IEEE Transactions on Nuclear Science最新文献

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Measurement of Photons Emitted by High-Energy Charged Particles as Background in Single-Photon Resolving Image Sensors 在单光子分辨图像传感器中测量高能带电粒子作为背景发射的光子
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-15 DOI: 10.1109/TNS.2025.3586965
Guillermo Fernandez Moroni;Fernando Chierchie;Lucas Giardino;Javier Tiffenberg;Juan Estrada
{"title":"Measurement of Photons Emitted by High-Energy Charged Particles as Background in Single-Photon Resolving Image Sensors","authors":"Guillermo Fernandez Moroni;Fernando Chierchie;Lucas Giardino;Javier Tiffenberg;Juan Estrada","doi":"10.1109/TNS.2025.3586965","DOIUrl":"https://doi.org/10.1109/TNS.2025.3586965","url":null,"abstract":"This work introduces an advanced technique optimized for detecting photons generated by charged particles, leveraging Skipper charge coupled device (Skipper-CCD) image sensors. By analyzing background sources and detection efficiencies, the technique achieves strong agreement between experimental results and Cherenkov-based simulations. It also provides a robust framework for investigating secondary photon production in environments with high fluxes of ionizing particles, such as those anticipated in space-based astronomical instruments. These secondary photons present a critical challenge as background noise for next-generation single-photon resolving imagers used to study faint celestial objects. Furthermore, the method exhibits significant potential for broader applications, including exploring photon generation in various substrate materials and examining their transport through multiple interfaces.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2948-2955"},"PeriodicalIF":1.9,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Irradiation Hardening of p-GaN HEMT Based on AlN Polarization Regulation Mechanism 基于AlN极化调节机制的p-GaN HEMT辐照硬化研究
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-15 DOI: 10.1109/TNS.2025.3589385
Wenqi Fan;Jinpeng Qiu;Wei Huang;Jingyu Shen;David Wei Zhang
{"title":"Irradiation Hardening of p-GaN HEMT Based on AlN Polarization Regulation Mechanism","authors":"Wenqi Fan;Jinpeng Qiu;Wei Huang;Jingyu Shen;David Wei Zhang","doi":"10.1109/TNS.2025.3589385","DOIUrl":"https://doi.org/10.1109/TNS.2025.3589385","url":null,"abstract":"In this article, an irradiation-hardened p-GaN high electron mobility transistor (HEMT) based on the AlN polarization effect (A-HEMT) was proposed. First, before irradiation, the AlN polarization effect assists the gate in regulating the channel, enhances the charge sharing in the GaN layer, and suppresses the drain-induced barrier lowering (DIBL) effect. Second, after passivating the gate etched surface with the AlN strain layer, the electron trap density at the AlGaN/GaN interface decreased from <inline-formula> <tex-math>$7.69times 10^{18}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$8.66times 10^{17}$ </tex-math></inline-formula>/(eV<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm2). The hole trap density at the p-GaN/AlGaN interface decreased from <inline-formula> <tex-math>$3.0times 10^{18}$ </tex-math></inline-formula> to <inline-formula> <tex-math>$5.21times 10^{17}$ </tex-math></inline-formula>/(eV<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>cm2), and the trap energy level became shallower from 0.289 to 0.281 eV. As a result of the mitigated gate trap effect, after 300 and 500 krad(Si) <sc>on</small>-state irradiation, the gate Schottky barrier and the ideality factor of A-HEMT were less degraded. Furthermore, the post-irradiation carrier transport model of the A-HEMT gate-stack was proposed. Third, the optimized electric field modulated by AlN polarization in the device drift region can effectively shield the charge generated by the on-state irradiation. After a 500 krad(Si) dose, the A-HEMT has a smaller <inline-formula> <tex-math>${V}_{text {th}}$ </tex-math></inline-formula> drift and a smaller <inline-formula> <tex-math>${R}_{text {dson}}$ </tex-math></inline-formula> variation. The channel electric field in the A-HEMT was about 1.6 times lower than that of the conventional HEMT (C-HEMT). The measured capacitance showed that the AlN strain layer can reduce the traps induced by <sc>on</small>-state irradiation in the active region of the device. Therefore, the AlN strain layer is a feasible irradiation hardening method.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2900-2909"},"PeriodicalIF":1.9,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability of FINN-Generated CNN Accelerators for Image Classification on SRAM-Based FPGAs Under Heavy-Ion-Induced Faults 重离子故障下基于sram的fpga图像分类中finn生成CNN加速器的可靠性研究
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-14 DOI: 10.1109/TNS.2025.3588691
Fabio Benevenuti;Arthur F. Ely;Nilberto H. Medina;Nemitala Added;Vitor Ângelo P. Aguiar;Eduardo L. A. Macchione;Saulo G. Alberton;Greiciane J. Cesário;Matheus S. Pereira;Marcilei A. Guazzelli;Antonio Carlos S. Beck;José Rodrigo Azambuja;Fernanda L. Kastensmidt
{"title":"Reliability of FINN-Generated CNN Accelerators for Image Classification on SRAM-Based FPGAs Under Heavy-Ion-Induced Faults","authors":"Fabio Benevenuti;Arthur F. Ely;Nilberto H. Medina;Nemitala Added;Vitor Ângelo P. Aguiar;Eduardo L. A. Macchione;Saulo G. Alberton;Greiciane J. Cesário;Matheus S. Pereira;Marcilei A. Guazzelli;Antonio Carlos S. Beck;José Rodrigo Azambuja;Fernanda L. Kastensmidt","doi":"10.1109/TNS.2025.3588691","DOIUrl":"https://doi.org/10.1109/TNS.2025.3588691","url":null,"abstract":"This study examines the performance of two convolutional neural networks (CNNs) designed for aerial image classification in the presence of radiation-induced bit-flips. We modify these CNNs by adjusting parameters such as quantization and parallelism to facilitate their implementation using the FINN inference engine, which is optimized for the AMD/Xilinx field programmable gate arrays (FPGAs). The aim is to evaluate the impact of different quantization levels, network topologies, and architectural parallelism on area, computational performance, and reliability in the presence of soft-errors. Emulated fault injection and heavy ion irradiation were performed. The results indicate that the same CNN topology can exhibit up to a <inline-formula> <tex-math>$2.7times $ </tex-math></inline-formula> difference in mean fluence to failure (M<inline-formula> <tex-math>$Phi $ </tex-math></inline-formula> TF) by altering quantization and architectural parallelism. The findings demonstrate that higher dependability can be obtained by carefully combining a suitable CNN topology with optimized quantization and architectural parallelism.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2830-2838"},"PeriodicalIF":1.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IvmeRad: An Active Personal Wearable Ionizing Radiation Dosimeter and Results From a Human Suborbital Space Flight 一种主动个人可穿戴电离辐射剂量计和人类亚轨道太空飞行的结果
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-14 DOI: 10.1109/TNS.2025.3588686
Selcen Uzun Duran;Gupse Aksöz;Egecan Karadöller;Ümit Alver;Tuva C. Atasever;Ömer Ataş;M. Bilge Demirköz
{"title":"IvmeRad: An Active Personal Wearable Ionizing Radiation Dosimeter and Results From a Human Suborbital Space Flight","authors":"Selcen Uzun Duran;Gupse Aksöz;Egecan Karadöller;Ümit Alver;Tuva C. Atasever;Ömer Ataş;M. Bilge Demirköz","doi":"10.1109/TNS.2025.3588686","DOIUrl":"https://doi.org/10.1109/TNS.2025.3588686","url":null,"abstract":"IvmeRad is an active personal wearable radiation dosimeter. IvmeRad-S is a modified version of the device that was carried by a Turkish astronaut on a suborbital space flight up to an altitude of 87,548 km on June 8, 2024, with Virgin Galactic. During the flight, which lasted 70 min, radiation exposure of the astronaut was measured and analyzed. In this study, the design and calibration of the Geiger–Müller detector alongside the performance of the integrated device are investigated, and data are presented and compared to Civil Aeromedical Research Institute 7A (CARI-7A), Model for Atmospheric Ionizing Radiation Effect (MAIRE), and QinetiQ Atmospheric Radiation Model (QARM) calculation codes. A comparison of different calculation codes shows different H*(10) ambient equivalent dose rate behavior above 20 km. These differences could be attributed to the high radiation weighting factor of heavy ions and modeling differences of incident ionizing particles. Also, dependencies on detector characteristics and calibration are discussed to compare calculations with measured dose rates.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2542-2547"},"PeriodicalIF":1.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Statistical Tools for Designing Tests of Mitigated Memories 设计缓和记忆测试的统计工具
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-10 DOI: 10.1109/TNS.2025.3581738
Heather Quinn;Andrew Pineda;Gary Swift
{"title":"Statistical Tools for Designing Tests of Mitigated Memories","authors":"Heather Quinn;Andrew Pineda;Gary Swift","doi":"10.1109/TNS.2025.3581738","DOIUrl":"https://doi.org/10.1109/TNS.2025.3581738","url":null,"abstract":"Electronics in harsh radiation environments require protection from radiation-induced events that alter memory and processing values. While mitigation methods exist, they are stymied by accumulating events, rendering the mitigation useless. Furthermore, accurately measuring the error rate of mitigation methods to predict deployed mitigation error rates can be challenging. This article introduces test design methodologies for radiation testing the effectiveness of mitigation techniques in components. These test designs address the limitations of previous approaches by considering realistic scenarios, including the occurrence of multiple events from a single particle strike. Furthermore, the proposed test designs offer solutions for situations where measuring the mitigation errors is difficult. These test design methodologies can help experimenters to determine if the mitigation strategy provides adequate protection for the deployed system and identifies potential vulnerabilities.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2808-2820"},"PeriodicalIF":1.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy-Ion Testing on Power MOSFETs at Gate Switching Mode for COTS Up-Screening 栅极开关模式下功率mosfet的重离子测试
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-10 DOI: 10.1109/TNS.2025.3588070
Dongwoo Bae;Woojun Lee;Jangkwon Lim;Heikki Kettunen;Woongki Kim;Hyun-Jin Lee;Seungmok Lee;Seungjoo Woo;Changhee Cho;Joongsik Kih;Kiseog Kim;Sang-Soon Yong;Youngboo Kim
{"title":"Heavy-Ion Testing on Power MOSFETs at Gate Switching Mode for COTS Up-Screening","authors":"Dongwoo Bae;Woojun Lee;Jangkwon Lim;Heikki Kettunen;Woongki Kim;Hyun-Jin Lee;Seungmok Lee;Seungjoo Woo;Changhee Cho;Joongsik Kih;Kiseog Kim;Sang-Soon Yong;Youngboo Kim","doi":"10.1109/TNS.2025.3588070","DOIUrl":"https://doi.org/10.1109/TNS.2025.3588070","url":null,"abstract":"In this study, heavy ion tests at the gate switching mode for four kinds of commercial Si power MOSFETs were conducted. The test result shows that for all samples, the gate switching mode was a harsher condition than the conventional dc mode in heavy ion tests. Additionally, the tolerance to heavy ions varied depending on the vendor and did not depend on the breakdown voltage (BV) margin ratio.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2452-2457"},"PeriodicalIF":1.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scintillator-Based SiPM Detector: Improved Performance by Equalization of Pulse Arrival Times 基于闪烁体的SiPM探测器:通过均衡脉冲到达时间来提高性能
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-10 DOI: 10.1109/TNS.2025.3587945
L. Jokhovets;J. van den Boom;S. Furletov;M. Harff;P. Kulessa;M. Ramm;C. Roth;M. Schlösser;M. Streun;G. Wagenknecht;S. van Waasen
{"title":"Scintillator-Based SiPM Detector: Improved Performance by Equalization of Pulse Arrival Times","authors":"L. Jokhovets;J. van den Boom;S. Furletov;M. Harff;P. Kulessa;M. Ramm;C. Roth;M. Schlösser;M. Streun;G. Wagenknecht;S. van Waasen","doi":"10.1109/TNS.2025.3587945","DOIUrl":"https://doi.org/10.1109/TNS.2025.3587945","url":null,"abstract":"A desired temporal accuracy of scintillator-based detectors is less than 100 ps. In medical imaging, this is necessary for successful time-of-flight positron emission tomography (TOF-PET) measurements. In high-energy physics, the calorimeter time resolution must also be on the order of tens of picoseconds. In this work, we describe a way to achieve such a high level of performance for a detector consisting of a monolithic scintillator that distributes light over several cells of an analog silicon photomultiplier (SiPM) array. Each of the cells is read and analyzed separately, applying a waveform sampling (WFS) technique combined with a nonlinear rise approximation (nLRA). Initially, due to a specific spatiotemporal distribution of photons in the scintillator, as well as saturation and recovery effects inherent to SiPMs, the spread of arrival times deduced from signals of different cells can exceed 1 ns for the same array and the same event. To improve the timing performance, we propose a method of equalization of arrival times for predominantly illuminated cells in the same SiPM array. This results in a coincidence time resolution (CTR) below 100 ps full width at half maximum (FWHM) for a pair of identical detectors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2956-2964"},"PeriodicalIF":1.9,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation-Induced Soft Error Assessment of a Multithreaded MobileNet CNN Model Running in a Multicore Edge Processor 在多核边缘处理器上运行的多线程MobileNet CNN模型的辐射诱导软误差评估
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-07-07 DOI: 10.1109/TNS.2025.3585859
Jonas Gava;Areeb Sherjil;Luiz H. Laurini;Emmanuel Atukpor;Rodrigo Possamai Bastos;Fernando Moraes;Ricardo Reis;Luciano Ost
{"title":"Radiation-Induced Soft Error Assessment of a Multithreaded MobileNet CNN Model Running in a Multicore Edge Processor","authors":"Jonas Gava;Areeb Sherjil;Luiz H. Laurini;Emmanuel Atukpor;Rodrigo Possamai Bastos;Fernando Moraes;Ricardo Reis;Luciano Ost","doi":"10.1109/TNS.2025.3585859","DOIUrl":"https://doi.org/10.1109/TNS.2025.3585859","url":null,"abstract":"Convolutional neural networks (CNNs) have become a standard technology in numerous industrial Internet of Things (IoT) applications and sectors, such as automotive and aerospace. Recent advancements in hardware and software (e.g., application programming interface (API)/libraries) components have enabled the efficient execution of multithreaded CNN models on edge devices. As the complexity and adoption of CNNs in safety-critical systems continue to grow, ensuring their resilience becomes key and increasingly challenging. In this context, this work promotes two original contributions: 1) the proposal of a multithreaded implementation of MobileNet, which achieves a <inline-formula> <tex-math>$2.67times $ </tex-math></inline-formula> speedup and an energy reduction of 16% with four worker threads, and 2) the first soft error reliability assessment of a multithreaded CNN model running in a multicore processor under high-energy and thermal neutron radiation flux. Results from the radiation campaigns, with more than 31k runs, suggest that multithreaded executions can increase the occurrence of critical faults by up to <inline-formula> <tex-math>$5times $ </tex-math></inline-formula>. Results also show a greater number of events during the thermal neutron campaign, and some input images are significantly more robust against silent data corruption (SDC) events.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2821-2829"},"PeriodicalIF":1.9,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Use of Different Reactor Physics Models and CADIS Accelerated MCNP to Yield a 1 MeV Silicon Equivalent Flux for Neutron Damage 使用不同的反应堆物理模型和CADIS加速MCNP产生1 MeV硅等效通量中子损伤
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-06-30 DOI: 10.1109/TNS.2025.3582513
Joe A. Johnson;Glenn E. Sjoden;Taylor S. Kimball;Meng-Jen Vince Wang
{"title":"Use of Different Reactor Physics Models and CADIS Accelerated MCNP to Yield a 1 MeV Silicon Equivalent Flux for Neutron Damage","authors":"Joe A. Johnson;Glenn E. Sjoden;Taylor S. Kimball;Meng-Jen Vince Wang","doi":"10.1109/TNS.2025.3582513","DOIUrl":"https://doi.org/10.1109/TNS.2025.3582513","url":null,"abstract":"Here, we develop and explore hybrid simulation techniques to expedite pre-test analysis of experimental designs for radiation hardness assurance testing efforts. Specifically, we focus on neutron displacement damage (NDD) testing, governed by American Society of Testing and Materials (ASTM) Standard Practice E722, which characterizes test facility neutron sources in terms of 1 MeV silicon equivalents. In doing so, we develop and compare a methodology for creating damage metrics for any materials using Evaluated Nuclear Data File (ENDF) libraries. Moreover, simple unit cell models were created and demonstrated to provide reasonable estimates for 1 MeV silicon equivalents flux comparable to the full core model of the training, research, isotopes, general atomics (TRIGA) nuclear reactor at the University of Utah. Criticality eigenvalue calculations in the full core were converted to fixed source problems by aliasing a deterministic solution of the same model. This approach the enabled acceleration of models and the application of consistent adjoint driven importance sampling (CADIS) variance reduction techniques, enabling Monte Carlo computational speedups of 10–100-fold with excellent statistics in the sample target area, paving the way for the application of the UUTR in highly efficient parameter studies for NDD testing.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2910-2918"},"PeriodicalIF":1.9,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystal Growth, Optical, and Scintillation Properties of Eu²+-Doped TlSr₂Br₅ Eu²+掺杂TlSr₂Br₅的晶体生长、光学和闪烁特性
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2025-06-30 DOI: 10.1109/TNS.2025.3584220
Edgar van Loef;Myles Inniss;Jared Schott;Kimberly Pestovich;Luis Stand;Mariya Zhuravleva;Charles Melcher;Lakshmi Soundara Pandian;Jarek Glodo
{"title":"Crystal Growth, Optical, and Scintillation Properties of Eu²+-Doped TlSr₂Br₅","authors":"Edgar van Loef;Myles Inniss;Jared Schott;Kimberly Pestovich;Luis Stand;Mariya Zhuravleva;Charles Melcher;Lakshmi Soundara Pandian;Jarek Glodo","doi":"10.1109/TNS.2025.3584220","DOIUrl":"https://doi.org/10.1109/TNS.2025.3584220","url":null,"abstract":"Crystals of undoped and Eu2+-doped TlSr2Br5 of up to 16 mm in diameter and 50 mm in length were grown by the vertical Bridgman technique. TlSr2Br5 has the monoclinic crystal structure with space group P21/c. Its density and <inline-formula> <tex-math>$Z_{text {eff}}$ </tex-math></inline-formula> are 5.03 g/cm3 and 58.6, respectively. Radioluminescence spectra of undoped and Eu2+-doped TlSr2Br5 feature a broad emission band peaking at about 440 nm for undoped and 520 nm for Eu2+-doped crystals. The light yield of undoped TlSr2Br5 is 42000 ph/MeV, which increases to 55000 ph/MeV for Eu2+-doped crystals. The energy resolution at 662 keV (137Cs) is about 5%–6% full-width at half-maximum (FWHM). The scintillation decay of undoped and Eu2+-doped TlSr2Br5 is on the order of hundreds of nanoseconds.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2965-2970"},"PeriodicalIF":1.9,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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