用于消费和工业产品的28nm嵌入式RRAM的可靠性

2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI:10.1109/IMW52921.2022.9779300

Christian Peters, F. Adler, K. Hofmann, J. Otterstedt

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引用次数: 9

摘要

我们讨论了来自测试设备和首批产品的嵌入式RRAM在28nm先进逻辑代工工艺中的高统计可靠性数据，以证明嵌入式新兴存储器在消费和工业产品中的成熟度和可用性。我们比较了前几代嵌入式闪存的失效模式和应对措施。总的来说，28nm嵌入式RRAM是嵌入式闪存的合适继任者。

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Reliability of 28nm embedded RRAM for consumer and industrial products

We discuss high statistic reliability data of embedded RRAM in a 28nm advanced logic foundry process coming from test devices and first products to demonstrate the matureness und usability of the embedded emerging memory for consumer and industrial products. We compare failure modes and counter measures with embedded flash from the previous generations. Overall, 28nm-embedded RRAM is an adequate successor of embedded flash.

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2022 IEEE International Memory Workshop (IMW)

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