IEEE Transactions on Nuclear Science最新文献

{"title":"Radiation-Induced Persistent Signal in CdTe Detectors Measured During High-Energy X-Ray Total Scattering Experiments","authors":"F. Orsini;J. Tseng;H. Yamada;Y. Imai;T. Hatsui","doi":"10.1109/TNS.2026.3716612","DOIUrl":"https://doi.org/10.1109/TNS.2026.3716612","url":null,"abstract":"The cadmium telluride (CdTe) photon-counting detectors have become increasingly important for high-energy X-ray applications at synchrotron facilities due to their high quantum efficiency, single-photon sensitivity, and fast frame rates, especially at photon energies beyond the efficient range of silicon-based detectors. Their use is particularly promising for high-energy total scattering and structural studies and is of growing interest in the context of the SPring-8-II upgrade. However, the first total scattering experiment at SPring-8, using a 115-keV beam, revealed an unexpected radiation-induced persistent signal that appears after sample irradiation and evolves on a long timescale. To the best of our knowledge, this effect has not been previously reported in synchrotron applications. Unlike the afterglow commonly observed in indirect flat-panel detectors after illumination ceases, the CdTe detector exhibited a persistent signal even under low-intensity illumination during “air scattering” background measurements, for instance. Following a dedicated protocol and a systematic approach, a series of measurements were performed, and our results showed that the persistent signal became noticeable after about 1 min of irradiation only at a moderate count rate and increased with both exposure time and photon flux, before decaying slowly. Our results demonstrate a dependence of the persistent signal on irradiation conditions and highlight a practical limitation of CdTe detectors for subsequent synchrotron total scattering experiments at high-energy beamlines.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3786-3790"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unsupervised Prior-Guided Implicit Neural Representation for Iterative Reconstruction in Neutron Coded Aperture Imaging","authors":"Xubin Zhang;Mingfei Yan;Lucheng Yang;Jingru Chen;Zhanfei Liu;Wenxuan Zhang;Rui Jia;Huasi Hu","doi":"10.1109/TNS.2026.3723396","DOIUrl":"https://doi.org/10.1109/TNS.2026.3723396","url":null,"abstract":"Fast-neutron coded aperture imaging (NCAI) is a key diagnostic technique for resolving the spatial distribution of fusion hotspots in inertial confinement fusion (ICF) experiments. However, recovering the source distribution from the coded image is an illposed inverse problem. Existing supervised deep-learning methods face practical limitations, including limited labeled data, high transfer costs, and poor out-of-distribution (OOD) generalization. To address these limitations, we propose prior-guided INR (PGINR), a fully unsupervised, prior-guided implicit neural representation (INR) method for iterative reconstruction. PGINR embeds the iteratively updated prior image into the INR representation, enabling source intensity prediction to exploit both spatial coordinate information and image-domain prior information. During iterative reconstruction, the current prior image provides image-domain guidance for INR optimization, while the current INR reconstruction is used to update the prior image for subsequent optimization. In numerical experiments, PGINR consistently outperforms several representative methods on both binary-valued and continuous-valued sources. Further robustness experiments show that PGINR maintains its performance advantage under different Gaussian measurement noise levels and practical alignment deviations. Taken together, the qualitative and quantitative results indicate that PGINR enables high-fidelity reconstruction of hotspot geometry and intensity distribution without relying on paired, labeled training data, making it well-suited for data-scarce ICF neutron imaging diagnostics.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3535-3549"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Total Ionizing Dose Hardening of Embedded Void Silicon-on-Insulator MOSFET by Integrating Back-Gate Modulation","authors":"Tianxiang Zhao;Qiang Liu;Jin Chen;Yuxin Liu;Zhiqiang Mu;Shinan Wang;Zhongying Xue;Wenjie Yu","doi":"10.1109/TNS.2026.3721439","DOIUrl":"https://doi.org/10.1109/TNS.2026.3721439","url":null,"abstract":"Silicon on insulator (SOI) technology is extensively employed in radiation-resistant integrated circuits due to its inherent robustness against single event effects (SEEs). However, charge accumulation in oxide layers under ionizing radiation induces a total ionizing dose (TID) effect, leading to threshold voltage (<inline-formula> <tex-math>$V$ </tex-math></inline-formula>th) drift and increased leakage current. To address this issue fundamentally, this study proposes and fabricates a novel void-embedded silicon-on-insulator (VESOI) planar MOSFET. By locally replacing the buried oxide (BOX) beneath the channel with a vacuum void, the TID-sensitive volume is dramatically reduced. This structural innovation, combined with an H-gate layout and active back gate modulation, results in outstanding radiation hardness. The device exhibits an ultra-low subthreshold swing (<italic>SS</i>) of 62.5 mV/dec before irradiation. After 4 Mrad(Si) irradiation, the <italic>SS</i> variation remains below 1.5 mV/dec, and the switching characteristics show exceptional stability. The back gate voltage effectively compensates for radiation-induced <inline-formula> <tex-math>$V$ </tex-math></inline-formula>th drift. The co-design of structural optimization and electrical compensation presented here offers a promising approach for realizing robust radiation-resistant SOI devices with excellent switching performance.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3609-3617"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Nuclear Science Information for Authors","authors":"","doi":"10.1109/TNS.2026.3730565","DOIUrl":"https://doi.org/10.1109/TNS.2026.3730565","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"C3-C3"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11693475","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization and Recovery of Low-Energy Proton Radiation Displacement Damage in Gallium Nitride Devices","authors":"Ling Lv;Mengqi Liu;Xuefeng Zheng;Yanrong Cao;Jinxin Zhang;Xiaohua Ma","doi":"10.1109/TNS.2026.3723371","DOIUrl":"https://doi.org/10.1109/TNS.2026.3723371","url":null,"abstract":"This study systematically investigates the effects of low-energy proton irradiation (70 and 100 keV) on the performance and reliability of AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs). Low-frequency 1/f noise analysis was employed to quantitatively assess the radiation-induced defect density. Temperature-dependent low-frequency noise measurements revealed a feature at 345–350 K, corresponding to an effective activation energy of approximately <inline-formula> <tex-math>$0.63~pm ~0.05$ </tex-math></inline-formula> eV. Combined with photoluminescence (PL) results, this energy level signature is associated with Ga-related substitutional impurities or vacancy defects. Postirradiation annealing at <inline-formula> <tex-math>$600~^{circ }$ </tex-math></inline-formula>C enables the recovery of up to 75% of the initial transconductance, demonstrating partial annihilation of the radiation-induced defects. These findings provide crucial insights into the proton irradiation damage mechanisms of AlGaN/GaN HEMTs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3591-3599"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-Contact Single Event Effect Detection Method Based on Noise2Self-KNN","authors":"Yifan Du;Xiang Zhu;Yingqi Ma;Jianwei Han;Wanying Zhang","doi":"10.1109/TNS.2026.3708343","DOIUrl":"https://doi.org/10.1109/TNS.2026.3708343","url":null,"abstract":"In radiation environments such as space, single event effects (SEEs) exert a significant impact on the performance and reliability of current commercial off-the-shelf (COTS) integrated circuits (ICs) for aerospace applications. Consequently, the accurate detection of SEEs has become a critical technical requirement in the commercial aerospace field. To address this demand, this article proposes a non-contact SEE detection method based on electromagnetic radiation signals. By performing denoising and fault detection on the faulty electromagnetic signals radiated by a field-programmable gate array (FPGA) in operation, the proposed method achieves 100% SEE identification accuracy with only 100 training samples. Further validation demonstrates that the detection system maintains an identification accuracy of 90.4% when the FPGA is loaded with different operating programs. In summary, the proposed system enables ultrahigh identification accuracy for SEEs in operating FPGAs under the conditions of non-contact measurement and few-shot training, providing an effective technical solution for ensuring circuit reliability in extreme radiation environments such as deep-space exploration.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3670-3678"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Compensation Algorithm Based on Dual-Threshold Differential Peak Detection for Wide-Range Neutron Measurement With Proportional Counters","authors":"Chaoyang Zhu;Peng Tang;Zhentao Wang;Guilai Xing;Litao Li","doi":"10.1109/TNS.2026.3719429","DOIUrl":"https://doi.org/10.1109/TNS.2026.3719429","url":null,"abstract":"Accurate measurement of the neutron flux in the source range of a reactor is crucial for the smooth and successfully starting a reactor. The neutron flux in the source range spans five orders of magnitude. When using proportional counters for measurement, a neutron sensitivity greater than 20 cps/n <inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-2}~cdot $ </tex-math></inline-formula> s⁻¹ is required to minimize errors at low neutron flux levels. However, at high neutron flux levels, pulse pileup occurs, leading to a decrease in measurement accuracy. To ensure accurate neutron measurement in the source range, this article proposes a pulse processing method with dual thresholds and differential peak detection, suitable for wide-range neutron measurement. Different threshold amplitudes are applied for different pulse count rate ranges, and pulse discrimination is performed by searching for pulse peaks using the differential values. Finally, the pulse count rate is corrected to mitigate the effects of pulse pile-up. The applicability of the algorithm was verified through experimental tests; the results show that the pulse processing method can suppress the effects of pulse pile-up in the high-count rate range of <inline-formula> <tex-math>$10^{4}$ </tex-math></inline-formula>–<inline-formula> <tex-math>$5 times 10^{5}$ </tex-math></inline-formula> cps and keep meeting the neutron sensitivity requirement, extending the linear range of the pulse count rate up to <inline-formula> <tex-math>$5 times 10^{5}$ </tex-math></inline-formula> cps and enhancing the accuracy of neutron measurement within the entire source range. Thus, the proposed pulse processing algorithm is suitable for the source range of ex-core neutron measurement and can provide reliable measurement results to ensure reactor start-up.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3723-3731"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Integrative Framework for Real-Time Anomaly Detection in Source Search Using Fuzzy Inference, DDDAS, and Matrix Profile","authors":"Miltiadis Alamaniotis","doi":"10.1109/TNS.2026.3720214","DOIUrl":"https://doi.org/10.1109/TNS.2026.3720214","url":null,"abstract":"Securing metropolitan areas against nuclear threats has been a central objective of nuclear security since 9/11. A key defense strategy is source search, where radiation spectrometers are used to identify anomalies—sources that may pose potential threats—within consecutively acquired spectra. This article presents a novel framework for real-time anomaly detection in gamma spectra collected at short intervals with a mobile detector. The framework integrates three components: dynamic data-driven application systems (DDDASs), matrix profile (MP), and fuzzy inference. This combination enables efficient spectral processing and timely decision-making regarding the presence of anomalies. At its core, DDDAS maintains and continuously updates an MP-based model of background radiation as new spectra are acquired. Anomaly detection is then carried out by a fuzzy inference system that uses four features derived from the stored MP model, the MP itself, and the Kolmogorov–Smirnov (KS) distance of the most recent spectra. Performance is evaluated by introducing source spectra as anomalies at random points in background datasets. Results show that the framework achieves high detection accuracy with very low false alarm rates, while delivering decisions in under one second, making it suitable for real-time applications. Furthermore, comparison with the conventional spectral ratio method based on the KS test and sequential Bayesian detection highlights a substantially lower false alarm rate—about an order of magnitude reduction. Notably, in several test scenarios, the framework yielded zero false alarms per 1000 spectra, underscoring its effectiveness and robustness for nuclear security operations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3699-3714"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature and Gate Bias Induced Recovery Effect for SiC MOSFETs After Total Ionizing Dose Effect","authors":"Zhaoxu Song;Yu Tian;Zheyuan Zhang;Suyu Xu;Xiangrui Fan;Yiren Yu;Jiaxing Wei;Siyang Liu;Weifeng Sun","doi":"10.1109/TNS.2026.3723135","DOIUrl":"https://doi.org/10.1109/TNS.2026.3723135","url":null,"abstract":"In this article, high temperature (HT) and the HT gate bias (HTGBs), including positive bias (PBTS) and negative bias (NBTS), annealing experiments are performed to comprehensively investigate their recovery effects on the electrical characteristics of silicon carbide (SiC) MOSFETs after the total ionizing dose (TID) effect. Based on the electrical characteristics’ results before and after the experiments, both the HT annealing and the PBTS annealing effectively release the holes captured by the oxide traps during the irradiation. They make the threshold voltage shift to the positive direction, mitigating the degradation induced by the irradiation. In particular, the PBTS annealing completely recovers the irradiated device, which results from the combined effects of the holes releasing and electron tunneling. However, the NBTS annealing shows contradictory results at varying irradiation doses, leading to a severe deterioration of the devices exposed to a low-dose irradiation and a significant recovery of the ones subjected to a high-dose irradiation. These phenomena suggest the recovery effect varies with the temperature, the gate bias, and the cumulative dose. The energy band views and the TCAD simulations successfully reveal the underlying mechanism. Finally, the net charge density (<inline-formula> <tex-math>$Delta D_{mathrm {ot}}$ </tex-math></inline-formula>) shift calculated from the C_g–V_g curves is used to verify the experimental results, and the recovery efficiency is compared. Such experiments provide good guidance for the annealing response of SiC MOSFETs under the TID effect.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3645-3652"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Neutron-Induced Traps on the Static and Dynamic Performance of SiC MOSFET","authors":"Hao Li;Jing Qiao;Heyi Li;Binghuang Duan;Jiaming Zhou;Kelun Zhao;Sen Lin;Jianwei Zhang;Fanzhou Zeng;Chaoming Liu","doi":"10.1109/TNS.2026.3722533","DOIUrl":"https://doi.org/10.1109/TNS.2026.3722533","url":null,"abstract":"The effects of neutron irradiation on the static and dynamic electrical characteristics of 4H-SiC MOSFETs are investigated. Devices were irradiated with an equivalent 1 MeV neutron fluence of <inline-formula> <tex-math>$2 times 10^{13}$ </tex-math></inline-formula> n/cm². Static characteristics were evaluated using transfer and output characteristics. Dynamic switching and body-diode reverse-recovery characteristics were also evaluated. Gate–source capacitance (<inline-formula> <tex-math>$boldsymbol {C} _{text {gs}}$ </tex-math></inline-formula>) and drain–source capacitance (<inline-formula> <tex-math>$boldsymbol {C} _{text {DS}}$ </tex-math></inline-formula>) measurements, together with charge-pumping (CP) and deep-level transient spectroscopy (DLTS), were employed to analyze the irradiation-induced traps and their impact on device performance. Neutron irradiation degrades the static performance of the devices, characterized by reduced transconductance, increased subthreshold leakage current, and an increased <sc>on</small>-state resistance. <inline-formula> <tex-math>$boldsymbol {C} _{text {gs}}$ </tex-math></inline-formula> and CP results indicate enhanced interface-related traps in the channel region, which weaken gate control. <inline-formula> <tex-math>$boldsymbol {C} _{text {DS}}$ </tex-math></inline-formula> and DLTS analyses reveal the introduction of deep-level traps in the body and drift regions, mainly related to carbon vacancies, leading to reduced carrier concentration and conductivity, and contributing to the increase in <sc>on</small>-state resistance. In addition, neutron-induced traps modify the dynamic characteristics of the devices, including reduced voltage and current ringing with faster damping during switching and a suppressed peak reverse-recovery current of the body diode, while the switching energy loss remains nearly unchanged. Overall, these results show that neutron-induced traps affect both static and dynamic characteristics mainly through enhanced carrier trapping and increased equivalent resistance.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"73 9","pages":"3600-3608"},"PeriodicalIF":2.4,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148974732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}