{"title":"Heavy-Ion Testing on Power MOSFETs at Gate Switching Mode for COTS Up-Screening","authors":"Dongwoo Bae;Woojun Lee;Jangkwon Lim;Heikki Kettunen;Woongki Kim;Hyun-Jin Lee;Seungmok Lee;Seungjoo Woo;Changhee Cho;Joongsik Kih;Kiseog Kim;Sang-Soon Yong;Youngboo Kim","doi":"10.1109/TNS.2025.3588070","DOIUrl":null,"url":null,"abstract":"In this study, heavy ion tests at the gate switching mode for four kinds of commercial Si power MOSFETs were conducted. The test result shows that for all samples, the gate switching mode was a harsher condition than the conventional dc mode in heavy ion tests. Additionally, the tolerance to heavy ions varied depending on the vendor and did not depend on the breakdown voltage (BV) margin ratio.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 8","pages":"2452-2457"},"PeriodicalIF":1.9000,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11077455/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, heavy ion tests at the gate switching mode for four kinds of commercial Si power MOSFETs were conducted. The test result shows that for all samples, the gate switching mode was a harsher condition than the conventional dc mode in heavy ion tests. Additionally, the tolerance to heavy ions varied depending on the vendor and did not depend on the breakdown voltage (BV) margin ratio.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.