{"title":"Enhanced Spectrally Selective Terahertz Detection in a Photo-Thermoelectric Graphene Detector With Dual Nano-Grating Gates","authors":"Faramarz Alihosseini;Hesam Zandi","doi":"10.1109/JQE.2024.3462953","DOIUrl":"10.1109/JQE.2024.3462953","url":null,"abstract":"We introduce a high-performance terahertz detector based on the photo-thermoelectric effect (PTE) in graphene. Our study outlines a novel approach to enhance terahertz detection through a photodetector that employs a hybrid structure. This structure combines the localized surface plasmon resonance of dual grating gates with the resonant modes of a Fabry-Perot cavity configuration, facilitating a strong interaction between terahertz light and the active graphene layer, thereby improving light absorption. Our numerical investigation reveals frequency selectivity within the terahertz absorptance spectrum for incident waves with transverse magnetic polarization, leading to near-perfect absorptance of graphene. This substantial absorption creates an amplified thermal gradient across the graphene channel due to localized heat generation from terahertz wave absorption. The detector’s absorption characteristics can be adjusted by altering geometrical parameters and tuning two gate voltages. Furthermore, incorporating dual grating gates to create a pn-junction leads to a non-uniform Seebeck coefficient along the channel, enhancing the generated voltage. At a resonant frequency of 1.6 THz, the detector demonstrates a responsivity of 1.26 V/W and a noise-equivalent power (NEP) of \u0000<inline-formula> <tex-math>$5.2 mathrm {nW}/sqrt {mathrm {Hz}}$ </tex-math></inline-formula>\u0000 at room temperature, under biasing the two grating gates with the low voltages of ±0.2 V.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142255946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mode-Locking and Q-Switching in Holmium Doped Fiber Laser Using Topological Insulator (Sb₂Te₃) as Saturable Absorber","authors":"H. Ahmad;K. Kamaruzzaman;M. Z. Samion","doi":"10.1109/JQE.2024.3456073","DOIUrl":"10.1109/JQE.2024.3456073","url":null,"abstract":"This work demonstrates mode-locking and Q-switching in a holmium-doped fiber laser (HDFL) using topological insulator (TI) antimony telluride (Sb2Te3) as the saturable absorber (SA). The TI was drop-casted on an arc-shaped fiber to generate mode-locked pulses and used in thin-film form to generate Q-switched pulses. The mode-locked pulses obtained were centered at 2081.1 nm with a repetition rate of 13.4 MHz, signal-to-noise ratio of 42 dB, and 1.85 ps pulse width. The Q-switched pulses were generated at the center wavelength of 2086.3 nm within the pump power of 1.55 W until 1.80 W. Within this range, the repetition rate peaked at 50.76 kHz and the pulse width dropped to a minimum value of \u0000<inline-formula> <tex-math>$2.64~mu $ </tex-math></inline-formula>\u0000s. To the best of the author’s knowledge, this is the first work to use a topological insulator in an HDFL to generate both mode-locked and Q-switched pulses.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142191334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuchen Jiang;Miao Hu;Mengmeng Xu;Haozhen Li;Xuefang Zhou;Meihua Bi;Sunqiang Pan;Chong Liu
{"title":"Frequency Modulation Nonlinear Correction and Ranging in FMCW LiDAR","authors":"Yuchen Jiang;Miao Hu;Mengmeng Xu;Haozhen Li;Xuefang Zhou;Meihua Bi;Sunqiang Pan;Chong Liu","doi":"10.1109/JQE.2024.3454604","DOIUrl":"10.1109/JQE.2024.3454604","url":null,"abstract":"The linearity of the laser frequency modulation is a crucial factor that affects the performance of the frequency-modulated continuous wave (FMCW) LiDAR ranging. Nonlinearity can influence ranging resolution and introduce errors. This paper proposes a method for correcting frequency modulation nonlinearity based on waveform preprocessing for the modulation signal of the laser. After correction, the residual nonlinearity (1-r2) of the laser is reduced to \u0000<inline-formula> <tex-math>$1.85times 10^{-4}$ </tex-math></inline-formula>\u0000 for the up-sweeping and \u0000<inline-formula> <tex-math>$8.47times 10^{-4}$ </tex-math></inline-formula>\u0000 for the down-sweeping using the modulation signal with the repetition frequency of 50 kHz. The full-width at half of the maximum (FWHM) of the spectrum decreases by 86% compared to pre-correction, resulting in the ranging error of 0.37% at the distance of 38 cm. With distances of 0.90 m, 1.80 m, 2.89 m, and 4.13 m, respectively, the ranging error stabilizes at 0.2%, and the minimum deflection of distance can reach \u0000<inline-formula> <tex-math>$8~mathrm {mu m}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142191335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thomas B. Simpson;Joseph S. Suelzer;Nicholas G. Usechak
{"title":"Phase Shifts in Gain-Switched Semiconductor Laser Subharmonic Pulse Trains","authors":"Thomas B. Simpson;Joseph S. Suelzer;Nicholas G. Usechak","doi":"10.1109/JQE.2024.3453281","DOIUrl":"10.1109/JQE.2024.3453281","url":null,"abstract":"Gain switching of semiconductor lasers by strong sinusoidal current modulation can generate Period Two (P2) and Period Three (P3) sub-harmonic pulse trains. It is known that these pulse trains can be interrupted by bursting events, for the P2 pulse train predominantly consisting of short segments of relatively weak pulses at the modulation frequency (a P1-like state) before the system returns to the dominant P2 state. Similarly, for systems operating in the P3 state, intermittent switching yields combinations of P1- and P2-like pulses. To better understand these experimental observations, we perform numerical simulations using a standard model coupling the circulating optical field to the carriers of the gain medium and then compare the results with our experimental measurements on a single-mode distributed feedback laser. The simulations show that low optical power events typically precede the interruptions of the dominant sub-harmonic pulse trains. During these events, stochastic sources, such as spontaneous emission noise, which interact with the circulating optical field are found to dominate the deterministic changes to the calculated trajectory. With output in either P2 or P3 dominant pulse trains, we numerically and experimentally demonstrate that the induced phase fluctuations follow the statistics of classical telegraph noise for the P2 state, and a three-state variant for the P3 state.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-12"},"PeriodicalIF":2.2,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142191336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"All-Optical General RS Flip-Flop and Clocked RS Flip-Flop Based on Cascaded PPLN Waveguides","authors":"Jing Shen;Yujuan Feng","doi":"10.1109/JQE.2024.3450371","DOIUrl":"10.1109/JQE.2024.3450371","url":null,"abstract":"By utilizing the principle of optical logic signal processing of periodically poled lithium niobate (PPLN) waveguide, this paper proposes schemes of all-optical general set-reset (RS) flip-flop and clocked RS flip-flop based on cascaded second-order nonlinearities of sum-frequency generation (SFG) and difference-frequency generation (DFG), and the principle is theoretically investigated. The waveforms, eye diagrams, extinction ratio (ER) and full width at half maximum (FWHM) of the light waves are calculated and simulated numerically. The results of static simulation demonstrate that the logic of general and clocked RS flip-flops are achieved well by these schemes; the timing sequential simulation demonstrate that the logic properties of flip-flops with a feedback loop can also be achieved well for timing sequential optical signals.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142191337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kai Guo;Yixuan Zhu;Yu Chen;Kun Li;Shenqiang Zhai;Shuman Liu;Ning Zhuo;Jinchuan Zhang;Lijun Wang;Fengqi Liu;Xiaohua Wang;Zhipeng Wei;Junqi Liu
{"title":"High-Performance Very Long Wave Infrared Quantum Cascade Detector Grown by MOCVD","authors":"Kai Guo;Yixuan Zhu;Yu Chen;Kun Li;Shenqiang Zhai;Shuman Liu;Ning Zhuo;Jinchuan Zhang;Lijun Wang;Fengqi Liu;Xiaohua Wang;Zhipeng Wei;Junqi Liu","doi":"10.1109/JQE.2024.3448399","DOIUrl":"https://doi.org/10.1109/JQE.2024.3448399","url":null,"abstract":"We present a very long wave infrared (VLWIR) quantum cascade detector (QCD) optimized for the extraction region grown by metal organic chemical vapor deposition (MOCVD). The wave function of high-energy states has been tailored into a funnel-shaped miniband structure. This design accelerates the extraction and collection of electrons, thereby enhancing the device’s extraction efficiency, with a theoretical calculation value of 91%. Besides, this miniband extraction scheme also increases the number of well barrier pairs between the ground state and the longitudinal optical (LO) phonon step level. The electron loss caused by thermal backfilling and thermally activated leakage can be effectively reduced. For a \u0000<inline-formula> <tex-math>$200~mu $ </tex-math></inline-formula>\u0000m \u0000<inline-formula> <tex-math>$times 200~mu $ </tex-math></inline-formula>\u0000m mesa device from a 4-inch wafer, a peak responsivity of 66 mA/W and a peak specific detectivity of \u0000<inline-formula> <tex-math>$1.4 times 10^{11}$ </tex-math></inline-formula>\u0000 Jones were obtained at 30 K, with the maximum operating temperature persists up to 170 K.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"1-5"},"PeriodicalIF":2.2,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142169758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tianxiang Wu;Xi Wang;Liqi Zhu;Xun Li;Jian Huang;Zhikai Gan;Yanfeng Wei;Chun Lin
{"title":"Probing the Dark Current of Multi-Layer Heterojunction HgCdTe Long-Wavelength and Very-Long-Wavelength Infrared Photodiodes","authors":"Tianxiang Wu;Xi Wang;Liqi Zhu;Xun Li;Jian Huang;Zhikai Gan;Yanfeng Wei;Chun Lin","doi":"10.1109/JQE.2024.3445293","DOIUrl":"https://doi.org/10.1109/JQE.2024.3445293","url":null,"abstract":"This paper characterizes the dark current development of p-on-n type HgCdTe multi-layer heterojunction long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) photodiodes. Four devices that operate at different wavelengths are fabricated by employing a multi-layer structure. The results demonstrate the favorable dark current which is close to the “Rule 07” limitation is obtained with a 50% cutoff wavelength of \u0000<inline-formula> <tex-math>$16.6~mu $ </tex-math></inline-formula>\u0000m. Besides, the influence mechanisms on the device are extracted by analyzing the temperature-dependent dark current from 40 K to 130 K. The results suggest that the proposed devices perform comparable to those of conventional double-layer heterojunction devices. Furthermore, it can be noted that by precisely controlling the composition distribution and depletion region positions as well as improving the process, we can further achieve superior LWIR and VLWIR devices.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142091054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kenneth Coker;Chuyuan Zheng;Joseph Roger Arhin;Kwame Opuni-Boachie Obour Agyekum;Wei Li Zhang
{"title":"Control of Polaritonic Coupler Using Optical Stark Effect in 2D Hybrid Organic-Inorganic Perovskite Microcavity","authors":"Kenneth Coker;Chuyuan Zheng;Joseph Roger Arhin;Kwame Opuni-Boachie Obour Agyekum;Wei Li Zhang","doi":"10.1109/JQE.2024.3441613","DOIUrl":"https://doi.org/10.1109/JQE.2024.3441613","url":null,"abstract":"This research delves into the innovative application of the optical Stark effect in dynamically guiding polaritons through a Y-shaped potential, forming a polaritonic coupler within a 2D hybrid organic-inorganic perovskite microcavity. The study explores the characteristics of the 2D perovskite, focusing on harnessing the optical Stark-induced energy shift in the polariton branches. The polaritonic coupler, which has a single input and two divergent outputs, is subjected to an external optical Stark pulse, dynamically guiding polaritons between the input and outputs. The research focuses on examining the controllability of the polaritonic coupler through the polariton coupling ratio, highlighting the regulatory role played by the optical Stark effect in this dynamic process. In-depth analyses of the spatial distribution and time evolution of polaritons within the coupler reveal that the optical Stark pulse effectively regulates the polariton coupling ratio, realizing a programmable coupler. This investigation not only advances the fundamental understanding of polariton dynamics within 2D hybrid organic-inorganic perovskite microcavities but also demonstrates the potential for developing optically controlled integrated photonic devices.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
George Sarantoglou;Adonis Bogris;Charis Mesaritakis
{"title":"All-Optical, Reconfigurable, and Power Independent Neural Activation Function by Means of Phase Modulation","authors":"George Sarantoglou;Adonis Bogris;Charis Mesaritakis","doi":"10.1109/JQE.2024.3437353","DOIUrl":"10.1109/JQE.2024.3437353","url":null,"abstract":"In this work, we present numerical results concerning an integrated photonic non-linear activation function that relies on a power independent, non-linear phase to amplitude conversion in a passive optical resonator. The underlying mechanism is universal to all optical filters, whereas here, simulations were based on micro-ring resonators. Investigation revealed that the photonic neural node can be tuned to support a wide variety of continuous activation functions that are relevant to the neural network architectures, such as the sigmoid and the soft-plus functions. The proposed photonic node is numerically evaluated in the context of time delayed reservoir computing (TDRC) scheme, targeting the one-step ahead prediction of the Santa Fe series. The proposed phase to amplitude TDRC is benchmarked versus the conventional amplitude based TDRC, showcasing a performance boost by one order of magnitude.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 5","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141883225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}