Edge Retraining of FeFET LM-GA CiM for Write Variation & Reliability Error Compensation

Shinsei Yoshikiyo, Naoko Misawa, K. Toprasertpong, Shinichi Takagi, C. Matsui, Ken Takeuchi
{"title":"Edge Retraining of FeFET LM-GA CiM for Write Variation & Reliability Error Compensation","authors":"Shinsei Yoshikiyo, Naoko Misawa, K. Toprasertpong, Shinichi Takagi, C. Matsui, Ken Takeuchi","doi":"10.1109/IMW52921.2022.9779255","DOIUrl":null,"url":null,"abstract":"This paper proposes an edge retraining method for local multiply and global accumulate (LM-GA) FeFET Computation-in-Memory (CiM) to compensate the accuracy degradation of neural network (NN) by FeFET device errors. The weights of the original NN model, accurately trained in cloud data center, are written into edge FeFET LM-GA CiM and changed by FeFET device errors in the field. By partially retraining the NN model at the edge device, the effect of device errors is reduced. The proposed method can retrain with small data according to the capacity of the edge device. Three types of FeFET errors, write variation, read disturbance, and data retention, are modeled based on actual device measurements for evaluation. From the evaluation, for the three types of FeFET errors, more than 50% of the reduced inference accuracy can be recovered. Furthermore, by adding a few more layers of retraining, the accuracy recovery rate increased by 20-30%. When the data used for retraining are reduced to 1%, the accuracy recovery rate decreases by about only 15%.","PeriodicalId":132074,"journal":{"name":"2022 IEEE International Memory Workshop (IMW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW52921.2022.9779255","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper proposes an edge retraining method for local multiply and global accumulate (LM-GA) FeFET Computation-in-Memory (CiM) to compensate the accuracy degradation of neural network (NN) by FeFET device errors. The weights of the original NN model, accurately trained in cloud data center, are written into edge FeFET LM-GA CiM and changed by FeFET device errors in the field. By partially retraining the NN model at the edge device, the effect of device errors is reduced. The proposed method can retrain with small data according to the capacity of the edge device. Three types of FeFET errors, write variation, read disturbance, and data retention, are modeled based on actual device measurements for evaluation. From the evaluation, for the three types of FeFET errors, more than 50% of the reduced inference accuracy can be recovered. Furthermore, by adding a few more layers of retraining, the accuracy recovery rate increased by 20-30%. When the data used for retraining are reduced to 1%, the accuracy recovery rate decreases by about only 15%.
基于写变化和可靠性误差补偿的ffet LM-GA CiM边缘再训练
针对FeFET器件误差对神经网络精度的影响,提出了一种局部乘法和全局累积(LM-GA) ffet内存计算(CiM)边缘再训练方法。将在云数据中心精确训练的原始神经网络模型的权值写入边缘FeFET LM-GA CiM中,并根据现场的FeFET器件误差进行改变。通过在边缘设备处对神经网络模型进行部分再训练,减小了设备误差的影响。该方法可以根据边缘设备的容量对小数据进行再训练。三种类型的FeFET误差,写变化,读干扰和数据保留,是基于实际设备测量的评估模型。从评价来看,对于三种类型的FeFET误差,可以恢复50%以上的降低的推理精度。此外,通过增加几层再训练,准确率恢复率提高了20-30%。当用于再训练的数据减少到1%时,准确率恢复率仅下降约15%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信