Modeling Environment for Ge-rich GST Phase Change Memory Cells

Abstract

Embedded phase change memory (PCM) show optimized performance and reliability thanks to Ge enrichment of the active GeSbTe material. This work presents the detailed TCAD model for embedded PCMs able to physically reproduce the program operation, crystallization and its impact on reliability and the absence of thermal disturb phenomena. The model shows a good agreement with 28nm technology node structures and a comparison with conventional 225-GST used for stand-alone memory is also proposed.