IEEE Transactions on Nuclear Science最新文献_第5页

Tritiated Perovskites: Experimental Insights for Tritium Betavoltaic Batteries 氚包荧光体：氚型光伏电池的实验启示

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-26 DOI: 10.1109/TNS.2025.3546037

Andrew Maier;Jose Lorie Lopez;Daryl Giglio;Lei Pan;Vasil Hlinka;Anne C. Co;Lei R. Cao

{"title":"Tritiated Perovskites: Experimental Insights for Tritium Betavoltaic Batteries","authors":"Andrew Maier;Jose Lorie Lopez;Daryl Giglio;Lei Pan;Vasil Hlinka;Anne C. Co;Lei R. Cao","doi":"10.1109/TNS.2025.3546037","DOIUrl":"https://doi.org/10.1109/TNS.2025.3546037","url":null,"abstract":"A new approach to developing an intrinsic betavoltaic battery is demonstrated by incorporating radiation-emitting isotopes, such as tritium, directly into the perovskite materials enabling direct power harvesting. The estimated power density for tritiated perovskite is 33.15 mW g-1 compared to 3.25 mW g-1 with conventional planar source-device structure. The long-term energy release is predicted at 73.8 kWh/kg of tritiated methylammonium lead triiodide (tritiated MAPbI3 or CT3NT3PbI3) over 12.32 years. A CT3NT3PbI3 crystal was synthesized using 4.44 mCi of tritiated water. Tritium incorporation into the final perovskite device was confirmed, with an uptake ratio of (<inline-formula> <tex-math>$2.1~pm ~0.2$ </tex-math></inline-formula>)% from tritiated water to methylammonium iodide (MAI) precursor. However, the fabricated devices did not exhibit rectifying behavior, possibly due to the unpolished surface. The I–V curve also exhibited significant hysteresis. A key challenge identified for increasing the tritium uptake ratio is to develop a high concentration of tritiated water.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1637-1643"},"PeriodicalIF":1.9,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10904919","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Effect of Heavy-Ion Single Events on the Accuracy of SONOS Analog In-Memory Computing Accelerators 重离子单事件对SONOS模拟内存计算加速器精度的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-25 DOI: 10.1109/TNS.2025.3543349

Donald Wilson;Ryan C. Dempsey;T. Patrick Xiao;Matthew E. Spear;David R. Hughart;Christopher H. Bennett;Vineet Agrawal;Helmut Puchner;Sapan Agarwal;Matthew J. Marinella

{"title":"The Effect of Heavy-Ion Single Events on the Accuracy of SONOS Analog In-Memory Computing Accelerators","authors":"Donald Wilson;Ryan C. Dempsey;T. Patrick Xiao;Matthew E. Spear;David R. Hughart;Christopher H. Bennett;Vineet Agrawal;Helmut Puchner;Sapan Agarwal;Matthew J. Marinella","doi":"10.1109/TNS.2025.3543349","DOIUrl":"https://doi.org/10.1109/TNS.2025.3543349","url":null,"abstract":"Silicon-oxide-nitride-oxide–silicon (SONOS) charge-trap memory is a promising nonvolatile memory (NVM) device for analog in-memory computing (AIMC) applications. The sensitivity of 40-nm SONOS analog states in response to single-event effects (SEEs) was experimentally assessed by exposing an SONOS array to heavy ions with the linear energy transfers (LETs) of 28.6, 44.9, and 59.5 MeV/(mg/cm2). A statistical model of SEE was developed using specific criteria to distinguish them from effects unrelated to radiation, such as device-to-device programming variation, read noise, and drift. This model was used to simulate the effects of heavy ions on an AIMC accelerator processing standard deep neural networks (DNNs) running inference on common datasets, including ImageNet. Simulated inference accuracy decreases with increasing LET and fluence. At the highest LET of 59.5 MeV/(mg/cm2), an accuracy degradation of 5% on ImageNet was predicted at a fluence of <inline-formula> <tex-math>$3times 10^{6}$ </tex-math></inline-formula> ions/cm2, indicating a sufficient performance for most space applications.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1452-1459"},"PeriodicalIF":1.9,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research and Development of a Commercial Passive Fast Neutron Multiplicity Counting Device for Nuclear Material Accounting 用于核材料核算的商用无源快中子多重计数装置的研究与开发

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-24 DOI: 10.1109/TNS.2025.3544881

Yuezhuang Liu;Shaodong Zhang;Xurun Lin;Zhibo Zhou;Duohong Li;Xingyu Zhou;Mengyuan Li;Baoliang Jin;Lin Ma;Meng Li;Qi Zhang;Da Li;Zhaohui Wu;Xiaodong Zhang

{"title":"Research and Development of a Commercial Passive Fast Neutron Multiplicity Counting Device for Nuclear Material Accounting","authors":"Yuezhuang Liu;Shaodong Zhang;Xurun Lin;Zhibo Zhou;Duohong Li;Xingyu Zhou;Mengyuan Li;Baoliang Jin;Lin Ma;Meng Li;Qi Zhang;Da Li;Zhaohui Wu;Xiaodong Zhang","doi":"10.1109/TNS.2025.3544881","DOIUrl":"https://doi.org/10.1109/TNS.2025.3544881","url":null,"abstract":"A commercial passive fast neutron multiplicity counting (FNMC) device has been developed by our group. The device mainly consists of 32 self-developed EJ-301 liquid scintillation detectors arranged in a spherically symmetrical configuration. These detectors are read out by a 32-channel electronics system equipped with an online field-programmable gate array (FPGA) neutron-gamma discrimination function. In addition, the device integrates a self-designed graphical user interface (GUI), enabling interactive operations such as control and monitoring of the readout electronics and high-voltage power supply. The one-parameter calibration and three-parameter assay methods are used for data analysis to estimate the mass of various 252Cf neutron sources. The results show that the device can accurately measure the mass of 252Cf neutron sources (with an equivalent 240Pueff mass range of 7.84–1929.15 g). Additionally, the three-parameter assay method is used to estimate the 240Pueff mass of four PuO2 samples, and the relative deviations (RDs) between estimated and true 240Pueff mass and relative uncertainties are all less than ±4.5% and 2.75%, respectively.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1631-1636"},"PeriodicalIF":1.9,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature Dependence of the Radiation Response of Ultralow-Loss Optical Fibers: Role of Self-Trapped Holes 超低损耗光纤辐射响应的温度依赖性：自困孔的作用

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-24 DOI: 10.1109/TNS.2025.3544907

Martin Roche;Adriana Morana;Vincenzo De Michele;Cosimo Campanella;Emmanuel Marin;Aziz Boukenter;Youcef Ouerdane;Julien Mekki;Sylvain Girard

引用次数: 0

Proton Radiation Effects on Low-Flux P-on-N Short-Wavelength Infrared HgCdTe Focal Plane Array 质子辐射对低通量P-on-N短波红外HgCdTe焦平面阵列的影响

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-24 DOI: 10.1109/TNS.2025.3544452

Thibaud Friess;Thibault Pichon;Titouan Le Goff;Alexandre Le Roch;Marion Baumann;Léna Provost;Charbel Koumeir;Anne Rouvie;Olivier Boulade;Vincent Goiffon;Serena Rizzolo;Olivier Gravrand

{"title":"Proton Radiation Effects on Low-Flux P-on-N Short-Wavelength Infrared HgCdTe Focal Plane Array","authors":"Thibaud Friess;Thibault Pichon;Titouan Le Goff;Alexandre Le Roch;Marion Baumann;Léna Provost;Charbel Koumeir;Anne Rouvie;Olivier Boulade;Vincent Goiffon;Serena Rizzolo;Olivier Gravrand","doi":"10.1109/TNS.2025.3544452","DOIUrl":"https://doi.org/10.1109/TNS.2025.3544452","url":null,"abstract":"This article investigates the effects of proton radiation on low-flux P-on-N short-wavelength infrared (SWIR) mercury-cadmium-telluride (HgCdTe or MCT) focal plane arrays (FPAs). The study is motivated by the need to investigate and characterize the degradation induced by proton irradiation on such devices. Three steps of irradiation were conducted using 63-MeV protons with a cumulative fluence up to <inline-formula> <tex-math>$4.7 times 10^{11}$ </tex-math></inline-formula> protons/cm2. Dark-signal degradation was observed after irradiation. The degradation evolved linearly up to the final fluence, with the highest dark signal reaching 2.6 e−/s, and annealed completely after a thermal cycle at room temperature. A pixel-to-pixel count of incident protons during an irradiation step also revealed a linear degradation of the dark signal over a large statistic of more than 100 k pixels. A degradation index was estimated using the fluence obtained with the facility dosimeter and the incident proton count method developed in this study. The values obtained are similar using both methods, giving a robust method of calculation of the degradation index following 63-MeV proton irradiations in our sensor technology.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1191-1197"},"PeriodicalIF":1.9,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single-Event Responses of Dual- and Triple-Well Designs at the 5-nm Bulk FinFET Node 双阱和三阱设计在5nm体FinFET节点上的单事件响应

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-24 DOI: 10.1109/TNS.2025.3545001

J. B. Kronenberg;N. J. Pieper;Y. Xiong;C. N. Nuñez Sanchez;D. R. Ball;B. L. Bhuva

引用次数: 0

A Dynamically Reconfigurable Readout Scheme of a Pixel Readout ASIC for Space X-Ray Imaging 用于空间 X 射线成像的像素读出专用集成电路的动态可重构读出方案

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-24 DOI: 10.1109/TNS.2025.3541589

D. Xu;L. Shi;S. Chen;J. Cheng;Y. Dou;M. Abdullah;Z. Miao;Y. Tai;W. Gao

{"title":"A Dynamically Reconfigurable Readout Scheme of a Pixel Readout ASIC for Space X-Ray Imaging","authors":"D. Xu;L. Shi;S. Chen;J. Cheng;Y. Dou;M. Abdullah;Z. Miao;Y. Tai;W. Gao","doi":"10.1109/TNS.2025.3541589","DOIUrl":"https://doi.org/10.1109/TNS.2025.3541589","url":null,"abstract":"A grazing-incidence X-ray telescope is an instrument to observe X-rays emitted by solar activities such as solar flares and coronal mass ejections. A hybrid X-ray imaging detector consisting of a radiation sensor and a readout integrated circuit (ROIC) is required to measure both the energy and counting rate of incident X-ray photons. In this application, the data of interest in the images are concentrated in the region where solar activities occur, and most of the data are irrelevant. Thus, a reconfigurable readout scheme is necessary to obtain a shorter readout time and provide more accurate observational data. In this article, we propose a novel two-step dynamically reconfigurable readout scheme. First, a frame of trigger flag information is read out, and the addresses of the triggered pixels are generated through mode arbitration. Then, the data of interest are read out according to the pixel addresses. The advantage of such a scheme lies in that it can support not only region-of-interest (ROI) readout but also autonomously transitions between full-frame readout and zero-suppression readout modes based on the number of active pixels. To verify this readout method, a <inline-formula> <tex-math>$32times 32$ </tex-math></inline-formula> pixel readout ASIC prototype is designed in a 180-nm CMOS process. The data readout scheme is implemented by the on-chip digital controller and the external logic circuits on a field-programmable gate array (FPGA) board. The ASIC has been tested. At an active pixel rate of 10%, the readout time is reduced by 77.5% compared to the full-frame readout mode. The measured data show that the proposed ASIC achieves dynamic real-time data readout and a frame rate exceeding 190 frames/s at a test clock frequency of 3.125 MHz.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1620-1630"},"PeriodicalIF":1.9,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Radiation Assessment of a 56-Gb/s Electro-Absorption Modulator Driver for Optical Intrasatellite Links 卫星内光链路56 gb /s电吸收调制器驱动的辐射评估

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-19 DOI: 10.1109/TNS.2025.3543637

Kieran De Bruyn;Arijit Karmakar;Warre Geeroms;Michael Vanhoecke;Laurens Bogaert;Günther Roelkens;Alan Naughton;David Mackey;Jeffrey Prinzie;Paul Leroux;Johan Bauwelinck

{"title":"Radiation Assessment of a 56-Gb/s Electro-Absorption Modulator Driver for Optical Intrasatellite Links","authors":"Kieran De Bruyn;Arijit Karmakar;Warre Geeroms;Michael Vanhoecke;Laurens Bogaert;Günther Roelkens;Alan Naughton;David Mackey;Jeffrey Prinzie;Paul Leroux;Johan Bauwelinck","doi":"10.1109/TNS.2025.3543637","DOIUrl":"https://doi.org/10.1109/TNS.2025.3543637","url":null,"abstract":"This article presents a radiation-hardened-by-process 56-Gb/s electro-absorption modulator (EAM) driver designed in a 130-nm silicon germanium (SiGe) bipolar complementary metal oxide semiconductor (BiCMOS) technology for application in optical intrasatellite links. Details of the driver architecture are provided, along with the electrical and optical measurement setups used to evaluate its performance. To assess the vulnerability of the driver against radiation exposure in the space environment, samples were irradiated with X-rays up to a total accumulated dose of 1.2 Mrad(Si), simulating the effects of total ionizing dose (TID) in orbit. Furthermore, heavy-ion experiments corroborated the driver’s resilience to single-event transients (SETs) across a range of linear energy transfers (LETs) from 20 to 65.2 MeV cm2/mg, with a particle fluence of <inline-formula> <tex-math>$1.2times 10^{7}$ </tex-math></inline-formula> cm−2. No single-event latchup (SEL) was observed in the irradiated samples during the heavy-ion exposure.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1228-1236"},"PeriodicalIF":1.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantification and Mechanism Analysis of Total-Ionizing-Dose Effect in Top-Gate CNT FETs 顶栅碳纳米管场效应管中总电离剂量效应的量化及机理分析

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-19 DOI: 10.1109/TNS.2025.3543678

Can Yang;Peng Lu;Dong Zhang;Xiaojing Li;Zhengsheng Han;Bo Li

{"title":"Quantification and Mechanism Analysis of Total-Ionizing-Dose Effect in Top-Gate CNT FETs","authors":"Can Yang;Peng Lu;Dong Zhang;Xiaojing Li;Zhengsheng Han;Bo Li","doi":"10.1109/TNS.2025.3543678","DOIUrl":"https://doi.org/10.1109/TNS.2025.3543678","url":null,"abstract":"The total-ionizing-dose (TID) effect in p-type top-gate carbon nanotube field-effect transistor (CNT FET) under <sc>on, <sc>off, transmission gate (TG), and All-0 bias conditions is investigated through experiments and simulations. The continuous application of electrical stress incites degradation in the device characteristics of CNT FETs, which is further complicated by the superimposition of TID effects. This work distinguished between the electrical stress impact and the TID effect through comparative experiments and analyzed the underlying mechanisms of these two effects with technology computer-aided design (TCAD) simulations. The experimental results demonstrate that both effects on CNT FETs mainly result in a threshold voltage shift. Electrical stress results in a <inline-formula> <tex-math>$Delta V_{text {th}}$ </tex-math></inline-formula> of −0.1 V (<sc>off state) to +0.2 V (<sc>on state), while the TID effect results in a <inline-formula> <tex-math>$Delta V_{mathbf {th}}$ </tex-math></inline-formula> of −0.15 V (TG state) to −0.05 V (<sc>on and <sc>off states). The TG state is recognized as the worst case bias condition of the TID effect on CNT FETs. TCAD simulation results denote that electrical stress incites changes in the trap charge density (<inline-formula> <tex-math>$sim 10^{12}$ </tex-math></inline-formula> cm−2) in the gate dielectric layer, while the TID effect augments positive fixed charges (<inline-formula> <tex-math>$sim 10^{11}$ </tex-math></inline-formula>–<inline-formula> <tex-math>$10^{12}$ </tex-math></inline-formula> cm−2) in the substrate oxide. This study explains the mechanisms of electrical stress and TID effects in CNT FETs, providing a reference for subsequent device process optimization and radiation hardening.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1350-1357"},"PeriodicalIF":1.9,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ionizing Radiation-Induced Data Imprinting Effects in SRAM Arrays 电离辐射诱导的 SRAM 阵列数据印记效应

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-02-18 DOI: 10.1109/TNS.2025.3543233

Umeshwarnath Surendranathan;Abishek S. Vellankanni;Aleksandar Milenkovic;Ujjawal Guin;Biswajit Ray

引用次数: 0