Influence of JFET Region on Heavy-Ion-Induced Gate Damage in SiC Power MOSFET

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-03-27 DOI:10.1109/TNS.2025.3555307

Manyi Ji;Na Ren;Yanjun Li;Zhengjia Chen;Hongyi Xu;Kuang Sheng;Xin Wan;Hu Jin;Jun Xu

引用次数: 0

Abstract

Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and simulation. This study verified the strong influence of width and doping concentration of the JFET region of a SiC MOSFET on the sensitivity to heavy-ion-induced gate damage, including LGD and SELC related to gate damage. Failure analysis was conducted to confirm the damage in the gate oxide. Heavy-ion transient technology computer aided design (TCAD) simulations were carried out to confirm the impact of maximum gate oxide electric field during irradiation on gate damage and type of single-event effects (SEEs). This study also provides a feasible way to harden SiC MOSFETs in a radiation environment by reducing the maximum gate oxide electrical field during exposure to heavy ions.

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JFET区域对SiC功率MOSFET中重离子诱导栅损伤的影响

通过实验和仿真研究了碳化硅功率mosfet中重离子诱导的潜在栅极损伤（LGD）和与栅极损伤相关的单事件漏电流（SELC）。本研究验证了SiC MOSFET的JFET区域宽度和掺杂浓度对重离子诱导栅极损伤灵敏度的强烈影响，包括与栅极损伤相关的LGD和SELC。进行了失效分析，确认了栅氧化层的损坏。采用重离子瞬态技术计算机辅助设计（TCAD）模拟验证了辐照过程中栅极氧化物最大电场对栅极损伤和单事件效应类型的影响。该研究还提供了一种可行的方法，通过降低暴露于重离子时的最大栅极氧化物电场，在辐射环境中硬化SiC mosfet。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.