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IEEE Transactions on Nuclear Science最新文献

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New Developments for the Trigger-Time-Event System for the W7-X Experiment W7-X 试验触发-时间-事件系统的新发展
IF 1.8 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-19 DOI: 10.1109/tns.2024.3445502
J. Schacht, T. Brockmann, M. Marquardt, J. Recknagel, T. Schröder
{"title":"New Developments for the Trigger-Time-Event System for the W7-X Experiment","authors":"J. Schacht, T. Brockmann, M. Marquardt, J. Recknagel, T. Schröder","doi":"10.1109/tns.2024.3445502","DOIUrl":"https://doi.org/10.1109/tns.2024.3445502","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cross-Chip Partial Reconfiguration for the Initialisation of Modular and Scalable Heterogeneous Systems 用于模块化和可扩展异构系统初始化的跨芯片部分重新配置
IF 1.8 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-19 DOI: 10.1109/tns.2024.3446309
Marvin Fuchs, Hendrik Krause, Timo Muscheid, Lukas Scheller, Luis E. Ardila-Perez, Oliver Sander
{"title":"Cross-Chip Partial Reconfiguration for the Initialisation of Modular and Scalable Heterogeneous Systems","authors":"Marvin Fuchs, Hendrik Krause, Timo Muscheid, Lukas Scheller, Luis E. Ardila-Perez, Oliver Sander","doi":"10.1109/tns.2024.3446309","DOIUrl":"https://doi.org/10.1109/tns.2024.3446309","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors 质子辐照对双Δ掺杂 AlGaAs/InGaAs/AlGaAs 伪态高电子迁移率晶体管的影响
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-19 DOI: 10.1109/TNS.2024.3445351
Shuhao Hou;Shangli Dong;Jianqun Yang;Zhongli Liu;Enhao Guan;Jinhua Liu;Gang Lin;Guojian Shao;Yubao Zhang;Jicheng Jiang;Xingji Li
{"title":"Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors","authors":"Shuhao Hou;Shangli Dong;Jianqun Yang;Zhongli Liu;Enhao Guan;Jinhua Liu;Gang Lin;Guojian Shao;Yubao Zhang;Jicheng Jiang;Xingji Li","doi":"10.1109/TNS.2024.3445351","DOIUrl":"10.1109/TNS.2024.3445351","url":null,"abstract":"In this article, we mainly studied the proton irradiation effects on novel dual delta-doping GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The conventional heterojunction high-electron-mobility transistors (HFETs) were selected as control. The insensitivity of Co\u0000<inline-formula> <tex-math>$^{60}~gamma $ </tex-math></inline-formula>\u0000-rays (up to 100 Mrad) indicates that displacement effects predominate in the degradation of threshold voltages (\u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000) and drain current (\u0000<inline-formula> <tex-math>$I_{mathrm {DS}}$ </tex-math></inline-formula>\u0000). Based on the incident depth of protons in device, there are two types of irradiation effects: uniform (thin target) and nonuniform (thick target). For the former, 3-, 40-, and 80-MeV protons were employed to explore the energy dependence in PHEMTs. It was found that the effect of protons on PHEMTs depends on nonionizing energy loss (NIEL), and it is possible to predict the impact of different protons on \u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000 by NIEL alone. As for nonuniform irradiation, the incident range of 150-keV protons in gated and ungated regions of both PHEMTs and HFETs determines the case in which \u0000<inline-formula> <tex-math>$I_{mathrm {DS}}$ </tex-math></inline-formula>\u0000 decreases, while \u0000<inline-formula> <tex-math>$V_{mathrm {TH}}$ </tex-math></inline-formula>\u0000 remains constant as the fluence increases. Finally, this novel PHEMT with a higher donor concentration (provided by double delta doping) and higher mobility (InGaAs channel) was found to have a greater radiation hardness than HFETs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science information for authors 电气和电子工程师学会《核科学学报》为作者提供的信息
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3437929
{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2024.3437929","DOIUrl":"https://doi.org/10.1109/TNS.2024.3437929","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638257","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Memoriam Miguel Angel Aguirre 悼念米格尔-安赫尔-阿吉雷
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3435108
{"title":"In Memoriam Miguel Angel Aguirre","authors":"","doi":"10.1109/TNS.2024.3435108","DOIUrl":"https://doi.org/10.1109/TNS.2024.3435108","url":null,"abstract":"Recounts the career and contributions of Miguel Angel Aguirre.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638260","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science publication information 电气和电子工程师学会《核科学学报》出版物信息
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3437928
{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2024.3437928","DOIUrl":"https://doi.org/10.1109/TNS.2024.3437928","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638259","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference 电气和电子工程师协会核科学研讨会、医学影像会议和室温半导体探测器会议
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3440705
{"title":"IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference","authors":"","doi":"10.1109/TNS.2024.3440705","DOIUrl":"https://doi.org/10.1109/TNS.2024.3440705","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638268","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Transactions on Nuclear Science 2024 Best Paper Award 电气和电子工程师学会《核科学学报》2024 年度最佳论文奖
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3423928
Zane W. Bell
{"title":"IEEE Transactions on Nuclear Science 2024 Best Paper Award","authors":"Zane W. Bell","doi":"10.1109/TNS.2024.3423928","DOIUrl":"https://doi.org/10.1109/TNS.2024.3423928","url":null,"abstract":"The IEEE Transactions on Nuclear Science Best Paper Award is an annual award recognizing the most significant paper published in the TRANSACTIONS in a given year. The award is sponsored by the IEEE Nuclear and Plasma Sciences Society and the winning paper is selected according to its quantifiable usefulness to the community. The authors of papers published in the TRANSACTIONS in the third year prior to the year of the award are eligible for consideration. Thus, the 2024 award is awarded to the paper published in calendar year 2021 judged to be the most useful to our community based on metrics calculated for the years 2021, 2022, and 2023.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638266","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141994003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
List of Reviewers RADECS 2023 Special Issue 审稿人名单 RADECS 2023 特刊
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3435109
{"title":"List of Reviewers RADECS 2023 Special Issue","authors":"","doi":"10.1109/TNS.2024.3435109","DOIUrl":"https://doi.org/10.1109/TNS.2024.3435109","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638258","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141993912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TechRxiv: Share Your Preprint Research with the World! TechRxiv：与世界分享您的预印本研究成果！
IF 1.9 3区 工程技术
IEEE Transactions on Nuclear Science Pub Date : 2024-08-16 DOI: 10.1109/TNS.2024.3440704
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TNS.2024.3440704","DOIUrl":"https://doi.org/10.1109/TNS.2024.3440704","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":null,"pages":null},"PeriodicalIF":1.9,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10638245","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141994014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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