Radiation Effects of 500 MeV Kr+ Ions on NiO/β-Ga₂O₃ Heterojunction Diodes

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-03-23 DOI:10.1109/TNS.2025.3572942

Penghui Zhao;Hao Chen;Leidang Zhou;Teng Ma;Liang Chen;Tao Yang;Zhifeng Lei;Xing Lu;Genshu Zhou;Hui Guo;Xiaoping Ouyang

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引用次数: 0

Abstract

This study investigates the in situ radiation effects on NiO/beta-phase gallium oxide (

$\beta $

-Ga2O3) heterojunction diodes (HJDs) under 500 MeV Kr+ ions’ irradiation, with a fluence of

$1\times 10^{8}$

cm−2 at −200 V. The statistical results show that both the forward conductive and reverse blocking characteristics of the HJDs were degraded after the irradiation of Kr+ ions. Associated with the analysis of current-voltage characteristics and the stopping and range of ions in matter (SRIM) simulation results, the performance degradations were attributed to the vacancies induced by Kr+ ions’ radiation in the

$\beta $

-Ga2O3 material. On the one hand, the Kr+ radiation-induced vacancies reduced the net carrier concentration of the

$\beta $

-Ga2O3 and increased the generation-recombination current, leading to increased specificon-resistance and ideality factor of the irradiated HJDs. On the other hand, an oxygen di-vacancies-related trap, set at

$1.07~\pm ~0.01$

eV below the conduction band, was involved after Kr+ ions’ radiation, which enhanced the Poole-Frenkel (PF) emission process, dominating the higher leakage current of the irradiated HJDs beyond −300 V. These results provide valuable insights into the radiation damage and performance degradation mechanisms in

$\beta $

-Ga2O3-based devices for space applications.

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500mev Kr+离子对NiO/β-Ga₂O₃异质结二极管的辐射效应

本文研究了500 MeV氪离子辐照下NiO/ β相氧化镓（$\ β $ -Ga2O3）异质结二极管（HJDs）的原位辐射效应，在- 200 V下辐照量为$1\ × 10^{8}$ cm−2。统计结果表明，Kr+离子辐照后，HJDs的正向导电和反向阻断特性均有所下降。结合电流-电压特性分析和物质中离子（SRIM）的停止和范围模拟结果，认为性能下降是由于Kr+离子辐射在$\beta $ -Ga2O3材料中引起的空位。一方面，Kr+辐射引起的空位降低了$\beta $ -Ga2O3的净载流子浓度，增加了生成-复合电流，导致辐照HJDs的比电阻和理想因数增加。另一方面，Kr+离子辐照后在导带以下$1.07~\pm ~0.01$ eV处形成氧空位相关陷阱，增强了pole - frenkel （PF）发射过程，主导了辐照后HJDs在−300 V以上的高泄漏电流。这些结果为空间应用中基于$\beta $ - ga2o3的器件的辐射损伤和性能退化机制提供了有价值的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.