富ge GST相变存储单元的建模环境

2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI:10.1109/IMW52921.2022.9779290

M. Baldo, L. Laurin, E. Petroni, G. Samanni, M. Allegra, E. Gomiero, D. Ielmini, A. Redaelli

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引用次数: 1

摘要

嵌入式相变存储器(PCM)由于活性GeSbTe材料的Ge富集而表现出优化的性能和可靠性。这项工作提出了嵌入式pcm的详细TCAD模型，该模型能够物理地再现程序操作，结晶及其对可靠性的影响，并且没有热干扰现象。该模型与28nm技术节点结构非常吻合，并与用于独立存储器的传统225-GST进行了比较。

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Modeling Environment for Ge-rich GST Phase Change Memory Cells

Embedded phase change memory (PCM) show optimized performance and reliability thanks to Ge enrichment of the active GeSbTe material. This work presents the detailed TCAD model for embedded PCMs able to physically reproduce the program operation, crystallization and its impact on reliability and the absence of thermal disturb phenomena. The model shows a good agreement with 28nm technology node structures and a comparison with conventional 225-GST used for stand-alone memory is also proposed.

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2022 IEEE International Memory Workshop (IMW)

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