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IMW 2022 Summary of Events IMW 2022事件总结
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/imw52921.2022.9779289
{"title":"IMW 2022 Summary of Events","authors":"","doi":"10.1109/imw52921.2022.9779289","DOIUrl":"https://doi.org/10.1109/imw52921.2022.9779289","url":null,"abstract":"","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132659103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
From Emergence to Prevalence: 22FDX® Embedded STT-MRAM 从出现到流行:22FDX®嵌入式STT-MRAM
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779310
Johannes Müller, A. Titova, H. Yoon, T. Merbeth, M. Weisheit, Georg Wolf, S. Bharali, B. Pfefferling, Y. Otani, T. Shapoval, A. Cagliani, F. Vajda, Pedram Sadeghi, Christiana Villas-Boas Grimm, Frank Krause, Ines Altendorf, G. Congedo, R. Binder, J. Metzger, A. Lajn, Markus Langner, Y. You, O. Kallensee, V. B. Naik, K. Yamane, S. Soss
{"title":"From Emergence to Prevalence: 22FDX® Embedded STT-MRAM","authors":"Johannes Müller, A. Titova, H. Yoon, T. Merbeth, M. Weisheit, Georg Wolf, S. Bharali, B. Pfefferling, Y. Otani, T. Shapoval, A. Cagliani, F. Vajda, Pedram Sadeghi, Christiana Villas-Boas Grimm, Frank Krause, Ines Altendorf, G. Congedo, R. Binder, J. Metzger, A. Lajn, Markus Langner, Y. You, O. Kallensee, V. B. Naik, K. Yamane, S. Soss","doi":"10.1109/IMW52921.2022.9779310","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779310","url":null,"abstract":"Embedded STT-MRAM has emerged to high-volume ramp stage. To sustain yield and to guarantee reliable operation of the memory arrays, a solid line of defense strategy is required. The unprecedented complexity of the MTJ, acting as the memory element in this new technology, can be compensated by an equally unprecedented reservoir of versatile characterization methodologies allowing for the prediction of yield and reliability critical properties of the final memory cell. To enhance the turnaround time of tool monitoring and to enable fast film level and patterned MTJ metrology, the transition of classical lab-based methodologies, such as perpendicular magneto-optical Kerr effect, current-in-plane tunneling and ferromagnetic resonance, to full on-chip capability is essential. The complementary use of these magneto-electrical and magneto-optical techniques for drift partitioning as well as their correlation to the final wafer electrical test and reliability are key for establishing a strong line of defense.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132269964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Liquid Memory and the Future of Data Storage 液体存储器和数据存储的未来
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779295
M. Rosmeulen, C. J. L. Rosa, K. Willems, S. Fransen, B.-Y. Shih, D. Verreck, V. Kalangi, F. Yasin, H. Philipsen, Y. Set, N. Ronchi, W. Roy, O. Y. F. Henry, A. Arreghini, G. V. D. Bosch, A. Furnémont
{"title":"Liquid Memory and the Future of Data Storage","authors":"M. Rosmeulen, C. J. L. Rosa, K. Willems, S. Fransen, B.-Y. Shih, D. Verreck, V. Kalangi, F. Yasin, H. Philipsen, Y. Set, N. Ronchi, W. Roy, O. Y. F. Henry, A. Arreghini, G. V. D. Bosch, A. Furnémont","doi":"10.1109/IMW52921.2022.9779295","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779295","url":null,"abstract":"In this paper, we discuss the status and prospects of liquid memory, aiming at ultra-high-density data storage by manipulation of matter dispersed in liquids. We provide a rationale for this disruptive concept and review the state-of-the-art, which currently has a focus on DNA data storage. Also, we propose two new concepts of liquid memories. The first concept that we propose is based on the manipulation of nanoparticles, which we refer to as colloidal memory. The second concept we propose relies on electrochemistry. We refer to it as electrolithic memory and show experimental data to establish a proof of concept.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131658674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement 基于物理的MTJ紧凑模型，用于最先进和新兴的STT-MRAM失效分析和良率提高
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779246
Nishtha S. Gaul, A. Jaiswal, H. Yoon, T. Lee, K. Yamane, J. Versaggi, R. Carter, B. Paul
{"title":"A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement","authors":"Nishtha S. Gaul, A. Jaiswal, H. Yoon, T. Lee, K. Yamane, J. Versaggi, R. Carter, B. Paul","doi":"10.1109/IMW52921.2022.9779246","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779246","url":null,"abstract":"In this paper, a physics based compact model for STT - MRAM is presented which is capable of fast circuit simulation and design space exploration, while enabling the intrinsic device characterization, like transient behavior, effect of thermal noise and Monte-Carlo simulations. The proposed model does not use any technology specific fitting parameters and hence, is fully technology agnostic and scalable. A two-step coupled simulation methodology was developed to account for both the process and initial angle variations, simultaneously. The model has been extensively validated with 22nm FDSOI MRAM hardware data across different PVT corners with less than 4% RMS error. The scalability of the model has further been demonstrated on a state-of-the-art high performance (high speed switching) MTJ stack.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134163001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP 垂直交叉点存储器与单堆栈存储器的结构和器件考虑到超过1x nm 3DXP的CXL存储器
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779247
Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won-Jun Lee, Beomseok Lee, Seungyun Lee, Hyejung Choi, Hyung-Dong Lee, Taehoon Kim, M. Na
{"title":"Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP","authors":"Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won-Jun Lee, Beomseok Lee, Seungyun Lee, Hyejung Choi, Hyung-Dong Lee, Taehoon Kim, M. Na","doi":"10.1109/IMW52921.2022.9779247","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779247","url":null,"abstract":"In this paper, we propose the structure of the 3D vertical cross point memory (3DVXP) having byte-addressability and discuss the possible challenges and requirements from the structural point of view. The necessity of a poly-Si vertical transistor for column selection and the feasibility of current drivability are presented. The structure driven parasitic resistance and capacitance problems on the device performances are discussed, and the resulting trade-off between the operation speed and the cell density is provided. We also demonstrate the advantage and the feasibility of the selectable memory, based on the memory-selector duality, for the application of 3DVXP.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127643953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
IMW 2022 Committees
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/imw52921.2022.9779283
{"title":"IMW 2022 Committees","authors":"","doi":"10.1109/imw52921.2022.9779283","DOIUrl":"https://doi.org/10.1109/imw52921.2022.9779283","url":null,"abstract":"","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116943673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-Memory 3D NAND Flash Hyperdimensional Computing Engine for Energy-Efficient SARS-CoV-2 Genome Sequencing 高效节能SARS-CoV-2基因组测序的内存3D NAND闪存超维计算引擎
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779291
Po-Kai Hsu, Shimeng Yu
{"title":"In-Memory 3D NAND Flash Hyperdimensional Computing Engine for Energy-Efficient SARS-CoV-2 Genome Sequencing","authors":"Po-Kai Hsu, Shimeng Yu","doi":"10.1109/IMW52921.2022.9779291","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779291","url":null,"abstract":"Hyperdimensional computing (HDC) is a promising paradigm for large-scale genome sequencing. In this work, we explore the feasibility of the in-memory HDC on 3D NAND Flash for genome sequencing. We investigate the HDC engine with geographical region classification of SARS-CoV-2 genome sequences. The simulation results indicate the robustness of the classification accuracy despite the 3D NAND Flash non-idealities. The system performance is evaluated and it achieves 1.21× improvement on energy efficiency compared to PCM-based HDC engine. The area efficiency is also improved by 3.79×.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128108678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability 纳秒激光退火对硅掺杂氧化铪薄膜结晶及电容器可靠性的影响
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779281
T. Ali, R. Olivo, S. Kerdilès, D. Lehninger, M. Lederer, D. Sourav, A. Royet, A. Sünbül, A. Prabhu, K. Kühnel, M. Czernohorsky, M. Rudolph, R. Hoffmann, C. Charpin-Nicolle, L. Grenouillet, T. Kämpfe, K. Seidel
{"title":"Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability","authors":"T. Ali, R. Olivo, S. Kerdilès, D. Lehninger, M. Lederer, D. Sourav, A. Royet, A. Sünbül, A. Prabhu, K. Kühnel, M. Czernohorsky, M. Rudolph, R. Hoffmann, C. Charpin-Nicolle, L. Grenouillet, T. Kämpfe, K. Seidel","doi":"10.1109/IMW52921.2022.9779281","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779281","url":null,"abstract":"Study on the effect of nanosecond laser anneal (NLA) induced crystallization of ferroelectric (FE) Si-doped hafnium oxide (HSO) material is reported. The laser energy density (0.3 J/cm2 to 1.3 J/cm2) and pulse count (1.0 to 30) variations are explored as pathways for the HSO based metal-ferroelectric-metal (MFM) capacitors. The increase in energy density shows transition toward ferroelectric film crystallization monitored by the remanent polarization (2Pr) and coercive field (2Ec). The NLA conditions show maximum 2Pr ($sim 24 mumathrm{C}/text{cm}^{2}$) comparable to the values obtained from reference rapid thermal processing (RTP). Reliability dependence in terms of fatigue (107 cycles) of MFMs on NLA versus RTP crystallization anneal is highlighted. The NLA based MFMs shows improved fatigue cycling at high fields for the low energy densities compared to an RTP anneal. The maximum fatigue cycles to breakdown shows a characteristic dependence on the laser energy density and pulse count. Leakage current and dielectric breakdown of NLA based MFMs at the transition of amorphous to crystalline film state is reported. The role of NLA based anneal on ferroelectric film crystallization and MFM stack reliability is reported in reference with conventional RTP based anneal.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121785044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling Environment for Ge-rich GST Phase Change Memory Cells 富ge GST相变存储单元的建模环境
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779290
M. Baldo, L. Laurin, E. Petroni, G. Samanni, M. Allegra, E. Gomiero, D. Ielmini, A. Redaelli
{"title":"Modeling Environment for Ge-rich GST Phase Change Memory Cells","authors":"M. Baldo, L. Laurin, E. Petroni, G. Samanni, M. Allegra, E. Gomiero, D. Ielmini, A. Redaelli","doi":"10.1109/IMW52921.2022.9779290","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779290","url":null,"abstract":"Embedded phase change memory (PCM) show optimized performance and reliability thanks to Ge enrichment of the active GeSbTe material. This work presents the detailed TCAD model for embedded PCMs able to physically reproduce the program operation, crystallization and its impact on reliability and the absence of thermal disturb phenomena. The model shows a good agreement with 28nm technology node structures and a comparison with conventional 225-GST used for stand-alone memory is also proposed.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130706379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Edge Retraining of FeFET LM-GA CiM for Write Variation & Reliability Error Compensation 基于写变化和可靠性误差补偿的ffet LM-GA CiM边缘再训练
2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI: 10.1109/IMW52921.2022.9779255
Shinsei Yoshikiyo, Naoko Misawa, K. Toprasertpong, Shinichi Takagi, C. Matsui, Ken Takeuchi
{"title":"Edge Retraining of FeFET LM-GA CiM for Write Variation & Reliability Error Compensation","authors":"Shinsei Yoshikiyo, Naoko Misawa, K. Toprasertpong, Shinichi Takagi, C. Matsui, Ken Takeuchi","doi":"10.1109/IMW52921.2022.9779255","DOIUrl":"https://doi.org/10.1109/IMW52921.2022.9779255","url":null,"abstract":"This paper proposes an edge retraining method for local multiply and global accumulate (LM-GA) FeFET Computation-in-Memory (CiM) to compensate the accuracy degradation of neural network (NN) by FeFET device errors. The weights of the original NN model, accurately trained in cloud data center, are written into edge FeFET LM-GA CiM and changed by FeFET device errors in the field. By partially retraining the NN model at the edge device, the effect of device errors is reduced. The proposed method can retrain with small data according to the capacity of the edge device. Three types of FeFET errors, write variation, read disturbance, and data retention, are modeled based on actual device measurements for evaluation. From the evaluation, for the three types of FeFET errors, more than 50% of the reduced inference accuracy can be recovered. Furthermore, by adding a few more layers of retraining, the accuracy recovery rate increased by 20-30%. When the data used for retraining are reduced to 1%, the accuracy recovery rate decreases by about only 15%.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125787752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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