IEEE Transactions on Nuclear Science最新文献_第5页

Integration of Monte Carlo Transport Simulations Into a TCAD Workflow for Electron Detector Developments 蒙特卡罗传输模拟集成到电子探测器开发的TCAD工作流程中

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-30 DOI: 10.1109/TNS.2025.3565813

O. Marcelot;D. Lambert;C. Marcelot

引用次数: 0

SEU Rate Calculation Using In-Flight Proton Detection: Methodologies and Evaluation of Time-Scale Variability 利用飞行中的质子探测计算SEU速率：方法和时间尺度变异性的评估

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-30 DOI: 10.1109/TNS.2025.3565670

Jieyi Wang;Longlong Zhang;Chunqin Wang;Youzhi Li;Guohong Shen;Bin Yuan;Xiaoheng Xu;Tian Yu;Yingqi Ma

{"title":"SEU Rate Calculation Using In-Flight Proton Detection: Methodologies and Evaluation of Time-Scale Variability","authors":"Jieyi Wang;Longlong Zhang;Chunqin Wang;Youzhi Li;Guohong Shen;Bin Yuan;Xiaoheng Xu;Tian Yu;Yingqi Ma","doi":"10.1109/TNS.2025.3565670","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565670","url":null,"abstract":"The real-time single event upset (SEU) rate in low Earth orbit (LEO) is subject to fluctuations influenced by the short-term dynamics of protons in radiation belts and differences in flight trajectories. This study presents three streamlined methodologies for calculating SEU rates using real-time in-flight proton detection rather than relying on models or historical data. Moreover, to evaluate the performance of these methods, data from the National Space Science Center (NSSC) space particle radiation effect comprehensive measuring instrument (SPRECMI) were utilized. This dataset demonstrates that proton contributions predominantly drive the SEUs as established in prior research. The analysis reveals that accuracy and responsiveness exhibit reverse trends across different time scales with a 6-h interval identified as the optimal balance for this SEU monitoring. Furthermore, detailed assessments of methodology performance including error, concordance, and applicability limitations on daily and 6-h scales are provided. This approach to calculating SEU rates supports both the study of space weather impacts on SEUs and the engineering challenges of real-time SEU risk warnings.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1919-1926"},"PeriodicalIF":1.9,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product 低缺陷和高电子迁移寿命产品的CdZnTe晶体

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-29 DOI: 10.1109/TNS.2025.3565234

Song Zhang;Hui Zhang

{"title":"CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product","authors":"Song Zhang;Hui Zhang","doi":"10.1109/TNS.2025.3565234","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565234","url":null,"abstract":"A 3-in CdZnTe ingot with a large single-crystal volume was grown with a self-developed traveling heater method (THM) furnace and process. Observations by infrared (IR) transmission microscopy revealed that Te inclusions within the crystal were maintained below <inline-formula> <tex-math>$5~mu $ </tex-math></inline-formula>m with a quite low density. A <inline-formula> <tex-math>$5times 5times 1.26$ </tex-math></inline-formula> mm planar detector fabricated with CdZnTe crystal exhibited a leakage current of 10.63 nA under a bias voltage of 1000 V, indicating excellent working voltage. The energy resolution of the planar detector reached 5.65% at 241Am@59.5 keV, and its <inline-formula> <tex-math>$mu _{text {e}}tau _{text {e}}$ </tex-math></inline-formula> was calculated to be <inline-formula> <tex-math>$5.90times 10^{-3}$ </tex-math></inline-formula> cm2/V. A <inline-formula> <tex-math>$4times 4$ </tex-math></inline-formula> pixelated detector was also fabricated using a <inline-formula> <tex-math>$5times 5times 1$ </tex-math></inline-formula> mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1969-1972"},"PeriodicalIF":1.9,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Trikarenos: Design and Experimental Characterization of a Fault-Tolerant 28-nm RISC-V-Based SoC Trikarenos：基于risc - v的28纳米容错SoC的设计与实验表征

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-28 DOI: 10.1109/TNS.2025.3564739

Michael Rogenmoser;Philip Wiese;Bruno Endres Forlin;Frank K. Gürkaynak;Paolo Rech;Alessandra Menicucci;Marco Ottavi;Luca Benini

{"title":"Trikarenos: Design and Experimental Characterization of a Fault-Tolerant 28-nm RISC-V-Based SoC","authors":"Michael Rogenmoser;Philip Wiese;Bruno Endres Forlin;Frank K. Gürkaynak;Paolo Rech;Alessandra Menicucci;Marco Ottavi;Luca Benini","doi":"10.1109/TNS.2025.3564739","DOIUrl":"https://doi.org/10.1109/TNS.2025.3564739","url":null,"abstract":"RISC-V-based fault-tolerant system-on-chip (SoC) designs are critical for the new generation of automotive and space SoC architectures. However, reliability assessment requires characterization under controlled radiation doses to accurately quantify the fault tolerance of the fabricated designs. This work analyzes the Trikarenos design, an SoC implemented in TSMC 28 nm, for single event upset (SEU) vulnerability under atmospheric neutron and 200-MeV proton radiation, comparing these results to simulation-based fault injection. All faults in error correction codes (ECCs) protected memory are corrected by a scrubber, showing an estimated cross section per bit of up to <inline-formula> <tex-math>$1.09times 10^{-14}$ </tex-math></inline-formula> cm2bit−1. Furthermore, the triple-core lockstep (TCLS) mechanism implemented in Trikarenos is validated and is shown to correct errors affecting a cross section up to <inline-formula> <tex-math>$3.23times 10^{-11}$ </tex-math></inline-formula> cm2, with the remaining uncorrectable vulnerability below <inline-formula> <tex-math>$5.36times 10^{-12}$ </tex-math></inline-formula> cm2. When augmenting the experimental analysis of fabricated chips with gate-level fault injection in simulation, 99.10% of injections into the SoC produced correct results, while 100% of injections in the TCLS-protected cores were handled correctly. With 12.28% of all injected faults leading to a TCLS recovery, this indicates an approximate effective flip-flop (FF) cross section of up to <inline-formula> <tex-math>$1.28times 10^{-14}$ </tex-math></inline-formula> cm2/FF.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2783-2792"},"PeriodicalIF":1.9,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules 质子辐射对DDR5模块影响的实验研究

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-28 DOI: 10.1109/TNS.2025.3565125

Yang Li;Masakazu Yoshida;Yuibi Gomi;Yifan Deng;Yukinobu Watanabe;Satoshi Adachi;Masatoshi Itoh;Guohe Zhang;Chaohui He;Masanori Hashimoto

{"title":"Experimental Study of Proton-Induced Radiation Effects on DDR5 Modules","authors":"Yang Li;Masakazu Yoshida;Yuibi Gomi;Yifan Deng;Yukinobu Watanabe;Satoshi Adachi;Masatoshi Itoh;Guohe Zhang;Chaohui He;Masanori Hashimoto","doi":"10.1109/TNS.2025.3565125","DOIUrl":"https://doi.org/10.1109/TNS.2025.3565125","url":null,"abstract":"Double data rate 5 synchronous dynamic random access memory (DDR5 SDRAM), as the latest generation in its family, is an outstanding candidate for future space applications, highlighting the importance of considering its radiation performance. In this article, we investigated the proton-induced radiation effects on DDR5 dual-inline-memory-modules (DIMMs) for the first time. Consumer-grade DDR5 modules were tested, taking into account several factors, including proton energy, module vendors, and the specific power management unit (PMU) on DDR5. The results provided the single-event effect (SEE) cross section (CS) curve as a function of proton energy and uncovered the sensitivity of different vendors and the PMU. In addition, comparison tests between server-grade DDR4 and DDR5 modules were conducted to study the impacts of different generations, external error correction code (ECC) cases, and accumulated effects. Fault injection simulations were also conducted to identify potential causes for the observed patterns in the experiments with the existence of on-die ECC.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1907-1918"},"PeriodicalIF":1.9,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-Off-the-Shelf FPGA 商用现成FPGA上的脉冲激光测试评估瞬态剂量率效应

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-25 DOI: 10.1109/TNS.2025.3564367

Yang Li;Zhigang Peng;Yaxin Guo;Ge Tang;Junlin Li;Ruibin Li;Wei Chen;Yao Xiao;Yonghong Li;Mo Li;Chaohui He;Guohe Zhang

{"title":"Pulsed-Laser Testing to Evaluate Transient Dose Rate Effect on a Commercial-Off-the-Shelf FPGA","authors":"Yang Li;Zhigang Peng;Yaxin Guo;Ge Tang;Junlin Li;Ruibin Li;Wei Chen;Yao Xiao;Yonghong Li;Mo Li;Chaohui He;Guohe Zhang","doi":"10.1109/TNS.2025.3564367","DOIUrl":"https://doi.org/10.1109/TNS.2025.3564367","url":null,"abstract":"To overcome the complexity and challenges of transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> irradiation experiments, this article adopted pulsed lasers to simulate the transient dose rate effect (TDRE) on a commercial off-the-shelf (COTS) field-programmable gate array (FPGA), taking advantage of good stability, low interference, high efficiency, and low cost. Three test programs were designed for the Virtex-5 XC5VSX95T FPGA, including one program used in previous transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> irradiation experiments. Laser experiments involved a wide energy range and recorded failure features of the device under test (DUT) and photocurrents on the power supplies. By comparing the results with transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> irradiation experiments, it was demonstrated that pulsed lasers can be used to effectively simulate FPGA’s TDRE, showing consistent effect characteristics. In addition, the sensitivity of the internal clock and logic resources of the FPGA was analyzed, finding that delay-locked loops (DLLs) have a high sensitivity and disturbances in the logic resources could propagate. There are multiple factors affecting the internal sensitivities. Furthermore, like transient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> rays, high-intensity pulsed lasers would also induce dynamic reconfiguration of the FPGA, which was analyzed specifically. These research findings are important supplements to studying FPGA’s TDRE and also demonstrate a significant prospect of using pulsed lasers to simulate the TDRE in very large-scale integrated (VLSI) circuits.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1927-1937"},"PeriodicalIF":1.9,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144314823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamic Voltage-Dependent Modeling of Single Event Transients in CMOS Ring Oscillators CMOS环形振荡器单事件瞬态的动态电压依赖建模

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-25 DOI: 10.1109/TNS.2025.3564513

Venkata Sathyajith Kampati;Stefano Bonaldo;Paul Leroux;Jeffrey Prinzie

引用次数: 0

Optimization of the Fabrication of Luminescent Nanocrystalline CeₓLa1-xF₃:Tb³⁺ for XPDT Applications 用于XPDT应用的发光纳米晶CeₓLa1-xF₃：Tb³⁺的制备优化

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-24 DOI: 10.1109/TNS.2025.3564076

X. Lytvynenko;M. Urbanová;J. Bárta;L. Prouzová Procházková;V. Čuba

{"title":"Optimization of the Fabrication of Luminescent Nanocrystalline CeₓLa1-xF₃:Tb³⁺ for XPDT Applications","authors":"X. Lytvynenko;M. Urbanová;J. Bárta;L. Prouzová Procházková;V. Čuba","doi":"10.1109/TNS.2025.3564076","DOIUrl":"https://doi.org/10.1109/TNS.2025.3564076","url":null,"abstract":"This work presents an investigation into the synthesis, characterization, and luminescence properties of Ce0.5La0.5F3:Tb3+(5%) nanoparticles, synthesized using the sol-gel method with various solvents, including diethylene glycol (DEG), ethylene glycol monomethyl ether (EGME), and polyethylene glycol (PEG). The nanoparticles were subjected to calcination to study the effect of temperature on crystallinity, particle size, and luminescence efficiency. The stability of the nanoparticle suspensions and their potential for biofunctionalization were also evaluated for applications in X-ray induced photodynamic therapy (XPDT). X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses confirmed the size and phase composition of the nanoparticles, with TEM images showing good agreement with dynamic light scattering (DLS) results. Radioluminescence (RL) measurements revealed broad Ce3+ emission bands and characteristic narrow Tb3+ lines and confirmed efficient energy transfer (ET) between Ce3+ and Tb3+ ions. Notably, the sample prepared in EGME and annealed at 250 °C, as well as the sample synthesized in PEG and annealed at 320 °C, demonstrated the best combination of small particle size, enhanced luminescence, and stable suspensions, making them ideal for further biofunctionalization.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 7","pages":"2082-2088"},"PeriodicalIF":1.9,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10976433","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144671283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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In Memoriam 悼念

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555293

Richard T. Wilkins

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In Memoriam 为纪念

IF 1.9 3区工程技术

IEEE Transactions on Nuclear Science Pub Date : 2025-04-21 DOI: 10.1109/TNS.2025.3555295

Harold L. Hughes

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