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2022 IEEE International Memory Workshop (IMW)最新文献

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At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells 在3D-NAND缩放的极限:25nm Z-Pitch与10nm Word Line Cells
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779303
S. Rachidi, A. Arreghini, D. Verreck, G. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. V. D. Bosch, M. Rosmeulen
{"title":"At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells","authors":"S. Rachidi, A. Arreghini, D. Verreck, G. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. V. D. Bosch, M. Rosmeulen","doi":"10.1109/IMW52921.2022.9779303","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779303","url":null,"abstract":"A 25 nm pitch 3D-NAND gate-all-around macaroni device with 10 nm gate length, is structurally and electrically demonstrated for the first time. The key fabrication process steps enabling the scaled devices are discussed, such as TiN metal fill and Al2O3 deposition inside the memory hole. We show that an appropriate biasing scheme can reduce the detrimental impact of neighbor-induced barrier lowering on both the transistor characteristics and the memory operation, achieving a −4 V VT and STS of 0.3 V/dec and a memory window of 7 V. Reliability is not significantly impacted at scaled pitches. This study provides a basis for fabrication and understanding of future ultra-high bit density 3D-NAND memories.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116789627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance Hf0.5Zr0.5O2基铁电电容器界面氧化层对可靠性性能的影响
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779287
R. Alcala, F. Mehmood, Pramoda Vishnumurthy, T. Mittmann, T. Mikolajick, U. Schroeder
{"title":"Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance","authors":"R. Alcala, F. Mehmood, Pramoda Vishnumurthy, T. Mittmann, T. Mikolajick, U. Schroeder","doi":"10.1109/IMW52921.2022.9779287","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779287","url":null,"abstract":"La<inf>2</inf>O<inf>3</inf>, and Al<inf>2</inf>O<inf>3</inf>, were evaluated in the form of interfacial oxide layers as potential modifications to achieve increased electric field cycling endurance and polarization retention in comparison to the parent stand-alone Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> capacitor structure. Although it was possible to modify the ferroelectric and conductive behavior of the capacitor, the addition of an interfacial oxide layer also introduced parasitic effects which hampered the improvements. This, nevertheless, was material dependent, with La<inf>2</inf>O<inf>3</inf> outperforming Al<inf>2</inf>O<inf>3</inf>.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132862895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents 铁电三维nand中的变异性和干扰源以及与电荷阱等效物的比较
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779245
M. Pešić, A. Padovani, T. Rollo, Bastien Beltrando, J. Strand, Parnika Agrawal, A. Shluger, L. Larcher
{"title":"Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents","authors":"M. Pešić, A. Padovani, T. Rollo, Bastien Beltrando, J. Strand, Parnika Agrawal, A. Shluger, L. Larcher","doi":"10.1109/IMW52921.2022.9779245","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779245","url":null,"abstract":"We investigate physical mechanisms driving the retention and disturb of charge-trap (CT) based and ferroelectric-(FE) based 3D NAND string. Combining a calibrated CT 3D NAND model and calibrated material properties of the FE material (extracted from FE-FinFET), we extrapolate and compare the existing workhorse with the low-power, high-speed contender. We show that: (1) a inherently discretized FE-stabilization combined with the polycrystalline nature of HZO, and interface charge compensation guarantees MLC capability; (2) FE 3D NAND offers higher ON currents that enable further Z-scaling. Furthermore, we develop a retention model and show that independently of the inherited discretization of the storage layer, lateral charge migration (of the parasitically trapped charge that stabilizes polarization) combined with pass voltage (disturb) can cause retention loss of FE 3D NAND. Finally, integration (layer-cut) and material engineering approaches are suggested for mitigation and guaranteeing stable operation of the string.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"43 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116305675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A comprehensive variability study of doped HfO2 FeFET for memory applications 存储器中掺杂HfO2效应场效应晶体管的综合变异性研究
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779294
N. Ronchi, L. Ragnarsson, U. Celano, B. Kaczer, K. Kaczmarek, K. Banerjee, S. Mcmitchell, G. V. D. Bosch, J. V. Houdt
{"title":"A comprehensive variability study of doped HfO2 FeFET for memory applications","authors":"N. Ronchi, L. Ragnarsson, U. Celano, B. Kaczer, K. Kaczmarek, K. Banerjee, S. Mcmitchell, G. V. D. Bosch, J. V. Houdt","doi":"10.1109/IMW52921.2022.9779294","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779294","url":null,"abstract":"We present the results of an extensive analysis of 3 different elements (Si, Gd and Y) used as dopants for HfO2 in ferroelectric FET (FeFET). Firstly, the ferroelectric response of doped HfO2 has been characterized on simple Metal / Ferroelectric / Insulator / Semiconductor (MFIS) capacitors, and the mean domain size of crystallized HfO2 for the 3 dopants has been measured by Piezo Force Microscopy (PFM). Secondly endurance and retention have been tested on FeFETs; the effect of variations in the gate stack to enhance the memory window (MW) has been also evaluated. Thirdly, a thorough study of variability in the pristine state and as function of bipolar cycling have been carried out on the 3 types of FeFETs. A link is drawn between domain size and variability; a certain degree of non-uniformity is shown to be intrinsic to ferroelectric HfO2.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127586374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Reliability of 28nm embedded RRAM for consumer and industrial products 用于消费和工业产品的28nm嵌入式RRAM的可靠性
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779300
Christian Peters, F. Adler, K. Hofmann, J. Otterstedt
{"title":"Reliability of 28nm embedded RRAM for consumer and industrial products","authors":"Christian Peters, F. Adler, K. Hofmann, J. Otterstedt","doi":"10.1109/IMW52921.2022.9779300","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779300","url":null,"abstract":"We discuss high statistic reliability data of embedded RRAM in a 28nm advanced logic foundry process coming from test devices and first products to demonstrate the matureness und usability of the embedded emerging memory for consumer and industrial products. We compare failure modes and counter measures with embedded flash from the previous generations. Overall, 28nm-embedded RRAM is an adequate successor of embedded flash.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121513156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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