IEEE Journal of Quantum Electronics最新文献

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Non-Central Phase Matching Second Harmonic Generation by Using High Power Femtosecond Ytterbium-Doped Fiber Laser 利用高功率飞秒掺镱光纤激光器产生非中心相位匹配二次谐波
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-06-11 DOI: 10.1109/JQE.2024.3412091
Yu Liu;Shuanggen Zhang;Yangbo Bai;Wei Yan;Bochi Guo;Hui Zhou
{"title":"Non-Central Phase Matching Second Harmonic Generation by Using High Power Femtosecond Ytterbium-Doped Fiber Laser","authors":"Yu Liu;Shuanggen Zhang;Yangbo Bai;Wei Yan;Bochi Guo;Hui Zhou","doi":"10.1109/JQE.2024.3412091","DOIUrl":"https://doi.org/10.1109/JQE.2024.3412091","url":null,"abstract":"Femtosecond laser has unique advantages in frequency conversion owing to broadband spectrum and ultra-high peak power. Here, the authors demonstrate the non-central phase matching second harmonic (SH) process by utilizing femtosecond ytterbium-doped fiber (YDF) laser. Numerical solution of the coupled wave equations for the process of femtosecond pulses SH indicates that the non-central phase matching is determined by the spectral broadening and frequency shift. Pumped by Watt-level 1040 nm femtosecond pluses, the period quasi-phase matching at the 1064 nm wavelength, the fundamental frequency (FF) spectrum broadened up to 34.7 nm width and red shifted about 6 nm, and the non-central phase matching SH with PPKTP crystal waveguide generates at around 523 nm. The experimental measurements confirm the theoretical predictions, and offer a deeper understanding of nonlinear optical effects. The non-central phase matching enables flexible frequency conversion with potential applications in ultrafast optics.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141560996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Minimizing Noise in Distributed Reflector Laser Types Under Optical Injection Locking 最大限度降低光注入锁定下分布式反射激光器类型的噪声
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-06-11 DOI: 10.1109/JQE.2024.3412088
Arbnor Berisha;Hendrik Boerma;Ronald Kaiser;Patrick Runge;Martin Schell
{"title":"Minimizing Noise in Distributed Reflector Laser Types Under Optical Injection Locking","authors":"Arbnor Berisha;Hendrik Boerma;Ronald Kaiser;Patrick Runge;Martin Schell","doi":"10.1109/JQE.2024.3412088","DOIUrl":"https://doi.org/10.1109/JQE.2024.3412088","url":null,"abstract":"Complex coupled distributed feedback (DFB) lasers and sampled grating distributed Bragg reflector (SGDBR) lasers under optical injection locking are investigated to determine lowest noise operation. A noise reduction (frequency and intensity combined) of up to 15 dB was measured utilizing detuned optical injection locking at the relaxation oscillation frequency. Furthermore, 4 dB improvement in frequency noise at 10 kHz offset for higher coupling coefficient DFBs under injection locking was measured. The DFB lasers show more sensitivity to injection locking and have a lower need of injection power while exhibiting better signal to noise ratio compared to an SGDBR.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10552750","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141448036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Helical Long-Period Fiber Grating-Based Band- Selectable and Bandwidth-Enhanced Flat-Top Filter and Its Application to Wideband OAM Mode Converter 基于螺旋长周期光纤光栅的带可选和带宽增强型平顶滤波器及其在宽带 OAM 模式转换器中的应用
IF 2.2 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-06-05 DOI: 10.1109/JQE.2024.3410234
Zhang Meng;Naruya Mochizuki;Shiryu Oiwa;Hua Zhao;Peng Wang;Hongpu Li
{"title":"Helical Long-Period Fiber Grating-Based Band- Selectable and Bandwidth-Enhanced Flat-Top Filter and Its Application to Wideband OAM Mode Converter","authors":"Zhang Meng;Naruya Mochizuki;Shiryu Oiwa;Hua Zhao;Peng Wang;Hongpu Li","doi":"10.1109/JQE.2024.3410234","DOIUrl":"https://doi.org/10.1109/JQE.2024.3410234","url":null,"abstract":"A band-selectable and bandwidth-enhanced flat-top rejection filter is proposed and demonstrated both theoretically and experimentally, which is realized by using single-mode fiber (SMF)-based helical long-period fiber gratings (HLPGs) precisely operated at dispersion turning points (DTPs) of the same azimuthal order cladding mode but with different radial indices. As an important application of such HLPGs, the orbital angular momentum (OAM) mode converters enabling to have either a flat-top bandwidth of ~116 nm@-16 dB but centered at wavelength of ~1530 nm, or a flat-top bandwidth ~130 nm @-16 dB but centered at wavelength of ~1650 nm, have been successfully demonstrated. This is the first report for the experimental demonstration of such high-performance band-rejection filters with bands fully matching the C-L bands of the fiber communication. The proposed HLPGs may find potential applications to OAM mode converters, OAM tweezers, and OAM sensors.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141448008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration of inherently low differential phase noise across C-band in InP integrated, amplifying optical phased arrays 在 InP 集成放大光学相控阵中演示 C 波段固有的低差分相位噪声
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-05-22 DOI: 10.1109/jqe.2024.3404009
B.S. Vikram, M. Gagino, A. Millan-Mejia, L. Augustin, K.A. Williams, V. Dolores Calzadilla
{"title":"Demonstration of inherently low differential phase noise across C-band in InP integrated, amplifying optical phased arrays","authors":"B.S. Vikram, M. Gagino, A. Millan-Mejia, L. Augustin, K.A. Williams, V. Dolores Calzadilla","doi":"10.1109/jqe.2024.3404009","DOIUrl":"https://doi.org/10.1109/jqe.2024.3404009","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141149328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Design and Characterization in Amplitude and Phase of a Compact 8-channel Loop-back AWG based Integrated Comb processor 基于集成梳状处理器的紧凑型 8 通道回环 AWG 的设计与振幅和相位特性分析
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-05-06 DOI: 10.1109/jqe.2024.3397644
L. Roel van der Zon, Luis A. Bru, Pascual Muñoz, Daniel Pastor
{"title":"The Design and Characterization in Amplitude and Phase of a Compact 8-channel Loop-back AWG based Integrated Comb processor","authors":"L. Roel van der Zon, Luis A. Bru, Pascual Muñoz, Daniel Pastor","doi":"10.1109/jqe.2024.3397644","DOIUrl":"https://doi.org/10.1109/jqe.2024.3397644","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140889282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inverse Design of Quasi-Bound States in the Continuum Absorber 连续吸收器中准束缚态的逆设计
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-29 DOI: 10.1109/JQE.2024.3395127
Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang
{"title":"Inverse Design of Quasi-Bound States in the Continuum Absorber","authors":"Yun Chen;Jiahe Yu;Wentao Zhang;Wei Huang","doi":"10.1109/JQE.2024.3395127","DOIUrl":"https://doi.org/10.1109/JQE.2024.3395127","url":null,"abstract":"In this study, we demonstrate the relationship between the absorbing frequency and the quasi-bound states in the continuum (quasi-BIC) frequency by employing the coupled-mode theory (CMT) and interference theory. The structure consists of a symmetric-protected BIC metal structure layer, a polyimide spacer layer, and a silicon substrate. The top layer contains two similar metal structures, which make the structure asymmetric by varying one of them slightly, thus producing a symmetrical broken quasi-BIC. When a metal reflecting plate is added to the bottom of the dielectric spacer layer, a quasi-BIC absorber is formed. This is the first theoretical calculation using the coupled mode equation to analyze the relationship between the absorption frequency of a quasi-BIC absorber and the quasi-BIC resonance frequency, which is related to the resonance frequency of a single structure in a unit cell. According to the relationship between the coupling strength and distance between the structures within a unit cell combined with the resonant frequency of quasi-BIC, the geometric parameters of the absorber within a frequency range can be inverse design.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140820418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method 基于 k 域分析方法的氮化镓发光二极管二维和三维空间光学模拟比较
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-15 DOI: 10.1109/JQE.2024.3389043
Tianwen Xia;Le Wang;Enguo Chen;Zhonghang Huang;Chunli Yan;Dalei Wu;Q. Frank Yan;Jie Sun
{"title":"Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method","authors":"Tianwen Xia;Le Wang;Enguo Chen;Zhonghang Huang;Chunli Yan;Dalei Wu;Q. Frank Yan;Jie Sun","doi":"10.1109/JQE.2024.3389043","DOIUrl":"10.1109/JQE.2024.3389043","url":null,"abstract":"Earlier researchers have designed nanostructures such as stripe gratings (SG) or photonic crystals array (PhCA) to improve the light extraction efficiency (LEE) of light-emitting diodes (LEDs) by the diffraction mechanism. However, through k-domain method and simulation analysis, this letter finds that although SG perform well in 2D simulation, their effect drops sharply in 3D space, a phenomenon being overlooked in the community. This letter explains the diffraction mechanism of LEDs with nanostructure in 2D and 3D space through K-domain analysis, and reveals the inaccuracy of simulating LED with SG in 2D space. Unlike SG, PhCA offers diffraction in two directions and may be more suitable for LEDs.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140577945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parallel Sensing With Multiple Microrings on a Single Bus Waveguide 在单总线波导上使用多个微镜进行并行传感
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-08 DOI: 10.1109/JQE.2024.3386101
Zheng Zheng;Ward A. P. M. Hendriks;S. M. García-Blanco;Lantian Chang
{"title":"Parallel Sensing With Multiple Microrings on a Single Bus Waveguide","authors":"Zheng Zheng;Ward A. P. M. Hendriks;S. M. García-Blanco;Lantian Chang","doi":"10.1109/JQE.2024.3386101","DOIUrl":"10.1109/JQE.2024.3386101","url":null,"abstract":"We present a multiple microrings channel integrated chip and develop a signal processing method that enables parallel sensing with this chip. We utilize fast Fourier transform (FFT) and inverse fast Fourier transform (IFFT) to extract signals from different rings with different free spectra ranges (FSR). We verify this algorithm with temperature and solution sensing experiments. Compared with the conventional single-ring-single-resonance method, it shows improvements in up to 8 multi-channels capability and higher time resolution with the same experimental hardware.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140577920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors 利用 PIN InGaAs 光电探测器中 1/f 噪声-暗电流之间的相关性
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-04-02 DOI: 10.1109/JQE.2024.3384240
Chuang Li;Hezhuang Liu;Jingyi Wang;Daqian Guo;Baile Chen;Jiang Wu
{"title":"Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors","authors":"Chuang Li;Hezhuang Liu;Jingyi Wang;Daqian Guo;Baile Chen;Jiang Wu","doi":"10.1109/JQE.2024.3384240","DOIUrl":"10.1109/JQE.2024.3384240","url":null,"abstract":"High performance InGaAs photodetectors are highly desired for the ever-growing photoelectric industry. Despite maturity at the production level, the underlying causes of noise and dark current need clarification for further improvement. We studied the dark current and noise characteristics in PIN In0.53Ga0.47As photodiodes with different mesa sizes. The dark current noise exhibits a clear spectral 1/\u0000<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\u0000 shape in all conditions. The results at low temperatures suggest that the dark current is dominated by the sidewall shunt paths while generation-recombination dark current comes into play at high temperatures. The noise intensity follows the squared leakage current in the temperature range of 100-240 K. Since the extracted activation energy of 1/\u0000<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\u0000 noise approximates that of the surface leakage current, suggesting that the surface leakage current may be the primary factor of the 1/\u0000<inline-formula> <tex-math>$f$ </tex-math></inline-formula>\u0000 noise.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140577794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Quantum Electronics information for authors IEEE 期刊《量子电子学》为作者提供的信息
IF 2.5 3区 工程技术
IEEE Journal of Quantum Electronics Pub Date : 2024-03-29 DOI: 10.1109/JQE.2024.3399866
{"title":"IEEE Journal of Quantum Electronics information for authors","authors":"","doi":"10.1109/JQE.2024.3399866","DOIUrl":"https://doi.org/10.1109/JQE.2024.3399866","url":null,"abstract":"","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.5,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10541325","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141182051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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