12}$ </tex-math></inline-formula> n/cm2 with and without applied voltage, respectively. The AS-field-programmable gate array (FPGA) withstood displacement damage dose (DDD) levels at least up to <inline-formula> <tex-math>$10^{14}$ </tex-math></inline-formula> n/cm2 and exhibited no total ionizing dose (TID) effects at least up to 5 and 10 kGy with and without applied voltage, respectively. These results confirm its suitability for high-radiation environments. To facilitate its practical application, we developed an evaluation board to investigate its functions and performance. A prototype slow-control board incorporating a commercial slow-control sensor was constructed. This prototype was used to implement basic logic for temperature data acquisition and tested under neutron irradiation. The slow-control board operated successfully in a high-radiation environment up to <inline-formula> <tex-math>$10^{11}$ </tex-math></inline-formula> n/cm2, demonstrating the potential of the AS-FPGA and the slow-control board for future particle physics experiments.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1525-1530"},"PeriodicalIF":1.9,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Resolution Cr/4H-SiC Schottky Barrier Radiation Detector 高分辨率Cr/4H-SiC肖特基屏障辐射探测器

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-03-04 DOI: 10.1109/TNS.2025.3547998

Ritwik Nag;Sandeep K. Chaudhuri;Frank H. Ruddy;Krishna C. Mandal

{"title":"High-Resolution Cr/4H-SiC Schottky Barrier Radiation Detector","authors":"Ritwik Nag;Sandeep K. Chaudhuri;Frank H. Ruddy;Krishna C. Mandal","doi":"10.1109/TNS.2025.3547998","DOIUrl":"https://doi.org/10.1109/TNS.2025.3547998","url":null,"abstract":"In this article, we present the first comprehensive analysis of radiation detection using chromium (Cr) as the Schottky barrier contact on n-type 4H-silicon carbide (4H-SiC) epitaxial layers tailored for high-performance applications in extreme environments. The Cr/4H-SiC Schottky barrier diode (SBD) is evaluated across several critical metrics, including junction properties, radiation response, and defect characteristics, and is compared with SBDs utilizing other refractory metals such as molybdenum (Mo), palladium (Pd), and nickel (Ni) on analogous 4H-SiC epilayers. Despite the lower work function of Cr, 4.5 eV, compared to the other metals, the Cr/4H-SiC SBDs demonstrated exceptional rectification behavior, achieving a barrier height of 1.13 eV and a low leakage current of 6.7 nA at −100 V reverse bias. These characteristics are ideal for high-resolution radiation detection applications. The Cr/4H-SiC SBD exhibited an impressive energy resolution of 0.5% at an optimized bias of −40 V when exposed to 5486-keV alpha particles. Notably, in self-biased mode (0 V applied bias), the device delivered an energy resolution of 2.3% and a charge collection efficiency (CCE) of 73%, surpassing the performance of benchmark Ni/4H-SiC SBDs. Capacitance-mode deep-level transient spectroscopy (DLTS) analysis revealed the presence of key deep-level defects, including Z<inline-formula> <tex-math>${}_{1/2}$ </tex-math></inline-formula> and EH5 trap centers, and titanium substitutional defects. Among these, the Z<inline-formula> <tex-math>${}_{1/2}$ </tex-math></inline-formula> trap center, widely regarded as a lifetime-killer, was found to play a significant role in influencing the detector’s performance. The findings in this article highlight the untapped potential of Cr/4H-SiC SBDs for high-efficiency, self-biased radiation detection in harsh environments, such as nuclear reactors and space exploration missions.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1644-1651"},"PeriodicalIF":1.9,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Gamma Radiation on TaOₓ ECRAM γ辐射对TaO的影响ₓECRAM

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-28 DOI: 10.1109/TNS.2025.3546663

Hossain Mansur Resalat Faruque;Christopher H. Bennett;Sangheon Oh;Andrew J. Jalbert;Brian Zutter;Max Siath;Jereme Neuendank;Matthew Spear;T. Patrick Xiao;David R. Hughart;Sapan Agarwal;Hugh J. Barnaby;Yiyang Li;A. Alec Talin;Matthew J. Marinella

{"title":"Effect of Gamma Radiation on TaOₓ ECRAM","authors":"Hossain Mansur Resalat Faruque;Christopher H. Bennett;Sangheon Oh;Andrew J. Jalbert;Brian Zutter;Max Siath;Jereme Neuendank;Matthew Spear;T. Patrick Xiao;David R. Hughart;Sapan Agarwal;Hugh J. Barnaby;Yiyang Li;A. Alec Talin;Matthew J. Marinella","doi":"10.1109/TNS.2025.3546663","DOIUrl":"https://doi.org/10.1109/TNS.2025.3546663","url":null,"abstract":"Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. This work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaOx-based ECRAM up to 17.3 Mrad(SiO2) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaOx-based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1292-1302"},"PeriodicalIF":1.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage 基于击前耗尽电容储能的SiC功率器件重离子烧坏物理模型

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-28 DOI: 10.1109/TNS.2025.3546892

Steven L. Kosier;Arijit Sengupta;Dennis R. Ball;John M. Hutson;Andrew L. Sternberg;Sajal Islam;Arthur F. Witulski;Ronald D. Schrimpf;Kenneth F. Galloway;Michael L. Alles;Jason M. Osheroff

{"title":"Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage","authors":"Steven L. Kosier;Arijit Sengupta;Dennis R. Ball;John M. Hutson;Andrew L. Sternberg;Sajal Islam;Arthur F. Witulski;Ronald D. Schrimpf;Kenneth F. Galloway;Michael L. Alles;Jason M. Osheroff","doi":"10.1109/TNS.2025.3546892","DOIUrl":"https://doi.org/10.1109/TNS.2025.3546892","url":null,"abstract":"An analytical model for predicting high-linear energy transfer (LET), normal incidence single-event burnout (SEB) voltage in SiC power devices is presented. The concept of critical energy stored in the drain-body depletion region and released by the passing ion is introduced and used to derive an expression for high-LET, normal incidence (worst case) SEB voltage that depends only on epitaxial layer doping. The model is validated by experimental data ranging from 1200 to 4500 V. The relative independence of high-LET, normal incidence SEB, and epitaxial layer thickness is demonstrated experimentally and is supported by the model. The 900 V SEB voltage devices are experimentally demonstrated. The derating factor for SiC devices as a function of voltage is explained with the model. A lumped RC model is used to gain insights into SEB for both low- and high-LET ions. Low-LET SEB response appears consistent with power-density models and thermal spike effects. High-LET SEB response is qualitatively similar to single-event gate rupture (SEGR), with the depletion capacitance as the energy storage element. Implications for SEB-optimized SiC power devices are described.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1418-1424"},"PeriodicalIF":1.9,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10908362","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Directional Pixelated Gamma-Ray Spectrometer Utilizing Convolutional Neural Network and Simulated Training Data 利用卷积神经网络和模拟训练数据的定向像素化伽马射线光谱仪

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-26 DOI: 10.1109/TNS.2025.3546143

C. M. Lavelle;E. C. Miller;C. Ribaudo;N. Drenkow;C. Sivels;J. Mattson

引用次数: 0