IEEE Transactions on Nuclear Science最新文献

{"title":"Displacement Damage Correlation of Heavy Ion, Proton, and Electron Irradiation in GaAs MESFETs","authors":"Shuhao Hou;Shangli Dong;Jianqun Yang;Zhongli Liu;Enhao Guan;Gang Lin;Guojian Shao;Yubao Zhang;Jicheng Jiang;Xingji Li","doi":"10.1109/TNS.2025.3543451","DOIUrl":"https://doi.org/10.1109/TNS.2025.3543451","url":null,"abstract":"In this article, we mainly report the radiation response of n-channel depletion-mode gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFETs) under heavy ion, proton, and electron irradiation. The maximum transconductance (<inline-formula> <tex-math>${G} _{text {MAX}}$ </tex-math></inline-formula>) and drain saturation current (<inline-formula> <tex-math>${I} _{text {DSS}}$ </tex-math></inline-formula>), which can reflect the carrier removal and mobility degradation induced by displacement damage, are selected as evaluation indicators, and two kinds of damage factors are derived: <inline-formula> <tex-math>${K} _{G}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${K} _{I}$ </tex-math></inline-formula>. The nonionizing energy loss (NIEL) of different particles deposited in the epitaxial channel layer of GaAs MESFETs is calculated and used to correlate <inline-formula> <tex-math>${K} _{G}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${K} _{I}$ </tex-math></inline-formula>, respectively. The good linear relationship between damage factors and NIEL makes it possible to predict the degradation of <inline-formula> <tex-math>${G} _{text {MAX}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${I} _{text {DSS}}$ </tex-math></inline-formula>. On this basis, two semiempirical damage equations describing GaAs MESFETs displacement damage are derived and verified by 27-MeV F. We also derive the damage coefficient “<inline-formula> <tex-math>$gamma $ </tex-math></inline-formula>” in the more general damage equation, which has a value of <inline-formula> <tex-math>$5.5times 10^{-13}$ </tex-math></inline-formula> g/MeV for <inline-formula> <tex-math>${G} _{text {MAX}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$8.9times 10^{-13}$ </tex-math></inline-formula> g/MeV for <inline-formula> <tex-math>${I} _{text {DSS}}$ </tex-math></inline-formula>. Besides, MESFETs made from other materials may also align with the damage equation. A single irradiation experiment can determine the damage coefficient <inline-formula> <tex-math>$gamma $ </tex-math></inline-formula> values in principle. This work extends the application of the NIEL-based displacement damage dose (DDD) method in GaAs MESFETs.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"858-865"},"PeriodicalIF":1.9,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143638003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Nuclear Science information for authors","authors":"","doi":"10.1109/TNS.2025.3539562","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539562","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"C3-C3"},"PeriodicalIF":1.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10891363","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Nuclear Science publication information","authors":"","doi":"10.1109/TNS.2025.3539561","DOIUrl":"https://doi.org/10.1109/TNS.2025.3539561","url":null,"abstract":"","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 2","pages":"C2-C2"},"PeriodicalIF":1.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10891362","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Study of SEU and TID Effects in 25-GHz LC -VCOs in 22-nm FinFET","authors":"David Dolt;Samuel Palermo","doi":"10.1109/TNS.2025.3543124","DOIUrl":"https://doi.org/10.1109/TNS.2025.3543124","url":null,"abstract":"Voltage-controlled oscillators (VCOs) are a fundamental building block in all frequency synthesis circuits and have a heavy influence on the overall system’s electrical performance. Moreover, when operating in a radiation environment, VCOs have been identified as a dominant source of sensitivity to both single-event upsets (SEUs) and total ionizing dose (TID). Hence, in this work, we present the design and analysis of three LC-VCO topologies in a 22-nm FinFET process with variations in the varactor and LC-tail filter to study circuit-level techniques for implementing high-performance VCOs that are robust to SEU and TID. The three VCOs are integrated on a single die and operate over a 43.9% tuning range from 16 to 25 GHz with a peak FoMT of 187.38 dBc/Hz. Heavy ion SEU testing was performed at the Texas A&M Cyclotron Institute up to a linear energy transfer (LET) of 70 MeV <inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> cm2/mg with a <inline-formula> <tex-math>$5.6times $ </tex-math></inline-formula> reduction in SEU cross section achieved when using the rad-hard varactor configuration and a further <inline-formula> <tex-math>$2times $ </tex-math></inline-formula> reduction in cross section achieved when using an LC-tail filter. The VCOs were also tested for TID effects at the Texas A&M TRIGA reactor to evaluate the frequency and phase noise (PN) degradation up to a total dose of 300 krad(Si).","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1559-1571"},"PeriodicalIF":1.9,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microlens-Enhanced SiPMs","authors":"G. Haefeli;F. Blanc;E. Currás-Rivera;R. Marchevski;F. Ronchetti;O. Schneider;L. Shchutska;C. Trippl;E. Zaffaroni;G. Zunica","doi":"10.1109/TNS.2025.3542597","DOIUrl":"https://doi.org/10.1109/TNS.2025.3542597","url":null,"abstract":"A novel concept to enhance the photodetection efficiency (PDE) of silicon photomultipliers (SiPMs) has been applied, and remarkable positive results can be reported. This concept uses arrays of microlenses to cover every second SiPM pixel in a chequerboard arrangement and aims to deflect the light from the dead region of the pixelized structure toward the active region in the center of the pixel. The PDE is improved up to 24%, external crosstalk is reduced by 40% compared to a flat epoxy layer, and single photon time resolution (SPTR) is improved. This detector development is conducted in the context of the next-generation Large Hadron Collider beauty (LHCb) scintillating fiber tracker (SciFi Tracker) located in a high radiation environment with a total of 700’000 detector channels. The simulation and measurement results are in good agreement and will be discussed in this work.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1594-1601"},"PeriodicalIF":1.9,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"General-Purpose Data Streaming FPGA TDC Synchronized by SerDes-Based Clock Synchronization Technique","authors":"Ryotaro Honda;Masahiro Ikeno;Che-Sheng Lin;Masayoshi Shoji","doi":"10.1109/TNS.2025.3541731","DOIUrl":"https://doi.org/10.1109/TNS.2025.3541731","url":null,"abstract":"This study proposes a clock synchronization protocol using the functionalities of IDELAYE2 and IOSERDESE2 primitives of an AMD Xilinx field-programmable gate array (FPGA) to serve as a general-purpose data-streaming type time-to-digital converter (TDC) for particle and nuclear physics experiments. A clock synchronization protocol called local area common clock protocol (LACCP) was developed as the upper layer protocol of a proprietary link (MIKUMARI), which was defined prior to this work by a community of users from the experimental physics field in Japan. Clock synchronization is realized using a round-trip time measurement with the system clock period and a fine offset time estimation, which corresponds to the clock signal phase difference between the primary and secondary FPGAs. The fine offset measurement is based on information from the IDELAYE2 and ISERDESE2 primitives utilized as the physical layer of the MIKUMARI link. No extra component is used. The LACCP can be implemented in an FPGA using general IO pin pairs for serial transmission and reception. A streaming high-resolution TDC (Str-HRTDC) was developed based on a tapped-delay-line (TDL) built from CARRY4 primitives in the AMD Xilinx Kintex-7 FPGA. It continuously measures the timing with 19.5-ps intrinsic resolution in <inline-formula> <tex-math>$sigma $ </tex-math></inline-formula> and provides unique timestamp information over 2.4 h by introducing the time frame structure defined and synchronized by LACCP. The clock synchronization accuracy and the timing resolution were evaluated by connecting four modules with optical fibers up to 100 m in length. No cable length dependence was confirmed. The obtained synchronization accuracy was approximately 300 ps. The timing resolution between two synchronized modules was 23.1 ps in <inline-formula> <tex-math>$sigma $ </tex-math></inline-formula>.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"614-622"},"PeriodicalIF":1.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of an LC-VCO-Based ADC Architecture With a Tapped-Delay-Line Phase Quantizer","authors":"Chenxi Chen;Jinhong Wang;Xueye Hu;Shubin Liu","doi":"10.1109/TNS.2025.3541683","DOIUrl":"https://doi.org/10.1109/TNS.2025.3541683","url":null,"abstract":"Analog-to-digital converters (ADCs) using a voltage-controlled oscillator (VCO) offer a promising approach to time-domain ADCs. Traditionally, ring-oscillator-based VCOs (RO-VCOs) have been favored for their compact size and explicit phase detection. In contrast, LC resonator-based VCOs (LC-VCOs) provide better phase noise performance, leading to improved timing. However, the LC-VCO approach encounters challenges such as implicit phase detection and linearity suppression. We propose a time-domain architecture for an LC-VCO-based ADC that employs a tapped-delay line (TDL) as a phase quantizer (PQ). This architecture includes a feedback loop designed to stabilize phase quantization through the TDL and to suppress the nonlinearities of the VCO in voltage-to-frequency conversion. The architecture corresponds to a sigma-delta ADC in the voltage domain. We present the analysis and design of the ADC architecture. The architectural concept was proven in a system using discrete components, where a signal-to-noise-and-distortion ratio (SNDR) of 71.3 dB and an effective number of bits (ENOB) of 11.5 bits were achieved for a bandwidth (BW) of 400 kHz, despite existing nonlinearities. These results confirm the feasibility of the LC-VCO-based ADC architecture although better performance can be anticipated with custom integrated circuit (IC) implementations.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1572-1582"},"PeriodicalIF":1.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding the Contributions of Terrestrial Radiation Sources to Error Rates in Quantum Devices","authors":"Gioele Casagranda;Marzio Vallero;Flavio Vella;Paolo Rech","doi":"10.1109/TNS.2025.3537036","DOIUrl":"https://doi.org/10.1109/TNS.2025.3537036","url":null,"abstract":"Quantum computing (QC), despite being a highly promising computational paradigm, suffers from an incredibly high radiation sensitivity. Recent discoveries highlighted that the impact of a particle in the quantum bit (qubit) is tens of thousands of times more likely to induce a fault compared to traditional CMOS devices. Moreover, the deposited charge quickly diffuses in the substrate affecting multiple qubits, inducing faults that can persist for hundreds of seconds. In this article, we aim to better understand the effect of different radiation sources and mechanisms of energy propagation on quantum devices. We present data from the simulation of more than 18 billion particle interactions. Through GEANT4 simulations, we compare the effect of neutrons, alpha particles, muons, and gamma rays in a quantum device. We combine nonequilibrium generation probability with natural flux to identify the most harmful radiation source for qubits. We found that muons are, by far, the more likely cause of faults in qubits. Moreover, through G4CMP simulations, we track the energy propagation in the substrate. We show that even particle hits far from the qubit can lead to energy transmission to the superconductor, also pointing out that this mechanism is 1000 times more likely than a direct energy deposition on the qubit. In addition, we show that the time persistency of secondary particles in the substrate is in the order of <inline-formula> <tex-math>$100~mu $ </tex-math></inline-formula>s. Finally, we look at particle impacts on a four-qubit device to show that with a common layout, multiple-qubit are likely to be corrupted.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1324-1334"},"PeriodicalIF":1.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluating Proton Dose Modeling in Shielded Systems With On-Orbit LED Degradation","authors":"Neal Nickles;Bryan Fodness;Tyler McCracken","doi":"10.1109/TNS.2025.3541450","DOIUrl":"https://doi.org/10.1109/TNS.2025.3541450","url":null,"abstract":"On-orbit output degradation of a light-emitting diode (LED) is used to compare displacement damage dose (DDD) calculation techniques, trapped proton environmental models, and increasing levels of shielding modeling fidelity to make conclusions on the margins inherent in dose modeling for light to heavily shielded systems. Good agreement with on-orbit degradation is found within a subset of the variety of these modeling techniques investigated. The fundamentals of the DDD calculations, both damage factors and their integration limits over varying energy ranges, are found to matter less than consideration of the secondary neutron contribution to the displacement damage in the more common heavily shielded systems uncovered with high-fidelity modeling codes. Historical minimum margins on top of trapped and solar radiation environmental models are confirmed to be outdated in comparison to the more recent use of confidence levels to address risk. Part-to-part and lot-to-lot part degradation variability is observed between the on-orbit data and identical modeling techniques. A quantitative evaluation of these modeling techniques and all the predicted data versus on-orbit data is presented.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 4","pages":"1031-1039"},"PeriodicalIF":1.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Negative Bias Temperature Instability on Single-Event Burnout in n-Channel Power VDMOS Transistors","authors":"Fengkai Liu;Lei Wu;Shuo Liu;Zhijie Zhou;Yadong Wei;Kai Wang;Huimin Geng;Zhongli Liu;Jianqun Yang;Xingji Li","doi":"10.1109/TNS.2025.3541492","DOIUrl":"https://doi.org/10.1109/TNS.2025.3541492","url":null,"abstract":"This article investigates the effects of cumulative damage, specifically negative bias temperature instability (NBTI), on the transient phenomenon known as single-event burnout (SEB) in power vertical diffused metal-oxide–semiconductor field-effect transistors (VDMOSFETs). Tantalum heavy ion irradiation (THII) experiments were conducted on devices subjected to various pretreatments: negative bias temperature stress (NBTS), hydrogen, low temperature, and a combination of hydrogen and NBTS. The results indicate that devices pretreated with NBTS exhibit increased sensitivity to SEB, whereas those subjected to other pretreatment methods demonstrate decreased sensitivity. In addition, the subthreshold mid-gap technique (SMGT) was employed to differentiate between interface traps and oxide charges, with subsequent technology computer-aided design (TCAD) simulations analyzing their impacts on SEB. The findings reveal that NBTS pretreatment primarily reduces the built-in potential (<inline-formula> <tex-math>$varphi _{text {B}}$ </tex-math></inline-formula>) of parasitic bipolar junction transistor (BJT) conduction by generating oxide charges, thereby increasing SEB sensitivity. Conversely, pretreatments with hydrogen and low temperature promote the conversion of oxide charges into interface traps, resulting in decreased SEB sensitivity. Although the change in SEB sensitivity is relatively small, this research reveals a synergistic interaction between NBTI and SEB, which may lead to premature SEB occurrences and reduce the operational lifespan of power VDMOS transistors.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 3","pages":"901-907"},"PeriodicalIF":1.9,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}