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IEEE Journal of Quantum Electronics publication information IEEE量子电子学杂志出版信息
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3501779
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引用次数: 0
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IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-12-05 DOI: 10.1109/JQE.2024.3501833
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引用次数: 0
Extremely Dispersive Fiber With Gradient-High-Index Core and Concentric Ring 具有梯度高折射率芯和同心环的极色散光纤
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-26 DOI: 10.1109/JQE.2024.3506825
Qinru Peng;Wenpu Geng;Wenqian Zhao;Yuanpeng Liu;Zhongqi Pan;Yang Yue
{"title":"Extremely Dispersive Fiber With Gradient-High-Index Core and Concentric Ring","authors":"Qinru Peng;Wenpu Geng;Wenqian Zhao;Yuanpeng Liu;Zhongqi Pan;Yang Yue","doi":"10.1109/JQE.2024.3506825","DOIUrl":"https://doi.org/10.1109/JQE.2024.3506825","url":null,"abstract":"In this work, an extremely dispersive optical fiber, incorporating a gradient-index central core and extra concentric ring structure of high-index material, is proposed and tailored specifically for the HE1,1 mode. The impacts of geometrical parameters and doping concentration are explored for the corresponding dispersion characteristics. By systematically adjusting diverse fiber parameters, it becomes evident that alterations in the curve slope discrepancies between the effective index of the central core and the outer ring directly influence both the optical dispersion peak and bandwidth. Consequently, the optical dispersion characteristics of the designed fiber can be customized to meet specific requirements by adjusting both fiber geometry and doping concentration of germanium dioxide. Further refinement of the fiber’s geometric parameters results in achieving a negative chromatic dispersion value of -203,898 ps/(nm\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000 km) at 1547.9 nm. Moreover, the peak dispersion magnitude in our gradient-index fiber design significantly surpasses that of the step-index fiber.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intrinsic Modulation Characteristics of Hybrid Modulation Laser Diode With Phase Control Waveguide 相位控制波导混合调制激光二极管的本征调制特性
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-25 DOI: 10.1109/JQE.2024.3506392
Hiroshi Yasaka;Nobuhide Yokota;Takahiko Shindo;Wataru Kobayashi
{"title":"Intrinsic Modulation Characteristics of Hybrid Modulation Laser Diode With Phase Control Waveguide","authors":"Hiroshi Yasaka;Nobuhide Yokota;Takahiko Shindo;Wataru Kobayashi","doi":"10.1109/JQE.2024.3506392","DOIUrl":"https://doi.org/10.1109/JQE.2024.3506392","url":null,"abstract":"A hybrid modulation laser diode integrated with a phase control section between the distributed feedback active section and intra-cavity loss modulation section (PC-HMLD) is proposed. The phase control section enables to control the phase of the light fed back from the intra-cavity loss-modulation section to the distributed feedback active section properly. It was confirmed numerically that the PC-HMLD had a wide intrinsic modulation bandwidth of more than 500 GHz and showed an eye opening for high-speed signals up to 500 Gbit/s. The load resistance dependence of the PC-HMLD’s modulation characteristics were also numerically examined. It was confirmed that eye opening can be expected for up to 500 Gbit/s if the load resistance is reduced to less than \u0000<inline-formula> <tex-math>$10Omega $ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-8"},"PeriodicalIF":2.2,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes 4H-SiC雪崩光电二极管的快速自由运行电路
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-18 DOI: 10.1109/JQE.2024.3501195
Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo
{"title":"Fast Free-Running Circuits for 4H-SiC Avalanche Photodiodes","authors":"Wanwan Xing;Anqi Hu;Hong Song;Yi Zhou;Qiaoli Liu;Xingye Zhou;Xia Guo","doi":"10.1109/JQE.2024.3501195","DOIUrl":"https://doi.org/10.1109/JQE.2024.3501195","url":null,"abstract":"4H-SiC APDs show excellent characteristics in ultraviolet detection. Requirements have been put forward for quenching circuits in high-performance single photon detection applications. Here, a fast free-running circuit is proposed with passive quenching and active resetting for the 4H-SiC APD, which achieves a 23.8 ns dead time. The detection performance of the 4H-SiC APD under different dead times were studied. The photon detection efficiency and detectable distance increase with the decreasing dead time, remaining the highest at the shortest dead time. A dead time of 23.8 ns, detectable distance of 16.8 m and photon detection efficiency of 15.5% at 275 nm are achieved.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-4"},"PeriodicalIF":2.2,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers 基于InGaAs/ inasb ii型超晶格InGaAsSb势垒的高温中波长红外探测器
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-08 DOI: 10.1109/JQE.2024.3494696
Shuqing Deng;Zhen Liu;Yong Huang
{"title":"High-Temperature Mid-Wavelength Infrared Detectors Based on InGaAs/InAsSb Type-II Superlattices With InGaAsSb Barriers","authors":"Shuqing Deng;Zhen Liu;Yong Huang","doi":"10.1109/JQE.2024.3494696","DOIUrl":"https://doi.org/10.1109/JQE.2024.3494696","url":null,"abstract":"Mid-wavelength infrared detectors based on InGaAs/InAsSb superlattices were successfully grown on InAs substrates by metal-organic chemical vapor deposition (MOCVD). AlSb-free InGaAsSb quaternary alloy was employed as the electron barrier layer to reduce the dark current. By comparing the electrical and optical performances of three PNn devices with different Ga compositions in In\u0000<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>\u0000GaxAs\u0000<inline-formula> <tex-math>$_{mathrm {1-y}}$ </tex-math></inline-formula>\u0000Sby barriers, the optimal Ga composition was found to be 0.3. At 150 K, the dark current density of this device was \u0000<inline-formula> <tex-math>$1.2 times 10^{-4}$ </tex-math></inline-formula>\u0000 A/cm2 at -0.1 V. The device operates at zero bias with a 50% cutoff wavelength of \u0000<inline-formula> <tex-math>$sim 5.1~mu $ </tex-math></inline-formula>\u0000m, a peak blackbody responsivity of 1.6 A/W, and a peak specific detectivity of \u0000<inline-formula> <tex-math>$2.5times 10^{11}~mathrm {cmcdot }sqrt {mathrm {Hz}} mathrm {/W}$ </tex-math></inline-formula>\u0000.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-7"},"PeriodicalIF":2.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Polarization Beam Splitter Based on Rectangular Core Photonic Crystal Fiber Without Holes in the Cladding 基于包层无孔矩形芯光子晶体光纤的偏振分束器设计
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-11-06 DOI: 10.1109/JQE.2024.3492147
Weilong Wang;Taiki Matsuzaki;Shixiao Sun;Zejun Zhang;Akito Iguchi;Yasuhide Tsuji
{"title":"Design of Polarization Beam Splitter Based on Rectangular Core Photonic Crystal Fiber Without Holes in the Cladding","authors":"Weilong Wang;Taiki Matsuzaki;Shixiao Sun;Zejun Zhang;Akito Iguchi;Yasuhide Tsuji","doi":"10.1109/JQE.2024.3492147","DOIUrl":"https://doi.org/10.1109/JQE.2024.3492147","url":null,"abstract":"A new polarization beam splitter (PBS) based on rectangular core photonic crystal fibers (RC-PCFs) is proposed. Based on the full-vector finite element method, RC-PCFs without holes in the cladding are introduced to improve the design flexibility of multi-core PCF structure. An anisotropic lattice distribution using staggered arrangement of silicon nitride rods and air holes is employed in the core region to increase the birefringence. Optimization of the rectangular core structure is conducted to achieve single-polarization single-mode (SPSM) property. Afterwards, utilizing two SPSM PCFs, in the proposed PBS, two orthogonal polarization waves are only coupled to corresponding PCFs with a device length of \u0000<inline-formula> <tex-math>$185~mu $ </tex-math></inline-formula>\u0000m, and the crosstalk-free PBS is achieved.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions 声子修饰诱导非极性离子偶极矩排列
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-28 DOI: 10.1109/JQE.2024.3487502
Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang
{"title":"Phonon Dressing Induced Dipole Moment Alignment of Nonpolar Ions","authors":"Muhammad Imran;Iqbal Hussain;Muhammad Usman;Usman Javed;Huanrong Fan;Peng Li;Yibin Tian;Yanpeng Zhang","doi":"10.1109/JQE.2024.3487502","DOIUrl":"https://doi.org/10.1109/JQE.2024.3487502","url":null,"abstract":"We report phonon dressing-induced dipole moment alignment of nonpolar ions. Out-of-phase Fluorescence (FL) and in-phase Spontaneous Four-wave Mixing (SFWM) peak alignment are exhibited owing to dressing-assisted fine structure and hyperfine structure crystal field quantization, whereas FL and SFWM dip alignment result from fine structure crystal field and dressing quantization. Moreover, a constant alignment is maintained by adjusting two-dimensional parameters at certain conditions due to level angular momentum quantization. Such investigation can potentially apply to fine/hyperfine structure alignment of nonpolar ions and spectra homogenizers.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 1","pages":"1-6"},"PeriodicalIF":2.2,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142858902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain Tuning a Nonplanar Ring Oscillator by 3.5 GHz: Theory and Experiment
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-24 DOI: 10.1109/JQE.2024.3486164
Thomas J. Kane;Kenji Numata;Anthony Yu
{"title":"Strain Tuning a Nonplanar Ring Oscillator by 3.5 GHz: Theory and Experiment","authors":"Thomas J. Kane;Kenji Numata;Anthony Yu","doi":"10.1109/JQE.2024.3486164","DOIUrl":"https://doi.org/10.1109/JQE.2024.3486164","url":null,"abstract":"We tuned the oscillating frequency of a nonplanar ring oscillator by 3.5 GHz by applying strain to the monolithic resonator using a piezoelectric element. The voltage applied to the piezoelectric element was 192 volts, corresponding to a tuning coefficient of 18.2 MHz/volt. Useful bandwidth was limited by a resonance at 323 kHz and an anti-resonance at 420 kHz. Performance improvement relative to previous work was achieved primarily by using a resonator design with a small distance between the piezoelectric element and the resonant laser beam, but also by using a piezoelectric material with favorable properties and reducing the thickness of the resonator. A theoretical analysis of strain tuning supported the design.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"61 2","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10734233","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Nanoplasmonic Directional Coupler Utilizing a Backed Conductor on Dielectric Substrate With Finite Width 利用有限宽度介质基底上的背衬导体的纳米光导定向耦合器
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-10-23 DOI: 10.1109/JQE.2024.3485503
Kola Thirupathaiah;Montasir Qasymeh
{"title":"A Nanoplasmonic Directional Coupler Utilizing a Backed Conductor on Dielectric Substrate With Finite Width","authors":"Kola Thirupathaiah;Montasir Qasymeh","doi":"10.1109/JQE.2024.3485503","DOIUrl":"https://doi.org/10.1109/JQE.2024.3485503","url":null,"abstract":"A new nanoplasmonic directional coupler (DC) is proposed, utilizing a conductor-backed coplanar waveguide (CPW) with a finite width. Our design approach includes first establishing a theoretical transmission-line model for the coupler, and then utilizing the characteristic parameters of related coupled CPW structures for a comprehensive analysis. The provided analysis is conducted through full-wave analysis using a conformal mapping technique (CMT), implemented in CST Microwave Studio Suite CAD simulation software. This article primarily focuses on designing and analyzing the directional coupler using a backed conductor on the dielectric substrate with finite width, applying the transmission line (TL) theory method to achieve a coupling coefficient (\u0000<inline-formula> <tex-math>$C_{C}$ </tex-math></inline-formula>\u0000) of 3-dB. The proposed plasmonic coupler operates efficiently at optical frequencies in both the O- and L-bands. Simulations demonstrate that the coupling coefficient of the directional coupler is effectively modulated by varying the width of the backed conductor (\u0000<inline-formula> <tex-math>$w_{c}$ </tex-math></inline-formula>\u0000). Consequently, the proposed design surpasses the performance of traditional narrow-bandwidth couplers, offering significant benefits for applications in subwavelength wireless networks and high-density nanoscale photonic integrated circuits (PICs).","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 6","pages":"1-9"},"PeriodicalIF":2.2,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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