N. Ronchi, L. Ragnarsson, U. Celano, B. Kaczer, K. Kaczmarek, K. Banerjee, S. Mcmitchell, G. V. D. Bosch, J. V. Houdt
{"title":"存储器中掺杂HfO2效应场效应晶体管的综合变异性研究","authors":"N. Ronchi, L. Ragnarsson, U. Celano, B. Kaczer, K. Kaczmarek, K. Banerjee, S. Mcmitchell, G. V. D. Bosch, J. V. Houdt","doi":"10.1109/IMW52921.2022.9779294","DOIUrl":null,"url":null,"abstract":"We present the results of an extensive analysis of 3 different elements (Si, Gd and Y) used as dopants for HfO2 in ferroelectric FET (FeFET). Firstly, the ferroelectric response of doped HfO2 has been characterized on simple Metal / Ferroelectric / Insulator / Semiconductor (MFIS) capacitors, and the mean domain size of crystallized HfO2 for the 3 dopants has been measured by Piezo Force Microscopy (PFM). Secondly endurance and retention have been tested on FeFETs; the effect of variations in the gate stack to enhance the memory window (MW) has been also evaluated. Thirdly, a thorough study of variability in the pristine state and as function of bipolar cycling have been carried out on the 3 types of FeFETs. A link is drawn between domain size and variability; a certain degree of non-uniformity is shown to be intrinsic to ferroelectric HfO2.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A comprehensive variability study of doped HfO2 FeFET for memory applications\",\"authors\":\"N. Ronchi, L. Ragnarsson, U. Celano, B. Kaczer, K. Kaczmarek, K. Banerjee, S. Mcmitchell, G. V. D. Bosch, J. V. Houdt\",\"doi\":\"10.1109/IMW52921.2022.9779294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the results of an extensive analysis of 3 different elements (Si, Gd and Y) used as dopants for HfO2 in ferroelectric FET (FeFET). Firstly, the ferroelectric response of doped HfO2 has been characterized on simple Metal / Ferroelectric / Insulator / Semiconductor (MFIS) capacitors, and the mean domain size of crystallized HfO2 for the 3 dopants has been measured by Piezo Force Microscopy (PFM). Secondly endurance and retention have been tested on FeFETs; the effect of variations in the gate stack to enhance the memory window (MW) has been also evaluated. Thirdly, a thorough study of variability in the pristine state and as function of bipolar cycling have been carried out on the 3 types of FeFETs. A link is drawn between domain size and variability; a certain degree of non-uniformity is shown to be intrinsic to ferroelectric HfO2.\",\"PeriodicalId\":132074,\"journal\":{\"name\":\"2022 IEEE International Memory Workshop (IMW)\",\"volume\":\"2014 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW52921.2022.9779294\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW52921.2022.9779294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comprehensive variability study of doped HfO2 FeFET for memory applications
We present the results of an extensive analysis of 3 different elements (Si, Gd and Y) used as dopants for HfO2 in ferroelectric FET (FeFET). Firstly, the ferroelectric response of doped HfO2 has been characterized on simple Metal / Ferroelectric / Insulator / Semiconductor (MFIS) capacitors, and the mean domain size of crystallized HfO2 for the 3 dopants has been measured by Piezo Force Microscopy (PFM). Secondly endurance and retention have been tested on FeFETs; the effect of variations in the gate stack to enhance the memory window (MW) has been also evaluated. Thirdly, a thorough study of variability in the pristine state and as function of bipolar cycling have been carried out on the 3 types of FeFETs. A link is drawn between domain size and variability; a certain degree of non-uniformity is shown to be intrinsic to ferroelectric HfO2.
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